CN100539189C - 制造场效应晶体管的方法以及半导体结构 - Google Patents
制造场效应晶体管的方法以及半导体结构 Download PDFInfo
- Publication number
- CN100539189C CN100539189C CNB2007100894771A CN200710089477A CN100539189C CN 100539189 C CN100539189 C CN 100539189C CN B2007100894771 A CNB2007100894771 A CN B2007100894771A CN 200710089477 A CN200710089477 A CN 200710089477A CN 100539189 C CN100539189 C CN 100539189C
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- Prior art keywords
- gate electrode
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- silicon
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- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims description 84
- 230000005669 field effect Effects 0.000 title claims description 22
- 238000005192 partition Methods 0.000 claims abstract description 44
- 210000000746 body region Anatomy 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims description 65
- 229910052710 silicon Inorganic materials 0.000 claims description 64
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 63
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 51
- 238000005530 etching Methods 0.000 claims description 49
- 229910052751 metal Inorganic materials 0.000 claims description 45
- 239000002184 metal Substances 0.000 claims description 45
- 229910021332 silicide Inorganic materials 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 32
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000002955 isolation Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 3
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 abstract description 23
- 239000010410 layer Substances 0.000 description 109
- 239000000463 material Substances 0.000 description 67
- 239000011241 protective layer Substances 0.000 description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 239000000126 substance Substances 0.000 description 17
- 238000000151 deposition Methods 0.000 description 16
- 239000012071 phase Substances 0.000 description 11
- 230000008021 deposition Effects 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- 239000004020 conductor Substances 0.000 description 7
- 239000007792 gaseous phase Substances 0.000 description 7
- 239000002210 silicon-based material Substances 0.000 description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 4
- 239000000428 dust Substances 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 230000000750 progressive effect Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000005121 nitriding Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- 238000007704 wet chemistry method Methods 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical group [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
- H01L29/66507—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide providing different silicide thicknesses on the gate and on source or drain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66613—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation
- H01L29/66628—Lateral single gate silicon transistors with a gate recessing step, e.g. using local oxidation recessing the gate by forming single crystalline semiconductor material at the source or drain location
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/308,432 | 2006-03-24 | ||
US11/308,432 US7459382B2 (en) | 2006-03-24 | 2006-03-24 | Field effect device with reduced thickness gate |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101043055A CN101043055A (zh) | 2007-09-26 |
CN100539189C true CN100539189C (zh) | 2009-09-09 |
Family
ID=38532435
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007100894771A Expired - Fee Related CN100539189C (zh) | 2006-03-24 | 2007-03-23 | 制造场效应晶体管的方法以及半导体结构 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7459382B2 (zh) |
CN (1) | CN100539189C (zh) |
TW (1) | TW200746427A (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7459382B2 (en) * | 2006-03-24 | 2008-12-02 | International Business Machines Corporation | Field effect device with reduced thickness gate |
JP5222520B2 (ja) * | 2007-10-11 | 2013-06-26 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7767579B2 (en) * | 2007-12-12 | 2010-08-03 | International Business Machines Corporation | Protection of SiGe during etch and clean operations |
US8013426B2 (en) * | 2007-12-28 | 2011-09-06 | Intel Corporation | Transistor having raised source/drain self-aligned contacts and method of forming same |
US20100038715A1 (en) * | 2008-08-18 | 2010-02-18 | International Business Machines Corporation | Thin body silicon-on-insulator transistor with borderless self-aligned contacts |
DE102008054075B4 (de) | 2008-10-31 | 2010-09-23 | Advanced Micro Devices, Inc., Sunnyvale | Halbleiterbauelement mit Abgesenktem Drain- und Sourcebereich in Verbindung mit einem Verfahren zur komplexen Silizidherstellung in Transistoren |
CN101840920B (zh) * | 2009-12-15 | 2012-05-09 | 中国科学院微电子研究所 | 半导体结构及其形成方法 |
US8216906B2 (en) * | 2010-06-30 | 2012-07-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing integrated circuit device with well controlled surface proximity |
US8796147B2 (en) | 2010-12-17 | 2014-08-05 | Stmicroelectronics, Inc. | Layer formation with reduced channel loss |
CN103545207B (zh) * | 2012-07-11 | 2017-07-11 | 中国科学院微电子研究所 | 半导体器件制造方法 |
US20140199833A1 (en) * | 2013-01-11 | 2014-07-17 | Applied Materials, Inc. | Methods for performing a via reveal etching process for forming through-silicon vias in a substrate |
