TWI411710B - 超韌化學蒸氣沉積（ｃｖｄ）之單一結晶鑽石及其三維生長方法 - Google Patents
超韌化學蒸氣沉積（ｃｖｄ）之單一結晶鑽石及其三維生長方法 Download PDFInfo
- Publication number
- TWI411710B TWI411710B TW094131127A TW94131127A TWI411710B TW I411710 B TWI411710 B TW I411710B TW 094131127 A TW094131127 A TW 094131127A TW 94131127 A TW94131127 A TW 94131127A TW I411710 B TWI411710 B TW I411710B
- Authority
- TW
- Taiwan
- Prior art keywords
- diamond
- single crystal
- crystal diamond
- cvd
- diamonds
- Prior art date
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 189
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 137
- 239000013078 crystal Substances 0.000 title claims abstract description 77
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 65
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 26
- 229910052757 nitrogen Inorganic materials 0.000 claims description 17
- 238000000137 annealing Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000010437 gem Substances 0.000 claims description 3
- 230000008018 melting Effects 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 3
- 229910001751 gemstone Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 28
- 238000000034 method Methods 0.000 abstract description 24
- 230000008569 process Effects 0.000 abstract description 7
- 238000007373 indentation Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000008901 benefit Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 241001590997 Moolgarda engeli Species 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000001237 Raman spectrum Methods 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000013080 microcrystalline material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/274—Diamond only using microwave discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/279—Diamond only control of diamond crystallography
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
- C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Combustion & Propulsion (AREA)
- Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60851604P | 2004-09-10 | 2004-09-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200628642A TW200628642A (en) | 2006-08-16 |
| TWI411710B true TWI411710B (zh) | 2013-10-11 |
Family
ID=37727751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094131127A TWI411710B (zh) | 2004-09-10 | 2005-09-09 | 超韌化學蒸氣沉積（ｃｖｄ）之單一結晶鑽石及其三維生長方法 |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US7594968B2 (https=) |
| EP (1) | EP1807346A4 (https=) |
| JP (1) | JP4972554B2 (https=) |
| KR (1) | KR101277232B1 (https=) |
| CN (1) | CN101023028A (https=) |
| AU (1) | AU2005335208B2 (https=) |
| BR (1) | BRPI0515347A (https=) |
| CA (1) | CA2589299C (https=) |
| IL (1) | IL181789A0 (https=) |
| RU (1) | RU2389833C2 (https=) |
| TW (1) | TWI411710B (https=) |
| WO (1) | WO2007018555A2 (https=) |
| ZA (1) | ZA200702010B (https=) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2328563C2 (ru) | 2002-09-06 | 2008-07-10 | Элемент Сикс Лимитед | Цветные алмазы |
| TWI410538B (zh) * | 2005-11-15 | 2013-10-01 | Carnegie Inst Of Washington | 建基於以快速生長速率製造之單晶ｃｖｄ鑽石的新穎鑽石的用途／應用 |
| DE102008047591B4 (de) | 2007-09-18 | 2019-08-14 | Samsung Electronics Co., Ltd. | Verfahren zum Herstellen einer Halbleitervorrichtung mit reduzierter Dicke |
| JP2010540399A (ja) * | 2007-10-02 | 2010-12-24 | カーネギー インスチチューション オブ ワシントン | ダイヤモンドを低圧でアニールする方法 |
| TWI457475B (zh) * | 2008-05-05 | 2014-10-21 | Carnegie Inst Of Washington | 超韌性單晶型摻硼鑽石 |
| US20100055022A1 (en) * | 2008-05-09 | 2010-03-04 | Apollo Diamond Gemstone Corporation | Diamond identifier |
| WO2010048607A2 (en) * | 2008-10-24 | 2010-04-29 | Carnegie Institution Of Washington | Enhanced optical properties of chemical vapor deposited single crystal diamond by low-pressure/high-temperature annealing |
