CN101001975A - Methods and apparatus for optimal temperature control in a plasma processing system - Google Patents
Methods and apparatus for optimal temperature control in a plasma processing system Download PDFInfo
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- CN101001975A CN101001975A CNA2005800270885A CN200580027088A CN101001975A CN 101001975 A CN101001975 A CN 101001975A CN A2005800270885 A CNA2005800270885 A CN A2005800270885A CN 200580027088 A CN200580027088 A CN 200580027088A CN 101001975 A CN101001975 A CN 101001975A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25B—REFRIGERATION MACHINES, PLANTS OR SYSTEMS; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS
- F25B29/00—Combined heating and refrigeration systems, e.g. operating alternately or simultaneously
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D1/00—Heat-exchange apparatus having stationary conduit assemblies for one heat-exchange medium only, the media being in contact with different sides of the conduit wall, in which the other heat-exchange medium is a large body of fluid, e.g. domestic or motor car radiators
- F28D1/06—Heat-exchange apparatus having stationary conduit assemblies for one heat-exchange medium only, the media being in contact with different sides of the conduit wall, in which the other heat-exchange medium is a large body of fluid, e.g. domestic or motor car radiators with the heat-exchange conduits forming part of, or being attached to, the tank containing the body of fluid
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
- F28D2021/0019—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for
- F28D2021/0077—Other heat exchangers for particular applications; Heat exchange systems not otherwise provided for for tempering, e.g. with cooling or heating circuits for temperature control of elements
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
- F28F2013/005—Thermal joints
- F28F2013/006—Heat conductive materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Abstract
A temperature control device for controlling temperature of an upper chamber of a plasma processing apparatus is described. The temperature control device includes a thermally conductive body having an inner surface and an outer surface removably connected with and in thermal communication with the upper chamber of the plasma processing apparatus. The temperature control device also includes a plurality of thermal interface layers in thermal communication with the thermally conductive body wherein at least one layer is a heating element; and a cooling element connected with the banded thermally conductive body and thermally coupled with the upper chamber of the plasma processing apparatus wherein the cooling element is configured to conduct a fluidic medium. The temperature control device further includes at least one temperature sensor for sensing temperature of the upper chamber of the plasma processing apparatus; a temperature control unit for controlling the heating element and the cooling element; and a latching mechanism for securing the temperature control device to the upper chamber.
Description
Background technology
The present invention relates to the manufacturing of semiconductor integrated circuit, more specifically, relate to the temperature control of plasma process system.
(for example, unicircuit or flat-panel monitor in) the manufacturing, multilayer material alternately can be deposited to substrate surface and at the device of based semiconductor from this multilayer material of substrate surface etching.In manufacturing processed, layers of material (for example, boron phosphorus silicate glass (BPSG), polysilicon, metal etc.) is deposited on the substrate.Can pass through known technology (for example, photolithography) one patterned settled layer., can etch away part settled layer, to form various parts (feature) (for example, interconnection line, through hole, groove etc.) thereafter.
Understand as those skilled in the art, under the situation such as the semiconductor processes of etch process, must strict control treatment chamber interior quantity of parameters is to keep high-quality result.Temperature is a kind of such parameter.Because the temperature fluctuation of the assembly in etching quality (with the device performance of the based semiconductor that generates) the possibility article on plasma body treatment system is extremely sensitive, therefore need accurate control.And, because part dimension becomes more and more littler, therefore for providing needs constantly to increase, so that the semiconductor device unanimity and accurate the manufacturing to be provided with better temperature controlled apparatus for processing plasma.
Figure 1A is the synoptic diagram that comprises the prior art plasma processing chamber of upper mass and bottom piece.Upper mass (going up the chamber) is held the element such as radio-frequency coil, quartz window and gas inlet usually.On the other hand, bottom piece (following chamber) is held the element such as electrostatic chuck (chuck), substrate and gas-freeing system usually.
Especially, Figure 1A is at Bailey, the exemplary embodiments of describing in No. the 6th, 104,966, the United States Patent (USP) of III et al., and it is hereby expressly incorporated by reference.Figure 1A is the sectional view of the prior art of apparatus for processing plasma 100.Apparatus for processing plasma 100 comprises the heating and cooling plate 104 that is thermally coupled to plasma processing chamber 132.Plasma processing chamber 132 has substrate fixed mechanism 126, is used for support substrates 122 during manufacture.
