TW200305977A - Magneto resistive storage device having a magnetic field sink layer - Google Patents
Magneto resistive storage device having a magnetic field sink layer Download PDFInfo
- Publication number
- TW200305977A TW200305977A TW091136373A TW91136373A TW200305977A TW 200305977 A TW200305977 A TW 200305977A TW 091136373 A TW091136373 A TW 091136373A TW 91136373 A TW91136373 A TW 91136373A TW 200305977 A TW200305977 A TW 200305977A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- magnetic
- positioning
- forming
- magnetic field
- Prior art date
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 144
- 238000003860 storage Methods 0.000 title description 18
- 230000004888 barrier function Effects 0.000 claims description 81
- 238000004062 sedimentation Methods 0.000 claims description 42
- 230000015654 memory Effects 0.000 claims description 38
- 230000006698 induction Effects 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 5
- 239000003302 ferromagnetic material Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims description 2
- 230000005426 magnetic field effect Effects 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 3
- 230000005415 magnetization Effects 0.000 description 25
- 239000004020 conductor Substances 0.000 description 16
- 230000005294 ferromagnetic effect Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 230000005290 antiferromagnetic effect Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 239000013598 vector Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910003321 CoFe Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000006403 short-term memory Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- -1 spacer metals Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Hall/Mr Elements (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/135,241 US6794695B2 (en) | 2002-04-29 | 2002-04-29 | Magneto resistive storage device having a magnetic field sink layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200305977A true TW200305977A (en) | 2003-11-01 |
Family
ID=29215644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091136373A TW200305977A (en) | 2002-04-29 | 2002-12-17 | Magneto resistive storage device having a magnetic field sink layer |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6794695B2 (enExample) |
| EP (1) | EP1359590B1 (enExample) |
| JP (1) | JP2004006844A (enExample) |
| KR (1) | KR100969285B1 (enExample) |
| CN (1) | CN100397674C (enExample) |
| DE (1) | DE60301294T2 (enExample) |
| TW (1) | TW200305977A (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6794695B2 (en) * | 2002-04-29 | 2004-09-21 | Hewlett-Packard Development Company, L.P. | Magneto resistive storage device having a magnetic field sink layer |
| US6956257B2 (en) * | 2002-11-18 | 2005-10-18 | Carnegie Mellon University | Magnetic memory element and memory device including same |
| US7072209B2 (en) * | 2003-12-29 | 2006-07-04 | Micron Technology, Inc. | Magnetic memory having synthetic antiferromagnetic pinned layer |
| US6980455B2 (en) * | 2004-02-03 | 2005-12-27 | Hewlett-Packard Development Company, L.P. | Remote sensed pre-amplifier for cross-point arrays |
| US7193889B2 (en) * | 2004-02-11 | 2007-03-20 | Hewlett-Packard Development Company, Lp. | Switching of MRAM devices having soft magnetic reference layers |
| US7884403B2 (en) * | 2004-03-12 | 2011-02-08 | Japan Science And Technology Agency | Magnetic tunnel junction device and memory device including the same |
| US7172786B2 (en) * | 2004-05-14 | 2007-02-06 | Hitachi Global Storage Technologies Netherlands B.V. | Methods for improving positioning performance of electron beam lithography on magnetic wafers |
| US7611912B2 (en) * | 2004-06-30 | 2009-11-03 | Headway Technologies, Inc. | Underlayer for high performance magnetic tunneling junction MRAM |
| US7646568B2 (en) * | 2005-12-23 | 2010-01-12 | Headway Technologies, Inc. | Ultra thin seed layer for CPP or TMR structure |
| US9136463B2 (en) * | 2007-11-20 | 2015-09-15 | Qualcomm Incorporated | Method of forming a magnetic tunnel junction structure |
| US7826258B2 (en) * | 2008-03-24 | 2010-11-02 | Carnegie Mellon University | Crossbar diode-switched magnetoresistive random access memory system |
| US8587993B2 (en) | 2009-03-02 | 2013-11-19 | Qualcomm Incorporated | Reducing source loading effect in spin torque transfer magnetoresisitive random access memory (STT-MRAM) |
| US8313960B1 (en) * | 2011-05-03 | 2012-11-20 | Avalanche Technology, Inc. | Magnetic tunnel junction (MTJ) formation using multiple etching processes |
