CN100592181C - 一种可修复的像素结构 - Google Patents

一种可修复的像素结构 Download PDF

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CN100592181C
CN100592181C CN200710099778A CN200710099778A CN100592181C CN 100592181 C CN100592181 C CN 100592181C CN 200710099778 A CN200710099778 A CN 200710099778A CN 200710099778 A CN200710099778 A CN 200710099778A CN 100592181 C CN100592181 C CN 100592181C
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tft
electrode
standby
source electrode
film transistor
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CN101315505A (zh
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赵继刚
金基用
徐宇博
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BOE Technology Group Co Ltd
Gaochuang Suzhou Electronics Co Ltd
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Beijing BOE Optoelectronics Technology Co Ltd
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Priority to US12/061,415 priority patent/US20080296582A1/en
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    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
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    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136268—Switch defects

Abstract

本发明公开了一种可修复的像素结构，包括：栅线和数据线，栅线和数据线交叉定义一个像素单元，每一像素单元包括：薄膜晶体管器件和透明像素电极，薄膜晶体管的沟道旁边形成有备用的源电极、备用的漏电极和备用的沟道。其中备用的源电极为所述薄膜晶体管的源电极或为所述薄膜晶体管的源电极的一部分；备用的漏电极的部分位于像素电极之下；薄膜晶体管的沟道为U型；备用的沟道为一字型。本发明通过TFT旁边上增加备用的TFT，即TFT沟道旁边增加沟道修复部分，在原有的TFT发生缺陷时，启动备用的TFT，从而提高阵列基板的成品率和优等品率，进一步降低成本。

