WO2006012021A3 - Methods and apparatus for optimal temperature control in a plasma processing system - Google Patents

Methods and apparatus for optimal temperature control in a plasma processing system Download PDF

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Publication number
WO2006012021A3
WO2006012021A3 PCT/US2005/021202 US2005021202W WO2006012021A3 WO 2006012021 A3 WO2006012021 A3 WO 2006012021A3 US 2005021202 W US2005021202 W US 2005021202W WO 2006012021 A3 WO2006012021 A3 WO 2006012021A3
Authority
WO
WIPO (PCT)
Prior art keywords
temperature control
plasma processing
control device
upper chamber
temperature
Prior art date
Application number
PCT/US2005/021202
Other languages
French (fr)
Other versions
WO2006012021A2 (en
Inventor
Miguel A Saldana
Leonard J Sharpless
John E Daugherty
Original Assignee
Lam Res Corp
Miguel A Saldana
Leonard J Sharpless
John E Daugherty
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp, Miguel A Saldana, Leonard J Sharpless, John E Daugherty filed Critical Lam Res Corp
Priority to JP2007519258A priority Critical patent/JP2008505492A/en
Publication of WO2006012021A2 publication Critical patent/WO2006012021A2/en
Publication of WO2006012021A3 publication Critical patent/WO2006012021A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
    • F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
    • F25B29/00—Combined heating and refrigeration systems, e.g. operating alternately or simultaneously
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D1/00—Heat-exchange apparatus having stationary conduit assemblies for one heat-exchange medium only, the media being in contact with different sides of the conduit wall, in which the other heat-exchange medium is a large body of fluid, e.g. domestic or motor car radiators
    • F28D1/06—Heat-exchange apparatus having stationary conduit assemblies for one heat-exchange medium only, the media being in contact with different sides of the conduit wall, in which the other heat-exchange medium is a large body of fluid, e.g. domestic or motor car radiators with the heat-exchange conduits forming part of, or being attached to, the tank containing the body of fluid
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
    • F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
    • F28D2021/0019—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
    • F28D2021/0077—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for tempering, e.g. with cooling or heating circuits for temperature control of elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F28—HEAT EXCHANGE IN GENERAL
    • F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
    • F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
    • F28F2013/005—Thermal joints
    • F28F2013/006—Heat conductive materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Thermal Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A temperature control device (308) for controlling temperature of an upper chamber (312) of a plasma processing apparatus (300) is described. The temperature control device includes a thermally conductive body (334) having an inner surface and an outer surface removably connected with and in thermal communication with the upper chamber of the plasma processing apparatus. The temperature control device also includes a plurality of thermal interface layers (344, 348, 350, 352) in thermal communication with the thermally conductive body wherein at least one layer is a heating element (350); and a cooling element (326) connected with the banded thermally conductive body and thermally coupled with the upper chamber of the plasma processing apparatus wherein the cooling element is configured to conduct a fluidic medium. The temperature control device further includes at least one temperature sensor for sensing temperature of the upper chamber, a temperature control unit for controlling the heating element and the cooling element; and a latching mechanism for securing the temperature control device to the upper chamber.
PCT/US2005/021202 2004-06-30 2005-06-14 Methods and apparatus for optimal temperature control in a plasma processing system WO2006012021A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007519258A JP2008505492A (en) 2004-06-30 2005-06-14 Apparatus and method for controlling inside of plasma processing apparatus to optimum temperature

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/882,464 2004-06-30
US10/882,464 US20060000551A1 (en) 2004-06-30 2004-06-30 Methods and apparatus for optimal temperature control in a plasma processing system

Publications (2)

Publication Number Publication Date
WO2006012021A2 WO2006012021A2 (en) 2006-02-02
WO2006012021A3 true WO2006012021A3 (en) 2006-09-28

Family

ID=35512686

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/021202 WO2006012021A2 (en) 2004-06-30 2005-06-14 Methods and apparatus for optimal temperature control in a plasma processing system

Country Status (6)

Country Link
US (1) US20060000551A1 (en)
JP (1) JP2008505492A (en)
KR (1) KR20070037500A (en)
CN (1) CN101001975A (en)
TW (1) TW200605135A (en)
WO (1) WO2006012021A2 (en)

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US7780791B2 (en) * 2004-06-30 2010-08-24 Lam Research Corporation Apparatus for an optimized plasma chamber top piece
US8540843B2 (en) 2004-06-30 2013-09-24 Lam Research Corporation Plasma chamber top piece assembly
US20060213763A1 (en) * 2005-03-25 2006-09-28 Tokyo Electron Limited Temperature control method and apparatus, and plasma processing apparatus
JP4611409B2 (en) * 2008-09-03 2011-01-12 晃俊 沖野 Plasma temperature control device
US8548312B2 (en) * 2010-02-19 2013-10-01 Applied Materials, Inc. High efficiency high accuracy heater driver
US8852347B2 (en) * 2010-06-11 2014-10-07 Tokyo Electron Limited Apparatus for chemical vapor deposition control
US20120322175A1 (en) * 2011-06-14 2012-12-20 Memc Electronic Materials Spa Methods and Systems For Controlling SiIicon Rod Temperature
CN103999545B (en) 2011-08-30 2018-02-06 沃特洛电气制造公司 The method for manufacturing fine definition heater system
CN103068138A (en) * 2011-12-31 2013-04-24 长春吉大·小天鹅仪器有限公司 Water cooling device of multi-power transmission (MPT) microwave energy vacuum tube
TWI568764B (en) 2012-06-08 2017-02-01 Adeka股份有限公司 Curable resin composition, resin composition, resin sheet made of which and curable composition thereof
JP6088817B2 (en) 2012-12-25 2017-03-01 株式会社Kelk Temperature control device
KR101524201B1 (en) * 2013-12-24 2015-06-01 한국철도기술연구원 High-speed railway vehicle cooling and heating device
KR101524200B1 (en) * 2013-12-24 2015-06-01 한국철도기술연구원 Train-vehicle cooling and heating device
CN108385070A (en) * 2018-04-13 2018-08-10 深圳市华星光电技术有限公司 Prevent plate and sputter equipment
CN110797249B (en) * 2018-08-02 2022-05-27 北京北方华创微电子装备有限公司 Process chamber and semiconductor processing equipment
CN111383881B (en) * 2018-12-27 2023-03-07 中微半导体设备(上海)股份有限公司 Capacitive coupling plasma processor and temperature adjusting method thereof
TWI728774B (en) * 2020-04-09 2021-05-21 健鼎科技股份有限公司 Method of fabricating circuit board structure
TWI825711B (en) * 2021-06-25 2023-12-11 美商得昇科技股份有限公司 Plasma processing apparatus

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US4518848A (en) * 1981-05-15 1985-05-21 Gca Corporation Apparatus for baking resist on semiconductor wafers
US6302996B1 (en) * 1999-07-22 2001-10-16 Metso Paper, Inc. Method and apparatus for washing fiber pulp mixture
US20030213434A1 (en) * 2002-05-17 2003-11-20 Applied Materials, Inc. Upper chamber for high density plasma CVD

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Also Published As

Publication number Publication date
JP2008505492A (en) 2008-02-21
TW200605135A (en) 2006-02-01
US20060000551A1 (en) 2006-01-05
KR20070037500A (en) 2007-04-04
WO2006012021A2 (en) 2006-02-02
CN101001975A (en) 2007-07-18

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