JP2006516821A - 歪みチャネルフィンｆｅｔの形成方法 - Google Patents

歪みチャネルフィンｆｅｔの形成方法 Download PDF

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Publication number
JP2006516821A
JP2006516821A JP2006502829A JP2006502829A JP2006516821A JP 2006516821 A JP2006516821 A JP 2006516821A JP 2006502829 A JP2006502829 A JP 2006502829A JP 2006502829 A JP2006502829 A JP 2006502829A JP 2006516821 A JP2006516821 A JP 2006516821A
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Prior art keywords
crystalline material
layer
fin
lattice constant
gate electrode
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JP2006502829A
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Japanese (ja)
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JP2006516821A5 (enExample
Inventor
ダクシナ−マーシー スリカンテスワラ
ザイリン アン ジュディー
クリボカピク ゾラン
ワン ハイホン
ユ ビン
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2006516821A publication Critical patent/JP2006516821A/ja
Publication of JP2006516821A5 publication Critical patent/JP2006516821A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions

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  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2006502829A 2003-01-23 2004-01-15 歪みチャネルフィンｆｅｔの形成方法 Pending JP2006516821A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/349,042 US6803631B2 (en) 2003-01-23 2003-01-23 Strained channel finfet
PCT/US2004/000967 WO2004068585A1 (en) 2003-01-23 2004-01-15 Strained channel finfet

Publications (2)

Publication Number Publication Date
JP2006516821A true JP2006516821A (ja) 2006-07-06
JP2006516821A5 JP2006516821A5 (enExample) 2007-03-01

Family

ID=32735412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006502829A Pending JP2006516821A (ja) 2003-01-23 2004-01-15 歪みチャネルフィンｆｅｔの形成方法

Country Status (7)

Country Link
US (2) US6803631B2 (enExample)
EP (1) EP1593161B1 (enExample)
JP (1) JP2006516821A (enExample)
KR (1) KR20050096155A (enExample)
CN (1) CN100521230C (enExample)
TW (1) TWI326489B (enExample)
WO (1) WO2004068585A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101382846B1 (ko) * 2012-06-15 2014-04-08 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 높은 이동도 및 변형 채널을 갖는 ＦｉｎＦＥＴ

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Also Published As

Publication number Publication date
TW200423405A (en) 2004-11-01
EP1593161A1 (en) 2005-11-09
TWI326489B (en) 2010-06-21
CN100521230C (zh) 2009-07-29
US6803631B2 (en) 2004-10-12
US20040195627A1 (en) 2004-10-07
KR20050096155A (ko) 2005-10-05
US6897527B2 (en) 2005-05-24
CN1742375A (zh) 2006-03-01
EP1593161B1 (en) 2019-04-24
WO2004068585A1 (en) 2004-08-12
US20040145019A1 (en) 2004-07-29

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