Classifications

• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
  • C30B25/02—Epitaxial-layer growth
  • C30B25/10—Heating of the reaction chamber or the substrate
  • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/26—Deposition of carbon only
  • C23C16/27—Diamond only
  • C23C16/274—Diamond only using microwave discharges
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/26—Deposition of carbon only
  • C23C16/27—Diamond only
  • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/26—Deposition of carbon only
  • C23C16/27—Diamond only
  • C23C16/279—Diamond only control of diamond crystallography
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B28/00—Production of homogeneous polycrystalline material with defined structure
  • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B28/00—Production of homogeneous polycrystalline material with defined structure
  • C30B28/12—Production of homogeneous polycrystalline material with defined structure directly from the gas state
  • C30B28/14—Production of homogeneous polycrystalline material with defined structure directly from the gas state by chemical reaction of reactive gases
• • C—CHEMISTRY; METALLURGY
  • C30—CRYSTAL GROWTH
  • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
  • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
  • C30B29/02—Elements
  • C30B29/04—Diamond

Definitions

• the present invention relates to an annealed single-crystal CVD diamond having an extremely high toughness.
• the invention also relates to a process for producing a single- crystal CVD diamond in three dimensions on a single crystal diamond substrate using Microwave Plasma Chemical Vapor Deposition (MPCVD) within a deposition chamber.
• MPCVD Microwave Plasma Chemical Vapor Deposition
• U.S. Patent No. 6,858,078 to Hemley et al. is directed to an apparatus and method for diamond production.
• the disclosed apparatus and method can lead to the production of diamonds that are light brown to colorless.
• U.S. Patent Application No. 10/889,171 is directed to annealing single-crystal chemical vapor deposition diamonds. Important inventive features include raising the CVD diamond to a set temperature of at least 1500 °C and a pressure of at least 4.0 GPa outside of the diamond stable phase.
• U.S. Patent Application No. 10/889,170 is directed to diamonds with improved hardness.
• the application discloses a single-crystal diamond with a hardness greater than 120
• U.S. Patent Application No. 10/889,169 is directed to diamonds with improved toughness.
• the application discloses a single-crystal diamond with a fracture toughness of
• the present invention is directed to a single-crystal diamond and a method of producing such a diamond that substantially obviates one or more of the problems due to limitations and disadvantages of the related art.
• An object of the present invention relates to an ultratough diamond and a method of producing such a diamond in a microwave plasma chemical vapor deposition system.
• Another object of the present invention relates to a method to produce single-crystal diamond with growth in three dimensions on a single crystal diamond substrate.
• an embodiment of the invention comprises a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m 1/2 .
• Another embodiment of the invention relates to a method for growing an ultratough, single-crystal diamond comprising: i) placing a seed diamond in a heat sink holder made of a material that has a high melting point and high thermal conductivity to minimize temperature gradients across the growth surface of the diamond; ii) controlling the temperature of a growth surface of the diamond such that the temperature of the growing diamond crystals is in the range of about 1050-1200 0 C; and iii) growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond in a deposition chamber, wherein the atmosphere comprises a nitrogen to methane ratio of about 4 % N 2 ZCH 4 , iv) annealing the single-crystal diamond such that the annealed single-crystal diamond has a toughness of at least about 30 MPa m 1/2 .
• Another embodiment of the invention relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate, comprising; i) growing single crystal diamond in a first ⁇ 100> face of the single crystal diamond substrate; ii) repositioning the single crystal diamond substrate with the grown single crystal diamond thereon; and iii) growing single crystal diamond in a second ⁇ 100> face of the single crystal diamond substrate.
• FIG. 1 provides photographs of CVD and aCVD diamonds grown under different conditions.
• FIG. 2 depicts indentation patterns for various CVD and aCVD diamonds.
• FIG. 3 is a photoluminescence spectra of various CVD and aCVD diamonds.
• FIG. 4 shows infrared absorption (FTIR) data for various CVD and aCVD diamonds.
• One embodiment of the invention includes a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m 1/2 . In another embodiment, the toughness of the single-crystal diamond is at least about 35 MPa m 1/2 . In another embodiment, the toughness of the single-crystal diamond is at least about 40 MPa m 1/2 .
• the diamonds in these embodiments of the invention were subjected to annealing, for example, at temperatures of about 2000 0 C to about 2700 0 C for about 10 minutes using a belt-type apparatus. This caused a dramatic increase in the hardness of the diamonds.
• the hardness is from about 100 to about 160 GPa.
• K 0 (0.016 ⁇ 0.004) (E/H V ) 1/2 (P/C 3/2 ), in which E is the Young's modulus of diamond, d is the average length of the indentation cavity in the single crystal diamond, and c is the average length of the radial cracks in the single crystal diamond.
