CN101017959A - 脊形波导半导体激光二极管 - Google Patents
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Abstract
本发明提供了一种具有改进的电流注入结构的脊形波导半导体激光二极管。所述脊形波导半导体激光二极管包括：衬底；形成于所述衬底上的下部多半导体层；形成于所述下部多半导体层上的有源层；具有脊形部分，并且形成于所述有源层上的上部多半导体层；以及形成于所述上部多半导体层上的上部电极，其中，所述上部电极覆盖所述脊形部分的至少一个侧表面。
Description
技术领域
本发明涉及一种脊形波导半导体激光二极管(LD)，更具体而言，涉及一种配置成至少通过脊形部分的侧表面侧向注入电流的脊形波导半导体LD。
背景技术
半导体激光二极管(LD)广泛应用于在诸如光通信器件的通信器件以及诸如光盘播放器(CDP)或数字视频磁盘播放器(DVDP)的电子器件中传输、记录和读取数据。
随着半导体LD使用的增多，已经开发出了具有低临界电流值和抑制多横模振荡的脊形部分的半导体LD。所述脊形部分由向上突起的p型履层和p型接触层形成，电流(空穴)向下垂直注入到所述脊形部分当中。但是，垂直电流注入具有这样的缺点：当电流(空穴)通过包括p型覆层和p型波导层的p型半导体层时，由于掺有诸如镁(Mg)的杂质的区域的高电阻，功耗高并且产生热量。
发明内容
本发明提供了一种具有改进的电流注入结构的脊形波导半导体激光二极管。
根据本发明的一方面，提供了一种脊形波导半导体激光二极管，包括：衬底；形成于所述衬底上的下部多半导体层；形成于所述下部多半导体层上的有源层；具有脊形部分，并且形成于所述有源层上的上部多半导体层；以及形成于所述上部多半导体层上的上部电极，其中，所述上部电极覆盖所述脊形部分的至少一个侧表面。
附图说明
通过参考附图详细描述其示范性实施例，本发明的以上和其他特征和益处将变得更加显见，附图中：
图1是根据本发明实施例的脊形波导半导体激光二极管(LD)的截面图；
图2是说明图1的脊形波导半导体LD的电流注入结构的截面图；
图3是常规脊形波导半导体LD的截面图；
图4是说明图3的常规脊形波导半导体LD和根据本发明实施例的脊形波导半导体LD的工作电压和工作电流之间的关系的曲线图；以及
图5A和图5B是说明工作电流和电压如图4所示的两个LD的温度分布的图示。
具体实施方式
现在将参考附图更为充分地描述本发明，附图中展示了本发明的示范性实施例。
图1是根据本发明实施例的脊形波导半导体激光二极管(LD)的截面图。
参考图1，在衬底100上形成下部多半导体层110。下部多半导体层110包括下部接触层120、下部履层130和下部波导层140。在下部接触层120的一侧上依次形成有源层150、上部多半导体层160、上部接触层190和上部电极200，在下部接触层120的另一侧上形成下部电极210。
可以将上部多半导体层160划分为第一到第三区域R1、R2和R3。
第一区域R1具有从上部多半导体层160的中央部分以条状突起的脊形部分165。脊形部分165可以垂直突起，或者发生倾斜从而具有梯形截面。
上部多半导体层160包括上部波导层170和上部履层180。上部波导层170的一部分和上部履层180形成于脊形部分165上。
可以在上部波导层170内形成电子阻挡层171。电子阻挡层171的能级比上部波导层170的能级高得多，使得电子阻挡层171能够阻挡电子溢出。
可以在上部波导层170内埋入电流散布层175。将电流散布层175设置在上部波导层170上的脊形部分165上。电流散布层175使注入的电流遍布它的整个表面，使得电流能够被均匀地注入到有源层150内。
上部接触层190和上部电极200覆盖脊形部分165的至少一个侧表面165b，从而能够通过侧表面165b注入电流。为了通过脊形部分165的上表面165a注入电流，也可以形成覆盖脊形部分165的上表面165a的上部接触层190和上部电极200。
第二和第三区域R2和R3形成于脊形部分165之外的上部波导层170的部分上，在第二和第三区域R2和R3上形成绝缘层205。绝缘层205覆盖电流散布层175的两个侧边。绝缘层205使上部接触层190与上部波导层170和电流散布层175绝缘。
本实施例的脊形波导半导体LD可以是GaN基半导体LD。具体而言，可以按照下述说明形成脊形波导半导体LD。