| US8148174B1 (en) * | 2011-05-03 | 2012-04-03 | Avalanche Technology, Inc. | Magnetic tunnel junction (MTJ) formation with two-step process |
| KR101849677B1 (ko) * | 2011-05-19 | 2018-04-19 | 삼성전자주식회사 | 자기 터널 접합 소자 |
| US9343656B2 (en) * | 2012-03-02 | 2016-05-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetic tunnel junction (MTJ) structure in magnetic random access memory |
| US8900884B2 (en) * | 2012-06-18 | 2014-12-02 | Headway Technologies, Inc. | MTJ element for STT MRAM |
| EP2741296B1 (en) * | 2012-12-07 | 2019-01-30 | Crocus Technology S.A. | Self-referenced magnetic random access memory (MRAM) and method for writing to the MRAM cell with increased reliability and reduced power consumption |
| KR20150103527A (ko) | 2014-03-03 | 2015-09-11 | 에스케이하이닉스 주식회사 | 전자 장치 |
| US9734850B1 (en) | 2016-06-28 | 2017-08-15 | Western Digital Technologies, Inc. | Magnetic tunnel junction (MTJ) free layer damping reduction |
| US10534047B2 (en) * | 2017-03-30 | 2020-01-14 | Qualcomm Incorporated | Tunnel magneto-resistive (TMR) sensors employing TMR devices with different magnetic field sensitivities for increased detection sensitivity |
| JP2020042882A (ja) * | 2018-09-12 | 2020-03-19 | キオクシア株式会社 | 磁気メモリ |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2538645B1 (fr) | 1982-12-28 | 1986-04-11 | Thomson Csf | Procede et dispositif d'interpolation de la parole dans un systeme de transmission de parole numerisee |
| US5764567A (en) * | 1996-11-27 | 1998-06-09 | International Business Machines Corporation | Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response |
| US5801984A (en) * | 1996-11-27 | 1998-09-01 | International Business Machines Corporation | Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment |
| US5902690A (en) * | 1997-02-25 | 1999-05-11 | Motorola, Inc. | Stray magnetic shielding for a non-volatile MRAM |
| US6259644B1 (en) | 1997-11-20 | 2001-07-10 | Hewlett-Packard Co | Equipotential sense methods for resistive cross point memory cell arrays |
| US6127053A (en) * | 1998-05-27 | 2000-10-03 | International Business Machines Corporation | Spin valves with high uniaxial anisotropy reference and keeper layers |
| JP2001006126A (ja) * | 1999-06-17 | 2001-01-12 | Nec Corp | 磁気抵抗効果ヘッド及びそのヘッドを備えた磁気抵抗検出システム並びにそのヘッドを備えた磁気記憶システム |
| US6292389B1 (en) | 1999-07-19 | 2001-09-18 | Motorola, Inc. | Magnetic element with improved field response and fabricating method thereof |
| US6297983B1 (en) * | 2000-02-29 | 2001-10-02 | Hewlett-Packard Company | Reference layer structure in a magnetic storage cell |
| JP3593652B2 (ja) * | 2000-03-03 | 2004-11-24 | 富士通株式会社 | 磁気ランダムアクセスメモリ装置 |
| US6429497B1 (en) * | 2000-11-18 | 2002-08-06 | Hewlett-Packard Company | Method for improving breakdown voltage in magnetic tunnel junctions |
| TW560095B (en) * | 2001-04-02 | 2003-11-01 | Canon Kk | Magnetoresistive element, memory element having the magnetoresistive element, and memory using the memory element |
| DE10142594A1 (de) | 2001-08-31 | 2003-03-27 | Infineon Technologies Ag | Kompensation eines magnetischen Biasfeldes in einer Speicherschicht einer magnetoresistiven Speicherzelle |
| US6794695B2 (en) * | 2002-04-29 | 2004-09-21 | Hewlett-Packard Development Company, L.P. | Magneto resistive storage device having a magnetic field sink layer |
-
2002
- 2002-04-29 US US10/135,241 patent/US6794695B2/en not_active Expired - Lifetime
- 2002-12-17 TW TW091136373A patent/TW200305977A/zh unknown
-
2003
- 2003-03-10 CN CNB031201474A patent/CN100397674C/zh not_active Expired - Lifetime
- 2003-04-24 JP JP2003120171A patent/JP2004006844A/ja not_active Withdrawn
- 2003-04-24 DE DE60301294T patent/DE60301294T2/de not_active Expired - Lifetime
- 2003-04-24 EP EP03252587A patent/EP1359590B1/en not_active Expired - Lifetime
- 2003-04-28 KR KR1020030026705A patent/KR100969285B1/ko not_active Expired - Fee Related
- 2003-10-30 US US10/696,991 patent/US6919594B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CN1455463A (zh) | 2003-11-12 |
| DE60301294D1 (de) | 2005-09-22 |
| KR100969285B1 (ko) | 2010-07-09 |
| CN100397674C (zh) | 2008-06-25 |
| US6919594B2 (en) | 2005-07-19 |
| EP1359590A1 (en) | 2003-11-05 |
| DE60301294T2 (de) | 2006-08-10 |
| EP1359590B1 (en) | 2005-08-17 |
| US20040090842A1 (en) | 2004-05-13 |
| JP2004006844A (ja) | 2004-01-08 |
| KR20030085496A (ko) | 2003-11-05 |
| US6794695B2 (en) | 2004-09-21 |
| US20030202375A1 (en) | 2003-10-30 |
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