CN100461347C - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN100461347C
CN100461347C CNB2006100879175A CN200610087917A CN100461347C CN 100461347 C CN100461347 C CN 100461347C CN B2006100879175 A CNB2006100879175 A CN B2006100879175A CN 200610087917 A CN200610087917 A CN 200610087917A CN 100461347 C CN100461347 C CN 100461347C
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CN
China
Prior art keywords
film
dielectric film
silicon oxide
polymer
polysilazane
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Expired - Fee Related
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CNB2006100879175A
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English (en)
Chinese (zh)
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CN1877795A (zh
Inventor
有隅修
清利正弘
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Toshiba Corp
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Toshiba Corp
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Publication of CN1877795A publication Critical patent/CN1877795A/zh
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Publication of CN100461347C publication Critical patent/CN100461347C/zh
Expired - Fee Related legal-status Critical Current
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    • H10P14/662—
    • H10W20/071—
    • H10W20/096—
    • H10W20/097—
    • H10W20/098—
    • H10P14/6336—
    • H10P14/6342—
    • H10P14/69215—
    • H10P14/6922—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Element Separation (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)
CNB2006100879175A 2005-06-07 2006-06-07 半导体器件及其制造方法 Expired - Fee Related CN100461347C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005166949A JP4509868B2 (ja) 2005-06-07 2005-06-07 半導体装置の製造方法
JP166949/2005 2005-06-07

Publications (2)

Publication Number Publication Date
CN1877795A CN1877795A (zh) 2006-12-13
CN100461347C true CN100461347C (zh) 2009-02-11

Family

ID=37510185

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100879175A Expired - Fee Related CN100461347C (zh) 2005-06-07 2006-06-07 半导体器件及其制造方法

Country Status (4)

Country Link
US (2) US7416955B2 (cg-RX-API-DMAC10.html)
JP (1) JP4509868B2 (cg-RX-API-DMAC10.html)
CN (1) CN100461347C (cg-RX-API-DMAC10.html)
TW (1) TW200707538A (cg-RX-API-DMAC10.html)

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JP5091428B2 (ja) * 2005-06-14 2012-12-05 株式会社東芝 半導体装置の製造方法
KR20080061022A (ko) * 2006-12-27 2008-07-02 동부일렉트로닉스 주식회사 플래시 메모리 소자의 제조 방법
US8084372B2 (en) * 2007-08-24 2011-12-27 Tokyo Electron Limited Substrate processing method and computer storage medium
US7867923B2 (en) * 2007-10-22 2011-01-11 Applied Materials, Inc. High quality silicon oxide films by remote plasma CVD from disilane precursors
GB2462589B (en) * 2008-08-04 2013-02-20 Sony Comp Entertainment Europe Apparatus and method of viewing electronic documents
KR20100027388A (ko) * 2008-09-02 2010-03-11 삼성전자주식회사 반도체 소자의 절연막 및 그를 이용한 반도체 소자의 형성방법
JP2010147241A (ja) * 2008-12-18 2010-07-01 Toshiba Corp 不揮発性半導体記憶装置
JP5184498B2 (ja) * 2009-12-10 2013-04-17 日本電信電話株式会社 成膜方法
US9285168B2 (en) 2010-10-05 2016-03-15 Applied Materials, Inc. Module for ozone cure and post-cure moisture treatment
US8664127B2 (en) 2010-10-15 2014-03-04 Applied Materials, Inc. Two silicon-containing precursors for gapfill enhancing dielectric liner
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US8716154B2 (en) 2011-03-04 2014-05-06 Applied Materials, Inc. Reduced pattern loading using silicon oxide multi-layers
US20120238108A1 (en) * 2011-03-14 2012-09-20 Applied Materials, Inc. Two-stage ozone cure for dielectric films
US9404178B2 (en) 2011-07-15 2016-08-02 Applied Materials, Inc. Surface treatment and deposition for reduced outgassing
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9768270B2 (en) * 2014-06-25 2017-09-19 Sandisk Technologies Llc Method of selectively depositing floating gate material in a memory device
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
CN106887430B (zh) 2015-12-10 2020-03-10 中芯国际集成电路制造(北京)有限公司 Nand闪存的形成方法
US9847245B1 (en) * 2016-06-16 2017-12-19 Samsung Electronics Co., Ltd. Filling processes
CN110211916B (zh) * 2019-04-15 2021-08-10 上海华力集成电路制造有限公司 浅沟槽隔离结构的制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172204A (en) * 1991-03-27 1992-12-15 International Business Machines Corp. Artificial ionic synapse
US5936291A (en) * 1997-02-03 1999-08-10 Sharp Kabushiki Kaisha Thin film transistor and method for fabricating the same
US20020017681A1 (en) * 2000-07-11 2002-02-14 Seiko Epson Corporation Semiconductor device and method of manufacture
JP2003051583A (ja) * 2001-05-30 2003-02-21 Matsushita Electric Ind Co Ltd 半導体記憶装置及びその製造方法

