CN113026001A - 一种介稳态控制制备金刚石的方法 - Google Patents
一种介稳态控制制备金刚石的方法 Download PDFInfo
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- CN113026001A CN113026001A CN202110574749.7A CN202110574749A CN113026001A CN 113026001 A CN113026001 A CN 113026001A CN 202110574749 A CN202110574749 A CN 202110574749A CN 113026001 A CN113026001 A CN 113026001A
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- temperature
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- diamond
- thermal resistance
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- 239000010432 diamond Substances 0.000 title claims abstract description 112
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 110
- 238000000034 method Methods 0.000 title claims abstract description 66
- 238000000151 deposition Methods 0.000 claims abstract description 155
- 230000008021 deposition Effects 0.000 claims abstract description 153
- 238000005137 deposition process Methods 0.000 claims abstract description 27
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 21
- 238000002360 preparation method Methods 0.000 claims abstract description 21
- 230000008859 change Effects 0.000 claims abstract description 8
- 238000001514 detection method Methods 0.000 claims description 66
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 230000007246 mechanism Effects 0.000 claims description 12
- 239000006260 foam Substances 0.000 claims description 10
- 230000005284 excitation Effects 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 230000006835 compression Effects 0.000 claims description 8
- 238000007906 compression Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000004321 preservation Methods 0.000 claims description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims description 8
- 239000010935 stainless steel Substances 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 4
- 239000006262 metallic foam Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000007493 shaping process Methods 0.000 abstract description 2
- 239000013078 crystal Substances 0.000 description 13
- 238000001878 scanning electron micrograph Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- VQYPKWOGIPDGPN-UHFFFAOYSA-N [C].[Ta] Chemical compound [C].[Ta] VQYPKWOGIPDGPN-UHFFFAOYSA-N 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 235000011299 Brassica oleracea var botrytis Nutrition 0.000 description 1
- 240000003259 Brassica oleracea var. botrytis Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (15)
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CN202110574749.7A CN113026001B8 (zh) | 2021-05-26 | 2021-05-26 | 一种介稳态控制制备金刚石的方法 |
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CN202110574749.7A CN113026001B8 (zh) | 2021-05-26 | 2021-05-26 | 一种介稳态控制制备金刚石的方法 |
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CN113026001A true CN113026001A (zh) | 2021-06-25 |
CN113026001B CN113026001B (zh) | 2021-08-17 |
CN113026001B8 CN113026001B8 (zh) | 2021-09-14 |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1261927A (zh) * | 1997-07-07 | 2000-08-02 | Cvd金刚石公司 | 利用热灯丝直流等离子体进行金刚石成核和沉积的设备及方法 |
CN101023028A (zh) * | 2004-09-10 | 2007-08-22 | 华盛顿卡内基研究所 | 超硬cvd单晶金刚石及其三维生长 |
CN101413116A (zh) * | 2008-10-09 | 2009-04-22 | 成都理工大学 | 一种直流弧光放电pcvd金刚石薄膜制备的基底恒温技术 |
CN104185697A (zh) * | 2011-12-16 | 2014-12-03 | 六号元素技术有限公司 | 单晶cvd合成金刚石材料 |
CN208472187U (zh) * | 2018-06-25 | 2019-02-05 | 廊坊西波尔钻石技术有限公司 | 一种制备珠宝首饰用人造cvd金刚石的设备 |
CN110318030A (zh) * | 2018-03-29 | 2019-10-11 | 中国科学院宁波材料技术与工程研究所 | 一种自支撑超细纳米晶金刚石厚膜 |
CN209522918U (zh) * | 2018-12-05 | 2019-10-22 | 中国科学院金属研究所 | 一种多功能金刚石薄膜的热丝化学气相沉积装置 |
CN111945130A (zh) * | 2020-07-20 | 2020-11-17 | 河北上诚超硬材料有限公司 | 一种热丝cvd金刚石设备灯丝的排列方法 |
CN112684829A (zh) * | 2020-12-22 | 2021-04-20 | 同济大学 | 一种用于mpcvd装置的温度检测控制系统和方法 |
-
2021
- 2021-05-26 CN CN202110574749.7A patent/CN113026001B8/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1261927A (zh) * | 1997-07-07 | 2000-08-02 | Cvd金刚石公司 | 利用热灯丝直流等离子体进行金刚石成核和沉积的设备及方法 |
CN101023028A (zh) * | 2004-09-10 | 2007-08-22 | 华盛顿卡内基研究所 | 超硬cvd单晶金刚石及其三维生长 |
CN101413116A (zh) * | 2008-10-09 | 2009-04-22 | 成都理工大学 | 一种直流弧光放电pcvd金刚石薄膜制备的基底恒温技术 |
CN104185697A (zh) * | 2011-12-16 | 2014-12-03 | 六号元素技术有限公司 | 单晶cvd合成金刚石材料 |
CN110318030A (zh) * | 2018-03-29 | 2019-10-11 | 中国科学院宁波材料技术与工程研究所 | 一种自支撑超细纳米晶金刚石厚膜 |
CN208472187U (zh) * | 2018-06-25 | 2019-02-05 | 廊坊西波尔钻石技术有限公司 | 一种制备珠宝首饰用人造cvd金刚石的设备 |
CN209522918U (zh) * | 2018-12-05 | 2019-10-22 | 中国科学院金属研究所 | 一种多功能金刚石薄膜的热丝化学气相沉积装置 |
CN111945130A (zh) * | 2020-07-20 | 2020-11-17 | 河北上诚超硬材料有限公司 | 一种热丝cvd金刚石设备灯丝的排列方法 |
CN112684829A (zh) * | 2020-12-22 | 2021-04-20 | 同济大学 | 一种用于mpcvd装置的温度检测控制系统和方法 |
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CN113026001B8 (zh) | 2021-09-14 |
CN113026001B (zh) | 2021-08-17 |
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Effective date of registration: 20210811 Address after: 200000 west side of Building 2, No. 500, Huapu Road, Qingpu District, Shanghai Applicant after: Shanghai Zhengshi Technology Co.,Ltd. Address before: 215000 Room 408, 4th floor, building 1, 39 Yinfeng Road, Guoxiang street, Wuzhong District, Suzhou City, Jiangsu Province Applicant before: SUZHOU XIANGXIEXUAN SURFACE ENGINEERING TECHNOLOGY CONSULTATION Co.,Ltd. Applicant before: Shanghai Zhengshi Technology Co.,Ltd. |
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Correction item: Patentee|Address|Patentee Correct: Shanghai Zhengshi Technology Co.,Ltd.|200000 west side of Building 2, No. 500, Huapu Road, Qingpu District, Shanghai False: SUZHOU XIANGXIEXUAN SURFACE ENGINEERING TECHNOLOGY CONSULTATION Co.,Ltd.|215000 Room 408, 4th floor, building 1, 39 Yinfeng Road, Guoxiang street, Wuzhong District, Suzhou City, Jiangsu Province|Shanghai Zhengshi Technology Co.,Ltd. Number: 34-01 Page: The title page Volume: 37 Correction item: Patentee|Address|Patentee Correct: Shanghai Zhengshi Technology Co.,Ltd.|200000 west side of Building 2, No. 500, Huapu Road, Qingpu District, Shanghai False: SUZHOU XIANGXIEXUAN SURFACE ENGINEERING TECHNOLOGY CONSULTATION Co.,Ltd.|215000 Room 408, 4th floor, building 1, 39 Yinfeng Road, Guoxiang street, Wuzhong District, Suzhou City, Jiangsu Province|Shanghai Zhengshi Technology Co.,Ltd. Number: 34-01 Volume: 37 |