CN100463165C - 半导体存储器件的熔断器及其修理工艺 - Google Patents

半导体存储器件的熔断器及其修理工艺 Download PDF

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CN100463165C
CN100463165C CNB2005100544478A CN200510054447A CN100463165C CN 100463165 C CN100463165 C CN 100463165C CN B2005100544478 A CNB2005100544478 A CN B2005100544478A CN 200510054447 A CN200510054447 A CN 200510054447A CN 100463165 C CN100463165 C CN 100463165C
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fuse
conductive film
contact electrode
laser beam
lower conductive
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安俊权
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SK Hynix Inc
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Abstract

本发明涉及一种半导体存储器件的熔断器及其修理工艺。该熔断器包括：形成在半导体衬底下部结构上的多层互连的下导电膜、多层互连的向上与下导电膜隔开从而在其间限定预定垂直间隔的上导电膜、以及将上和下导电膜彼此垂直连接并形成熔断器体的接触电极。下导电膜具有与上导电膜不一致的形式。利用此结构，虑及激光束照射区，本发明可以实现熔断器长度及相邻熔断器之间距离的稳定最小化，以用于半导体存储器件的高度集成。按此方式，本发明执行使用激光束切断接触电极和/或上导电膜的修理工艺。

Description

半导体存储器件的熔断器及其修理工艺
技术领域
本发明涉及一种半导体存储器件，更加特别地，涉及一种半导体存储器件的修理工艺中采用的熔断器(fuse)及该修理工艺。
背景技术
在作为最广泛使用的存储器件的动态随机存取存储器(DRAM)中，包括在所制造的DRAM芯片中的一些存储单元倾向于显示出局部故障。因此，通过修理工艺，这些有缺陷的存储单元由预先在芯片制造过程中制备的冗余单元所取代，从而不会对所得芯片的运行造成任何负面影响。总之，修理工艺的使用有利于增大芯片产量。
在修理工艺中，用于选择各缺陷存储单元并以冗余单元的地址信号取代对应于缺陷存储单元的地址信号的程序在内部电路中执行。由此，若输入对应于缺陷存储单元的线路的地址信号，则缺陷存储单元的所选取的线路由冗余单元的线路所取代。为实现此程序，通常使用激光束来切断熔断器。此处，熔断器是将被激光束切断的互连线，且由熔断器占据的区域称作熔断器盒。
熔断器主要由多晶硅制成，并与第一多晶硅层的字线或第二多晶硅层的位线的形成同时形成，而非通过额外的工艺形成。近来，随着半导体存储器件的集成度和处理速度的增大，目前熔断器越来越多地由金属制成，而不是多晶硅。
图1为一布置图，示出根据现有技术的半导体存储器件中包括的熔断器。参照图1，根据现有技术的熔断器12中的每一个具有单层导电线的形式(由多晶硅或金属制成)，且如上所述，与字线、位线或金属互连的形成同时形成。在此情况下，若熔断器12的宽度为0.8微米，则相邻熔断器12之间的距离必须加倍至1.6微米，从而确保使用激光束的熔断器修理工艺的稳定性。
然而，在根据现有技术的半导体存储器件的熔断器中，作为在半导体衬底上水平地排列多个呈单层导电线形式的熔断器的结果，随着半导体存储器件集成度增大，需要减小熔断器12之间的距离。然而，熔断器12之间距离的这种减小相应减小了激光束照射范围，导致了激光束切断不期望的熔断器的风险。
发明内容
因此，本发明鉴于上述问题提出，本发明的目的在于提供一种半导体存储器件的熔断器、以及用于它的修理工艺，其中在半导体存储器件的多层互连的制造中，将垂直地把上和下互连彼此连接的接触电极形成为熔断器体(fuse body)，从而对于半导体存储器件的高度集成，考虑到激光束照射区域，能够实现熔断器之间距离的稳定的最小化。
根据本发明的一个方面，上述和其它目的可以通过提供一种半导体存储器件的熔断器来实现，该熔断器包括：多层互连的形成在半导体衬底下部结构上的下导电膜；多层互连的上导电膜，其向上与下导电膜隔开从而在其间限定预定的垂直间隔；以及接触电极，其垂直地将上和下导电膜彼此连接并形成熔断器体，其中下导电膜具有与上导电膜不一致的形式。该上导电膜具有水平线形式，并且该下导电膜具有L形、或90°旋转的L形形式、或者顺时针或逆时针90°旋转的L形形式。
根据本发明的另一方面，提供一种用于半导体存储器件的熔断器的修理工艺，该熔断器包括形成在半导体衬底下部结构上的多层互连的下导电膜、向上与下导电膜隔开从而在其间限定预定的垂直间隔的多层互连的上导电膜、以及垂直地将上和下导电膜彼此连接并形成熔断器体的接触电极，该工艺包括：使用激光束切断熔断器的接触电极和/或上导电膜。
附图说明
通过下面结合附图的详细介绍，将使本发明的上述和其它目的、特征及其它优点变得更加明显易懂，附图中：
图1为示出根据现有技术的半导体存储器件的熔断器的布置图；
图2为示出根据本发明第一实施例的半导体存储器件的熔断器的布置图；