US9882023B2 (en) * | 2016-02-29 | 2018-01-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Sidewall spacers for self-aligned contacts |
US10748899B2 (en) * | 2017-09-26 | 2020-08-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial source and drain structures for high voltage devices |
CN109817528A (zh) * | 2019-01-30 | 2019-05-28 | 上海华虹宏力半导体制造有限公司 | Mos晶体管的制造方法 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
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US5409853A (en) * | 1994-05-20 | 1995-04-25 | International Business Machines Corporation | Process of making silicided contacts for semiconductor devices |
US5498555A (en) * | 1994-11-07 | 1996-03-12 | United Microelectronics Corporation | Method of making LDD with polysilicon and dielectric spacers |
US5814537A (en) * | 1996-12-18 | 1998-09-29 | Sharp Microelectronics Technology,Inc. | Method of forming transistor electrodes from directionally deposited silicide |
US5994736A (en) | 1997-09-22 | 1999-11-30 | United Microelectronics Corporation | Semiconductor device having buried gate electrode with silicide layer and manufacture method thereof |
US6319782B1 (en) * | 1998-09-10 | 2001-11-20 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method of fabricating the same |
TW395058B (en) * | 1999-01-13 | 2000-06-21 | Mosel Vitelic Inc | Manufacturing method of Metal-Oxide Semiconductor (MOS) transistor with an elevate-type source and drain |
US6218711B1 (en) * | 1999-02-19 | 2001-04-17 | Advanced Micro Devices, Inc. | Raised source/drain process by selective sige epitaxy |
JP2001068670A (ja) * | 1999-08-30 | 2001-03-16 | Nec Corp | 半導体装置の製造方法 |
US6214680B1 (en) * | 1999-12-13 | 2001-04-10 | Chartered Semiconductor Manufacturing, Ltd. | Method to fabricate a sub-quarter-micron MOSFET with lightly doped source/drain regions |
US7391087B2 (en) * | 1999-12-30 | 2008-06-24 | Intel Corporation | MOS transistor structure and method of fabrication |
US6534388B1 (en) * | 2000-09-27 | 2003-03-18 | Chartered Semiconductor Manufacturing Ltd. | Method to reduce variation in LDD series resistance |
US6562718B1 (en) | 2000-12-06 | 2003-05-13 | Advanced Micro Devices, Inc. | Process for forming fully silicided gates |
US6660600B2 (en) * | 2001-01-26 | 2003-12-09 | Micron Technology, Inc. | Methods of forming integrated circuitry, methods of forming elevated source/drain regions of a field effect transistor, and methods of forming field effect transistors |
US6767777B2 (en) * | 2001-02-06 | 2004-07-27 | Texas Instruments Incorporated | Method for manufacturing and structure for transistors with reduced gate to contact spacing including etching to thin the spacers |
US6902980B2 (en) * | 2003-06-05 | 2005-06-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of fabricating a high performance MOSFET device featuring formation of an elevated source/drain region |
US6787864B2 (en) | 2002-09-30 | 2004-09-07 | Advanced Micro Devices, Inc. | Mosfets incorporating nickel germanosilicided gate and methods for their formation |
US6921913B2 (en) | 2003-03-04 | 2005-07-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Strained-channel transistor structure with lattice-mismatched zone |
US6902994B2 (en) | 2003-08-15 | 2005-06-07 | United Microelectronics Corp. | Method for fabricating transistor having fully silicided gate |
US6905922B2 (en) | 2003-10-03 | 2005-06-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dual fully-silicided gate MOSFETs |
US7138320B2 (en) | 2003-10-31 | 2006-11-21 | Advanced Micro Devices, Inc. | Advanced technique for forming a transistor having raised drain and source regions |
US7067379B2 (en) | 2004-01-08 | 2006-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicide gate transistors and method of manufacture |
US7067391B2 (en) * | 2004-02-17 | 2006-06-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to form a metal silicide gate device |
US7148143B2 (en) | 2004-03-24 | 2006-12-12 | Texas Instruments Incorporated | Semiconductor device having a fully silicided gate electrode and method of manufacture therefor |
US7172933B2 (en) * | 2004-06-10 | 2007-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Recessed polysilicon gate structure for a strained silicon MOSFET device |
JP2006196646A (ja) * | 2005-01-13 | 2006-07-27 | Renesas Technology Corp | 半導体装置及びその製造方法 |
JP4151976B2 (ja) * | 2005-02-25 | 2008-09-17 | 株式会社東芝 | 半導体装置 |
US7294890B2 (en) * | 2005-03-03 | 2007-11-13 | Agency For Science, Technology And Research | Fully salicided (FUSA) MOSFET structure |
US7459382B2 (en) * | 2006-03-24 | 2008-12-02 | International Business Machines Corporation | Field effect device with reduced thickness gate |
US7297618B1 (en) * | 2006-07-28 | 2007-11-20 | International Business Machines Corporation | Fully silicided gate electrodes and method of making the same |
-
2006
- 2006-03-24 US US11/308,432 patent/US7459382B2/en not_active Expired - Fee Related
-
2007
- 2007-03-20 TW TW096109520A patent/TW200746427A/zh unknown
- 2007-03-23 CN CNB2007100894771A patent/CN100539189C/zh not_active Expired - Fee Related
-
2008
- 2008-11-20 US US12/274,758 patent/US8492803B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20090159934A1 (en) | 2009-06-25 |
US7459382B2 (en) | 2008-12-02 |
US8492803B2 (en) | 2013-07-23 |
TW200746427A (en) | 2007-12-16 |
US20070221964A1 (en) | 2007-09-27 |
CN101043055A (zh) | 2007-09-26 |
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