CN100477224C - 半导体结构及其制造方法 - Google Patents
半导体结构及其制造方法 Download PDFInfo
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- CN100477224C CN100477224C CNB200610143831XA CN200610143831A CN100477224C CN 100477224 C CN100477224 C CN 100477224C CN B200610143831X A CNB200610143831X A CN B200610143831XA CN 200610143831 A CN200610143831 A CN 200610143831A CN 100477224 C CN100477224 C CN 100477224C
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- Prior art keywords
- metal
- layer
- rare earth
- semiconductor structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (18)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/303,715 | 2005-12-16 | ||
US11/303,715 US7569466B2 (en) | 2005-12-16 | 2005-12-16 | Dual metal gate self-aligned integration |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1983599A CN1983599A (zh) | 2007-06-20 |
CN100477224C true CN100477224C (zh) | 2009-04-08 |
Family
ID=38165985
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB200610143831XA Active CN100477224C (zh) | 2005-12-16 | 2006-11-09 | 半导体结构及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US7569466B2 (zh) |
JP (1) | JP4791332B2 (zh) |
CN (1) | CN100477224C (zh) |
TW (1) | TW200733387A (zh) |
Families Citing this family (48)
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US7898047B2 (en) * | 2003-03-03 | 2011-03-01 | Samsung Electronics Co., Ltd. | Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices |
US7112860B2 (en) * | 2003-03-03 | 2006-09-26 | Cree, Inc. | Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices |
US9030320B2 (en) | 2006-10-11 | 2015-05-12 | Thermal Matrix USA, Inc. | Real time threat detection system using integrated passive sensors |
JP4271230B2 (ja) | 2006-12-06 | 2009-06-03 | 株式会社東芝 | 半導体装置 |
EP1944801A1 (en) * | 2007-01-10 | 2008-07-16 | Interuniversitair Microelektronica Centrum | Methods for manufacturing a CMOS device with dual work function |
US20080272435A1 (en) * | 2007-05-02 | 2008-11-06 | Chien-Ting Lin | Semiconductor device and method of forming the same |
US7718496B2 (en) | 2007-10-30 | 2010-05-18 | International Business Machines Corporation | Techniques for enabling multiple Vt devices using high-K metal gate stacks |
JP5067133B2 (ja) * | 2007-11-13 | 2012-11-07 | 住友金属鉱山株式会社 | 吸収型ndフィルター |
US8076734B2 (en) * | 2007-11-29 | 2011-12-13 | International Business Machines Corporation | Semiconductor structure including self-aligned deposited gate dielectric |
JP2009141168A (ja) * | 2007-12-07 | 2009-06-25 | Panasonic Corp | 半導体装置及びその製造方法 |
US20090152651A1 (en) * | 2007-12-18 | 2009-06-18 | International Business Machines Corporation | Gate stack structure with oxygen gettering layer |
US7622341B2 (en) * | 2008-01-16 | 2009-11-24 | International Business Machines Corporation | Sige channel epitaxial development for high-k PFET manufacturability |
WO2009101824A1 (ja) * | 2008-02-13 | 2009-08-20 | Nec Corporation | Mis型電界効果トランジスタ及びその製造方法並び半導体装置及びその製造方法 |
EP2093796A1 (en) * | 2008-02-20 | 2009-08-26 | Imec | Semiconductor device and method for fabricating the same |
EP2112687B1 (en) * | 2008-04-22 | 2012-09-19 | Imec | Method for fabricating a dual workfunction semiconductor device and the device made thereof |
JP2009267180A (ja) * | 2008-04-28 | 2009-11-12 | Renesas Technology Corp | 半導体装置 |
US8232604B2 (en) * | 2008-05-01 | 2012-07-31 | International Business Machines Corporation | Transistor with high-k dielectric sidewall spacer |
JP4602440B2 (ja) * | 2008-06-12 | 2010-12-22 | パナソニック株式会社 | 半導体装置及びその製造方法 |
US8129797B2 (en) | 2008-06-18 | 2012-03-06 | International Business Machines Corporation | Work function engineering for eDRAM MOSFETs |
US8803245B2 (en) | 2008-06-30 | 2014-08-12 | Mcafee, Inc. | Method of forming stacked trench contacts and structures formed thereby |
US8207582B2 (en) * | 2009-01-05 | 2012-06-26 | Micron Technology, Inc. | Semiconductor devices including dual gate structures |
US7943457B2 (en) * | 2009-04-14 | 2011-05-17 | International Business Machines Corporation | Dual metal and dual dielectric integration for metal high-k FETs |
US7943460B2 (en) * | 2009-04-20 | 2011-05-17 | International Business Machines Corporation | High-K metal gate CMOS |
JP5329294B2 (ja) * | 2009-04-30 | 2013-10-30 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US8106455B2 (en) * | 2009-04-30 | 2012-01-31 | International Business Machines Corporation | Threshold voltage adjustment through gate dielectric stack modification |
US7999332B2 (en) * | 2009-05-14 | 2011-08-16 | International Business Machines Corporation | Asymmetric semiconductor devices and method of fabricating |
JP5372617B2 (ja) * | 2009-06-24 | 2013-12-18 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
KR101656443B1 (ko) * | 2009-11-20 | 2016-09-22 | 삼성전자주식회사 | 금속 게이트 스택 구조물을 갖는 씨모스 소자 |
DE102009047307B4 (de) * | 2009-11-30 | 2012-10-31 | Globalfoundries Dresden Module One Limited Liability Company & Co. Kg | Verfahren zur Vergrößerung der Stabilität eines Gatedielektrikums mit großem ε in einem Gatestapel mit großem ε durch eine sauerstoffreiche Titannitriddeckschicht |
KR101656444B1 (ko) | 2010-01-25 | 2016-09-09 | 삼성전자주식회사 | 상보형 mos 트랜지스터, 상기 상보형 mos 트랜지스터를 포함하는 반도체 장치, 및 상기 반도체 장치를 포함하는 반도체 모듈 |
TWI464786B (zh) * | 2010-05-27 | 2014-12-11 | United Microelectronics Corp | 形成金屬閘極結構之方法與形成金屬閘極電晶體之方法 |
US8268712B2 (en) * | 2010-05-27 | 2012-09-18 | United Microelectronics Corporation | Method of forming metal gate structure and method of forming metal gate transistor |
JP5159850B2 (ja) * | 2010-09-27 | 2013-03-13 | パナソニック株式会社 | 半導体装置 |
US20120139014A1 (en) * | 2010-12-01 | 2012-06-07 | International Business Machines Corporation | Structure and method for low temperature gate stack for advanced substrates |
US8420473B2 (en) | 2010-12-06 | 2013-04-16 | International Business Machines Corporation | Replacement gate devices with barrier metal for simultaneous processing |
CN103137475B (zh) * | 2011-11-23 | 2015-09-16 | 中国科学院微电子研究所 | 一种半导体结构及其制造方法 |
US9177870B2 (en) * | 2011-12-16 | 2015-11-03 | Taiwan Semiconductor Manufacturing Company Ltd. | Enhanced gate replacement process for high-K metal gate technology |
US9620619B2 (en) * | 2012-01-12 | 2017-04-11 | Globalfoundries Inc. | Borderless contact structure |
US8772114B2 (en) | 2012-03-30 | 2014-07-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal gate semiconductor device and method of fabricating thereof |
US9041116B2 (en) | 2012-05-23 | 2015-05-26 | International Business Machines Corporation | Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs) |
JP5579313B2 (ja) * | 2013-08-21 | 2014-08-27 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9922880B2 (en) | 2014-09-26 | 2018-03-20 | Qualcomm Incorporated | Method and apparatus of multi threshold voltage CMOS |
US9570315B2 (en) | 2015-03-18 | 2017-02-14 | United Microelectronics Corporation | Method of interfacial oxide layer formation in semiconductor device |
US10050147B2 (en) * | 2015-07-24 | 2018-08-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US10062693B2 (en) | 2016-02-24 | 2018-08-28 | International Business Machines Corporation | Patterned gate dielectrics for III-V-based CMOS circuits |
US10593600B2 (en) * | 2016-02-24 | 2020-03-17 | International Business Machines Corporation | Distinct gate stacks for III-V-based CMOS circuits comprising a channel cap |
CN108346577B (zh) * | 2017-01-22 | 2021-04-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其制造方法 |
US10103065B1 (en) | 2017-04-25 | 2018-10-16 | International Business Machines Corporation | Gate metal patterning for tight pitch applications |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6313379A (ja) * | 1986-07-04 | 1988-01-20 | Nippon Telegr & Teleph Corp <Ntt> | 半導体装置およびその製造方法 |
US6444512B1 (en) * | 2000-06-12 | 2002-09-03 | Motorola, Inc. | Dual metal gate transistors for CMOS process |
KR100476926B1 (ko) * | 2002-07-02 | 2005-03-17 | 삼성전자주식회사 | 반도체 소자의 듀얼 게이트 형성방법 |
US7045406B2 (en) * | 2002-12-03 | 2006-05-16 | Asm International, N.V. | Method of forming an electrode with adjusted work function |
JP4524995B2 (ja) * | 2003-03-25 | 2010-08-18 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7329923B2 (en) | 2003-06-17 | 2008-02-12 | International Business Machines Corporation | High-performance CMOS devices on hybrid crystal oriented substrates |
JP3793190B2 (ja) * | 2003-09-19 | 2006-07-05 | 株式会社東芝 | 半導体装置の製造方法 |
US7023055B2 (en) | 2003-10-29 | 2006-04-04 | International Business Machines Corporation | CMOS on hybrid substrate with different crystal orientations using silicon-to-silicon direct wafer bonding |
US20050116290A1 (en) | 2003-12-02 | 2005-06-02 | De Souza Joel P. | Planar substrate with selected semiconductor crystal orientations formed by localized amorphization and recrystallization of stacked template layers |
JP4085051B2 (ja) * | 2003-12-26 | 2008-04-30 | 株式会社東芝 | 半導体装置およびその製造方法 |
JP2005294422A (ja) * | 2004-03-31 | 2005-10-20 | Renesas Technology Corp | 半導体装置およびその製造方法 |
US6897095B1 (en) * | 2004-05-12 | 2005-05-24 | Freescale Semiconductor, Inc. | Semiconductor process and integrated circuit having dual metal oxide gate dielectric with single metal gate electrode |
US7297588B2 (en) * | 2005-01-28 | 2007-11-20 | Freescale Semiconductor, Inc. | Electronic device comprising a gate electrode including a metal-containing layer having one or more impurities and a process for forming the same |
US20070048920A1 (en) * | 2005-08-25 | 2007-03-01 | Sematech | Methods for dual metal gate CMOS integration |
-
2005
- 2005-12-16 US US11/303,715 patent/US7569466B2/en not_active Expired - Fee Related
-
2006
- 2006-11-09 CN CNB200610143831XA patent/CN100477224C/zh active Active
- 2006-11-24 JP JP2006317816A patent/JP4791332B2/ja not_active Expired - Fee Related
- 2006-12-04 TW TW095144989A patent/TW200733387A/zh unknown
-
2009
- 2009-07-23 US US12/508,177 patent/US7872317B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP4791332B2 (ja) | 2011-10-12 |
US7872317B2 (en) | 2011-01-18 |
JP2007165872A (ja) | 2007-06-28 |
US7569466B2 (en) | 2009-08-04 |
US20090283830A1 (en) | 2009-11-19 |
US20070138563A1 (en) | 2007-06-21 |
TW200733387A (en) | 2007-09-01 |
CN1983599A (zh) | 2007-06-20 |
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Legal Events
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20171110 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171110 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
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TR01 | Transfer of patent right |