As an example, substrate fixed mechanism 126 can be electrostatic chuck (ESC).Come the surface of etch substrate 122 by the suitable Cement Composite Treated by Plasma source gas that is discharged in the treatment chamber 132.Can discharge plasma source gas will by the various mechanisms that comprise shower nozzle (showerhead) or gas distribution plate.Evacuated panel 116 keeps sealing to contact with the locular wall 118 of plasma processing chamber 132.The coil 134 that is arranged on the evacuated panel 116 can be coupled to radio frequency (RF) power supply (not shown), and is used for generating plasma body from the plasma source gas will that is discharged into plasma processing chamber 132.During etch processes, also often use RF power supply (not shown) to provide radio frequency as substrate fixed mechanism 126.Also comprise pump 130, handle gas and gaseous product from plasma processing chamber 132, to extract out by pipeline 136.
Be positioned at the temperature that the combined heated at equipment top and cooling plate 104 are used to control the evacuated panel 116 of apparatus for processing plasma 100, thereby can make the internal surface of the evacuated panel 116 that is exposed to plasma body during operation remain on controlled temperature.Heating and cooling plate 104 can use the several physical layers that are included in wherein to constitute, so that the heating and cooling operation to be provided.More specifically, heating and cooling plate 104 comprises the hot packing ring 138 that makes heating and cooling plate 104 and evacuated panel 116 thermal couplings.
Yet most of top piece designs are that the processing property to inside, chamber self is optimized, and other factors such as general thermal characteristics are not optimized.In history,, therefore do not have power it to be redesigned, thereby obtain littler thermal mass with more a spot of material because the manufacturing cost of upper mass is the less relatively part of total system cost.Subsequently, the thermal mass that upper mass is bigger tends to hinder temperature regulation fast, reaches desired temperatures in order to make system, often needs quite long wait at interval, reaches 15 minutes or longer in some cases.In addition, in case detect thermal migration, because the thermal inertia of material, so steady heat skew apace usually.
Common plasma chamber design comprises the aluminium that shows high heat conductance.Figure 1B is the synoptic diagram of the prior art apparatus for processing plasma 150 of the last chamber 176 of a part with big thermal mass.Apparatus for processing plasma 150 comprises heating or the cooling piece 158 that is thermally coupled to big thermal mass 162, and big thermal mass 162 is thermally coupled to chamber 176 again.Chamber 176 is gone up in evacuated panel 154 sealings.Edge or flexible partition 172 will go up chamber 176 and separate with following chamber 180.Partly owing to its quality, big thermal mass 162 shows the advantage of rectification (leveling) thermal perturbation during substrate processing.
In addition, because many temperature controlling systems often will comprise that the heating and cooling part of plastics and stainless material directly is integrated in the cell structure itself, therefore preventative maintenance will become a problem.Plastics and stainless existence often limit the type of available cleaning technique, thereby have limited the effect of preventive maintenance.That is to say that although specific cleaning chemical preparations can clean the residue on the locular wall effectively, same chemical preparations in fact also may destroy plastic material or stainless steel.
In view of noted earlier, need a kind of method and apparatus that is used for the control of plasma process system optimum temps.
Summary of the invention
In one embodiment, the present invention relates to a kind of temperature-control device that is used for chambers temp on plasma process system control apparatus for processing plasma.Temperature-control device comprises: heat conductor has and the removable internal surface and the outside surface of thermal communication with it of being connected also in the last chamber of apparatus for processing plasma.Temperature-control device comprises also and a plurality of hot interfacial layer of heat conductor thermal communication that wherein one deck is a heating member at least; And cooling piece, be connected with banded heat conductor and with the last chamber thermal coupling of apparatus for processing plasma, wherein cooling piece is used for the conducting fluid medium.Temperature-control device also comprises at least one temperature sensor, is used for the last chambers temp of sensing plasma treatment facility; Temperature control unit is used to control heating member and cooling piece; And lockout mechanism, be used for temperature-control device firmly is connected to the chamber.
In another embodiment, the present invention relates to a kind of in plasma process system, use the temperature-control device comprise lockout mechanism control apparatus for processing plasma on the method for chambers temp.This method comprises: combined heated and cooling zone are provided, and wherein, the cooling segment of band is used to conduct the fluid stream (fluidic flow) with steady temperature.This method also comprises in response to last indoor temperature variation, regulates fluid flow rate; And, regulate the heat output of heating member in response to last indoor temperature variation.
These and other features of the present invention will be explained in more detail in the detailed description of the present invention below in conjunction with the accompanying drawings.
