TWI349365B - Reflection type cmos image sensor and method of manufacturing the same - Google Patents

Reflection type cmos image sensor and method of manufacturing the same

Info

Publication number
TWI349365B
TWI349365B TW096133044A TW96133044A TWI349365B TW I349365 B TWI349365 B TW I349365B TW 096133044 A TW096133044 A TW 096133044A TW 96133044 A TW96133044 A TW 96133044A TW I349365 B TWI349365 B TW I349365B
Authority
TW
Taiwan
Prior art keywords
manufacturing
same
image sensor
reflection type
cmos image
Prior art date
Application number
TW096133044A
Other languages
English (en)
Other versions
TW200814310A (en
Inventor
Jeong Su Park
Original Assignee
Dongbu Hitek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongbu Hitek Co Ltd filed Critical Dongbu Hitek Co Ltd
Publication of TW200814310A publication Critical patent/TW200814310A/zh
Application granted granted Critical
Publication of TWI349365B publication Critical patent/TWI349365B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/1013—Devices sensitive to infrared, visible or ultraviolet radiation devices sensitive to two or more wavelengths, e.g. multi-spectrum radiation detection devices

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
TW096133044A 2006-09-08 2007-09-05 Reflection type cmos image sensor and method of manufacturing the same TWI349365B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060086635A KR100778870B1 (ko) 2006-09-08 2006-09-08 반사 방식의 씨모스 이미지 센서 및 그의 제조 방법

Publications (2)

Publication Number Publication Date
TW200814310A TW200814310A (en) 2008-03-16
TWI349365B true TWI349365B (en) 2011-09-21

Family

ID=39080633

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096133044A TWI349365B (en) 2006-09-08 2007-09-05 Reflection type cmos image sensor and method of manufacturing the same

Country Status (6)

Country Link
US (1) US7675098B2 (zh)
JP (1) JP2008066732A (zh)
KR (1) KR100778870B1 (zh)
CN (1) CN100521153C (zh)
DE (1) DE102007042359B4 (zh)
TW (1) TWI349365B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100767588B1 (ko) * 2006-12-15 2007-10-17 동부일렉트로닉스 주식회사 수직형 이미지 센서의 제조 방법
KR100913325B1 (ko) * 2007-11-05 2009-08-20 주식회사 동부하이텍 듀얼 이미지 센서 및 그 제조 방법
KR100949257B1 (ko) * 2007-12-26 2010-03-25 주식회사 동부하이텍 이미지센서의 제조방법
JP5793688B2 (ja) * 2008-07-11 2015-10-14 パナソニックＩｐマネジメント株式会社 固体撮像装置
KR101009394B1 (ko) 2008-07-30 2011-01-19 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
KR20100075060A (ko) * 2008-12-24 2010-07-02 주식회사 동부하이텍 이미지 센서 및 이미지 센서의 제조 방법
CN102569320A (zh) * 2011-12-30 2012-07-11 上海中科高等研究院 图像传感器的感光区域以及制造方法、图像传感器
CN103199099B (zh) * 2013-04-11 2018-02-27 上海集成电路研发中心有限公司 具有高动态范围的图像传感器像素阵列
JP2015146364A (ja) * 2014-02-03 2015-08-13 ソニー株式会社 固体撮像素子、固体撮像素子の駆動方法、固体撮像素子の製造方法および電子機器
CN104393008B (zh) * 2014-11-12 2019-03-19 上海集成电路研发中心有限公司 具有斜面pn结结构的像元单元及其制造方法
US9686457B2 (en) 2015-09-11 2017-06-20 Semiconductor Components Industries, Llc High efficiency image sensor pixels with deep trench isolation structures and embedded reflectors
US11552205B2 (en) 2020-11-13 2023-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Optical sensing device having inclined reflective surface

