CN100540225C - 化学机械抛光垫 - Google Patents

化学机械抛光垫 Download PDF

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Publication number
CN100540225C
CN100540225C CNB2007101092532A CN200710109253A CN100540225C CN 100540225 C CN100540225 C CN 100540225C CN B2007101092532 A CNB2007101092532 A CN B2007101092532A CN 200710109253 A CN200710109253 A CN 200710109253A CN 100540225 C CN100540225 C CN 100540225C
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CN
China
Prior art keywords
polishing
polymer
polymeric matrix
polishing pad
phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CNB2007101092532A
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English (en)
Chinese (zh)
Other versions
CN101077570A (zh
Inventor
M·J·库尔普
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of CN101077570A publication Critical patent/CN101077570A/zh
Application granted granted Critical
Publication of CN100540225C publication Critical patent/CN100540225C/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
    • B24D3/28—Resins or natural or synthetic macromolecular compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component
    • Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
CNB2007101092532A 2006-05-25 2007-05-25 化学机械抛光垫 Active CN100540225C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/442,077 2006-05-25
US11/442,077 US7445847B2 (en) 2006-05-25 2006-05-25 Chemical mechanical polishing pad

Publications (2)

Publication Number Publication Date
CN101077570A CN101077570A (zh) 2007-11-28
CN100540225C true CN100540225C (zh) 2009-09-16

Family

ID=38622487

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2007101092532A Active CN100540225C (zh) 2006-05-25 2007-05-25 化学机械抛光垫

Country Status (7)

Country Link
US (1) US7445847B2 (enExample)
JP (1) JP5346446B2 (enExample)
KR (1) KR101360622B1 (enExample)
CN (1) CN100540225C (enExample)
DE (1) DE102007024459A1 (enExample)
FR (1) FR2901499B1 (enExample)
TW (1) TWI418443B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107107307A (zh) * 2015-03-30 2017-08-29 霓达哈斯股份有限公司 研磨垫

