CN100397674C - 具有磁场衰减层的磁控电阻存储器件 - Google Patents

具有磁场衰减层的磁控电阻存储器件 Download PDF

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Publication number
CN100397674C
CN100397674C CNB031201474A CN03120147A CN100397674C CN 100397674 C CN100397674 C CN 100397674C CN B031201474 A CNB031201474 A CN B031201474A CN 03120147 A CN03120147 A CN 03120147A CN 100397674 C CN100397674 C CN 100397674C
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China
Prior art keywords
layer
magnetic
pinned
attenuation
detection
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Expired - Lifetime
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CNB031201474A
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English (en)
Chinese (zh)
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CN1455463A (zh
Inventor
M·沙马
T·C·安东尼
M·巴塔查里亚
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN1455463A publication Critical patent/CN1455463A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
CNB031201474A 2002-04-29 2003-03-10 具有磁场衰减层的磁控电阻存储器件 Expired - Lifetime CN100397674C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/135,241 US6794695B2 (en) 2002-04-29 2002-04-29 Magneto resistive storage device having a magnetic field sink layer
US10/135241 2002-04-29

Publications (2)

Publication Number Publication Date
CN1455463A CN1455463A (zh) 2003-11-12
CN100397674C true CN100397674C (zh) 2008-06-25

Family

ID=29215644

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB031201474A Expired - Lifetime CN100397674C (zh) 2002-04-29 2003-03-10 具有磁场衰减层的磁控电阻存储器件

Country Status (7)

Country Link
US (2) US6794695B2 (enExample)
EP (1) EP1359590B1 (enExample)
JP (1) JP2004006844A (enExample)
KR (1) KR100969285B1 (enExample)
CN (1) CN100397674C (enExample)
DE (1) DE60301294T2 (enExample)
TW (1) TW200305977A (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6794695B2 (en) * 2002-04-29 2004-09-21 Hewlett-Packard Development Company, L.P. Magneto resistive storage device having a magnetic field sink layer
US6956257B2 (en) * 2002-11-18 2005-10-18 Carnegie Mellon University Magnetic memory element and memory device including same
US7072209B2 (en) * 2003-12-29 2006-07-04 Micron Technology, Inc. Magnetic memory having synthetic antiferromagnetic pinned layer
US6980455B2 (en) * 2004-02-03 2005-12-27 Hewlett-Packard Development Company, L.P. Remote sensed pre-amplifier for cross-point arrays
US7193889B2 (en) * 2004-02-11 2007-03-20 Hewlett-Packard Development Company, Lp. Switching of MRAM devices having soft magnetic reference layers
WO2005088745A1 (ja) * 2004-03-12 2005-09-22 Japan Science And Technology Agency 磁気抵抗素子及びその製造方法
US7172786B2 (en) * 2004-05-14 2007-02-06 Hitachi Global Storage Technologies Netherlands B.V. Methods for improving positioning performance of electron beam lithography on magnetic wafers
US7611912B2 (en) * 2004-06-30 2009-11-03 Headway Technologies, Inc. Underlayer for high performance magnetic tunneling junction MRAM
US7646568B2 (en) * 2005-12-23 2010-01-12 Headway Technologies, Inc. Ultra thin seed layer for CPP or TMR structure
US9136463B2 (en) * 2007-11-20 2015-09-15 Qualcomm Incorporated Method of forming a magnetic tunnel junction structure
US7826258B2 (en) * 2008-03-24 2010-11-02 Carnegie Mellon University Crossbar diode-switched magnetoresistive random access memory system
US8587993B2 (en) 2009-03-02 2013-11-19 Qualcomm Incorporated Reducing source loading effect in spin torque transfer magnetoresisitive random access memory (STT-MRAM)
US8148174B1 (en) * 2011-05-03 2012-04-03 Avalanche Technology, Inc. Magnetic tunnel junction (MTJ) formation with two-step process
US8313960B1 (en) * 2011-05-03 2012-11-20 Avalanche Technology, Inc. Magnetic tunnel junction (MTJ) formation using multiple etching processes
KR101849677B1 (ko) * 2011-05-19 2018-04-19 삼성전자주식회사 자기 터널 접합 소자
US9343656B2 (en) * 2012-03-02 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic tunnel junction (MTJ) structure in magnetic random access memory
US8900884B2 (en) * 2012-06-18 2014-12-02 Headway Technologies, Inc. MTJ element for STT MRAM
EP2741296B1 (en) * 2012-12-07 2019-01-30 Crocus Technology S.A. Self-referenced magnetic random access memory (MRAM) and method for writing to the MRAM cell with increased reliability and reduced power consumption
KR20150103527A (ko) 2014-03-03 2015-09-11 에스케이하이닉스 주식회사 전자 장치
US9734850B1 (en) 2016-06-28 2017-08-15 Western Digital Technologies, Inc. Magnetic tunnel junction (MTJ) free layer damping reduction
US10534047B2 (en) * 2017-03-30 2020-01-14 Qualcomm Incorporated Tunnel magneto-resistive (TMR) sensors employing TMR devices with different magnetic field sensitivities for increased detection sensitivity
JP2020042882A (ja) * 2018-09-12 2020-03-19 キオクシア株式会社 磁気メモリ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5902690A (en) * 1997-02-25 1999-05-11 Motorola, Inc. Stray magnetic shielding for a non-volatile MRAM
EP1132918A2 (en) * 2000-02-29 2001-09-12 Hewlett-Packard Company Improved reference layer structure in a magnetic storage cell