图3a和3b为示出根据本发明第二实施例的半导体存储器件的熔断器的布置图；
图4a和4b为示出根据本发明第三实施例的半导体存储器件的熔断器的布置图；
图5a和5b为示出根据本发明第四实施例的半导体存储器件的熔断器和接触电极的布置图；
图6为说明根据本发明的使用激光束切断熔断器的修理工艺的视图；
图7为说明根据本发明的使用激光束切断熔断器的另一修理工艺的视图，其中为熔断器增加了焊垫(pad)；以及
图8为说明根据本发明的使用激光束切断熔断器的又一修理工艺的视图，其中在相邻熔断器之间插入了接触电极。
具体实施方式
现在，将参照附图说明本发明的优选实施例。
图2为一布置图，示出根据本发明第一实施例的半导体存储器件的熔断器。
参照图2，本发明的熔断器为多层互连的形式，其包括：形成在作为半导体衬底的下部结构100的层间绝缘膜上的下导电膜102；向上与下导电膜102隔开的上导电膜106，从而在其间限定预定的垂直间隔；以及垂直地将下和上导电膜102和106彼此连接的接触电极104。此处，下和上导电膜102和106由金属制成，连接下和上导电膜102和106的垂直接触电极104形成熔断器体。
在本发明的第一实施例中，为了提供用于修理工艺的激光束照射空间，上导电膜106具有水平线形式，下导电膜102具有L形或90°旋转的L形形式。下导电膜102形成为具有L形或90°旋转的L形形式而非水平线形式的原因在于，为了在下导电膜102与接触电极104之间限定预定的间隔，以防止下导电膜102被激光束切断。
在本实施例中，形成多个熔断器，且将其非对称地排列成两行，提供用于修理工艺的充足激光束照射空间。
借助此结构，利用多个带垂直接触电极的高度集成的熔断器，本发明可以提供使用修理熔断器的半导体存储器件或其它半导体器件。在需要减小半导体器件的整体尺寸从而实现其高集成度时，由熔断器占据的区域，即熔断器盒，必须相应减小。在此方面，本发明通过使用垂直接触电极104使得能够明显减小熔断器的整体尺寸。由此，在本发明中，熔断器或熔断器盒可以集成，即使是在更小的狭窄区域中，同时确保充分的熔断器布图稳定性，导致半导体器件生产率的提高。
图3a和3b为示出根据本发明第二实施例的半导体存储器件的熔断器的布置图。
参照图3a，连接于垂直接触电极104的第二实施例的下导电膜102a具有顺时针或逆时针90°旋转的L形形式。参照图3b，本实施例的熔断器还可包括金属焊垫108，其借助于接触电极(未示出)连接至上金属膜106。在此情况下，金属焊垫108比作为熔断器体的接触电极104更大。
在第二实施例中，多个熔断器对称排列为两行。
图4a和4b为示出根据本发明第三实施例的半导体存储器件的熔断器的布置图。
参照图4a，根据第三实施例的多个熔断器具有与第一实施例相同的布置，除了其对称排列的事实以外。参照图4b，可以在对称排列为两行的熔断器之一上增加金属焊垫108a。类似地，金属焊垫108a借助于接触电极(未示出)连接至上金属膜106。
在图3b和4b所示的本发明的第二和第三实施例中，即使接触电极104的尺寸肉眼不可见，但是添加到熔断器上的金属焊垫108、108a使得接触电极104能够在修理工艺中用肉眼轻易确认。
图5a和5b为示出根据本发明第四实施例的半导体存储器件的熔断器和附加接触电极的布置图。
参照图5a，本发明的第四实施例与第三实施例相似，除在两行熔断器之间限定的间隔中增加彼此间隔开的两个或更多个接触电极110之外。在此情况下，每个接触电极110具有与用作熔断器体的接触电极104的尺寸相等或类似的尺寸。或者，参照图5b，可以在两行熔断器之间限定的间隔中形成单个接触电极110a。单个接触电极110a具有与两个或更多个熔断器的尺寸相等的尺寸。
作为在两行熔断器104之间的间隔中增加彼此隔开的两个或更多个接触电极110或单个接触电极110a的结果，本实施例可以防止排列在一行中的某些熔断器的腐蚀对排列在另一行上的其它熔断器产生负面影响。
图6为说明根据本发明的使用激光束切断熔断器的修理工艺的视图。
参照图6，在修理工艺中，熔断器的垂直连接下和上导电膜102和106的接触电极104由激光束切断。在此情况下，熔断器的上导电膜106与接触电极104一起或单独地被激光束切断。
图7为说明根据本发明的使用激光束切断熔断器的另一修理工艺的视图，其中在熔断器上增加了金属焊垫108a。
参照图7，在涉及具有便于以肉眼确认熔断器104的金属焊垫108a的熔断器的修理工艺中，熔断器的接触电极104和上导电膜106作为修理目标由激光束切断，如点划线120所示。接触垫107将金属焊垫108a连接至上导电膜106。
图8为说明根据本发明的使用激光束切断熔断器的又一修理工艺的视图，其中在两行熔断器之间限定的间隔中增加了电极110、110a。
参照图8，在涉及具有位于两行熔断器之间的间隔中的接触电极110、110a的熔断器的修理工艺中，熔断器的接触电极104和上导电膜106作为修理目标由激光束切断，如点划线120所示。在此情况下，需要小心，从而不以激光束切断接触电极110、110a。接触垫107与上导电膜106连接。
由以上说明显见，本发明提供了一种半导体存储器件的熔断器，其中，在半导体存储器件的多层互连的制造中，垂直地将上和下互连彼此连接的接触电极形成为熔断器体，从而能在虑及激光束照射区的情况下，实现熔断器、以及相邻熔断器之间距离的稳定的最小化，以用于半导体存储器件的高集成度；本发明还提供一种用于该熔断器的修理工艺。
尽管已经为说明的目的公开了本发明的优选实施例，但是本领域技术人员将理解，在不脱离由所附权利要求公开的本发明的范围和实质的情况下，可进行各种改动、增补和替换。