Description of drawings
By example the present invention is shown in the accompanying drawings, rather than in order to limit the present invention, among the figure, identical label is represented components identical, wherein:
Figure 1A-1B is the synoptic diagram of prior art plasma processing chamber;
Fig. 2 is the diagram with respect to the sampled data of the temperature of time of expression classicalpiston treatment chamber;
Fig. 3 A to Fig. 3 C is the exemplary cross sectional view of the embodiment of the invention;
Fig. 4 is the exemplary top view of the embodiment of the invention;
Fig. 5 is an example process flow diagram of utilizing the embodiment of the invention; And
Fig. 6 A to Fig. 6 C utilizes each embodiment of the present invention to control the example process flow diagram of temperature in the plasma processing chamber.
Embodiment
Now, describe the present invention in detail with reference to preferred embodiments more of the present invention illustrated in the accompanying drawings.In the following description, in order to provide, many details have been set forth to thorough of the present invention.Yet, obviously, to those skilled in the art, there are not some or all in these details, also can realize the present invention.In other example, do not describe well-known treatment step and/or structure in detail, in order to avoid unnecessarily make the present invention unclear.
Though do not wish to be bound by theory, here, the contriver believes that the sensitive temperature management system can realize the precise temp control in the plasma process system basically.
In one embodiment, temperature management system and method can be moved to realize the optimum temps control of chamber on the apparatus for processing plasma during the manufacturing of semiconductor device.The optimum temps Controlling System of the present invention's expectation provides better process control for apparatus for processing plasma, and along with part dimension continues to dwindle, it is more and more important that process control is just becoming.And the present invention provides the quick response temperature control of plasma process system in unconspicuous mode.
In another embodiment, temperature controlling system comprises the heating and cooling unit, and it is coupled to the outside surface of temperature with chamber on the controlled apparatus for processing plasma.The heating and cooling unit is used for by identical hot interface (thermal interface), and heat is delivered to controlled surface or takes away heat from controlled surface.
In another embodiment, temperature controlling system comprises the heating and cooling unit, and it is coupled to the outside surface of temperature with chamber on the controlled apparatus for processing plasma by lockout mechanism.
In another embodiment, lockout mechanism is a clamp assembly.
In another embodiment, clamp assembly directly is integrated in the heating and cooling unit.
Below discuss other embodiment of the present invention.Yet those skilled in the art should be readily appreciated that because the present invention expands to outside these limited embodiment, therefore the detailed description with respect to these accompanying drawings that provides is the purpose that is used to explain herein.In addition, those skilled in the art should be readily appreciated that diagrammatic sketch is not necessarily drawn in proportion, but is used for the attached description embodiments herein that helps.
Fig. 2 is the diagram 200 with respect to the sampled data of the temperature of time that is illustrated in the example plasma processing chamber.In this example, illustrate with graphic form and neither utilize heating member also not utilize cooling piece to come the temperature of operate plasma treatment chamber.The trend that the curve representation temperature of describing rose along with the time.Locate to stop although the chart that illustrates is lower than 90 ℃ in temperature, can expect, temperature will continue along with the time rises, up to owing to the overheated mechanical fault that causes of appearance.Thermal spike (spike) (for example, 204) and the temperature valley (dip) (for example, 208) of Cement Composite Treated by Plasma cycle period are depicted together.
The point that thermal spike ordinary representation plasma body extinguishes herein.That is, because plasma body discharges heat energy, so the temperature rising, extinguish up to plasma body.It will be appreciated by those skilled in the art that therefore after plasma body extinguished, temperature can continue for some time of rising owing to the heat history in treatment chamber and owing to use big thermal mass when constructing treatment chamber.When plasma body extinguished, along with heat is dispersed in the atmosphere, temperature continued to descend.The temperature valley is illustrated in the point of lighting plasma body herein.As mentioned above, partly because thermal mass time of lag may occur in some systems.Be illustrated in the remarkable decline of temperature shown in 210 (time approximates 70 minutes) and temperature occur during the idle condition of plasma processing chamber and descend.
Fig. 3 A-3C is the exemplary sectional view of the embodiment of the invention.Particularly, Fig. 3 A is the simplified cross-sectional view of the last chamber 300 of apparatus for processing plasma in one embodiment of the invention.Go up chamber 300 by vacuum tight lid or plate 304 sealings, make itself and isolated from atmosphere.Lid 304 can be attached to chamber sidewall 312 movably, to generate vacuum-tight seal.It will be appreciated by those skilled in the art that the selection of material for structure sidewall 312 is based on many factors, these factors for example comprise, thermal conductivity, reactivity, rigidity and cost.
