CN100521153C - 反射型cmos图像传感器及其制造方法 - Google Patents

反射型cmos图像传感器及其制造方法 Download PDF

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CN100521153C
CN100521153C CNB2007101460680A CN200710146068A CN100521153C CN 100521153 C CN100521153 C CN 100521153C CN B2007101460680 A CNB2007101460680 A CN B2007101460680A CN 200710146068 A CN200710146068 A CN 200710146068A CN 100521153 C CN100521153 C CN 100521153C
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朴正秀
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Abstract

本发明提供了一种互补型金属氧化物半导体(CMOS)图像传感器，其包括：具有包括倾斜表面和基本上垂直于半导体基板的光接收表面的沟槽部分以及限定于该倾斜沟槽部分的光接收表面一侧上的晶体管形成区域的半导体基板；选择性地形成于倾斜表面上和/或上方的反射膜、基本上垂直于基板表面的多个光电二极管；以及在器件形成区域表面上形成的至少一个MOS晶体管。

Description

反射型CMOS图像传感器及其制造方法
本申请要求2006年9月8日提出的韩国专利申请No.10-2006-0086635的权益，在此引入在此描述的全部内容作为参考。
技术领域
本发明涉及一种制造半导体器件的方法，更具体地，涉及一种反射型CMOS图像传感器及其制造方法。
背景技术
图像传感器是一种用于将由图像传感器检测的光图像转换成电信号的半导体器件。图像传感器可分类为电荷耦合器件(CCD)和互补金属氧化物半导体(CMOS)。
CMOS图像传感器提供有与半导体器件的像素相对应的多个MOS晶体管，该半导体器件具有控制电路和信号处理电路作为外围电路。控制电路和信号处理单元可集成到一起以采用通过MOS晶体管检测输出的转换方法。
CMOS图像传感器可提供有多个单元像素，从而每个单元像素都包括一个光传感器件诸如光电二极管和多个MOS晶体管。
如图1的实例中所示出的，CMOS图像传感器包括通过重复进行离子注入和硅外延生长工艺在硅基板10上和/或上方形成的多个光电二极管22、24和26。光电二极管22、24和26配置为检测红光、绿光和蓝光。用于红光光电二极管22的离子注入层形成于基板10中，且第一硅外延层12能形成于其上和/或其上方。绿光光电二极管24通过使用离子注入工艺形成于第一外延层12中。用于接触红光光电二极管22的插塞42可形成于部分第一外延层12中。使用硅外延生长工艺，形成第二硅外延层14且蓝光光电二极管26形成于第二硅外延层14中。可形成用于接触绿光光电二极管24的插塞46和用于接触红光光电二极管22的插塞44。用于传送通过光电二极管22、24和26检测的光电荷的多个MOS晶体管形成于第二硅外延层14上和/或上方。多个MOS晶体管中的每一个可包括栅极30、栅极绝缘层32和间隙壁(spacer)34。
由于红光光电二极管22和绿光光电二极管24各自的尺寸都大于蓝光光电二级管26，因此用于传输信号的晶体管设置于最上层上，仅蓝光光电二极管26的尺寸成为实际光接收面积。因此，该实际光接收面积小于光电二极管的面积。用于处理红光光电二极管22或绿光光电二极管24的信号的插塞42、44和46通过离子注入工艺形成。然而，如果照射光，则由于插塞可能会在信号中产生噪声。光电二极管22、24和26可分离地形成，以防止其间的干扰。用于隔离光电二极管22、24和26的额外的离子注入层能形成于每一外延层12和14中。
发明内容
本发明的实施例涉及一种具有增强光反射率结构的反射型CMOS图像传感器。
本发明实施例涉及一种CMOS图像传感器，该CMOS图像传感器可包括：具有包括具有倾斜表面和基本上垂直于半导体基板的光接收表面的沟槽部分以及限定于该倾斜沟槽部分的光接收表面一侧上的晶体管形成区域的半导体基板；能选择性地形成于倾斜沟槽部分倾斜表面上的反射膜；基本垂直于基板表面并在晶体管形成区域中相互分离开的多个光电二极管；以及在晶体管形成区域表面上和/或上方的至少一个MOS晶体管。