| WO2010068419A2 (en) * | 2008-11-25 | 2010-06-17 | Carnegie Institution Of Washington | Production of single crystal cvd diamond rapid growth rate |
| GB2476478A (en) * | 2009-12-22 | 2011-06-29 | Element Six Ltd | Chemical vapour deposition diamond synthesis |
| US20110226016A1 (en) * | 2010-03-16 | 2011-09-22 | Terrence Dashon Howard | Diamond earring with washer |
| JP2013532109A (ja) | 2010-05-17 | 2013-08-15 | カーネギー インスチチューション オブ ワシントン | 大形、高純度、単結晶のｃｖｄダイヤモンドの生成 |
| US8884251B2 (en) | 2010-06-03 | 2014-11-11 | Element Six Limited | Diamond tools |
| US9441312B2 (en) * | 2012-06-29 | 2016-09-13 | Sumitomo Electric Industries, Ltd. | Diamond single crystal, method for producing the same, and single crystal diamond tool |
| WO2014081654A1 (en) * | 2012-11-21 | 2014-05-30 | National Oilwell DHT, L.P. | Fixed cutter drill bit cutter elements including hard cutting tables made from cvd synthetic diamonds |
| KR102626684B1 (ko) * | 2015-07-22 | 2024-01-17 | 스미토모덴키고교가부시키가이샤 | 단결정 다이아몬드재, 단결정 다이아몬드칩 및 천공 공구 |
| CN104988578B (zh) * | 2015-07-24 | 2017-08-25 | 哈尔滨工业大学 | 一种利用等离子体挡板优化单晶金刚石同质外延生长的方法 |
| US9966161B2 (en) * | 2015-09-21 | 2018-05-08 | Uchicago Argonne, Llc | Mechanical design of thin-film diamond crystal mounting apparatus with optimized thermal contact and crystal strain for coherence preservation x-ray optics |
| EP3373052A1 (de) * | 2017-03-06 | 2018-09-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbzeug, verfahren zu dessen herstellung und damit hergestellte komponente |
| CN110387533B (zh) * | 2019-07-24 | 2021-04-06 | 珠海中纳金刚石有限公司 | 一种热丝cvd纳米金刚石涂层的自动控制方法 |
| US11753740B2 (en) * | 2019-11-18 | 2023-09-12 | Shin-Etsu Chemical Co., Ltd. | Diamond substrate and method for manufacturing the same |
| CN113005517B (zh) * | 2021-02-25 | 2022-07-12 | 廊坊西波尔钻石技术有限公司 | 一种减小单晶金刚石内应力的处理方法 |
| CN113026001B8 (zh) * | 2021-05-26 | 2021-09-14 | 上海征世科技股份有限公司 | 一种介稳态控制制备金刚石的方法 |
| KR102775490B1 (ko) | 2022-01-11 | 2025-03-04 | 서울시립대학교 산학협력단 | 인공지능 기반의 다이아몬드 제조 방법 및 다이아몬드 제조 장비 |
| CN114941173B (zh) * | 2022-05-26 | 2023-10-10 | 曲阜师范大学 | 一种高相干金刚石氮空穴及金刚石压砧的制备与应用 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6129900A (en) * | 1991-02-15 | 2000-10-10 | Sumitomo Electric Industries, Ltd. | Process for the synthesis of diamond |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3661758A (en) * | 1970-06-26 | 1972-05-09 | Hewlett Packard Co | Rf sputtering system with the anode enclosing the target |
| JPH0798521B2 (ja) * | 1986-08-20 | 1995-10-25 | 澁谷工業株式会社 | 回転式重量充填装置 |
| US4985226A (en) * | 1988-06-20 | 1991-01-15 | Sumitomo Electric Industries, Ltd. | Hole-burning material and production thereof |
| US5099788A (en) * | 1989-07-05 | 1992-03-31 | Nippon Soken, Inc. | Method and apparatus for forming a diamond film |
| US5209182A (en) * | 1989-12-01 | 1993-05-11 | Kawasaki Steel Corporation | Chemical vapor deposition apparatus for forming thin film |
| US5704976A (en) * | 1990-07-06 | 1998-01-06 | The United States Of America As Represented By The Secretary Of The Navy | High temperature, high rate, epitaxial synthesis of diamond in a laminar plasma |
| US5397428A (en) * | 1991-12-20 | 1995-03-14 | The University Of North Carolina At Chapel Hill | Nucleation enhancement for chemical vapor deposition of diamond |
| EP0671482A1 (en) * | 1994-03-11 | 1995-09-13 | General Electric Company | Toughened chemically vapor deposited diamond |
| US5451430A (en) * | 1994-05-05 | 1995-09-19 | General Electric Company | Method for enhancing the toughness of CVD diamond |
| JPH08337498A (ja) * | 1995-04-13 | 1996-12-24 | Sumitomo Electric Ind Ltd | ダイヤモンド粒子、ダイヤモンド合成用粒子及び圧密体並びにそれらの製造方法 |