• Another embodiment includes a method for growing an ultratough, single-crystal diamond comprising: i) placing a seed diamond in a heat sink holder made of a material that has a high melting point and high thermal conductivity to minimize temperature gradients across the growth surface of the diamond; ii) controlling the temperature of a growth surface of the diamond such that the temperature of the growing diamond crystals is in the range of about 1050-1200 0 C; and iii) growing single-crystal diamond by microwave plasma chemical vapor deposition on the growth surface of a diamond in a deposition chamber, wherein the atmosphere comprises a nitrogen to methane ratio of about 4 % N 2 /CH 4 , iv) annealing the single-crystal diamond such that the annealed single-crystal diamond has a toughness of at least about 30 MPa m 1/2 .
• the aforementioned method further comprises annealing the single-crystal diamond at pressures in excess of about 5 to about 7 GPa and temperatures of from about 2000 0 C to about 2700 0 C such that the hardness is from about 100 to about 160 GPa.
• the single crystal diamond prior to annealing is substantially colorless.
• Another embodiment of the invention includes a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate, comprising:
• the deposition temperature is from about 1150 0 C to about 1250 0 C.
• the three dimensional diamond produced is larger than about one cubic inch.
• the color change is achieved by placing the Ib diamond on a substrate holder with only modest thermal conductivity (e.g., hBN powder or Mo wires to hold the substrate).
• the color change appears similar to that reported for natural diamond on HPHT annealing. See LM. Reinitz, et ah, Gems & Gemology (2000) 36, 128.
• CVD diamond did not undergo obvious color changes and transformed to graphite at temperatures above 1800 0 C in the same process. It was therefore of interest to anneal CVD diamond at higher temperature over 2000 0 C by High Pressure/High Temperature (HPHT) methods.
• HPHT High Pressure/High Temperature
• Single crystal diamonds were synthesized by microwave plasma chemical vapor deposition (CVD) at 8-20% CH 4 ZH 2 , 0.2-3% N 2 ZCH 4 , 160-220 torr at various temperatures.
• the diamonds shown in FIG.l were grown at the following temperatures: (a) 1300 0 C; (b) 1250 0 C; (c) 1400 0 C; (d) 1200 0 C; (e) 1050 0 C.
• Diamond (f) is the type Ib diamond substrate (4 x 4 x 1.5 mm 3 ). All substrates were HPHT synthetic type Ib yellow diamonds with ⁇ 100 ⁇ faces on top and on the sides. Morphologies and colors of the as-grown CVD diamonds strongly depend on the deposition temperature.
• the top growth surface of the sample has been enlarged by a factor of two relative to the substrate [FIG.l(d)], whereas the shape of the sample in FIG.l(a) remains similar.
• colorless CVD diamond with nitrogen added can be enlarged along three ⁇ 100> directions at deposition temperatures around 1200 0 C.
• Such three-dimensional enlargement of the structures at around 1200 0 C is important for continued growth to produce gem-quality diamond with much larger lateral dimensions than the substrates.
• gem-quality CVD diamond can be grown individually and sequentially on the 6 ⁇ 100 ⁇ faces of the substrate. By this method, a one inch cube of single crystal diamond (-300 carat) is achievable.
• FIG.2(a) shows the indentation pattern of Natural Ha diamond that has a hardness of approximately 110 GPa.
• FIG.2(b) shows the indentation pattern of annealed IIa diamond with a hardness of approximately 140 GPa.
• FIG.2(c) shows the indentation pattern of unannealed CVD diamond with a hardness of about 60 GPa.
• FIG.2(d) shows the indentation pattern of annealed, colorless, ultrahard aCVD diamond grown under low nitrogen conditions, which has a hardness of about 160 GPa.
• FIG.2(e) shows the indentation pattern of ultrahard aCVD diamond grown under high nitrogen conditions, which has a hardness of about 160 GPa.
• FIG.2(f) shows the indentation pattern of colorless, ultratough aCVD diamond grown under high nitrogen conditions, with a hardness of from about 100 to aobut 160 GPa.
• the circular indentation patterns seen after annealing in the colorless diamonds grown at low nitrogen/methane ratio (about 0.4% N 2 /CH 4 ) and about 1200 0 C (FIG.2(d)) are similar to those of annealed natural type Ha diamonds (FIG.2(b)).
• a remarkable fracture pattern was observed for the colorless diamond grown at high nitrogen after annealing (FIG.2(f)).
• FIG. 3 shows Photoluminescence (PL) and Raman spectra that were measured with 488 nm excitation.
• CVD diamonds showed an obvious nitrogen-vacancy (N-V) center at 575 nm; the intensity of this band is higher for the brown relative to the colorless CVD diamonds.