附图说明
图1例示出了CMOS图像传感器；
实例图2A至图2D例示出了根据实施例CMOS图像传感器的制造方法。
具体实施方式
如实例图2A和2B中所示，CMOS图像传感器包括具有至少一个沟槽A的硅半导体基板100。沟槽A可由两个独立的表面区域形成：倾斜表面220和光接收表面240。限定于基板100上表面上并与倾斜沟槽A的光接收表面240相邻的器件形成区域B。倾斜表面200可构成为相对于基板100的表面基本倾斜地延伸。反射膜260能选择性地形成于倾斜表面220上和/或上方。反射膜260能由反射可见光的金属膜形成。
根据实施例，倾斜表面220可具有相对于基板表面接近45度的角度，以使自反射膜260反射的光朝光接收表面240定向。光接收表面240可以构成为基本上垂直于基板100表面延伸。
多个光电二极管320、340和360可提供于器件形成区域B上和/或上方。可以相互分开并基本垂直于基板上表面地提供光电二极管320、340和360。多个光电二极管可包括蓝光光电二极管320、绿光光电二极管340和红光光电二极管360。蓝光光电二极管320、绿光光电二极管340和红光光电二级管360能顺序地与光接收表面240相邻地形成。由于蓝光具有小的穿透深度以及红光具有大的穿透深度，因此蓝光形成在接近光接收表面340的位置中，且红光光电二极管360形成于最远离光接收表面240的位置中。
包括栅极400、间隙壁420和栅极绝缘膜440的至少一个MOS晶体管形成于器件形成区域B中基板100表面上和/或上方。
如实例图2A中所示，根据实施例，可制备硅半导体基板100，且蚀刻基板100的一定区域以形成沟槽。可在器件形成区域B中形成光电二极管320、340和360以及多个MOS晶体管。倾斜沟槽A可包括两个表面：倾斜表面220和光接收表面240。倾斜表面220相对基板100的上表面可具有接近45度的角度，且光接收表面240基本上垂直于基板100的上表面。
如实例2B中所示，反射膜260能通过在基板100整个表面上和/或上方沉积金属膜以及抛光基板100的表面以去除该金属膜而在倾斜表面220上和/或上方选择性地形成，该金属膜对可见光显示出优异的反射性。使用化学机械抛光方法可抛光基板100的表面。
根据实施例，可通过使用光刻工艺在器件形成区域B上和/或上方形成光致抗蚀剂薄膜图形、在该光致抗蚀剂膜图形上和/或上方沉积金属膜以及去除该光致抗蚀剂膜图形来替代地形成反射膜220。
如实例图2C中所示，能在器件形成区域B上和/或上方重复进行离子注入工艺以形成光电二极管320、340和360。离子注入工艺能使用调整的离子注入能量来进行，从而基本垂直于基板100上表面，即基本平行于光接收表面240形成用于光电二极管320、340、360离子注入层。在与光接收表面240相邻的器件形成区域B中蓝光光电二极管320、绿光光电二极管340和红光光电二极管360顺序地相互分开地形成。
如实例图2D中所示，在基板100的器件形成区域B的上表面上可形成包括栅极400、间隙壁420和栅极绝缘膜440的至少一个MOS晶体管。预定插塞电连接到光电二极管320、340和360，且可以形成至少一个MOS晶体管以传输由光电二极管320、340和360产生的信号。由此，垂直输入至基板100的光能从反射面260以接近90度反射，且所反射的光由光接收表面240接收并聚焦到之后将其转化为电信号的光电二极管320、340和360上。
根据实施例，提供CMOS图像传感器，其以接近90度反射入射光，并将该光输入至多个光电二极管，由此可在光电二极管上形成用于阻挡光的障碍物。因此，可便于具有叠层结构的器件的形成，该叠层结构能增加用于接收入射光的整个面积。由于光电二极管和MOS晶体管能以最短距离连接，因此插塞不是必须的。因此，由于能够防止在信号中由于多级插塞导致的噪声产生，因此可以增强器件性能。
尽管在此已经描述了实施例，但是应当理解，本领域技术人员能设计很多其他改进和实施例，其都落入到本公开原理的精神和范围之内。尤其，在本公开、附图和附属权利要求的范围内，于部件和/或从属组合设置的装置中，可作出各种变化和修改，除了部件和/或装置中的变化和修改之外，替换方案对于本领域技术人员也是明显的。

