CN100560481C - 半导电碳纳米管的分离方法 - Google Patents
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Abstract
本发明提供了一种半导电碳纳米管的分离方法,它包括:将碳纳米管与硝酸和硫酸的混合酸溶液混合,获得碳纳米管分散体;对碳纳米管分散体进行搅拌;对碳纳米管分散体进行过滤;以及加热过滤后的碳纳米管,以除掉官能团。
Description
技术领域
本发明涉及一种单壁碳纳米管(single walled nanotube)的分离(isolating)方法,具体涉及具有特定手征性(chirality)的半导电碳纳米管的分离方法。
背景技术
碳纳米管具有各种形状的各向异性结构,例如单壁形、多壁形、绳索(rope)形,其直径范围从几个纳米到几十个纳米,长度范围从几十微米到几百微米。碳纳米管根据其手征性展现出导电特性或半导电特性。碳纳米管粉末含有半导电碳纳米管和金属性(metallic)碳纳米管的混合物。当碳纳米管为扶手椅形(arm-chair)结构时,它们展现出金属特性,而当它为Z字形结构时,它们展现出半导电特性。半导电碳纳米管是准一维结构,其能隙随直径变化,由此展现出独特的量子效应。
内部中空的碳纳米管机械强度高(大约比钢高100倍)、化学稳定性好,具有很高的导热性。因此,碳纳米管已突出为预期有许多微观和宏观应用的新功能材料。人们进行了大量研究来将碳纳米管用于各种用途,例如用于存储器件、电子放大器、气体传感器、微波防护层、电化学存储单元(二次电池、燃料电池、或超级电容器)中的电极极板、场发射显示器(FED)、以及聚合物的组合物等。
为了进行这些碳纳米管的应用实践,必需获得具有特定手征性的碳纳米管。例如,半导电碳纳米管用于存储器件、传感器等,而金属性碳纳米管用于电池、电磁防护层等的电极材料。因此,需要一种能选择性地制造出具有特定手征性的碳纳米管的方法,或者从混合物中分离出具有特定手征性的碳纳米管的方法。
碳纳米管一般通过化学汽相淀积法(CVD)制造。但是,利用CVD很难选择性地制造出具有理想手征性的碳纳米管。人们提出了利用放电或者激光淀积法来制造具有特定手征性的碳纳米管的方法。但是,这些方法的产量很低。另外,利用激光会增加制造成本,而且也无法实现具有理想特性(导电或半导电)的碳纳米管的最优选择性生长(growth)。
因此,人们对一种新方法进行了研究,在该方法中,先生长出半导电碳纳米管和金属性碳纳米管的混合物,然后除掉不想要类型的碳纳米管。
人们建议了一种利用表面活性剂、十八烷基胺(ODA)的方法。该方法中,在分离出手征性碳纳米管后,还必需除掉碳纳米管中的表面活性剂,由此导致工艺复杂化和产量降低。
人们又提出了一种金属性碳纳米管的分离方法。该方法包括将碳纳米管分散到溶液中、通过电泳让金属性碳纳米管附着到电极。在该方法中,产量较低,难以大量制造出具有特定手征性的金属性碳纳米管。
韩国专利第0377630号公开了一种具有特定手征性的碳纳米管的分离方法。该方法包括:将碳纳米管的两端与电极平行相连,然后在预定温度范围内施加脉冲电压,以除掉具有不理想手征性的碳纳米管。但是,在该方法中,难以平行连接碳纳米管,并且该方法不适合大批量制造理想的碳纳米管。
发明内容
本发明提供了一种通过简易工序大批量分离半导电碳纳米管的方法。
依照本发明的一个方面,提供了一种半导电碳纳米管的分离方法,该方法包括:将碳纳米管与硝酸和硫酸的混合酸溶液混合,获得碳纳米管分散体(dispersion);搅拌碳纳米管分散体;过滤碳纳米管分散体;然后加热经过滤的碳纳米管,以除掉官能团。
附图说明
下面通过参照附图对示范性实施例的详细描述将使本发明的上述和其它特征、优点变得更显而易见,附图中:
图1是表示依照本发明实施例的半导电碳纳米管分离方法的流程图;