Typically, can use aluminium to construct sidewall, sidewall can be configured to have the single plane of circular contour, perhaps can be configured to have two or more planar multiple planes.Temperature-control device 308 is connected with sidewall 312 and carries out thermal communication with sidewall 312.Below, at Fig. 3 B-3C temperature-control device 308 is described in more detail.316 pairs at protection edge is gone up chamber 300 some protections is provided, to avoid the influence of following treatment chamber 324.As the skilled personnel can understand, can utilize in various types of protections edge any one.At last, last chamber 300 is supported by process chamber sidewalls 320.
Fig. 3 B is the amplification of the example apparatus part shown in Fig. 3 A and simplifies diagrammatic sketch.As mentioned above, temperature-control device 308 can be connected with last chamber sidewall 312 and carry out thermal communication with it.The heat conductor 334 that carries out thermal communication with last chamber sidewall 312 is used for the parts of support temperature control device 308.Cooling groove 338 is formed in the heat conductor 334 to hold psychrophore 326.Cooling groove 338 is the single circuitous grooves with path of self doubling, with the heat load on the average heat conductor 334.By this way, can reduce the bending (warping) of heat conductor 334.Psychrophore 326 carrying fluid mediums, this medium is selected and is used for heat energy is conducted effectively from last chamber 300.Can use the cooling fluid of any amount according to the present invention.In one embodiment, water is used as fluid medium.Psychrophore 326 can be attached to heat conductor 334 with in a plurality of manner known in the art any.In some need more effectively refrigerative embodiment, can use thermally conductive material that psychrophore 326 is fixed in the cooling channel 338 such as polymer resin.In Fig. 3 C, further show a plurality of hot interfacial layer by 330 expressions.
Fig. 3 C is the amplification view of the part of the example apparatus shown in Fig. 3 B.Particularly, Fig. 3 C illustrates in greater detail the example of hot interfacial layer 330 (Fig. 3 B).In one embodiment of the invention, thermally conductive material 344 comprises hot interfacial layer.Thermally conductive material 344 can be used for improving between the surface metal of (in this example, for last chamber sidewall 312 and dissipation with between 348) and contacting of metal.As understood by the skilled person in the art, depend on mechanical connection between these two parts at least in part in the quality of the thermal conductivity between two parts.
In many cases, the physical deformation that may have the mechanical connection defective that for example causes, manufacturing defect or cause owing to bending or mishandle owing to material error.Therefore, need to solve the boundary material that these differences are guaranteed effective heat conduction.By this way, can be perpendicular to the vector transferred heat load effectively of interfacial layer.In one embodiment, thermally conductive material 344 is heating pads.In another embodiment, thermally conductive material 344 is hot lubricating oil.Dissipation with 348 comprise a plurality of physical interface layers another the layer.Be not bound by theory, will be understood that, dissipate and be with 348 to be used for heat load is distributed to heat conductor 334 surfaces equably.The dissipation of the heat load by the band that dissipates is that with the conduction difference of heat load by thermally conductive material dissipating is with respect to the radiation of interfacial layer surface basically, and conduction is to be substantially perpendicular to the interfacial layer surface.Can from many suitable heat sink materials well known to those skilled in the art, select any as the dissipation carrying material.In one embodiment, heat-radiation belt 348 is 6000 series aluminum.
Thermofin 352 comprises another layer of a plurality of hot interfacial layers.Be not bound by theory, thermofin 354 can be used as selected so that the scatterer that fluid medium efficient is lower (heat sink).It should be appreciated by those skilled in the art that the equilibrated thermal load is an ideal in arbitrary hot system.In an embodiment that fluid medium is provided with not controlled flow rate, the efficient of fluid medium may surpass the thermal output of process.In this example, Pei Zhi equipment may never reach the service temperature of expectation by this way, perhaps may only just arrive the suboptimum service temperature when from heater layer (for example, heater layer 350) input excessive power, the result causes the equal increase of production cost.In other examples, fluidic flows and may experience disturbance during handling, for example, and the temperature difference or current difference.In those examples, thermofin 352 can reduce the disturbing influence to treatment temp by as the heat buffering to disturbing influence.In one embodiment, thermofin is can be from the mylar polycarbonate (Mylar Polycarbonate) of various manufacturerss acquisition.
Final layer (not shown) can be attached to the outside surface of heat conductor 334.In certain embodiments, this final layer is heat-resistor (thermal arrestor).Heat-resistor can change isolation with heat control device and surrounding temperature, thereby produces better device process control.Can use any heat-conductive bonding agent well-known in the art make argumentation the layer in each the layer be bonded to each other.In certain embodiments, can use such as two-sided hot sticky crossed belt from the THERMATTACHT_T412 of Chomerics.It will be appreciated by those skilled in the art that illustrate the layer do not represent in the ratio of practical embodiments.Yet layer only is used for the purpose of example.Material selection and design limit are with the designated layer size.
