CN100414672C - 等离子体处理方法及等离子体处理装置 - Google Patents

等离子体处理方法及等离子体处理装置 Download PDF

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Publication number
CN100414672C
CN100414672C CNB038206455A CN03820645A CN100414672C CN 100414672 C CN100414672 C CN 100414672C CN B038206455 A CNB038206455 A CN B038206455A CN 03820645 A CN03820645 A CN 03820645A CN 100414672 C CN100414672 C CN 100414672C
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China
Prior art keywords
plasma
substrate
processed
applying
electrostatic chuck
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Expired - Lifetime
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CNB038206455A
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English (en)
Chinese (zh)
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CN1679148A (zh
Inventor
进藤俊彦
冈本晋
樋口公博
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN1679148A publication Critical patent/CN1679148A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H10P50/242—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CNB038206455A 2002-08-30 2003-08-28 等离子体处理方法及等离子体处理装置 Expired - Lifetime CN100414672C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002256096A JP4322484B2 (ja) 2002-08-30 2002-08-30 プラズマ処理方法及びプラズマ処理装置
JP256096/2002 2002-08-30

Publications (2)

Publication Number Publication Date
CN1679148A CN1679148A (zh) 2005-10-05
CN100414672C true CN100414672C (zh) 2008-08-27

Family

ID=31972935

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038206455A Expired - Lifetime CN100414672C (zh) 2002-08-30 2003-08-28 等离子体处理方法及等离子体处理装置

Country Status (6)

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JP (1) JP4322484B2 (enExample)
KR (1) KR100782621B1 (enExample)
CN (1) CN100414672C (enExample)
AU (1) AU2003261790A1 (enExample)
TW (1) TW200410332A (enExample)
WO (1) WO2004021427A1 (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7205250B2 (en) * 2003-03-18 2007-04-17 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
US7316785B2 (en) * 2004-06-30 2008-01-08 Lam Research Corporation Methods and apparatus for the optimization of etch resistance in a plasma processing system
JP4704087B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
CN100416758C (zh) * 2005-12-09 2008-09-03 北京北方微电子基地设备工艺研究中心有限责任公司 一种在晶片刻蚀设备中彻底释放静电卡盘静电的方法
CN101740340B (zh) * 2008-11-25 2011-12-21 北京北方微电子基地设备工艺研究中心有限责任公司 反应腔室及半导体加工设备
JP2010199310A (ja) * 2009-02-25 2010-09-09 Sharp Corp プラズマエッチング方法
JP5835985B2 (ja) * 2010-09-16 2015-12-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20120154974A1 (en) * 2010-12-16 2012-06-21 Applied Materials, Inc. High efficiency electrostatic chuck assembly for semiconductor wafer processing
WO2014049915A1 (ja) * 2012-09-26 2014-04-03 シャープ株式会社 基板処理装置および基板処理方法、半導体装置の製造方法
CN105103274B (zh) * 2014-02-28 2016-12-14 株式会社爱发科 等离子体蚀刻方法、等离子体蚀刻装置、等离子体处理方法及等离子体处理装置
JP6558901B2 (ja) 2015-01-06 2019-08-14 東京エレクトロン株式会社 プラズマ処理方法
JP6595334B2 (ja) * 2015-12-28 2019-10-23 株式会社日立ハイテクノロジーズ プラズマ処理装置及びプラズマ処理方法
WO2017147365A1 (en) * 2016-02-26 2017-08-31 Mattson Technology, Inc. Implanted photoresist stripping process
US10535505B2 (en) * 2016-11-11 2020-01-14 Lam Research Corporation Plasma light up suppression
US20190119815A1 (en) * 2017-10-24 2019-04-25 Applied Materials, Inc. Systems and processes for plasma filtering
US20200190664A1 (en) * 2018-12-13 2020-06-18 Applied Materials, Inc. Methods for depositing phosphorus-doped silicon nitride films
TWI869392B (zh) 2019-04-15 2025-01-11 美商應用材料股份有限公司 處理基板的方法
JP7482657B2 (ja) 2020-03-17 2024-05-14 東京エレクトロン株式会社 クリーニング方法及び半導体装置の製造方法
CN113154610A (zh) * 2021-05-31 2021-07-23 北京十三和科技发展有限公司 一种具有温度调节功能的空气净化器
JP7631172B2 (ja) * 2021-11-01 2025-02-18 東京エレクトロン株式会社 クリーニング方法、基板の処理方法及びプラズマ処理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318552A (ja) * 1993-05-10 1994-11-15 Nissin Electric Co Ltd プラズマ処理方法及び装置
JPH1027780A (ja) * 1996-07-10 1998-01-27 Nec Corp プラズマ処理方法
JPH10199965A (ja) * 1997-01-10 1998-07-31 Shibaura Eng Works Co Ltd 真空処理装置の静電チャック装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100635975B1 (ko) * 2000-02-14 2006-10-20 동경 엘렉트론 주식회사 플라즈마 처리 장치 및 방법과, 플라즈마 처리 장치용 링 부재

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06318552A (ja) * 1993-05-10 1994-11-15 Nissin Electric Co Ltd プラズマ処理方法及び装置
JPH1027780A (ja) * 1996-07-10 1998-01-27 Nec Corp プラズマ処理方法
JPH10199965A (ja) * 1997-01-10 1998-07-31 Shibaura Eng Works Co Ltd 真空処理装置の静電チャック装置

Also Published As

Publication number Publication date
AU2003261790A1 (en) 2004-03-19
TW200410332A (en) 2004-06-16
CN1679148A (zh) 2005-10-05
JP2004095909A (ja) 2004-03-25
TWI324361B (enExample) 2010-05-01
JP4322484B2 (ja) 2009-09-02
KR100782621B1 (ko) 2007-12-06
KR20050058464A (ko) 2005-06-16
WO2004021427A1 (ja) 2004-03-11

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Granted publication date: 20080827