Description

一种可修复的像素结构
技术领域
本发明涉及薄膜晶体管液晶显示器(TFT LCD)的结构，特别涉及TFT LCD一种可修复的像素结构。
背景技术
随着LCD生产的不断扩大，各个生产厂商之间的竞争也日趋激烈。各厂家在不断提高产品性能的同时，也再不断努力降低产品的生产成本，从而提高市场的竞争力。在降低产品成品的方法中，减少工艺数量，主要是减少光刻次数，从而提高生产速度、降低成本是目前各厂商普遍努力的主要方向。在近几年中，通过工程师们的努力，TFT LCD制造工艺中的光刻工艺数量不断减少。从最初的7次光刻工艺，到目前普遍使用的5次光刻工艺。掩模版(Mask)制造技术中发展出灰色调掩模版(gray tone mask)技术之后，使进一步减少光刻次数成为可能。目前个别LCD生产厂家已经在使用比较先进的4次光刻工艺(由于制造过程中1次光刻工艺需要采用1次掩模版进行掩模、曝光后刻蚀，故4次光刻又称“4mask”)。通过使用4次光刻工艺技术，生产速度和效率都有了很大的提高。
图1所示为现有技术中4mask工艺完成后的像素结构示意图；图2所示为图1A-A部位的截面图。如图1和图2所示，该像素结构包括：栅线3和数据线5，栅线3和数据线5交叉定义一个像素单元，每一像素单元包括：薄膜晶体管器件，像素电极6，其中薄膜晶体管包括：栅电极31，依次形成在栅电极31上方的栅极绝缘层2、半导体层4、掺杂半导体层7、源电极52，漏电极51，其中漏电极51通过钝化层8的过孔9与像素电极6相连；源电极52与数据线5为一体相连结构，源、漏电极之间为薄膜晶体管的沟道部分。
但是，4mask工艺又存在这其先天的缺陷和不足。由于使用了灰色调掩模版技术，将5mask中的有源层光刻(Active mask)和源、漏电极光刻(SDmask)在同一步光刻中完成，这就造成了工艺容差性较差。同时也使得产品工艺条件变得复杂而难以掌握，特别是在灰色调掩模版(Gray-Tone Mask)的光刻工艺中，参数和条件要求非常苛刻。由于这些原因，造成了4mask技术生产的产品成品率普遍低于传统5mask技术生产的产品。在4mask制造的薄膜晶体管(TFT)阵列基板的诸多不良中，像素TFT的沟道部分(channel)的有源层断路和源、漏电极(SD)短路现象较多出现。这是主要是由于4mask技术的特点所决定的。一般对于这两种不良采用的修理方法是将不良像素的TFT切断，使其成为暗点。这种修理方式使得TFT LCD的良品率下降。
发明内容
本发明的目的是针对现有技术的缺陷，提供一种可修复的像素结构，通过TFT旁边上增加备用的TFT，即TFT沟道旁边增加沟道修复部分，在原有的TFT发生缺陷时，启动备用的TFT，从而提高阵列基板的成品率和优等品率，进一步降低成本。
为了实现上述目的，本发明提供一种可修复的像素结构，包括：栅线和数据线，栅线和数据线交叉定义一个像素单元，每一像素单元包括：薄膜晶体管器件和透明像素电极，其中所述薄膜晶体管的沟道旁边形成有用于在所述沟道发生缺陷时启用的备用的源电极、备用的漏电极和备用的沟道，所述备用的源电极为所述薄膜晶体管的源电极，所述备用的漏电极形成在所述薄膜晶体管的源电极靠近所述透明像素电极的一侧。
上述方案中，所述备用的漏电极的部分位于像素电极之下。所述薄膜晶体管的沟道进一步为U型。所述备用的沟道进一步为一字型。所述备用的源电极和备用的漏电极与所述数据线、所述薄膜晶体管的源电极和漏电极可以为一次光刻工艺中形成的相同材料部分。所述数据线与所述薄膜晶体管的源电极进一步为一体结构。
相对于现有技术，本发明由于在TFT旁边上增加备用的TFT，即通过在使用灰色调掩模版形成源、漏电极和沟道的同时，在TFT沟道旁边形成备用TFT沟道结构，其源极部分与主TFT的源极相连，漏极位于像素电极之下。在LCD进行阵列工艺完成后如果某一像素的TFT部分发生断路或者短路之类的缺陷而无法修复时，在将缺陷沟道断开的同时，使用激光等方法直接连接备用TFT的漏极与像素电极，修复发生不良的像素，从而提高了阵列基板(Array)的成品率和优等品率，进一步降低了成本。
下面结合附图和具体实施例对本发明进行进一步更为详细地说明。
附图说明
图1是现有技术的像素结构示意图；
图2是图1中A-A部位截面图；
图3是本发明的像素结构示意图；
图4是图3中C-C位置的截面图；
图5是本发明使用的灰色调掩模版示意图。
图中标记：1、玻璃基板；2、栅极绝缘层；3、栅线；31、栅电极；4、半导体层；5、数据线；51、漏电极；52、源电极；6、像素电极；7、掺杂半导体层；8、钝化层；9、过孔；11、备用的漏电极；12、沟道部位的半透光部分；22、备用的沟道部位的半透光部分；41、数据线的不透光区域；42、源电极的不透光部分；43、漏电极的不透光部分；44、备用的漏电极的不透光部分。
具体实施方式
本发明的主要思想是在传统的TFT旁边上增加备用的TFT，具体形成是在使用灰色调掩模版形成源、漏电极和沟道的同时，在TFT沟道旁边形成备用的源电极、备用的漏电极和备用的沟道结构，该备用的TFT其源极部分与主TFT的源电极相连或者为其一部分，漏电极部分位于像素电极之下。
下面结合附图详细描述该本发明。
图3所示为本发明的像素结构示意图；图4所示为图3中C-C部位的截面图。如图3和图4所示，本发明的像素结构包括：玻璃基板1、栅线3和数据线5，栅线3和数据线5交叉定义一个像素单元，每一像素单元包括：薄膜晶体管器件，像素电极6，其中薄膜晶体管包括：栅电极31，依次形成在栅电极31上方的栅极绝缘层2、半导体层4、掺杂半导体层7、源电极52，漏电极51，其中漏电极51通过钝化层8的过孔9与像素电极6相连；源电极52与数据线5为一体相连结构。上述各部分同现有技术中的像素结构并无差异，本发明区别于现有技术结构的特征在于：在现有技术源电极52靠近像素电极一侧形成有一备用的漏电极11，备用的漏电极11的部分位于像素电极6的下方，该备用的漏电极11与源电极51之间形成有一备用的导电沟道。
当LCD进行阵列工艺完成后如果某一像素的TFT部分发生断路或者短路之类的缺陷而无法修复时，在将缺陷沟道断开的同时，使用激光等方法直接连接备用的漏电极11与像素电极6，修复发生不良的像素，从而提高了阵列基板(Array)的成品率和优等品率，进一步降低成本，提高产品竞争力。
图5所示为形成该像素结构所采用的灰色调掩模版示意图。如图5所示，该灰色调掩模版主要包括不透光部分、半透光部分和完全透光部分。图5中，半透光区域主要包括形成主薄膜晶体管的沟道部位的半透光部分12；形成备用薄膜晶体管的备用的沟道部位的半透光部分22。不透光区域包括：形成数据线的不透光区域41；形成主薄膜晶体管的源电极的不透光部分42；形成主薄膜晶体管的漏电极的不透光部分43和形成备用薄膜晶体管的备用的漏电极的不透光部分44。采用该灰色调掩模版即可在形成源、漏电极和沟道的同时，在TFT沟道旁边形成备用的漏电极和备用的沟道结构。
最后应说明的是，以上实施例仅用以说明本发明的技术方案而非限制，尽管参照较佳实施例对本发明进行了详细说明，本领域的普通技术人员应当理解，按照需要可使用不同材料和设备实现之，即可以对本发明的技术方案进行修改或者等同替换，而不脱离本发明技术方案的精神和范围。

Claims (6)

1、一种可修复的像素结构，包括：栅线和数据线，栅线和数据线交叉定义一个像素单元，每一像素单元包括：薄膜晶体管器件和透明像素电极，其特征在于：所述薄膜晶体管的沟道旁边形成有用于在所述沟道发生缺陷时启用的备用的源电极、备用的漏电极和备用的沟道，所述备用的源电极为所述薄膜晶体管的源电极，所述备用的漏电极形成在所述薄膜晶体管的源电极靠近所述透明像素电极的一侧。
2、根据权利要求1所述的可修复的像素结构，其特征在于：所述备用的漏电极的部分位于像素电极之下。
3、根据权利要求1所述的可修复的像素结构，其特征在于：所述薄膜晶体管的沟道为U型。
4、根据权利要求3所述的可修复的像素结构，其特征在于：所述备用的沟道为一字型。
5、根据权利要求1至4任一所述的可修复的像素结构，其特征在于：所述备用的源电极和备用的漏电极与所述数据线、所述薄膜晶体管的源电极和漏电极为一次光刻工艺中形成的相同材料部分。
6、根据权利要求5所述的可修复的像素结构，其特征在于：所述数据线与所述薄膜晶体管的源电极为一体结构。
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