CN101001975A - 等离子体处理系统中最佳温度控制的方法和设备 - Google Patents

等离子体处理系统中最佳温度控制的方法和设备 Download PDF

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Publication number
CN101001975A
CN101001975A CNA2005800270885A CN200580027088A CN101001975A CN 101001975 A CN101001975 A CN 101001975A CN A2005800270885 A CNA2005800270885 A CN A2005800270885A CN 200580027088 A CN200580027088 A CN 200580027088A CN 101001975 A CN101001975 A CN 101001975A
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CN
China
Prior art keywords
temperature
control device
heat
heating member
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2005800270885A
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English (en)
Chinese (zh)
Inventor
米格尔·A·萨尔达纳
莱奥纳尔·J·沙普尔斯
约翰·E·多尔蒂
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Lam Research Corp
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Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN101001975A publication Critical patent/CN101001975A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B29/00—Combined heating and refrigeration systems, e.g. operating alternately or simultaneously
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D1/00—Heat-exchange apparatus having stationary conduit assemblies for one heat-exchange medium only, the media being in contact with different sides of the conduit wall, in which the other heat-exchange medium is a large body of fluid, e.g. domestic or motor car radiators
    • F28D1/06—Heat-exchange apparatus having stationary conduit assemblies for one heat-exchange medium only, the media being in contact with different sides of the conduit wall, in which the other heat-exchange medium is a large body of fluid, e.g. domestic or motor car radiators with the heat-exchange conduits forming part of, or being attached to, the tank containing the body of fluid
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
    • F28D2021/0019—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
    • F28D2021/0077—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for tempering, e.g. with cooling or heating circuits for temperature control of elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F28F2013/005—Thermal joints
    • F28F2013/006—Heat conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CNA2005800270885A 2004-06-30 2005-06-14 等离子体处理系统中最佳温度控制的方法和设备 Pending CN101001975A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/882,464 2004-06-30
US10/882,464 US20060000551A1 (en) 2004-06-30 2004-06-30 Methods and apparatus for optimal temperature control in a plasma processing system

Publications (1)

Publication Number Publication Date
CN101001975A true CN101001975A (zh) 2007-07-18

Family

ID=35512686

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2005800270885A Pending CN101001975A (zh) 2004-06-30 2005-06-14 等离子体处理系统中最佳温度控制的方法和设备

Country Status (6)

Country Link
US (1) US20060000551A1 (ko)
JP (1) JP2008505492A (ko)
KR (1) KR20070037500A (ko)
CN (1) CN101001975A (ko)
TW (1) TW200605135A (ko)
WO (1) WO2006012021A2 (ko)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102172105A (zh) * 2008-09-03 2011-08-31 冲野晃俊 等离子体温度控制装置和等离子体温度控制方法
CN103907395A (zh) * 2011-08-30 2014-07-02 沃特洛电气制造公司 具有流体介质的高清晰度加热器系统
CN104885026A (zh) * 2012-12-25 2015-09-02 科理克株式会社 温度控制装置
CN108385070A (zh) * 2018-04-13 2018-08-10 深圳市华星光电技术有限公司 防着板以及溅射装置
CN110797249A (zh) * 2018-08-02 2020-02-14 北京北方华创微电子装备有限公司 工艺腔室和半导体处理设备

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US8540843B2 (en) 2004-06-30 2013-09-24 Lam Research Corporation Plasma chamber top piece assembly
US7780791B2 (en) * 2004-06-30 2010-08-24 Lam Research Corporation Apparatus for an optimized plasma chamber top piece
US20060213763A1 (en) * 2005-03-25 2006-09-28 Tokyo Electron Limited Temperature control method and apparatus, and plasma processing apparatus
US8548312B2 (en) * 2010-02-19 2013-10-01 Applied Materials, Inc. High efficiency high accuracy heater driver
US8852347B2 (en) * 2010-06-11 2014-10-07 Tokyo Electron Limited Apparatus for chemical vapor deposition control
US20120322175A1 (en) * 2011-06-14 2012-12-20 Memc Electronic Materials Spa Methods and Systems For Controlling SiIicon Rod Temperature
CN202979450U (zh) * 2011-12-31 2013-06-05 长春吉大·小天鹅仪器有限公司 一种mpt微波能量真空管水冷装置
CN104364290B (zh) 2012-06-08 2016-09-07 Adeka株式会社 固化性树脂组合物、树脂组合物、树脂片、及这些组合物和树脂片的固化物
KR101524201B1 (ko) * 2013-12-24 2015-06-01 한국철도기술연구원 고속 철도 차량용 냉·난방장치
KR101524200B1 (ko) * 2013-12-24 2015-06-01 한국철도기술연구원 전동차 차량용 냉·난방장치
CN111383881B (zh) * 2018-12-27 2023-03-07 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体处理器及其温度调节方法
TWI728774B (zh) * 2020-04-09 2021-05-21 健鼎科技股份有限公司 電路板結構的製造方法
TWI825711B (zh) * 2021-06-25 2023-12-11 美商得昇科技股份有限公司 電漿處理設備

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Publication number Priority date Publication date Assignee Title
CN102172105B (zh) * 2008-09-03 2014-06-04 冲野晃俊 等离子体温度控制装置和等离子体温度控制方法
CN102172105A (zh) * 2008-09-03 2011-08-31 冲野晃俊 等离子体温度控制装置和等离子体温度控制方法
US10361103B2 (en) 2011-08-30 2019-07-23 Watlow Electric Manufacturing Company High definition heater system having a fluid medium
CN103907395A (zh) * 2011-08-30 2014-07-02 沃特洛电气制造公司 具有流体介质的高清晰度加热器系统
CN104067691A (zh) * 2011-08-30 2014-09-24 沃特洛电气制造公司 高清晰度加热器和操作方法
US11133201B2 (en) 2011-08-30 2021-09-28 Watlow Electric Manufacturing Company High definition heater system having a fluid medium
CN103907395B (zh) * 2011-08-30 2016-12-21 沃特洛电气制造公司 具有流体介质的高清晰度加热器系统
CN104067691B (zh) * 2011-08-30 2017-04-19 沃特洛电气制造公司 高清晰度加热器和操作方法
US10043685B2 (en) 2011-08-30 2018-08-07 Watlow Electric Manufacturing Company High definition heater and method of operation
US10734256B2 (en) 2011-08-30 2020-08-04 Watlow Electric Manufacturing Company High definition heater and method of operation
CN104885026B (zh) * 2012-12-25 2017-03-01 科理克株式会社 温度控制装置
US10497547B2 (en) 2012-12-25 2019-12-03 Kelk Ltd. Temperature control device
CN104885026A (zh) * 2012-12-25 2015-09-02 科理克株式会社 温度控制装置
CN108385070A (zh) * 2018-04-13 2018-08-10 深圳市华星光电技术有限公司 防着板以及溅射装置
CN110797249A (zh) * 2018-08-02 2020-02-14 北京北方华创微电子装备有限公司 工艺腔室和半导体处理设备

Also Published As

Publication number Publication date
WO2006012021A3 (en) 2006-09-28
JP2008505492A (ja) 2008-02-21
TW200605135A (en) 2006-02-01
US20060000551A1 (en) 2006-01-05
KR20070037500A (ko) 2007-04-04
WO2006012021A2 (en) 2006-02-02

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