CN100521230C - 应变沟道鳍片场效应晶体管 - Google Patents

应变沟道鳍片场效应晶体管 Download PDF

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Publication number
CN100521230C
CN100521230C CNB200480002593XA CN200480002593A CN100521230C CN 100521230 C CN100521230 C CN 100521230C CN B200480002593X A CNB200480002593X A CN B200480002593XA CN 200480002593 A CN200480002593 A CN 200480002593A CN 100521230 C CN100521230 C CN 100521230C
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China
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crystalline material
layer
fin
lattice constant
material comprises
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Expired - Fee Related
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Chinese (zh)
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CN1742375A (zh
Inventor
S·达克什纳摩西
J·X·安
Z·克瑞沃卡皮奇
汪海宏
俞斌
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Innovation Core Making Co ltd
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Advanced Micro Devices Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNB200480002593XA 2003-01-23 2004-01-15 应变沟道鳍片场效应晶体管 Expired - Fee Related CN100521230C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/349,042 US6803631B2 (en) 2003-01-23 2003-01-23 Strained channel finfet
US10/349,042 2003-01-23

Publications (2)

Publication Number Publication Date
CN1742375A CN1742375A (zh) 2006-03-01
CN100521230C true CN100521230C (zh) 2009-07-29

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CNB200480002593XA Expired - Fee Related CN100521230C (zh) 2003-01-23 2004-01-15 应变沟道鳍片场效应晶体管

Country Status (7)

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US (2) US6803631B2 (enExample)
EP (1) EP1593161B1 (enExample)
JP (1) JP2006516821A (enExample)
KR (1) KR20050096155A (enExample)
CN (1) CN100521230C (enExample)
TW (1) TWI326489B (enExample)
WO (1) WO2004068585A1 (enExample)

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TW200423405A (en) 2004-11-01
EP1593161A1 (en) 2005-11-09
TWI326489B (en) 2010-06-21
US6803631B2 (en) 2004-10-12
US20040195627A1 (en) 2004-10-07
KR20050096155A (ko) 2005-10-05
US6897527B2 (en) 2005-05-24
CN1742375A (zh) 2006-03-01
EP1593161B1 (en) 2019-04-24
WO2004068585A1 (en) 2004-08-12
US20040145019A1 (en) 2004-07-29
JP2006516821A (ja) 2006-07-06

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