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SG162794A1 (en) * 2005-07-15 2010-07-29 Toyo Tire & Rubber Co Layered sheets and processes for producing the same
JP4884726B2 (ja) * 2005-08-30 2012-02-29 東洋ゴム工業株式会社 積層研磨パッドの製造方法
US20100009611A1 (en) * 2006-09-08 2010-01-14 Toyo Tire & Rubber Co., Ltd. Method for manufacturing a polishing pad
KR100832106B1 (ko) * 2006-12-05 2008-05-27 삼성전자주식회사 반도체 소자의 제조방법
US8257153B2 (en) 2007-01-15 2012-09-04 Toyo Tire & Rubber Co., Ltd. Polishing pad and a method for manufacturing the same
JP4593643B2 (ja) * 2008-03-12 2010-12-08 東洋ゴム工業株式会社 研磨パッド
US20100035529A1 (en) * 2008-08-05 2010-02-11 Mary Jo Kulp Chemical mechanical polishing pad
JP5846714B2 (ja) * 2009-04-06 2016-01-20 ニッタ・ハース株式会社 研磨パッド
US8697239B2 (en) * 2009-07-24 2014-04-15 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-functional polishing pad
US8551201B2 (en) * 2009-08-07 2013-10-08 Praxair S.T. Technology, Inc. Polyurethane composition for CMP pads and method of manufacturing same
WO2011049318A2 (ko) * 2009-10-13 2011-04-28 주식회사 엘지화학 Cmp용 슬러리 조성물 및 연마방법
JP5606083B2 (ja) * 2010-01-29 2014-10-15 日本発條株式会社 独泡ウレタンシート及びその製造方法
US9156124B2 (en) * 2010-07-08 2015-10-13 Nexplanar Corporation Soft polishing pad for polishing a semiconductor substrate
EP2511236B1 (en) 2011-04-14 2015-07-01 Rohm and Haas Company Improved quality multi-spectral zinc sulfide
JP5710353B2 (ja) * 2011-04-15 2015-04-30 富士紡ホールディングス株式会社 研磨パッド及びその製造方法
EP2634157B1 (en) 2011-05-24 2016-08-10 Rohm and Haas Company Improved quality multi-spectral zinc sulfide
JP5373171B1 (ja) * 2012-10-20 2013-12-18 株式会社ナノテム 砥石およびそれを用いた研削・研磨装置
US8998677B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Bellows driven floatation-type abrading workholder
US8845394B2 (en) 2012-10-29 2014-09-30 Wayne O. Duescher Bellows driven air floatation abrading workholder
US9039488B2 (en) 2012-10-29 2015-05-26 Wayne O. Duescher Pin driven flexible chamber abrading workholder
US9233452B2 (en) 2012-10-29 2016-01-12 Wayne O. Duescher Vacuum-grooved membrane abrasive polishing wafer workholder
US9199354B2 (en) 2012-10-29 2015-12-01 Wayne O. Duescher Flexible diaphragm post-type floating and rigid abrading workholder
US8998678B2 (en) 2012-10-29 2015-04-07 Wayne O. Duescher Spider arm driven flexible chamber abrading workholder
US9604339B2 (en) 2012-10-29 2017-03-28 Wayne O. Duescher Vacuum-grooved membrane wafer polishing workholder
US9011207B2 (en) 2012-10-29 2015-04-21 Wayne O. Duescher Flexible diaphragm combination floating and rigid abrading workholder
JP6004966B2 (ja) * 2013-02-22 2016-10-12 株式会社クラレ 研磨パッドおよび研磨方法
US20150306731A1 (en) * 2014-04-25 2015-10-29 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad
US9649741B2 (en) * 2014-07-07 2017-05-16 Jh Rhodes Company, Inc. Polishing material for polishing hard surfaces, media including the material, and methods of forming and using same
US9873180B2 (en) 2014-10-17 2018-01-23 Applied Materials, Inc. CMP pad construction with composite material properties using additive manufacturing processes
US10875153B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Advanced polishing pad materials and formulations
US10821573B2 (en) 2014-10-17 2020-11-03 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
CN107078048B (zh) 2014-10-17 2021-08-13 应用材料公司 使用加成制造工艺的具复合材料特性的cmp衬垫建构
US11745302B2 (en) 2014-10-17 2023-09-05 Applied Materials, Inc. Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process
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US10875145B2 (en) 2014-10-17 2020-12-29 Applied Materials, Inc. Polishing pads produced by an additive manufacturing process
US10399201B2 (en) 2014-10-17 2019-09-03 Applied Materials, Inc. Advanced polishing pads having compositional gradients by use of an additive manufacturing process
US9630293B2 (en) 2015-06-26 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad composite polishing layer formulation
US9539694B1 (en) 2015-06-26 2017-01-10 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Composite polishing layer chemical mechanical polishing pad
US9457449B1 (en) 2015-06-26 2016-10-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pad with composite polishing layer
US10092991B2 (en) * 2015-07-30 2018-10-09 Jh Rhodes Company, Inc. Polymeric lapping materials, media and systems including polymeric lapping material, and methods of forming and using same
US9484212B1 (en) * 2015-10-30 2016-11-01 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
KR20230169424A (ko) 2015-10-30 2023-12-15 어플라이드 머티어리얼스, 인코포레이티드 원하는 제타 전위를 가진 연마 제품을 형성하는 장치 및 방법
US10593574B2 (en) 2015-11-06 2020-03-17 Applied Materials, Inc. Techniques for combining CMP process tracking data with 3D printed CMP consumables
US10391605B2 (en) 2016-01-19 2019-08-27 Applied Materials, Inc. Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process
US10086494B2 (en) 2016-09-13 2018-10-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High planarization efficiency chemical mechanical polishing pads and methods of making
JP6389497B2 (ja) * 2016-11-09 2018-09-12 株式会社Kri 可撓性を有する透明耐熱フィルム
US10596763B2 (en) 2017-04-21 2020-03-24 Applied Materials, Inc. Additive manufacturing with array of energy sources
US10391606B2 (en) 2017-06-06 2019-08-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing pads for improved removal rate and planarization
US10926378B2 (en) 2017-07-08 2021-02-23 Wayne O. Duescher Abrasive coated disk islands using magnetic font sheet
US11471999B2 (en) 2017-07-26 2022-10-18 Applied Materials, Inc. Integrated abrasive polishing pads and manufacturing methods
US11072050B2 (en) 2017-08-04 2021-07-27 Applied Materials, Inc. Polishing pad with window and manufacturing methods thereof
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US10464187B2 (en) 2017-12-01 2019-11-05 Rohm And Haas Electronic Materials Cmp Holdings, Inc. High removal rate chemical mechanical polishing pads from amine initiated polyol containing curatives
CN112654655A (zh) 2018-09-04 2021-04-13 应用材料公司 先进抛光垫配方
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JP7733464B2 (ja) * 2021-03-30 2025-09-03 富士紡ホールディングス株式会社 研磨パッド及び研磨パッドの製造方法
CN117999150A (zh) 2021-09-02 2024-05-07 Cmc材料有限责任公司 包含聚合物颗粒的纹理化cmp垫
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Publication number Priority date Publication date Assignee Title
CN107107307A (zh) * 2015-03-30 2017-08-29 霓达哈斯股份有限公司 研磨垫
US10625392B2 (en) 2015-03-30 2020-04-21 Nitta Haas Incorporated Polishing pad

Also Published As

Publication number Publication date
US20070275226A1 (en) 2007-11-29
JP2007313641A (ja) 2007-12-06
KR20070114019A (ko) 2007-11-29
KR101360622B1 (ko) 2014-02-07
FR2901499B1 (fr) 2010-09-03
DE102007024459A1 (de) 2007-11-29
TW200806431A (en) 2008-02-01
FR2901499A1 (fr) 2007-11-30
US7445847B2 (en) 2008-11-04
CN101077570A (zh) 2007-11-28
JP5346446B2 (ja) 2013-11-20
TWI418443B (zh) 2013-12-11

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SE01 Entry into force of request for substantive examination
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Address after: Delaware, USA

Patentee after: DuPont Electronic Materials Holdings Co.,Ltd.

Country or region after: U.S.A.

Address before: Delaware, USA

Patentee before: ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, Inc.

Country or region before: U.S.A.