CN101023028A - 超硬cvd单晶金刚石及其三维生长 - Google Patents

超硬cvd单晶金刚石及其三维生长 Download PDF

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Publication number
CN101023028A
CN101023028A CNA2005800305329A CN200580030532A CN101023028A CN 101023028 A CN101023028 A CN 101023028A CN A2005800305329 A CNA2005800305329 A CN A2005800305329A CN 200580030532 A CN200580030532 A CN 200580030532A CN 101023028 A CN101023028 A CN 101023028A
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CN
China
Prior art keywords
single crystal
diamond
crystal diamond
cvd
produced
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Pending
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CNA2005800305329A
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English (en)
Chinese (zh)
Inventor
R·J·赫姆利
H-K·毛
C-S·严
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Carnegie Institution of Washington
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Carnegie Institution of Washington
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Publication of CN101023028A publication Critical patent/CN101023028A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/279—Diamond only control of diamond crystallography
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
    • C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Combustion & Propulsion (AREA)
  • Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
CNA2005800305329A 2004-09-10 2005-09-09 超硬cvd单晶金刚石及其三维生长 Pending CN101023028A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US60851604P 2004-09-10 2004-09-10
US60/608,516 2004-09-10

Publications (1)

Publication Number Publication Date
CN101023028A true CN101023028A (zh) 2007-08-22

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ID=37727751

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CNA2005800305329A Pending CN101023028A (zh) 2004-09-10 2005-09-09 超硬cvd单晶金刚石及其三维生长

Country Status (13)

Country Link
US (1) US7594968B2 (https=)
EP (1) EP1807346A4 (https=)
JP (1) JP4972554B2 (https=)
KR (1) KR101277232B1 (https=)
CN (1) CN101023028A (https=)
AU (1) AU2005335208B2 (https=)
BR (1) BRPI0515347A (https=)
CA (1) CA2589299C (https=)
IL (1) IL181789A0 (https=)
RU (1) RU2389833C2 (https=)
TW (1) TWI411710B (https=)
WO (1) WO2007018555A2 (https=)
ZA (1) ZA200702010B (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102084492B (zh) * 2008-05-05 2013-09-11 华盛顿卡耐基研究所 超韧单晶掺硼金刚石
CN104988578A (zh) * 2015-07-24 2015-10-21 哈尔滨工业大学 一种利用等离子体挡板优化单晶金刚石同质外延生长的方法
CN106884202A (zh) * 2012-06-29 2017-06-23 住友电气工业株式会社 金刚石单晶和单晶金刚石工具
CN113005517A (zh) * 2021-02-25 2021-06-22 廊坊西波尔钻石技术有限公司 一种减小单晶金刚石内应力的处理方法
CN113026001A (zh) * 2021-05-26 2021-06-25 苏州香榭轩表面工程技术咨询有限公司 一种介稳态控制制备金刚石的方法