衬底100可以由蓝宝石(Al2O3)、氮化镓(GaN)、硅(Si)、氮化铝(AlN)或碳化硅(SiC)形成。
下部接触层120可以由n-GaN形成。下部覆层130可以由n-AlxGa1-xN(0≤x＜1)形成。下部波导层140可以由n-InxGa1-xN(0≤x＜1)形成。有源层150可以由InxGa1-xN(0＜x＜1)形成，并且可以具有单量子阱或多量子阱结构。上部波导层170可以由p-InxGa1-xN(0≤x＜1)形成。电子阻挡层171可以由p-AlxGa1-xN(0＜x＜1)化合物半导体形成。
电流散布层175可以具有p-GaN层和p-InGaN层的异质结结构，使得电流散布层175的能级可以比上部波导层170的能级低得多。
上部覆层180可以是由p-AlxGa1-xN(0≤x＜1)形成的单层，或者可以具有超晶格结构，所述超晶格结构由交替重复叠置具有不同的铝(Al)成分比的p-AlxGa1-xN(0≤x＜1)层形成。例如，上部覆层180可以具有超晶格结构，其中重复叠置p-Al0.08Ga0.92N层和p-GaN层。所述超晶格结构引起了载流子注入电阻和断裂危险二者的降低，因此能够使上部履层180进行稳定地晶体生长，并且能够保持高光限制效应。
上部接触层190改善了上部覆层180和上部电极200之间的欧姆接触特性，并且上部接触层190可以通过依次在上部覆层180的上表面180a和侧表面180b上叠置p+-GaN/Pd层形成。
上部电极200可以由例如通常使用的电极材料的高导电性金属材料构成。具体而言，上部电极200可以是由Au、Ni、Ti或Al形成的单层，或者可以是这些材料的双层。
绝缘层205可以由诸如SiO2的绝缘材料形成。
现在将参考图2解释根据本实施例的脊形波导半导体LD的工作。图2是说明图1的脊形波导半导体LD的电流注入结构的截面图。
参考图2，在向上部电极200施加电压后，电流即载流子被注入到了上部接触层190当中。当形成于有源层150上的层为如上所述的p型层时，注入到上部接触层190内的载流子为空穴。由于上部电极200和上部接触层190覆盖上部履层180，因此，载流子被通过上部覆层180的侧表面180b以及上表面180a注入。在如图2所示通过脊形部分165的侧表面165b注入电流时，缩短了载流子在具有高电阻的p型上部覆层180中经过的通路，由此降低了载流子注入电阻。而且，通过上表面180a和侧表面180b注入电流时的电流通路比仅通过上表面180a注入电流时的电流通路具有更大的面积，由此降低了电阻。因此，由于能够以比采用常规脊形波导半导体LD时低的工作电压提供相同的功率，因此，就工作电压和功率而言，本实施例的脊形波导半导体LD优于常规脊形波导半导体LD。此外，由于通过侧表面180b注入的电流在穿过电流散布层175的过程中散布开，防止了电流流向一侧。
而且，当上部覆层180具有通过交替叠置具有不同Al成分比的p-AlxGa1-xN(0≤xl)层形成的超晶格结构时，载流子通过隧穿或载流子溢出穿过上部覆层180，从而进一步降低了注入电阻。
此外，由于由具有高热导率的金属材料构成的上部电极200覆盖上部覆层180的侧表面180b和上表面180a，因此，本实施例的脊形波导半导体LD具有高散热能力。
此外，本实施例的脊形波导半导体LD能够改善长波长半导体LD的电特性。一般而言，发射具有长波长的蓝色或绿色激光束的半导体LD采用低温p型半导体层。就电特性而言，低温p型半导体层较高温p型半导体层的逊色之处在于：低温p型半导体中空穴浓度低，电阻高。本实施例的脊形波导半导体LD能够通过改善电流注入机制而改善采用低温半导体层的长波长半导体LD的电特性。
现在，将在下文中解释与常规脊形波导半导体LD比较，根据本发明实施例的脊形波导半导体LD的效果。
<常规脊形波导半导体LD>
制造了具有如图3所示的垂直电流注入结构的常规脊形波导半导体LD。所述常规脊形波导半导体LD为III族氮化物基半导体LD。上部波导层270形成于有源层250上。上部履层280从上部波导层270的中央部分向上突出。上部履层280构成了脊形部分。上部接触层290和上部电极300依次叠置于上部履层280的上表面上。绝缘层305形成于上部履层280的侧表面上以及脊形部分之外的上部波导层270的上表面上。脊形部分之外的上部波导层270的厚度D1大约为500，绝缘层305的厚度D2大约为1500或更低。
