CN100444308C - 宽温度范围的卡盘系统 - Google Patents

宽温度范围的卡盘系统 Download PDF

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Publication number
CN100444308C
CN100444308C CNB2004800119231A CN200480011923A CN100444308C CN 100444308 C CN100444308 C CN 100444308C CN B2004800119231 A CNB2004800119231 A CN B2004800119231A CN 200480011923 A CN200480011923 A CN 200480011923A CN 100444308 C CN100444308 C CN 100444308C
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CN
China
Prior art keywords
chuck
temperature
workpiece
heat exchange
cold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB2004800119231A
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English (en)
Chinese (zh)
Other versions
CN1784765A (zh
Inventor
A·王
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Axcelis Technologies Inc
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Axcelis Technologies Inc
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Publication date
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Publication of CN1784765A publication Critical patent/CN1784765A/zh
Application granted granted Critical
Publication of CN100444308C publication Critical patent/CN100444308C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
CNB2004800119231A 2003-05-07 2004-05-06 宽温度范围的卡盘系统 Expired - Fee Related CN100444308C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US46905003P 2003-05-07 2003-05-07
US60/469,050 2003-05-07

Publications (2)

Publication Number Publication Date
CN1784765A CN1784765A (zh) 2006-06-07
CN100444308C true CN100444308C (zh) 2008-12-17

Family

ID=33452253

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004800119231A Expired - Fee Related CN100444308C (zh) 2003-05-07 2004-05-06 宽温度范围的卡盘系统

Country Status (8)

Country Link
US (1) US20050008983A1 (enExample)
EP (1) EP1623452B1 (enExample)
JP (1) JP2007515781A (enExample)
KR (1) KR20060038925A (enExample)
CN (1) CN100444308C (enExample)
DE (1) DE602004003365T2 (enExample)
TW (1) TW200428468A (enExample)
WO (1) WO2004102640A1 (enExample)

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KR100459788B1 (ko) * 2002-01-14 2004-12-04 주성엔지니어링(주) 2단 웨이퍼 리프트 핀
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
WO2007116492A1 (ja) * 2006-03-31 2007-10-18 Fujitsu Microelectronics Limited 半導体装置の製造方法
US20080121821A1 (en) * 2006-11-27 2008-05-29 Varian Semiconductor Equipment Associates Inc. Techniques for low-temperature ion implantation
US7528391B2 (en) 2006-12-22 2009-05-05 Varian Semiconductor Equipment Associates, Inc. Techniques for reducing contamination during ion implantation
JP4949091B2 (ja) * 2007-03-16 2012-06-06 東京エレクトロン株式会社 基板処理装置、基板処理方法および記録媒体
JP2008235315A (ja) * 2007-03-16 2008-10-02 Tokyo Electron Ltd 基板処理装置、基板処理方法および記録媒体
JP5262412B2 (ja) * 2008-08-07 2013-08-14 シンフォニアテクノロジー株式会社 真空処理装置
NL2004242A (en) 2009-04-13 2010-10-14 Asml Netherlands Bv Detector module, cooling arrangement and lithographic apparatus comprising a detector module.
NL2004322A (en) * 2009-04-13 2010-10-14 Asml Netherlands Bv Cooling device, cooling arrangement and lithographic apparatus comprising a cooling arrangement.
JP5570938B2 (ja) * 2009-12-11 2014-08-13 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法
US20110143548A1 (en) * 2009-12-11 2011-06-16 David Cheung Ultra low silicon loss high dose implant strip
FR2960816B1 (fr) * 2010-06-02 2012-07-13 Sidel Participations Four pour le conditionnement thermique de preformes et procede de commande d'un dispositif de refroidissement par air equipant un tel four
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
CN103426793B (zh) * 2012-05-24 2016-02-03 沈阳芯源微电子设备有限公司 基板冷热处理装置
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
US12255123B2 (en) 2015-09-30 2025-03-18 Microfabrica Inc. Micro heat transfer arrays, micro cold plates, and thermal management systems for semiconductor devices, and methods for using and making such arrays, plates, and systems
JP6614933B2 (ja) * 2015-11-11 2019-12-04 東京エレクトロン株式会社 基板載置機構および基板処理装置
JP2019507088A (ja) * 2016-01-28 2019-03-14 コーニング インコーポレイテッド 液体伝導を使用してガラスを熱的にテンパリングするための装置
JP6997108B2 (ja) 2016-06-02 2022-01-17 アクセリス テクノロジーズ， インコーポレイテッド ウェハ冷却方法
US12420314B2 (en) * 2019-10-18 2025-09-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor cleaning apparatus and method
CN110911320B (zh) * 2019-12-09 2023-08-18 北京北方华创微电子装备有限公司 冷却装置及其控制方法、半导体加工设备
US10866036B1 (en) 2020-05-18 2020-12-15 Envertic Thermal Systems, Llc Thermal switch