With reference to Fig. 4, according to one embodiment of present invention, the exemplary top view that shows temperature-control device 308 is represented.This embodiment of the present invention is characterised in that its rounded section.Be appreciated that the present invention can also comprise other cross section profiles without restriction.Mounting blocks 432 can be connected to each end of heat conductor 334.Mounting blocks 432 can be used for multiple function.At first, mounting blocks 432 can be used as the tie point of clamping system 428, temperature-control device 308 is fixed to the last chamber of apparatus for processing plasma.Can use the arbitrary mode that is known in the art to realize clamping.
In one embodiment, clamp assembly can integrate with temperature-control device, thereby the screw of the band (band) that can use screwdriver, tubular key, nut driver to be rotatably coupled to have sawtooth is to be fixed to plasma processing chamber with temperature-control device.When rotary screw, screw thread is pushed ahead serration, and the internal diameter of band is reduced.
In another embodiment, movably anchor clamps can integrate with temperature-control device, thereby can adopt a pair of pliers or speciality tool that temperature-control device is fixed to plasma processing chamber.When pressure being applied to from protuberance (tab) that anchor clamps are stretched, the internal diameter of the anchor clamps that are made of elastic deformable material increases usually.Remove pressure and make the internal diameter of anchor clamps reduce, thereby pressure is applied to insertion flexible pipe wherein.
In another embodiment, clamp assembly can integrate with temperature-control device, thereby adopts first anchor clamps, lower clamp half, the hinge pin that connects these two halves and fastening piece that temperature-control device is fixed to plasma processing chamber.Fastening piece can comprise by being installed in the bolt that rotatable pivot pin had in the lower clamp half.Can in first anchor clamps and lower clamp half, groove be set, make bolt can screw in and screw out engage (engagement) with half anchor clamps, to allow assembly to be open for mounting pipe, make it close and pin guaranteeing and be held in the clamp assembly then by tighting a bolt.
Be applied to the position that the pressure on the device must be enough to keep temperature-control device 308, but can not be excessive and cause temperature-control device 308 and dependency structure thereof to damage or distortion.When selecting clamping means, contact pressure is evenly and repeatably when wishing temperature-control device 308 is installed.
Secondly, mounting blocks 432 can be with the attachment point that acts on psychrophore 420/424.420 and outlets 424 of at least one inlet can be installed on each mounting blocks 432.The suitable device of knowing in any amount this area can be with the attachment point that acts on psychrophore.
Handle 416 is set to help service temperature control device 308.Handle 416 can be isolated with temperature-control device 308 heat, thus reduce or the elimination system in thermonoise.Without departing from the invention, can add other handle as required.Show temperature-sensing device at 404 places.Temperature-sensing device 404 is used in interlocking (interlock) controlling plasma system under temperature of superheat (over-temperature) condition.In one embodiment, resistance temperature detector (RTD) can be used for sensing temperature.Well heater adheres to a little 408 and is connected with heat conductor 334.Well heater tie point 408 provides de-stressing for heater layer 350 (Fig. 3 C), and leads to the well heater that is embedded in the temperature-control device 308 easily.Ideally, well heater adheres to a little 408 and isolates with temperature-control device 308 heat, so that not with in the thermonoise drawing-in system.
Fig. 5 is an example process flow diagram of utilizing the simplification of the embodiment of the invention.In first step 502, the initialize plasma chamber.That is, plasma chamber is cleaned and other aspects are ready to handle.Then, in step 504, the chamber is stabilized to the operating parameters of expectation.As will be appreciated, can according to specific production formula maybe needs the operating parameters of any amount is set.After the chamber is stabilized in step 504, in step 506, substrate is placed in the chamber, and in step 508, the chamber can be stabilized to alternatively the operating parameters of expectation.In case the chamber is stabilized in step 508, then in step 512, handle substrate.The processing substrate can comprise any one in a plurality of plasma operations.That is, can the round-robin mode light and extinguish plasma body, up to the processing that expectation occurs, this processing comprises for example etching and deposition.In treatment step 510, in step 512, regulate the heat load in the chamber.To discuss this step in more detail at Fig. 6 A to Fig. 6 C below.In case handled substrate, then in step 514, method determines whether another substrate is ready for processing.Under the ready situation of another substrate, handle and continue step 506.When having finished whole substrates, method finishes.
Fig. 6 A to Fig. 6 C is an example process flow diagram of controlling temperature in the plasma processing chamber that utilizes the embodiment of the invention.As the above mentioned, at least three kinds of different temperature-controlled process have been designed by disclosed the present invention.To discuss these diverse ways in order.
Temperature control: constant fluid stream/variable heat
Fig. 6 A is the example process flow diagram of one embodiment of the invention.Particularly, to show the control flow of fluid medium be that constant and heat are the methods of variable temperature-control device to Fig. 6 A.More specifically, Fig. 6 A has described the step 510 of Fig. 5 in more detail.In first step 602, the temperature of chamber in the detection.Can use in the various temperature sensing apparatus known in the art any one to come detected temperatures.In case read temperature, then in step 604, its operating parameters with the expectation of being selected by the user is compared, thereby whether the inquiry temperature be too low.If temperature too low (for example, temperature is lower than the setting point of expectation) then activates heating member in step 606.In general, heating member or be switched on or switched off.That is, the thermal output of heating member is a constant.
In certain embodiments, can regulate thermal output by power limited circuit (not shown).In step 614, whether method inquiry process is finished.If process is finished, then method continues performing step 514 (Fig. 5).If process is not finished, then method continuation performing step 602 reads chambers temp and continues circulation, up to finishing dealing with.
If in step 604, method determines that temperature is not too low (for example, temperature is higher than setting point), and then in step 608, whether method inquiry heating member is connected.If heating member connection and temperature are on the setting point of expectation, then answer is yes in the inquiry of step 608, and in step 610, disconnect heating member.In step 614, whether method inquiry process is finished.If process is finished, then method continues performing step 514 (Fig. 5).If process is not finished, then method turns back to step 602 and reads chambers temp, and continues circulation, up to finishing dealing with.
If the answer is in the negative in the inquiry of step 608, then in step 612, whether method inquiry overheated condition exists.If whether the answer of step 612 (that is, does not exist overheated condition), then whether method inquiry process is finished in step 614.If process is finished, then method stops.If process is not finished, then method continues performing step 602 and continues circulation, finishes up to process.If there is overheated condition in step 612, then method stops.It should be noted that as step 614 shown, each the circulation all need the inquiry whether finish with deterministic process.
Temperature control: convertible fluids stream/constant heat
Fig. 6 B is the example process flow diagram of one embodiment of the invention.Particularly, to show the control flow of fluid medium be variable and thermal output is the method for constant temp control device to Fig. 6 B.More specifically, Fig. 6 B has described the step 510 of Fig. 5 in more detail.In first step 622, chambers temp in the detection.Can use in the various temperature sensing apparatus known in the art any one to come detected temperatures.In case in step 622, read temperature, then in step 624, its operating parameters with the expectation of being selected by the user is compared, thereby whether the temperature that inquiry is read be too low.If the temperature that is read too low (for example, temperature is lower than the setting point of expectation) then in step 626, can reduce to the flow of fluid medium of temperature-control device.In step 632, whether method inquiry process is finished.If process is finished, then method continues performing step 514 (Fig. 5).If process is not finished, then method is returned step 622 to read chambers temp and to continue circulation, up to finishing dealing with.
If in step 624, method determines that temperature is not too low, and then in step 628, whether method inquiry overheated condition exists.If overheated condition does not exist, then in step 630, can increase flow of fluid medium.In step 632, whether method inquiry process is finished.If process is finished, then method continues performing step 514 (Fig. 5).If process is not finished, then method is returned step 622 to read chambers temp and to continue circulation, up to finishing dealing with.If in step 628, overheated condition exists, and then method stops.It should be noted that shown in step 632 each circulation all needs inquiry whether to finish with deterministic process.
Temperature control: convertible fluids stream/variable heat
Fig. 6 C is the example process flow diagram of one embodiment of the invention.Particularly, to show the control flow of fluid medium be variable to Fig. 6 C and thermal output is the method for variable temperature-control device.More specifically, Fig. 6 C has described the step 510 of Fig. 5 in more detail.In first step 642, chambers temp in the detection.Can use in the various temperature sensing apparatus known in the art any one to come detected temperatures.In case read temperature, then in step 644, its operating parameters with the expectation of being selected by the user is compared, thereby whether the inquiry temperature be too low.If find that the last chambers temp read is too low, then can start in following three actions one in step 646, promptly a), the activation heating member; B) reduce flow of fluid medium; Or c) activates heating member and reduce flow of fluid medium.