<本实施例的脊形波导半导体LD>
制造了如图2所示的、根据本发明实施例的、既允许垂直注入又允许侧面注入的脊形波导半导体LD。本实施例的脊形波导半导体LD与常规脊形波导半导体LD类似，除了所形成的上部接触层190和上电极200覆盖上部覆层180的侧表面和上表面以外。
现在将参考图4、图5A和图5B解释所制造的两个LD的特性。
图4是说明图3的常规脊形波导半导体LD和根据本发明实施例的脊形波导半导体LD的工作电压和工作电流之间的关系的曲线图。参考图4，就常规脊形波导半导体LD而言，产生50mA的电流所需的工作电压为4.36V，而就本实施例的脊形波导半导体LD而言，产生50mA的电流所需的工作电压为4.03V，比4.36V低了大约0.3V。也就是说，常规脊形波导半导体LD的注入电阻为17.0Ω，本实施例的脊形波导半导体LD的注入电阻为15.5Ω。
图5A和图5B分别是说明常规脊形波导半导体LD和本实施例的脊形波导半导体LD的温度分布的图示。参考图5A和图5B，本实施例脊形波导半导体LD的温度总体上低于常规脊形波导半导体LD的温度。在常规脊形波导半导体LD的表面温度为130.47℃时，本实施例的脊形波导半导体LD的表面温度为117.93℃，比130.47℃低大约10％。这是因为，本实施例的脊形波导半导体LD在上部履层的低注入电阻的作用下减少了上部履层中的热生成量，并且能够通过形成于上部覆层的侧表面上的由金属构成的上部电极散热。
如上所述，根据本发明的脊形波导半导体LD具有下述优点。
首先，由于通过脊形部分的两个侧表面注入电流，因而能够降低注入电阻，并且能够取得高工作电压和功率。
其次，由于由金属材料构成的上部电极覆盖脊形部分的两个侧表面，因此能够确保有效的散热。
尽管已经参考其示范性实施例特别展示和描述了本发明，但是本领域的普通技术人员将理解，可以在其中做出多种形式和细节上的变化而不脱离由权利要求所限定的本发明的精神和范围。
Claims (10)
1.一种脊形波导半导体激光二极管，包括：
衬底；
形成于所述衬底上的下部多半导体层；
形成于所述下部多半导体层上的有源层；
具有脊形部分并且形成于所述有源层上的上部多半导体层；以及
形成于所述上部多半导体层上的上部电极，
其中，所述上部电极覆盖所述脊形部分的至少一个侧表面，通过所述脊形部分的侧表面注入电流。
2.根据权利要求1所述的脊形波导半导体激光二极管，其中，所述上部电极覆盖所述脊形部分的至少一个侧面和上表面。
3.根据权利要求1所述的脊形波导半导体激光二极管，其中，所述上部多半导体层包括上部波导层和上部履层，所述上部波导层的一部分和所述上部履层形成于所述脊形部分上。
4.根据权利要求3所述的脊形波导半导体激光二极管，还包括形成于所述上部电极和所述上部履层之间的上部接触层。
5.根据权利要求4所述的脊形波导半导体激光二极管，还包括埋入所述上部波导层内并形成于所述脊形部分上的电流散布层。
6.根据权利要求5所述的脊形波导半导体激光二极管，其中，所述电流散布层具有p-GaN层和p-InGaN层的异质结结构。
7.根据权利要求4所述的脊形波导半导体激光二极管，还包括使所述上部接触层与所述上部波导层和所述电流散布层绝缘的绝缘层。
8.根据权利要求3所述的脊形波导半导体激光二极管，其中，所述上部覆层具有通过交替重复叠置具有不同铝成分比的AlxGa1-xN层形成的超晶格结构，其中0≤x＜1。
9.根据权利要求1所述的脊形波导半导体激光二极管，其中，所述下部多半导体层由n型半导体形成，所述上部多半导体层由p型半导体形成。
10.根据权利要求1所述的脊形波导半导体激光二极管，其中，所述下部多半导体层、所述有源层和所述上部多半导体层由GaN基材料形成。
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| CN101257080B (zh) * | 2008-03-11 | 2014-10-15 | 北京大学东莞光电研究院 | 氮化物基脊型发光二极管和激光器及制备方法 |
| US10355453B2 (en) | 2017-11-08 | 2019-07-16 | International Business Machines Corporation | Electro-optical device with lateral electron blocking layer |
