HK1109242A1 - Iiia group nitride semiconductor with low-impedance ohmic contact - Google Patents

Iiia group nitride semiconductor with low-impedance ohmic contact

Info

Publication number
HK1109242A1
HK1109242A1 HK08103284.1A HK08103284A HK1109242A1 HK 1109242 A1 HK1109242 A1 HK 1109242A1 HK 08103284 A HK08103284 A HK 08103284A HK 1109242 A1 HK1109242 A1 HK 1109242A1
Authority
HK
Hong Kong
Prior art keywords
low
nitride semiconductor
ohmic contact
group nitride
iiia group
Prior art date
Application number
HK08103284.1A
Other languages
English (en)
Inventor
Yun-Li Li
Heng Liu
Original Assignee
Bridgelux Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bridgelux Inc filed Critical Bridgelux Inc
Publication of HK1109242A1 publication Critical patent/HK1109242A1/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
HK08103284.1A 2004-09-09 2008-03-25 Iiia group nitride semiconductor with low-impedance ohmic contact HK1109242A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/936,496 US7943949B2 (en) 2004-09-09 2004-09-09 III-nitride based on semiconductor device with low-resistance ohmic contacts
PCT/CN2005/001449 WO2006026932A1 (fr) 2004-09-09 2005-09-09 Semi-conducteur au nitrure du groupe iiia dote d'un contact ohmique de faible impedance

Publications (1)

Publication Number Publication Date
HK1109242A1 true HK1109242A1 (en) 2008-05-30

Family

ID=35995307

Family Applications (1)

Application Number Title Priority Date Filing Date
HK08103284.1A HK1109242A1 (en) 2004-09-09 2008-03-25 Iiia group nitride semiconductor with low-impedance ohmic contact

Country Status (6)

Country Link
US (1) US7943949B2 (xx)
KR (1) KR100879414B1 (xx)
CN (1) CN100563033C (xx)
HK (1) HK1109242A1 (xx)
TW (2) TWM274645U (xx)
WO (1) WO2006026932A1 (xx)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080283854A1 (en) * 2007-05-01 2008-11-20 The Regents Of The University Of California Light emitting diode device layer structure using an indium gallium nitride contact layer
TWI341600B (en) * 2007-08-31 2011-05-01 Huga Optotech Inc Light optoelectronic device and forming method thereof
US7791101B2 (en) * 2008-03-28 2010-09-07 Cree, Inc. Indium gallium nitride-based ohmic contact layers for gallium nitride-based devices
KR100954729B1 (ko) 2008-06-12 2010-04-23 주식회사 세미콘라이트 ＩｎＮ 양자섬 캡핑층을 구비한 질화물계 발광소자
DE102008052405A1 (de) * 2008-10-21 2010-04-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
KR100992772B1 (ko) * 2008-11-20 2010-11-05 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
US9029866B2 (en) 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
US9064947B2 (en) 2009-08-04 2015-06-23 Gan Systems Inc. Island matrixed gallium nitride microwave and power switching transistors
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
US9437785B2 (en) * 2009-08-10 2016-09-06 Cree, Inc. Light emitting diodes including integrated backside reflector and die attach
DE102009060747A1 (de) 2009-12-30 2011-07-07 OSRAM Opto Semiconductors GmbH, 93055 Halbleiterchip
EP2559064A4 (en) 2010-04-13 2018-07-18 GaN Systems Inc. High density gallium nitride devices using island topology
KR101646664B1 (ko) * 2010-05-18 2016-08-08 엘지이노텍 주식회사 발광 소자, 발광 소자의 제조방법 및 발광 소자 패키지
US8242523B2 (en) * 2010-07-29 2012-08-14 National Tsing Hua University III-Nitride light-emitting diode and method of producing the same
CN102780156B (zh) * 2011-05-13 2014-05-07 中国科学院物理研究所 一种氮化铝固体激光器及其制备方法
CN102956781B (zh) * 2011-08-31 2015-03-11 新世纪光电股份有限公司 发光元件及其制作方法
KR102130488B1 (ko) 2012-02-23 2020-07-07 센서 일렉트로닉 테크놀로지, 인크 반도체에 대한 오믹 접촉부
TWI505500B (zh) * 2012-06-07 2015-10-21 Lextar Electronics Corp 發光二極體及其製造方法
KR20140086624A (ko) * 2012-12-28 2014-07-08 삼성전자주식회사 질화물 반도체 발광 소자
US20150255589A1 (en) * 2014-03-10 2015-09-10 Toshiba Corporation Indium-containing contact and barrier layer for iii-nitride high electron mobility transistor devices
KR102373677B1 (ko) * 2015-08-24 2022-03-14 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
WO2019111161A1 (en) * 2017-12-05 2019-06-13 King Abdullah University Of Science And Technology Forming iii-nitride alloys
KR102544296B1 (ko) * 2018-09-13 2023-06-16 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 표면발광레이저 소자 및 이를 구비한 표면발광레이저 장치
CN112951955B (zh) * 2021-01-26 2023-03-14 华灿光电（浙江）有限公司 紫外发光二极管外延片及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213781A (en) * 1978-11-20 1980-07-22 Westinghouse Electric Corp. Deposition of solid semiconductor compositions and novel semiconductor materials
JP2657743B2 (ja) * 1992-10-29 1997-09-24 豊田合成株式会社 窒素−３族元素化合物半導体発光素子
WO1996011502A1 (en) * 1994-10-11 1996-04-18 International Business Machines Corporation WAVELENGTH TUNING OF GaN-BASED LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS AND DISPLAYS BY INTRODUCTION OF DEEP DONORS
JP3325479B2 (ja) * 1997-01-30 2002-09-17 株式会社東芝 化合物半導体素子及びその製造方法
US6369403B1 (en) * 1999-05-27 2002-04-09 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods with tunnel contact hole sources and non-continuous barrier layer
TW564584B (en) * 2001-06-25 2003-12-01 Toshiba Corp Semiconductor light emitting device
US6949395B2 (en) * 2001-10-22 2005-09-27 Oriol, Inc. Method of making diode having reflective layer
US6847057B1 (en) * 2003-08-01 2005-01-25 Lumileds Lighting U.S., Llc Semiconductor light emitting devices
US20050236636A1 (en) * 2004-04-23 2005-10-27 Supernova Optoelectronics Corp. GaN-based light-emitting diode structure
TWI239668B (en) * 2004-10-21 2005-09-11 Formosa Epitaxy Inc Structure of gallium-nitride based (GaN-based) light-emitting diode with high luminance