图2是表示例1和例2中处理过的各碳纳米管的Raman(喇曼)散射测试结果的曲线图;
图3是表示例1和1中处理过的各碳纳米管的Raman散射测试结果的曲线图。
具体实施方式
下面对本发明进行详细说明。
半导电碳纳米管的分离方法包括:将碳纳米管与硝酸和硫酸的混合酸溶液混合,获得碳纳米管分散体;搅拌碳纳米管分散体;对碳纳米管分散体进行过滤;然后加热经过过滤的碳纳米管,以除去官能团。与传统方法不同的是,该方法能在一个步骤中处理大量碳纳米管粉末样品,并且分离效率很高。
图1是表示依照本发明实施例的半导电碳纳米管分离方法的流程图。
在本发明的实施例中使用的碳纳米管可以是经过纯化的碳纳米管或者粗碳纳米管。碳纳米管可利用任何传统方法制造。例如,可以使用通过放电、激光淀积、汽相合成、等离子体化学汽相淀积或者热化学汽相淀积方法生产的任何粗碳纳米管。
在制备出碳纳米管后,将硝酸和硫酸以适当比例混合,生成混合酸溶液,然后将碳纳米管与混合酸溶液混合,获得碳纳米管分散体(S10)。混合酸溶液中的硫酸与硝酸反应,提高了硝酸根离子(nitronium ion)(NO2 +)的浓度。硝酸根离子是亲电子的,它一般用于将硝基引入苯环中。假设,在它用于碳纳米管时,硝酸根离子用作在碳纳米管的碳原子之间的SP2轨道上存在的电子的亲电子基团。该情况下,与半导电碳纳米管相比,金属性碳纳米管更容易作为电子给体(donor)。于是,金属性碳纳米管中的C-C键被破坏,形成C-N键。最后,由于金属性碳纳米管之间的键断裂,金属性碳纳米管变短。搅拌过程中,硫酸基团插到碳纳米管束之间,加大了纳米管束之间的间隔。硝酸根离子更容易插到分隔更宽的纳米管束之间与碳纳米管反应。
依照本实施例的方法能除去缺陷碳纳米管以及金属性碳纳米管。去除缺陷碳纳米管是因为它的C-C键很弱,它容易被硝酸根离子破坏。
以适当比例选择混合酸溶液中硝酸∶硫酸的体积比,优选为1∶9到2∶8。在该比例条件下,对半导电碳纳米管和金属性碳纳米管的选择性反应最佳,分离效率高。
接着,对碳纳米管分散体进行搅拌(S20)。搅拌可在室温下利用传统搅拌器进行。搅拌时间的范围为1到3小时,这要根据混合酸溶液中硝酸与硫酸的比例而变化。如果搅拌时间超过3小时,就存在半导电碳纳米管也发生反应的风险。另外,搅拌时间可根据未处理碳纳米管的状态而变化。
在金属性碳纳米管因与硝酸根离子的反应而变短或被破坏之后,对碳纳米管分散体进行过滤,获得半导电碳纳米管(S30)。可以使用微孔直径为几微米的过滤器,例如微滤器、超滤器等。在过滤之前或之中可用水对碳纳米管分散体进行稀释。当将分散体倒入微孔直径为几微米的过滤器时,因未参加反应而较长的半导电碳纳米管就会留在过滤器上,而因参加了反应而变短或遭到局部破坏的金属性碳纳米管通过过滤器。
最后,由过滤得到的半导电碳纳米管具有附着其表面的官能团如NO2 +和SO3。于是,要对过滤后的碳纳米管进行加热,以除去这些官能团(S40)。加热温度是600到1000摄氏度。如果加热温度低于600摄氏度,就存在不能除去这些官能团的风险。如果加热温度高于1000摄氏度,这些官能团就会与碳纳米管结合,从而让碳纳米管的特性变差。可在真空或氩气氛中加热过滤后的碳纳米管。必需至少加热30分钟,以确保除掉官能团。
如果本发明中使用的碳纳米管是粗碳纳米管,可在利用微滤器过滤碳纳米管分散体之前进一步利用滤网滤掉杂质,或者在碳纳米管与混合酸溶液混合之前进一步对粗产品进行纯化。为了获得高纯度的半导电碳纳米管,有利的是通过该过滤和纯化过程除掉粗产品中的碳聚集体(cluster)或者催化金属聚集体。