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0485960A (ja) * 1990-07-30 1992-03-18 Toshiba Corp 固体撮像装置及びその製造方法
JPH04355560A (ja) * 1991-05-31 1992-12-09 Fuji Xerox Co Ltd 多色光電変換素子
JPH0697402A (ja) * 1992-09-11 1994-04-08 Sony Corp 撮像素子およびその製造方法
KR20000041459A (ko) * 1998-12-22 2000-07-15 김영환 집광기로서 경사진 반사층을 갖는 이미지센서 및 그 제조방법
JP3949360B2 (ja) * 2000-08-29 2007-07-25 日本放送協会 カラーイメージセンサ
KR100689885B1 (ko) * 2004-05-17 2007-03-09 삼성전자주식회사 광감도 및 주변광량비 개선을 위한 ｃｍｏｓ 이미지 센서및 그 제조방법
US7332737B2 (en) * 2004-06-22 2008-02-19 Micron Technology, Inc. Isolation trench geometry for image sensors
KR20060020400A (ko) * 2004-08-31 2006-03-06 매그나칩 반도체 유한회사 광 손실을 감소시킨 시모스 이미지센서의 제조방법
KR100678269B1 (ko) * 2004-10-18 2007-02-02 삼성전자주식회사 씨모스 방식의 이미지 센서와 그 제작 방법
US7791158B2 (en) * 2005-04-13 2010-09-07 Samsung Electronics Co., Ltd. CMOS image sensor including an interlayer insulating layer and method of manufacturing the same
US7456452B2 (en) * 2005-12-15 2008-11-25 Micron Technology, Inc. Light sensor having undulating features for CMOS imager

Also Published As

Publication number Publication date
DE102007042359B4 (de) 2013-06-06
DE102007042359A1 (de) 2008-04-17
US7675098B2 (en) 2010-03-09
US20080061329A1 (en) 2008-03-13
KR100778870B1 (ko) 2007-11-22
JP2008066732A (ja) 2008-03-21
TW200814310A (en) 2008-03-16
CN100521153C (zh) 2009-07-29
CN101140904A (zh) 2008-03-12

Similar Documents

Publication Publication Date Title
TWI349365B (en) Reflection type cmos image sensor and method of manufacturing the same
EP2030239A4 (en) A REVERSED PHOTODIODE USING THE IMAGE SENSOR AND MANUFACTURING METHOD THEREFOR
EP2090872A4 (en) PIEZOELECTRIC SENSOR AND METHOD FOR THE PRODUCTION THEREOF
EP1858082A4 (en) IMAGE SENSOR WHERE A PHOTODIODE REGION IS EMBEDDED AND MANUFACTURING METHOD THEREFOR
TWI366914B (en) Image sensor devices and methods for forming the same
TWI350384B (en) Optical film and manufacturing method of the same
EP2165196A4 (en) DIAGNOSTIC DEVICE USING IMAGE SENSOR AND METHOD OF MANUFACTURING SAME
EP1840545B8 (en) Torque sensor and method of manufacturing the same
GB0611537D0 (en) Image sensor and display
GB0611536D0 (en) Image sensor and display
HK1137240A1 (zh) 集成的接近度感應器和光感應器
EP2073272A4 (en) VIBRATION SENSOR AND METHOD FOR MANUFACTURING SAME
EP2006700A4 (en) MAGNETIC SENSOR AND METHOD FOR THE PRODUCTION THEREOF
GB2425887B (en) Image sensor and method of configuring an image sensor
EP1779431A4 (en) SCOM IMAGE SENSOR
WO2008057744A8 (en) Sensors and methods of making the same
HK1131657A1 (en) Infrared sensor
EP1887331A4 (en) INFRARED SENSOR AND METHOD FOR MANUFACTURING SAME
EP1887397A4 (en) DEVICE FOR MOVING A PICTURE LENS AND METHOD OF ASSEMBLY
GB2414132B (en) CMOS image sensor
EP2006913A4 (en) COLOR PICTURE SENSOR AND METHOD FOR PRODUCING A COLOR IMAGE SENSOR
GB0601941D0 (en) Image sensor
GB0620151D0 (en) Image sensor and method of configuring an image sensor
EP1993322A4 (en) ULTRASOUND SENSOR, AND METHOD OF MANUFACTURING SAME
EP2057448A4 (en) TOUCH SENSOR FOR CURVED SURFACES AND METHOD OF MANUFACTURING THE SAME

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees