CN100414672C - 等离子体处理方法及等离子体处理装置 - Google Patents

等离子体处理方法及等离子体处理装置 Download PDF

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Publication number
CN100414672C
CN100414672C CNB038206455A CN03820645A CN100414672C CN 100414672 C CN100414672 C CN 100414672C CN B038206455 A CNB038206455 A CN B038206455A CN 03820645 A CN03820645 A CN 03820645A CN 100414672 C CN100414672 C CN 100414672C
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China
Prior art keywords
plasma
substrate
processed
applying
electrostatic chuck
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Expired - Lifetime
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CNB038206455A
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English (en)
Chinese (zh)
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CN1679148A (zh
Inventor
进藤俊彦
冈本晋
樋口公博
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN1679148A publication Critical patent/CN1679148A/zh
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Publication of CN100414672C publication Critical patent/CN100414672C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CNB038206455A 2002-08-30 2003-08-28 等离子体处理方法及等离子体处理装置 Expired - Lifetime CN100414672C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002256096A JP4322484B2 (ja) 2002-08-30 2002-08-30 プラズマ処理方法及びプラズマ処理装置
JP256096/2002 2002-08-30

Publications (2)

Publication Number Publication Date
CN1679148A CN1679148A (zh) 2005-10-05
CN100414672C true CN100414672C (zh) 2008-08-27

Family

ID=31972935

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038206455A Expired - Lifetime CN100414672C (zh) 2002-08-30 2003-08-28 等离子体处理方法及等离子体处理装置

Country Status (6)

Country Link
JP (1) JP4322484B2 (enExample)
KR (1) KR100782621B1 (enExample)
CN (1) CN100414672C (enExample)
AU (1) AU2003261790A1 (enExample)
TW (1) TW200410332A (enExample)
WO (1) WO2004021427A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7205250B2 (en) * 2003-03-18 2007-04-17 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
US7316785B2 (en) * 2004-06-30 2008-01-08 Lam Research Corporation Methods and apparatus for the optimization of etch resistance in a plasma processing system
JP4704087B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
CN100416758C (zh) * 2005-12-09 2008-09-03 北京北方微电子基地设备工艺研究中心有限责任公司 一种在晶片刻蚀设备中彻底释放静电卡盘静电的方法
CN101740340B (zh) * 2008-11-25 2011-12-21 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室及半导体加工设备
JP2010199310A (ja) * 2009-02-25 2010-09-09 Sharp Corp プラズマエッチング方法
JP5835985B2 (ja) * 2010-09-16 2015-12-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20120154974A1 (en) * 2010-12-16 2012-06-21 Applied Materials, Inc. High efficiency electrostatic chuck assembly for semiconductor wafer processing
WO2014049915A1 (ja) * 2012-09-26 2014-04-03 シャープ株式会社 基板処理装置および基板処理方法、半導体装置の製造方法
TWI595557B (zh) * 2014-02-28 2017-08-11 愛發科股份有限公司 電漿蝕刻方法、電漿蝕刻裝置、電漿處理方法以及電漿處理裝置
JP6558901B2 (ja) * 2015-01-06 2019-08-14 東京エレクトロン株式会社 プラズマ処理方法
JP6595334B2 (ja) * 2015-12-28 2019-10-23 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
US10078266B2 (en) * 2016-02-26 2018-09-18 Mattson Technology, Inc. Implanted photoresist stripping process
US10535505B2 (en) * 2016-11-11 2020-01-14 Lam Research Corporation Plasma light up suppression
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
SG11202105295TA (en) * 2018-12-13 2021-06-29 Applied Materials Inc Methods for depositing phosphorus-doped silicon nitride films
KR20210140778A (ko) 2019-04-15 2021-11-23 어플라이드 머티어리얼스, 인코포레이티드 정전식 척킹 프로세스
JP7482657B2 (ja) * 2020-03-17 2024-05-14 東京エレクトロン株式会社 クリーニング方法及び半導体装置の製造方法
CN113154610A (zh) * 2021-05-31 2021-07-23 北京十三和科技发展有限公司 一种具有温度调节功能的空气净化器
JP7631172B2 (ja) * 2021-11-01 2025-02-18 東京エレクトロン株式会社 クリーニング方法、基板の処理方法及びプラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318552A (ja) * 1993-05-10 1994-11-15 Nissin Electric Co Ltd プラズマ処理方法及び装置
JPH1027780A (ja) * 1996-07-10 1998-01-27 Nec Corp プラズマ処理方法
JPH10199965A (ja) * 1997-01-10 1998-07-31 Shibaura Eng Works Co Ltd 真空処理装置の静電チャック装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100635975B1 (ko) * 2000-02-14 2006-10-20 동경 엘렉트론 주식회사 플라즈마 처리 장치 및 방법과, 플라즈마 처리 장치용 링 부재

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318552A (ja) * 1993-05-10 1994-11-15 Nissin Electric Co Ltd プラズマ処理方法及び装置
JPH1027780A (ja) * 1996-07-10 1998-01-27 Nec Corp プラズマ処理方法
JPH10199965A (ja) * 1997-01-10 1998-07-31 Shibaura Eng Works Co Ltd 真空処理装置の静電チャック装置

Also Published As

Publication number Publication date
KR100782621B1 (ko) 2007-12-06
AU2003261790A1 (en) 2004-03-19
CN1679148A (zh) 2005-10-05
TWI324361B (enExample) 2010-05-01
WO2004021427A1 (ja) 2004-03-11
JP2004095909A (ja) 2004-03-25
JP4322484B2 (ja) 2009-09-02
TW200410332A (en) 2004-06-16
KR20050058464A (ko) 2005-06-16

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Granted publication date: 20080827