| JP3675577B2 (ja) * | 1995-07-05 | 2005-07-27 | 日本特殊陶業株式会社 | ダイヤモンド被覆物品の製造方法 |
| US5653800A (en) * | 1995-08-03 | 1997-08-05 | Eneco, Inc. | Method for producing N-type semiconducting diamond |
| JPH0948694A (ja) * | 1995-08-04 | 1997-02-18 | Kobe Steel Ltd | 単結晶ダイヤモンド膜の形成方法 |
| US6858080B2 (en) * | 1998-05-15 | 2005-02-22 | Apollo Diamond, Inc. | Tunable CVD diamond structures |
| US6582513B1 (en) * | 1998-05-15 | 2003-06-24 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
| US6221221B1 (en) * | 1998-11-16 | 2001-04-24 | Applied Materials, Inc. | Apparatus for providing RF return current path control in a semiconductor wafer processing system |
| AU1348901A (en) | 1999-10-28 | 2001-05-08 | P1 Diamond, Inc. | Improved diamond thermal management components |
| DE60135653D1 (de) | 2000-06-15 | 2008-10-16 | Element Six Pty Ltd | Einkristalldiamant hergestellt durch cvd |
| JP3378575B2 (ja) * | 2000-10-27 | 2003-02-17 | 住友電気工業株式会社 | フライスカッタ |
| UA81614C2 (ru) * | 2001-11-07 | 2008-01-25 | Карнеги Инститьюшн Ов Вашингтон | Устройство для изготовления алмазов, узел удержания образца (варианты) и способ изготовления алмазов (варианты) |
| US6811610B2 (en) * | 2002-06-03 | 2004-11-02 | Diamond Innovations, Inc. | Method of making enhanced CVD diamond |
| US20050025886A1 (en) * | 2003-07-14 | 2005-02-03 | Carnegie Institution Of Washington | Annealing single crystal chemical vapor depositon diamonds |
-
2005
- 2005-09-09 CA CA2589299A patent/CA2589299C/en not_active Expired - Fee Related
- 2005-09-09 EP EP05858406A patent/EP1807346A4/en not_active Withdrawn
- 2005-09-09 WO PCT/US2005/032199 patent/WO2007018555A2/en not_active Ceased
- 2005-09-09 TW TW094131127A patent/TWI411710B/zh not_active IP Right Cessation
- 2005-09-09 RU RU2007113175/15A patent/RU2389833C2/ru not_active IP Right Cessation
- 2005-09-09 KR KR1020077008041A patent/KR101277232B1/ko not_active Expired - Fee Related
- 2005-09-09 AU AU2005335208A patent/AU2005335208B2/en not_active Ceased
- 2005-09-09 CN CNA2005800305329A patent/CN101023028A/zh active Pending
- 2005-09-09 BR BRPI0515347-6A patent/BRPI0515347A/pt not_active IP Right Cessation
- 2005-09-09 JP JP2007531378A patent/JP4972554B2/ja not_active Expired - Fee Related
- 2005-09-09 US US11/222,224 patent/US7594968B2/en active Active
-
2007
- 2007-03-07 ZA ZA200702010A patent/ZA200702010B/xx unknown
- 2007-03-08 IL IL181789A patent/IL181789A0/en unknown
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6129900A (en) * | 1991-02-15 | 2000-10-10 | Sumitomo Electric Industries, Ltd. | Process for the synthesis of diamond |
Non-Patent Citations (1)
| Title |
|---|
| Chih-Shiue Yan,"Ultrahard diamond single crystals from chemical vapor deposition", Physica Status Solidi(a), vol.201, no.4, pages R25-R27, 2004/02/20. * |
Also Published As
| Publication number | Publication date |
|---|---|
| ZA200702010B (en) | 2010-06-30 |
| WO2007018555A8 (en) | 2007-08-23 |
| TW200628642A (en) | 2006-08-16 |
| US7594968B2 (en) | 2009-09-29 |
| WO2007018555A2 (en) | 2007-02-15 |
| AU2005335208A1 (en) | 2007-02-15 |
| WO2007018555A3 (en) | 2007-04-05 |
| EP1807346A4 (en) | 2010-04-28 |
| JP4972554B2 (ja) | 2012-07-11 |
| RU2007113175A (ru) | 2008-10-27 |
| CA2589299A1 (en) | 2007-02-15 |
| WO2007018555B1 (en) | 2007-05-24 |
| CA2589299C (en) | 2014-04-01 |
| JP2008512342A (ja) | 2008-04-24 |
| BRPI0515347A (pt) | 2008-07-22 |
| KR20070094725A (ko) | 2007-09-21 |
| US20060065187A1 (en) | 2006-03-30 |
| IL181789A0 (en) | 2007-07-04 |
| KR101277232B1 (ko) | 2013-06-26 |
| AU2005335208B2 (en) | 2010-06-24 |
| RU2389833C2 (ru) | 2010-05-20 |
| EP1807346A2 (en) | 2007-07-18 |
| CN101023028A (zh) | 2007-08-22 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |