CN100464425C - 半导体结构及其制造方法 - Google Patents
半导体结构及其制造方法 Download PDFInfo
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- CN100464425C CN100464425C CNB2006101157388A CN200610115738A CN100464425C CN 100464425 C CN100464425 C CN 100464425C CN B2006101157388 A CNB2006101157388 A CN B2006101157388A CN 200610115738 A CN200610115738 A CN 200610115738A CN 100464425 C CN100464425 C CN 100464425C
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- nitride film
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- nfet
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- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000010276 construction Methods 0.000 title 1
- 150000004767 nitrides Chemical class 0.000 claims abstract description 98
- 238000000034 method Methods 0.000 claims abstract description 42
- 238000002955 isolation Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 36
- 239000000203 mixture Substances 0.000 claims description 33
- 230000006835 compression Effects 0.000 claims description 26
- 238000007906 compression Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 26
- 238000005516 engineering process Methods 0.000 claims description 23
- 239000004020 conductor Substances 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 239000002019 doping agent Substances 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- 238000005468 ion implantation Methods 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims 2
- 229910052787 antimony Inorganic materials 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229910003811 SiGeC Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
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- 229920005591 polysilicon Polymers 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823878—Complementary field-effect transistors, e.g. CMOS isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
- H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Element Separation (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Local Oxidation Of Silicon (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/162,953 US7202513B1 (en) | 2005-09-29 | 2005-09-29 | Stress engineering using dual pad nitride with selective SOI device architecture |
US11/162,953 | 2005-09-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1941387A CN1941387A (zh) | 2007-04-04 |
CN100464425C true CN100464425C (zh) | 2009-02-25 |
Family
ID=37892811
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006101157388A Active CN100464425C (zh) | 2005-09-29 | 2006-08-15 | 半导体结构及其制造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7202513B1 (zh) |
CN (1) | CN100464425C (zh) |
TW (1) | TW200717800A (zh) |
Families Citing this family (32)
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US8530355B2 (en) * | 2005-12-23 | 2013-09-10 | Infineon Technologies Ag | Mixed orientation semiconductor device and method |
US7338834B2 (en) * | 2006-03-17 | 2008-03-04 | Acorn Technologies, Inc. | Strained silicon with elastic edge relaxation |
US7829407B2 (en) * | 2006-11-20 | 2010-11-09 | International Business Machines Corporation | Method of fabricating a stressed MOSFET by bending SOI region |
US7888197B2 (en) * | 2007-01-11 | 2011-02-15 | International Business Machines Corporation | Method of forming stressed SOI FET having doped glass box layer using sacrificial stressed layer |
US20080237733A1 (en) * | 2007-03-27 | 2008-10-02 | International Business Machines Corporation | Structure and method to enhance channel stress by using optimized sti stress and nitride capping layer stress |
KR100899646B1 (ko) | 2007-06-12 | 2009-05-27 | 삼성전자주식회사 | 반도체 소자 및 이를 형성하는 방법 |
US20090050972A1 (en) * | 2007-08-20 | 2009-02-26 | Richard Lindsay | Strained Semiconductor Device and Method of Making Same |
US8877576B2 (en) * | 2007-08-23 | 2014-11-04 | Infineon Technologies Ag | Integrated circuit including a first channel and a second channel |
US8263466B2 (en) * | 2007-10-17 | 2012-09-11 | Acorn Technologies, Inc. | Channel strain induced by strained metal in FET source or drain |
KR100937599B1 (ko) * | 2007-12-17 | 2010-01-20 | 한국전자통신연구원 | 반도체 장치 및 그 형성 방법 |
JP2009182264A (ja) * | 2008-01-31 | 2009-08-13 | Toshiba Corp | 半導体装置およびその製造方法 |
US8454653B2 (en) * | 2008-02-20 | 2013-06-04 | Covidien Lp | Compound barb medical device and method |
US8274115B2 (en) * | 2008-03-19 | 2012-09-25 | Globalfoundries Singapore Pte. Ltd. | Hybrid orientation substrate with stress layer |
US7700416B1 (en) * | 2008-04-25 | 2010-04-20 | Acorn Technologies, Inc. | Tensile strained semiconductor on insulator using elastic edge relaxation and a sacrificial stressor layer |
US8112729B2 (en) * | 2009-04-20 | 2012-02-07 | International Business Machines Corporation | Method and system for selective stress enablement in simulation modeling |
US8022488B2 (en) * | 2009-09-24 | 2011-09-20 | International Business Machines Corporation | High-performance FETs with embedded stressors |
US8361867B2 (en) | 2010-03-19 | 2013-01-29 | Acorn Technologies, Inc. | Biaxial strained field effect transistor devices |
US9059201B2 (en) | 2010-04-28 | 2015-06-16 | Acorn Technologies, Inc. | Transistor with longitudinal strain in channel induced by buried stressor relaxed by implantation |
US8361868B2 (en) | 2010-04-28 | 2013-01-29 | Acorn Technologies, Inc. | Transistor with longitudinal strain in channel induced by buried stressor relaxed by implantation |
US8835994B2 (en) * | 2010-06-01 | 2014-09-16 | International Business Machines Corporation | Reduced corner leakage in SOI structure and method |
CN102064177B (zh) * | 2010-11-11 | 2012-09-26 | 电子科技大学 | 一种应力放大的cmos晶体管结构 |
CN101924107B (zh) * | 2010-07-15 | 2012-09-26 | 电子科技大学 | 一种应力增强的cmos晶体管结构 |
US9406798B2 (en) | 2010-08-27 | 2016-08-02 | Acorn Technologies, Inc. | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer |
US8395213B2 (en) | 2010-08-27 | 2013-03-12 | Acorn Technologies, Inc. | Strained semiconductor using elastic edge relaxation of a stressor combined with buried insulating layer |
US10833194B2 (en) | 2010-08-27 | 2020-11-10 | Acorn Semi, Llc | SOI wafers and devices with buried stressor |
US8647935B2 (en) | 2010-12-17 | 2014-02-11 | International Business Machines Corporation | Buried oxidation for enhanced mobility |
US8642430B2 (en) * | 2012-04-09 | 2014-02-04 | GlobalFoundries, Inc. | Processes for preparing stressed semiconductor wafers and for preparing devices including the stressed semiconductor wafers |
US20130285117A1 (en) * | 2012-04-27 | 2013-10-31 | International Business Machines Corporation | CMOS WITH SiGe CHANNEL PFETs AND METHOD OF FABRICATION |
CN102916047B (zh) * | 2012-10-23 | 2015-09-30 | 哈尔滨工程大学 | 一种利用埋氧腐蚀技术的soi体接触结构及形成方法 |
US9018057B1 (en) * | 2013-10-08 | 2015-04-28 | Stmicroelectronics, Inc. | Method of making a CMOS semiconductor device using a stressed silicon-on-insulator (SOI) wafer |
US9196544B2 (en) | 2014-03-14 | 2015-11-24 | Globalfoundries Singapore Pte. Ltd. | Integrated circuits with stressed semiconductor-on-insulator (SOI) body contacts and methods for fabricating the same |
US11450573B2 (en) * | 2020-06-17 | 2022-09-20 | Globalfoundries U.S. Inc. | Structure with different stress-inducing isolation dielectrics for different polarity FETs |
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US20070069294A1 (en) | 2007-03-29 |
US20070122965A1 (en) | 2007-05-31 |
US7202513B1 (en) | 2007-04-10 |
CN1941387A (zh) | 2007-04-04 |
TW200717800A (en) | 2007-05-01 |
US7550364B2 (en) | 2009-06-23 |
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