Also Published As

Publication number Publication date
KR20070058499A (ko) 2007-06-08
WO2006026932A1 (fr) 2006-03-16
TW200610187A (en) 2006-03-16
KR100879414B1 (ko) 2009-01-19
CN100563033C (zh) 2009-11-25
US20060049417A1 (en) 2006-03-09
TWM274645U (en) 2005-09-01
CN101044629A (zh) 2007-09-26
US7943949B2 (en) 2011-05-17
TWI240442B (en) 2005-09-21

Similar Documents

Publication Publication Date Title
HK1109242A1 (en) Iiia group nitride semiconductor with low-impedance ohmic contact
TWI372470B (en) Schottky device
TWI371867B (en) Semiconductor light-emitting device
EP1708284A4 (en) SEMICONDUCTOR ELECTROLUMINESCENT DEVICE
EP1854155A4 (en) LIGHT-EMITTING SEMICONDUCTOR ELEMENT
EP1829102A4 (en) SEMICONDUCTOR DEVICE
EP1760790A4 (en) SEMICONDUCTOR COMPONENT
EP1710831A4 (en) SEMICONDUCTOR DEVICE
EP1755165A4 (en) SEMICONDUCTOR DEVICE
EP1876649A4 (en) GROUP III NITRIDE SEMICONDUCTOR DEVICE AND EPITAXIAL SUBSTRATE
EP1970963A4 (en) SEMICONDUCTOR DEVICE OF TRENCH STRUCTURE
EP1768152A4 (en) CONTACT DEVICE
EP1927138A4 (en) SEMICONDUCTOR DEVICE
TWI350964B (en) Semiconductor device
TWI373098B (en) Semiconductor device
EP1801871A4 (en) SEMICONDUCTOR COMPONENT
SG126899A1 (en) Light-emitting device, method for making the same,and nitride semiconductor substrate
EP1902466A4 (en) SCHOTTKY DIODE WITH IMPROVED TOP CAPABILITY
EP1935037A4 (en) GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
EP1709573A4 (en) SEMICONDUCTOR APPARATUS
EP1938376A4 (en) SEMICONDUCTOR DEVICE
EP1886377A4 (en) SEMICONDUCTOR COMPONENT
ITTO20050615A1 (it) Dispositivo di ritenuta per motociclisti.
EP1914213A4 (en) SILICON NITRIDE SUBSTRATE, SILICON NITRIDE CIRCUIT SUBSTRATE USING THE SAME AND USE THEREOF
EP1806770A4 (en) GALLIUMNITRIDWAFER

Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20160909