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001139379A (ja) * 1999-11-09 2001-05-22 Toshiba Ceramics Co Ltd 高熱伝導性窒化アルミニウム焼結体の製造方法
CN1297670A (zh) * 1998-03-05 2001-05-30 Fsi国际公司 包含低热质量导热烘烤盘的合成烘烤/冷却装置
US6409932B2 (en) * 2000-04-03 2002-06-25 Matrix Integrated Systems, Inc. Method and apparatus for increased workpiece throughput
US6461801B1 (en) * 1999-05-27 2002-10-08 Matrix Integrated Systems, Inc. Rapid heating and cooling of workpiece chucks
US6495802B1 (en) * 2001-05-31 2002-12-17 Motorola, Inc. Temperature-controlled chuck and method for controlling the temperature of a substantially flat object

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
US3602687A (en) * 1969-06-23 1971-08-31 Battelle Development Corp Arc length control
US4609037A (en) * 1985-10-09 1986-09-02 Tencor Instruments Apparatus for heating and cooling articles
JP2987085B2 (ja) * 1995-06-28 1999-12-06 日本碍子株式会社 半導体ウエハー保持装置、その製造方法およびその使用方法
JPH0997830A (ja) * 1995-07-21 1997-04-08 Fuji Electric Co Ltd 静電チャックホールダ、ウエハ保持機構ならびにその使用方法
KR100443415B1 (ko) * 1996-02-23 2004-11-03 동경 엘렉트론 주식회사 열처리장치
JPH10294275A (ja) * 1997-04-17 1998-11-04 Dainippon Screen Mfg Co Ltd 熱処理装置および熱処理方法
EP0915499B1 (en) * 1997-11-05 2011-03-23 Tokyo Electron Limited Semiconductor wafer holding apparatus
US6203657B1 (en) * 1998-03-31 2001-03-20 Lam Research Corporation Inductively coupled plasma downstream strip module
US6506291B2 (en) * 2001-06-14 2003-01-14 Applied Materials, Inc. Substrate support with multilevel heat transfer mechanism
US6490145B1 (en) * 2001-07-18 2002-12-03 Applied Materials, Inc. Substrate support pedestal
US6771086B2 (en) * 2002-02-19 2004-08-03 Lucas/Signatone Corporation Semiconductor wafer electrical testing with a mobile chiller plate for rapid and precise test temperature control

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1297670A (zh) * 1998-03-05 2001-05-30 Fsi国际公司 包含低热质量导热烘烤盘的合成烘烤/冷却装置
US6461801B1 (en) * 1999-05-27 2002-10-08 Matrix Integrated Systems, Inc. Rapid heating and cooling of workpiece chucks
JP2001139379A (ja) * 1999-11-09 2001-05-22 Toshiba Ceramics Co Ltd 高熱伝導性窒化アルミニウム焼結体の製造方法
US6409932B2 (en) * 2000-04-03 2002-06-25 Matrix Integrated Systems, Inc. Method and apparatus for increased workpiece throughput
US20020153099A1 (en) * 2000-04-03 2002-10-24 Albert Wang Apparatus for increased workpiece throughput
US6495802B1 (en) * 2001-05-31 2002-12-17 Motorola, Inc. Temperature-controlled chuck and method for controlling the temperature of a substantially flat object

Also Published As

Publication number Publication date
EP1623452B1 (en) 2006-11-22
JP2007515781A (ja) 2007-06-14
CN1784765A (zh) 2006-06-07
WO2004102640A1 (en) 2004-11-25
KR20060038925A (ko) 2006-05-04
DE602004003365T2 (de) 2007-09-13
US20050008983A1 (en) 2005-01-13
DE602004003365D1 (de) 2007-01-04
EP1623452A1 (en) 2006-02-08
TW200428468A (en) 2004-12-16

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Granted publication date: 20081217

Termination date: 20100506