• N-V nitrogen-vacancy
• the as-grown brown CVD diamond that had been annealed to colorless possesses a strong nitrogen aggregate (H3) center ⁇ see SJ. Charles et al, (2004) Physica Status Solidi (a): 1-13) at 503 nm with a decrease in the band associated with the N-V center. Note that the H3 peak is strongest for the unindented (ultrahard) diamond.
• the annealed as-grown colorless CVD diamond possesses both H3 and N-V centers, but the intensities of these bands decreased by two orders after annealing, and the second-order Raman band of diamond appeared.
• the N-V centers in the annealed CVD may imply vacancy-rich CVD transforms to denser structures after HPHT annealing.
• FIG. 4 shows the C-H stretching of infrared absorption in the range of 2800-3200 cm “1 .
• the broad band at 2930 cm “1 attributed to hydrogenated amorphous carbon (a-C:H) is observed in the brown CVD diamond. This intensity correlates with the brown color of the diamond and its high toughness.
• the a-C:H peak was annealed to various well-resolved C-H stretching bands at 2830 cm “1 (sp 3 ⁇ 111 ⁇ defects), 2875 (sp 3 -CH 3 defects), and 2900 cm “1 (sp 3 ⁇ 100 ⁇ defects) as well as 2972, 3032 and 3107 cm “1 (sp 2 defects) ⁇ see K.M.
• the ⁇ 111 ⁇ surfaces within the aCVD implies the relatively open a-C:H structure in the as-grown ⁇ 100 ⁇ CVD transformed on annealing to locally denser structure. For example, there is an increase in internal ⁇ 111 ⁇ defects and sp 2 carbon on the boundary. This change may contribute to the square ⁇ 111> or ⁇ 110> indented pattern in FIG.2.
• the colorless CVD diamond has lower intensity bands associated with a-C:H exhibited a broad and intense band at 2800 cm "1 . This feature could be associated with unintentional contamination of boron ⁇ see Z.
• the full width at half-maximum (FWHM) of the colorless diamond is -20 arcsec, brown CVD is -80 arcsec, and aCVD is -150-300 arcsec.
• FWHM full width at half-maximum
• brown CVD is -80 arcsec
• aCVD is -150-300 arcsec.
• the mechanism of the very high fracture toughness documented here may be associated with the small amount of amorphous carbon or dislocations that exist in these single-crystal CVD diamonds. Denser sp 2 or sp 3 hybridized nanocrystals combined with changes in nitrogen and hydrogen impurities on their grain boundary may occur during HPHT annealing.
• the ultratough diamonds of the invention and diamonds produced by the above methods will be sufficiently large, tough, defect free and translucent so as to be useful as, for example, windows in high power laser or synchrotron applications, as anvils in high pressure apparatuses, as cutting instruments, as wire dies, as components for electronics (heat sinks, substrates for electronic devices), or as gems.
• a. wear resistant material — including, but not limited to, water/fluid jet nozzles, razors, surgical blades, microtone, hardness indentor, graphical tools, stichels, instruments used in the repair of lithographic pieces, missile radomes, bearings, including those used in ultra-high speed machines, diamond-biomolecule devices, microtomes, and hardness indentors;
• optical parts including, but not limited to, optical windows, reflectors, refractors, lenses, gratings, etalons, alpha particle detectors, and prims;
• electronics including, but not limited to, microchannel cooling assemblies; high purity SC-CVD diamonds for semiconductor components, SC-CVD doped with impurities for semiconductor components d.) anvils in high pressure apparatuses — including, but not limited to, the "Khvostantsev" or "Paris
• the ultratough diamonds disclosed herein are particularly useful in applications, including, but not limited to, water/fluid jet nozzles, razors, surgical blades, microtone, hardness indentor, graphical tools, stichels, instruments used in the repair of lithographic pieces, missile radomes, bearings, including those used in ultra-high speed machines, diamond-biomolecule devices, microtomes, hardness indentors, and anvils in high pressure apparatuses.
• the present invention is directed to anvils in high pressure apparatuses, wherein the anvils comprise ultratough single-crystal CVD diamond.
• Anvils comprising ultratough single-crystal CVD diamond can be used at higher pressures than anvils made of other materials, such as tungsten carbide.
• the present invention is directed to an ultratough single- crystal CVD diamond that is laser inscribed with identifying marks (e.g., name, date, number) and a method of preparing such a diamond.
• identifying marks e.g., name, date, number
• the identifying marks can be laser inscribed onto a diamond substrate prior to starting the CVD process to prepare a single-crystal diamond. The mark is transferred to the single-crystal diamond through this process.

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• 2005
  • 2005-09-09 CA CA2589299A patent/CA2589299C/en not_active Expired - Fee Related
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