Claims (20)

1、一种方法，包括：
在半导体基板上形成沟槽，所述沟槽具有相对于基板上表面倾斜的倾斜表面和垂直于半导体基板的光接收表面，其中该基板具有与该光接收表面相邻的器件形成区域；
在所述倾斜表面上方形成反射膜；
在所述器件形成区域中形成多个光电二极管，其中所述光电二极管的结面垂直于基板上表面；以及
在该器件形成区域上方形成至少一个MOS晶体管。
2、根据权利要求1的方法，其特征在于，所述反射膜包括反射可见光的金属膜。
3、根据权利要求1的方法，其特征在于，所述多个光电二极管包括蓝光光电二极管、绿光光电二极管和红光光电二极管。
4、根据权利要求3的方法，其特征在于，所述蓝光光电二极管、绿光光电二极管和红光光电二极管顺序地与光接收表面相邻地形成。
5、根据权利要求1的方法，其特征在于，所述倾斜表面关于基板上表面以45度的角度形成。
6、根据权利要求1的方法，其特征在于，所述沟槽通过蚀刻半导体基板形成。
7、一种装置，包括：
半导体基板，其包括至少一个沟槽，该沟槽具有倾斜表面和垂直于半导体基板上表面的光接收表面，以及与该光接收表面相邻的器件形成区域；
在倾斜表面上方形成的反射膜；
在器件形成区域中的多个光电二极管，其中所述光电二极管的结面垂直于基板上表面；以及
在器件形成区域的表面上方形成的至少一个MOS晶体管。
8、根据权利要求7的装置，其特征在于，所述反射膜包括反射可见光的金属膜。
9、根据权利要求7的装置，其特征在于，所述多个光电二极管包括蓝光光电二极管、绿光光电二极管和红光光电二极管。
10、根据权利要求9的装置，其特征在于，所述蓝光光电二极管、绿光光电二极管和红光光电二极管顺序地与光接收表面相邻地形成。
11、根据权利要求7的装置，其特征在于，所述沟槽的倾斜表面关于基板上表面具有45度的角度。
12、一种方法，包括：
提供半导体基板；
在半导体基板中形成至少一个沟槽区域，该沟槽具有光接收表面和光反射表面；
在所述光反射表面上方形成膜；
在基板内部且与所述光接收表面相邻的位置，顺序形成多个光电二极管；以及之后
在该形成于基板中的光电二极管上方形成至少一个晶体管。
13、根据权利要求12的方法，其特征在于，所述光反射表面相对于所述半导体基板的上表面以倾斜角度形成。
14、根据权利要求13的方法，其特征在于，所述倾斜角度为45度。
15、根据权利要求12的方法，其特征在于，所述光接收表面垂直于所述半导体基板的上表面。
16、根据权利要求12的方法，其特征在于，所述膜包括反射可见光的金属膜。
17、根据权利要求12的方法，其特征在于，所述多个光电二极管包括蓝光光电二极管、绿光光电二极管和红光光电二极管。
18、根据权利要求12的方法，其特征在于，所述蓝光光电二极管形成于最接近所述光接收表面的位置中，以及所述红光光电二极管形成于最远离所述光接收表面的位置中。
19、根据权利要求12的方法，其特征在于，所述至少一个晶体管包括至少一个MOS晶体管。
20、根据权利要求19的方法，其特征在于，所述至少一个MOS晶体管包括栅极、间隙壁和栅极绝缘膜。
CNB2007101460680A 2006-09-08 2007-09-07 反射型cmos图像传感器及其制造方法 Expired - Fee Related CN100521153C (zh)

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US20080061329A1 (en) 2008-03-13
KR100778870B1 (ko) 2007-11-22
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