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2538645B1 (fr) 1982-12-28 1986-04-11 Thomson Csf Procede et dispositif d'interpolation de la parole dans un systeme de transmission de parole numerisee
US5764567A (en) * 1996-11-27 1998-06-09 International Business Machines Corporation Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
US5801984A (en) * 1996-11-27 1998-09-01 International Business Machines Corporation Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment
US6259644B1 (en) 1997-11-20 2001-07-10 Hewlett-Packard Co Equipotential sense methods for resistive cross point memory cell arrays
US6127053A (en) * 1998-05-27 2000-10-03 International Business Machines Corporation Spin valves with high uniaxial anisotropy reference and keeper layers
JP2001006126A (ja) * 1999-06-17 2001-01-12 Nec Corp 磁気抵抗効果ヘッド及びそのヘッドを備えた磁気抵抗検出システム並びにそのヘッドを備えた磁気記憶システム
US6292389B1 (en) 1999-07-19 2001-09-18 Motorola, Inc. Magnetic element with improved field response and fabricating method thereof
JP3593652B2 (ja) * 2000-03-03 2004-11-24 富士通株式会社 磁気ランダムアクセスメモリ装置
US6429497B1 (en) * 2000-11-18 2002-08-06 Hewlett-Packard Company Method for improving breakdown voltage in magnetic tunnel junctions
TW560095B (en) * 2001-04-02 2003-11-01 Canon Kk Magnetoresistive element, memory element having the magnetoresistive element, and memory using the memory element
DE10142594A1 (de) 2001-08-31 2003-03-27 Infineon Technologies Ag Kompensation eines magnetischen Biasfeldes in einer Speicherschicht einer magnetoresistiven Speicherzelle
US6794695B2 (en) * 2002-04-29 2004-09-21 Hewlett-Packard Development Company, L.P. Magneto resistive storage device having a magnetic field sink layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5902690A (en) * 1997-02-25 1999-05-11 Motorola, Inc. Stray magnetic shielding for a non-volatile MRAM
EP1132918A2 (en) * 2000-02-29 2001-09-12 Hewlett-Packard Company Improved reference layer structure in a magnetic storage cell

Also Published As

Publication number Publication date
US20040090842A1 (en) 2004-05-13
TW200305977A (en) 2003-11-01
US20030202375A1 (en) 2003-10-30
KR20030085496A (ko) 2003-11-05
EP1359590A1 (en) 2003-11-05
DE60301294T2 (de) 2006-08-10
CN1455463A (zh) 2003-11-12
US6919594B2 (en) 2005-07-19
EP1359590B1 (en) 2005-08-17
US6794695B2 (en) 2004-09-21
KR100969285B1 (ko) 2010-07-09
DE60301294D1 (de) 2005-09-22
JP2004006844A (ja) 2004-01-08

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Address after: Gyeonggi Do, South Korea

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Granted publication date: 20080625

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