Determining to activate which key element (element) in response to cold condition can be determined by the user, and can be depending on for example various conditions of the response speed (that is system sensitivity) of implementation cost, Resource Availability or expectation.Therefore, can not obtain extra fluid stream or can not cost-effective situation under, the user can select the heating member response.In a similar manner, the additional energy that can not obtain to be used to activate heating member or can not cost-effective situation under, the user can select to reduce the flow of fluid medium response.On the contrary, in needs maximum system susceptibility and not under limit usability and the condition of cost, two key elements (for example, the flow of fluid medium of activated heating member, minimizing) can start.In step 652, whether method inquiry process is finished.If process is finished, then method continues performing step 514 (Fig. 5).If process is not finished, then method is returned step 642 to read chambers temp and to continue circulation, up to finishing dealing with.
If in step 644, method determines that temperature is not too low, and then in step 648, whether method inquiry overheated condition exists.If overheated condition does not exist, then the method performing step 650, wherein, activate in following three conditions: a) do not activate heating member; B) increase flow of fluid medium; Or c) do not activate heating member and increase flow of fluid medium.As mentioned above, determine to activate which key element in response to hot conditions and can determine, and can be depending on for example various conditions of the response speed (that is system sensitivity) of implementation cost, Resource Availability or expectation by the user.Therefore, be under the infeasible or not cost-effective situation at the fluid stream that increases, the user can select the heating member response.
In a similar manner, selecting under the infeasible or not cost-effective situation of heating member response, the user can select to increase the flow of fluid medium response.On the contrary, in needs maximum system susceptibility and not under limit usability and the condition of cost, two key elements (for example, the element of heating turn-off, increase flow of fluid medium) can be activated.In step 652, whether method inquiry process is finished.If process is finished, then method continues performing step 514 (Fig. 5).If process is not finished, then method is returned step 642 to read temperature and to continue circulation, up to finishing dealing with.If in step 648, detect overheated condition, then method stops.
As shown in literary composition, the present invention provides a kind of sensitive temperature control for plasma process system.In addition, the present invention is partly owing to it effectively designs the benefit that human engineering is provided.
Although described the present invention, there are the change fall in the scope of the invention, conversion, modification and variously are equal to replacement according to a plurality of preferred embodiments.For example, by Fremont, the TCP 2300 Cement Composite Treated by Plasma type systems that the Lam research company of CA makes can be used for implementing the present invention.
Shall also be noted that the optional method that still has many realizations method and apparatus of the present invention.Therefore following claims are construed as and comprise this change that all falls within connotation of the present invention and the scope, conversion, modification and variously be equal to replacement.
Claims (21)
1. temperature-control device that is used to control the last chambers temp of apparatus for processing plasma comprises:
Heat conductor, have with described apparatus for processing plasma described go up the chamber removable be connected and with the internal surface and the outside surface of the last chamber thermal communication of described apparatus for processing plasma;
A plurality of hot interfacial layers, with described heat conductor thermal communication, wherein, one deck is a heating member at least;
Cooling piece is connected with zonal described heat conductor and goes up the chamber thermal coupling with described apparatus for processing plasma described, and wherein, described cooling piece is configured to the conducting fluid medium;
At least one temperature sensor is used for the described temperature that goes up the chamber of the described apparatus for processing plasma of sensing;
Temperature control unit is used to control described heating member and described cooling piece; And
Lockout mechanism is used for described temperature-control device is fixed to the described chamber of going up.
2. temperature-control device according to claim 1, wherein, described heat conductor is an aluminium.
3. temperature-control device according to claim 1, wherein, described heating member is the etched paper tinsel well heater of polyimide.
4. temperature-control device according to claim 1, wherein, the innermost layer of described a plurality of hot interfacial layers is thermo-contact materials, thereby strengthens heat passage.
5. temperature-control device according to claim 1, wherein, one deck at least of described a plurality of hot interfacial layers is a scatterer, and heat radiation ground is dispersed.
6. temperature-control device according to claim 1, wherein, one deck at least of described a plurality of hot interfacial layers is a thermofin.
7. temperature-control device according to claim 1 also comprises heat-resistor, makes described temperature-control device avoid the influence of envrionment conditions.
8. temperature-control device according to claim 1, wherein, described cooling piece is configured to receive the fluid medium of constant volume flow, and wherein, described heating member is configured to turn round in response to described indoor temperature variation.
9. temperature-control device according to claim 1, wherein, described cooling piece is configured to allow the volumetric flow rate that indoor temperature variation is adjusted fluid medium in response to described, and wherein, described heating member is configured to be used for the constant thermal output.