| CN110140264A (zh) * | 2016-12-29 | 2019-08-16 | 欧司朗光电半导体有限公司 | 半导体激光二极管 |
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| US8169890B2 (en) * | 2005-07-20 | 2012-05-01 | Qualcomm Incorporated | Systems and method for high data rate ultra wideband communication |
| JP2009021424A (ja) * | 2007-07-12 | 2009-01-29 | Opnext Japan Inc | 窒化物半導体発光素子及びその製造方法 |
| US8073031B2 (en) * | 2008-03-03 | 2011-12-06 | Sharp Kabushiki Kaisha | Laser diode with improved heat dissipation |
| KR101064006B1 (ko) * | 2009-03-03 | 2011-09-08 | 엘지이노텍 주식회사 | 발광소자 |
| KR101827975B1 (ko) * | 2011-10-10 | 2018-03-29 | 엘지이노텍 주식회사 | 발광소자 |
| CN111357158B (zh) * | 2017-11-17 | 2022-08-30 | 三菱电机株式会社 | 半导体装置及半导体装置的制造方法 |
| WO2022097258A1 (ja) * | 2020-11-06 | 2022-05-12 | 三菱電機株式会社 | 光半導体装置およびその製造方法 |
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| CN101257080B (zh) * | 2008-03-11 | 2014-10-15 | 北京大学东莞光电研究院 | 氮化物基脊型发光二极管和激光器及制备方法 |
| CN110140264A (zh) * | 2016-12-29 | 2019-08-16 | 欧司朗光电半导体有限公司 | 半导体激光二极管 |
| US11011887B2 (en) | 2016-12-29 | 2021-05-18 | Osram Oled Gmbh | Semiconductor laser diode |
| US11626707B2 (en) | 2016-12-29 | 2023-04-11 | Osram Oled Gmbh | Semiconductor laser diode |
| US10355453B2 (en) | 2017-11-08 | 2019-07-16 | International Business Machines Corporation | Electro-optical device with lateral electron blocking layer |
| US10700496B2 (en) | 2017-11-08 | 2020-06-30 | International Business Machines Corporation | Electro-optical device with lateral electron blocking layer |
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| JP5314251B2 (ja) | 2013-10-16 |
| CN101017959B (zh) | 2011-09-21 |
| KR101221067B1 (ko) | 2013-01-11 |
| US20060280215A1 (en) | 2006-12-14 |
| JP2007214570A (ja) | 2007-08-23 |
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| US7483463B2 (en) | 2009-01-27 |
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