Claims (2)

1.一种用于半导体存储器件的熔断器的修理工艺，包括：
提供熔断器，该熔断器包括形成在半导体衬底下部结构上的多层互连的下导电膜、所述多层互连的向上与该下导电膜隔开从而在其间限定预定的垂直间隔的上导电膜、以及垂直地将所述上和下导电膜彼此连接的作为接触电极的熔断器体；以及
在熔断器体构成的接触电极的位置提供激光束，从而切断接触电极以及与接触电极交迭的部分上导电膜，
其中该上导电膜具有水平线形式，并且该下导电膜具有L形形式。
2.根据权利要求1所述的修理工艺，其中所述熔断器还包括借助于接触电极连接至该上导电膜的金属焊垫。
CNB2005100544478A 2004-06-22 2005-03-10 半导体存储器件的熔断器及其修理工艺 Expired - Fee Related CN100463165C (zh)

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KR100909755B1 (ko) * 2007-10-31 2009-07-29 주식회사 하이닉스반도체 반도체소자의 퓨즈 및 그 형성방법
KR101052873B1 (ko) * 2008-11-06 2011-07-29 주식회사 하이닉스반도체 반도체 소자의 퓨즈 박스 및 이를 이용한 리페어 방법
CN113013140A (zh) * 2021-04-28 2021-06-22 上海华力微电子有限公司 efuse熔丝的版图结构

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US20020100956A1 (en) * 2001-01-30 2002-08-01 Brintzinger Axel Christoph Multi-level fuse structure
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CN1409396A (zh) * 2001-09-28 2003-04-09 惠普公司 垂直取向的超小型熔断器和超小型电阻器的电路元件
US20030095451A1 (en) * 2001-11-22 2003-05-22 Jeong-Ho Bang Laser link structure capable of preventing an upper crack and broadening an energy window of a laser beam, and fuse box using the same

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CN1713378A (zh) 2005-12-28
KR20050121589A (ko) 2005-12-27
KR100586548B1 (ko) 2006-06-08
US7977164B2 (en) 2011-07-12
US20050280047A1 (en) 2005-12-22
US20080273411A1 (en) 2008-11-06

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