10. temperature-control device according to claim 1, wherein, described cooling piece is configured to allow the volumetric flow rate that indoor temperature variation is adjusted fluid medium in response to described, and wherein, described heating member is configured to turn round in response to described indoor temperature variation.
11. the last chamber of the temperature sensitive of a plasma apparatus comprises:
The successive sidewall;
Combined heated and cooling zone, with described successive sidewall thermal communication, described heating and cooling band comprises heating member and cooling piece, wherein, the described cooling piece of described band is configured to the conducting fluid medium;
At least one temperature sensor is with the described upward chamber thermal coupling of described apparatus for processing plasma; And
The thermal conditioning control unit is used to control described heating member and described cooling piece.
12. the last chamber of the heat-sensing of plasma apparatus according to claim 11, wherein, described combined heated and cooling zone also comprise a plurality of hot interfacial layers.
13. the last chamber of the heat-sensing of plasma apparatus according to claim 12, wherein, one deck at least of described a plurality of hot interfacial layers is a heating member.
14. the last chamber of the heat-sensing of plasma apparatus according to claim 13, wherein, described heating member is the etched paper tinsel well heater of polyimide.
15. the last chamber of the heat-sensing of plasma apparatus according to claim 14, wherein, described cooling piece is configured to receive the fluid medium of constant volume flow, and wherein, described heating member is configured to turn round in response to described indoor temperature variation.
16. the last chamber of the heat-sensing of plasma apparatus according to claim 11, wherein, described cooling piece is configured to allow the described volumetric flow rate that indoor temperature variation is adjusted fluid medium in response to described, and wherein, described heating member is configured to be used for the constant thermal output.
17. the last chamber of the heat-sensing of plasma apparatus according to claim 11, wherein, described cooling piece is configured to allow to adjust in response to described indoor temperature variation the described volumetric flow rate of fluid medium, and wherein, described heating member is configured to turn round in response to described indoor temperature variation.
18. the last chamber of the heat-sensing of plasma apparatus according to claim 15, wherein, described fluid medium is a water.
19. the method for a use temperature control device, described temperature-control device comprises lockout mechanism, and described method is used to control the last chambers temp of apparatus for processing plasma, comprising:
Combined heated and cooling zone are provided, and wherein, the cooling segment of described band is configured to conduct the fluid stream with steady temperature;
In response to described indoor temperature variation, regulate described fluid flow rate; And
In response to described indoor temperature variation, regulate the thermal output of described heating member.
20. the method for use temperature control device according to claim 19, wherein, described fluid flow rate is a constant.
21. the method for use temperature control device according to claim 19, wherein, described thermal output is a constant.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/882,464 US20060000551A1 (en) | 2004-06-30 | 2004-06-30 | Methods and apparatus for optimal temperature control in a plasma processing system |
| US10/882,464 | 2004-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101001975A true CN101001975A (en) | 2007-07-18 |
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|---|---|---|---|
| CNA2005800270885A Pending CN101001975A (en) | 2004-06-30 | 2005-06-14 | Methods and apparatus for optimal temperature control in a plasma processing system |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20060000551A1 (en) |
| JP (1) | JP2008505492A (en) |
| KR (1) | KR20070037500A (en) |
| CN (1) | CN101001975A (en) |
| TW (1) | TW200605135A (en) |
| WO (1) | WO2006012021A2 (en) |
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| CN102172105A (en) * | 2008-09-03 | 2011-08-31 | 冲野晃俊 | Plasma temperature control apparatus and plasma temperature control method |
| CN103907395A (en) * | 2011-08-30 | 2014-07-02 | 沃特洛电气制造公司 | High definition heater system having fluid medium |
| CN104885026A (en) * | 2012-12-25 | 2015-09-02 | 科理克株式会社 | Temperature control device |
| CN108385070A (en) * | 2018-04-13 | 2018-08-10 | 深圳市华星光电技术有限公司 | Prevent plate and sputter equipment |
| CN110797249A (en) * | 2018-08-02 | 2020-02-14 | 北京北方华创微电子装备有限公司 | Process chamber and semiconductor processing equipment |
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| TWI728774B (en) * | 2020-04-09 | 2021-05-21 | 健鼎科技股份有限公司 | Method of fabricating circuit board structure |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20070037500A (en) | 2007-04-04 |
| US20060000551A1 (en) | 2006-01-05 |
| JP2008505492A (en) | 2008-02-21 |
| WO2006012021A2 (en) | 2006-02-02 |
| WO2006012021A3 (en) | 2006-09-28 |
| TW200605135A (en) | 2006-02-01 |
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