粗碳纳米管的纯化可利用任意一种传统纯化方法进行,例如通过汽相热处理或者酸处理。在酸处理过程中,要将粗碳纳米管浸到含有酸溶液的纯化浴(bath)中1到4小时。硝酸或盐酸等的水溶液可作为酸溶液。酸溶液中的H+离子能去掉粗产品中的碳聚集体和碳粒,而Cl-和NO3 -能去掉其中的催化金属聚集体。然后,将超纯水送入其中装着分散了碳纳米管的混合溶液的纯化浴,让酸溶液从纯化浴溢流出来,以便冲洗(rinse)产品。让冲洗后的产品通过尺寸不超过300μm的金属网过滤器,以去掉碳聚集体、碳粒和催化金属聚集体,并获得经过纯化的碳纳米管。由于该实施例的混合操作中使用了混合酸溶液,因此可同时完成通过酸处理进行的纯化。于是,在不用对要与混合酸溶液混合之前的碳纳米管进行进一步纯化的情况下,在混合操作中使用粗碳纳米管,然后在通过微滤器对半导电碳纳米管进行过滤之前利用滤网将杂质滤掉。如上所述,在利用微滤器过滤碳纳米管之前将杂质滤掉的情况下,可在一个工序中进行滤掉杂质的粗碳纳米管纯化过程和半导电碳纳米管的分离过程,由此提高了效率。
其间,在用于纯化的汽相热处理中,要将碳纳米管置于位于反应炉中央的舟皿(boat)中,然后加热。在酸性纯化气体如氢氯酸气体和硝酸气体等流入反应炉时,由于纯化气体的热分解产生氢离子。这些氢离子能除掉杂质如碳聚集体和其它热分解产物如Cl-或NO3 -,并能除掉催化金属聚集体。
下面,将参照例子详细描述本发明。给出这些例子仅用于说明目的,并不意在对本发明范围的限制。
例1
将纯化后的碳纳米管与体积比为1∶9的硝酸、硫酸混合酸溶液混合,获得碳纳米管分散体。利用搅拌器搅拌分散体3小时。然后,在用纯水混合并稀释的同时通过微滤器对碳纳米管分散体进行过滤。最后,将过滤后的半导电碳纳米管置于真空炉中,于700摄氏度下加热1小时,得到半导电碳纳米管。
例2
除了混合酸溶液中硝酸∶硫酸的体积比为2∶8、搅拌时间为2小时外,按照与例1相同的方式得到半导电碳纳米管。
实验1
通过Raman散射测试和吸收测试测量例1和2中获得的半导电碳纳米管的直径分布和手征性分布。实验结果示于图2和3中。参照图2,在未处理的碳纳米管中可以观察到与金属性碳纳米管相对应的峰,但是在例1和2中获得的碳纳米管内却看不到这样的峰。参照图3,在未处理的碳纳米管中可以看到位于1300cm-1附近的缺陷峰(D带(band)),但这个在例1和2中获得的碳纳米管中却看不到。因此,就能断定,依照本发明实施例的方法能高效地分离出大量半导电碳纳米管,同时还能去除有缺陷的碳纳米管。
如上所述,依照本发明的实施例,能分离出大量高纯度的半导电碳纳米管,于是这也增强了碳纳米管在存储器件、传感器等中的应用。另外,还能同时去除有缺陷的碳纳米管。此外,能在一个工序中一起实施粗碳纳米管的纯化和半导电碳纳米管的分离,于是提高了效率。
虽然参照本发明的示范性实施例具体示出并描述了本发明,但本领域普通技术人员应当理解的是,在不脱离由以下权利要求限定的发明精神和范围的情况下,可以做出形式和细节上的各种变化。
Claims (7)
1.一种半导电碳纳米管的分离方法,它包括:
将碳纳米管与硝酸、硫酸的混合酸溶液混合,获得碳纳米管分散体;
对碳纳米管分散体进行搅拌;
对碳纳米管分散体进行过滤;以及
加热过滤后的碳纳米管,以除掉官能团,
其中过滤后碳纳米管的加热要在600到1000摄氏度的温度下进行;
其中过滤后碳纳米管的加热要在真空或氩气氛中进行。
2.根据权利要求1所述的方法,其中混合酸溶液中硝酸∶硫酸的体积比范围是1∶9到2∶8。
3.根据权利要求1所述的方法,其中搅拌进行1到3小时。
4.根据权利要求1所述的方法,其中利用微滤器或超滤器进行碳纳米管分散体的过滤。
5.根据权利要求1所述的方法,还包括:在搅拌了碳纳米管分散体之后,利用滤网滤掉杂质。
6.根据权利要求1所述的方法,还包括在将碳纳米管与混合酸溶液混合之前,对粗碳纳米管进行纯化。
7.根据权利要求6所述的方法,其中粗碳纳米管通过汽相热处理或酸处理来纯化。
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