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RU2328563C2 (ru) 2002-09-06 2008-07-10 Элемент Сикс Лимитед Цветные алмазы
TWI410538B (zh) * 2005-11-15 2013-10-01 Carnegie Inst Of Washington 建基於以快速生長速率製造之單晶ｃｖｄ鑽石的新穎鑽石的用途／應用
DE102008047591B4 (de) 2007-09-18 2019-08-14 Samsung Electronics Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung mit reduzierter Dicke
JP2010540399A (ja) * 2007-10-02 2010-12-24 カーネギー インスチチューション オブ ワシントン ダイヤモンドを低圧でアニールする方法
US20100055022A1 (en) * 2008-05-09 2010-03-04 Apollo Diamond Gemstone Corporation Diamond identifier
WO2010048607A2 (en) * 2008-10-24 2010-04-29 Carnegie Institution Of Washington Enhanced optical properties of chemical vapor deposited single crystal diamond by low-pressure/high-temperature annealing
WO2010068419A2 (en) * 2008-11-25 2010-06-17 Carnegie Institution Of Washington Production of single crystal cvd diamond rapid growth rate
GB2476478A (en) * 2009-12-22 2011-06-29 Element Six Ltd Chemical vapour deposition diamond synthesis
US20110226016A1 (en) * 2010-03-16 2011-09-22 Terrence Dashon Howard Diamond earring with washer
JP2013532109A (ja) 2010-05-17 2013-08-15 カーネギー インスチチューション オブ ワシントン 大形、高純度、単結晶のｃｖｄダイヤモンドの生成
US8884251B2 (en) 2010-06-03 2014-11-11 Element Six Limited Diamond tools
WO2014081654A1 (en) * 2012-11-21 2014-05-30 National Oilwell DHT, L.P. Fixed cutter drill bit cutter elements including hard cutting tables made from cvd synthetic diamonds
KR102626684B1 (ko) * 2015-07-22 2024-01-17 스미토모덴키고교가부시키가이샤 단결정 다이아몬드재, 단결정 다이아몬드칩 및 천공 공구
US9966161B2 (en) * 2015-09-21 2018-05-08 Uchicago Argonne, Llc Mechanical design of thin-film diamond crystal mounting apparatus with optimized thermal contact and crystal strain for coherence preservation x-ray optics
EP3373052A1 (de) * 2017-03-06 2018-09-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbzeug, verfahren zu dessen herstellung und damit hergestellte komponente
CN110387533B (zh) * 2019-07-24 2021-04-06 珠海中纳金刚石有限公司 一种热丝cvd纳米金刚石涂层的自动控制方法
US11753740B2 (en) * 2019-11-18 2023-09-12 Shin-Etsu Chemical Co., Ltd. Diamond substrate and method for manufacturing the same
KR102775490B1 (ko) 2022-01-11 2025-03-04 서울시립대학교 산학협력단 인공지능 기반의 다이아몬드 제조 방법 및 다이아몬드 제조 장비
CN114941173B (zh) * 2022-05-26 2023-10-10 曲阜师范大学 一种高相干金刚石氮空穴及金刚石压砧的制备与应用

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102084492B (zh) * 2008-05-05 2013-09-11 华盛顿卡耐基研究所 超韧单晶掺硼金刚石
CN106884202A (zh) * 2012-06-29 2017-06-23 住友电气工业株式会社 金刚石单晶和单晶金刚石工具
CN104988578A (zh) * 2015-07-24 2015-10-21 哈尔滨工业大学 一种利用等离子体挡板优化单晶金刚石同质外延生长的方法
CN113005517A (zh) * 2021-02-25 2021-06-22 廊坊西波尔钻石技术有限公司 一种减小单晶金刚石内应力的处理方法
CN113026001A (zh) * 2021-05-26 2021-06-25 苏州香榭轩表面工程技术咨询有限公司 一种介稳态控制制备金刚石的方法
CN113026001B (zh) * 2021-05-26 2021-08-17 苏州香榭轩表面工程技术咨询有限公司 一种介稳态控制制备金刚石的方法
CN113026001B8 (zh) * 2021-05-26 2021-09-14 上海征世科技股份有限公司 一种介稳态控制制备金刚石的方法

Also Published As

Publication number Publication date
ZA200702010B (en) 2010-06-30
WO2007018555A8 (en) 2007-08-23
TW200628642A (en) 2006-08-16
US7594968B2 (en) 2009-09-29
WO2007018555A2 (en) 2007-02-15
AU2005335208A1 (en) 2007-02-15
WO2007018555A3 (en) 2007-04-05
EP1807346A4 (en) 2010-04-28
JP4972554B2 (ja) 2012-07-11
RU2007113175A (ru) 2008-10-27
CA2589299A1 (en) 2007-02-15
WO2007018555B1 (en) 2007-05-24
CA2589299C (en) 2014-04-01
JP2008512342A (ja) 2008-04-24
BRPI0515347A (pt) 2008-07-22
KR20070094725A (ko) 2007-09-21
US20060065187A1 (en) 2006-03-30
IL181789A0 (en) 2007-07-04
KR101277232B1 (ko) 2013-06-26
AU2005335208B2 (en) 2010-06-24
RU2389833C2 (ru) 2010-05-20
TWI411710B (zh) 2013-10-11
EP1807346A2 (en) 2007-07-18

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