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JP3086926B2 (ja) * 1991-02-01 2000-09-11 科学技術振興事業団 酸化珪素膜の形成方法
US5448111A (en) * 1993-09-20 1995-09-05 Fujitsu Limited Semiconductor device and method for fabricating the same
US5492858A (en) * 1994-04-20 1996-02-20 Digital Equipment Corporation Shallow trench isolation process for high aspect ratio trenches
JPH08236502A (ja) * 1995-02-27 1996-09-13 Sony Corp 層間絶縁膜の平坦化方法及び半導体装置の製造方法
JP3447458B2 (ja) * 1996-03-21 2003-09-16 沖電気工業株式会社 半導体装置の製造方法
JP3178412B2 (ja) * 1998-04-27 2001-06-18 日本電気株式会社 トレンチ・アイソレーション構造の形成方法
TW379453B (en) * 1998-05-26 2000-01-11 United Microelectronics Corp Method of manufacturing buried gate
US6037275A (en) * 1998-08-27 2000-03-14 Alliedsignal Inc. Nanoporous silica via combined stream deposition
US6346490B1 (en) * 2000-04-05 2002-02-12 Lsi Logic Corporation Process for treating damaged surfaces of low k carbon doped silicon oxide dielectric material after plasma etching and plasma cleaning steps
US7270886B2 (en) * 2000-10-12 2007-09-18 Samsung Electronics Co., Ltd. Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same
JP2003031650A (ja) * 2001-07-13 2003-01-31 Toshiba Corp 半導体装置の製造方法
US6652612B2 (en) * 2001-11-15 2003-11-25 Catalysts & Chemicals Industries Co., Ltd. Silica particles for polishing and a polishing agent
JP2003258082A (ja) 2002-03-04 2003-09-12 Toshiba Corp 半導体装置の製造方法
JP4018596B2 (ja) * 2002-10-02 2007-12-05 株式会社東芝 半導体装置の製造方法
JP3699956B2 (ja) * 2002-11-29 2005-09-28 株式会社東芝 半導体装置の製造方法
JP4594648B2 (ja) * 2004-05-26 2010-12-08 株式会社東芝 半導体装置およびその製造方法
JP4607613B2 (ja) * 2005-02-09 2011-01-05 株式会社東芝 半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5172204A (en) * 1991-03-27 1992-12-15 International Business Machines Corp. Artificial ionic synapse
US5936291A (en) * 1997-02-03 1999-08-10 Sharp Kabushiki Kaisha Thin film transistor and method for fabricating the same
US20020017681A1 (en) * 2000-07-11 2002-02-14 Seiko Epson Corporation Semiconductor device and method of manufacture
JP2003051583A (ja) * 2001-05-30 2003-02-21 Matsushita Electric Ind Co Ltd 半導体記憶装置及びその製造方法

Also Published As

Publication number Publication date
US20090206409A1 (en) 2009-08-20
CN1877795A (zh) 2006-12-13
TWI299180B (cg-RX-API-DMAC10.html) 2008-07-21
US20060281336A1 (en) 2006-12-14
US7416955B2 (en) 2008-08-26
JP4509868B2 (ja) 2010-07-21
TW200707538A (en) 2007-02-16
US7884413B2 (en) 2011-02-08
JP2006344659A (ja) 2006-12-21

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Granted publication date: 20090211

Termination date: 20130607