KR100969285B1 - 전자 장치, 메모리 장치, 자기 메모리 장치 어레이, 전자장치 제조 방법, 하부 구조 자기 메모리 장치 제조 방법및 상부 구조 자기 메모리 장치 제조 방법 - Google Patents

전자 장치, 메모리 장치, 자기 메모리 장치 어레이, 전자장치 제조 방법, 하부 구조 자기 메모리 장치 제조 방법및 상부 구조 자기 메모리 장치 제조 방법 Download PDF

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KR100969285B1
KR100969285B1 KR1020030026705A KR20030026705A KR100969285B1 KR 100969285 B1 KR100969285 B1 KR 100969285B1 KR 1020030026705 A KR1020030026705 A KR 1020030026705A KR 20030026705 A KR20030026705 A KR 20030026705A KR 100969285 B1 KR100969285 B1 KR 100969285B1
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layer
magnetic
sink
pinned
pinning
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KR20030085496A (ko
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샤르마매니쉬
안토니토마스씨
바타차야매노즈
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삼성전자주식회사
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Semiconductor Memories (AREA)
KR1020030026705A 2002-04-29 2003-04-28 전자 장치, 메모리 장치, 자기 메모리 장치 어레이, 전자장치 제조 방법, 하부 구조 자기 메모리 장치 제조 방법및 상부 구조 자기 메모리 장치 제조 방법 Expired - Fee Related KR100969285B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/135,241 US6794695B2 (en) 2002-04-29 2002-04-29 Magneto resistive storage device having a magnetic field sink layer
US10/135,241 2002-04-29

Publications (2)

Publication Number Publication Date
KR20030085496A KR20030085496A (ko) 2003-11-05
KR100969285B1 true KR100969285B1 (ko) 2010-07-09

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KR1020030026705A Expired - Fee Related KR100969285B1 (ko) 2002-04-29 2003-04-28 전자 장치, 메모리 장치, 자기 메모리 장치 어레이, 전자장치 제조 방법, 하부 구조 자기 메모리 장치 제조 방법및 상부 구조 자기 메모리 장치 제조 방법

Country Status (7)

Country Link
US (2) US6794695B2 (enExample)
EP (1) EP1359590B1 (enExample)
JP (1) JP2004006844A (enExample)
KR (1) KR100969285B1 (enExample)
CN (1) CN100397674C (enExample)
DE (1) DE60301294T2 (enExample)
TW (1) TW200305977A (enExample)

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US6794695B2 (en) * 2002-04-29 2004-09-21 Hewlett-Packard Development Company, L.P. Magneto resistive storage device having a magnetic field sink layer
US6956257B2 (en) * 2002-11-18 2005-10-18 Carnegie Mellon University Magnetic memory element and memory device including same
US7072209B2 (en) * 2003-12-29 2006-07-04 Micron Technology, Inc. Magnetic memory having synthetic antiferromagnetic pinned layer
US6980455B2 (en) * 2004-02-03 2005-12-27 Hewlett-Packard Development Company, L.P. Remote sensed pre-amplifier for cross-point arrays
US7193889B2 (en) * 2004-02-11 2007-03-20 Hewlett-Packard Development Company, Lp. Switching of MRAM devices having soft magnetic reference layers
US7884403B2 (en) * 2004-03-12 2011-02-08 Japan Science And Technology Agency Magnetic tunnel junction device and memory device including the same
US7172786B2 (en) * 2004-05-14 2007-02-06 Hitachi Global Storage Technologies Netherlands B.V. Methods for improving positioning performance of electron beam lithography on magnetic wafers
US7611912B2 (en) * 2004-06-30 2009-11-03 Headway Technologies, Inc. Underlayer for high performance magnetic tunneling junction MRAM
US7646568B2 (en) * 2005-12-23 2010-01-12 Headway Technologies, Inc. Ultra thin seed layer for CPP or TMR structure
US9136463B2 (en) * 2007-11-20 2015-09-15 Qualcomm Incorporated Method of forming a magnetic tunnel junction structure
US7826258B2 (en) * 2008-03-24 2010-11-02 Carnegie Mellon University Crossbar diode-switched magnetoresistive random access memory system
US8587993B2 (en) 2009-03-02 2013-11-19 Qualcomm Incorporated Reducing source loading effect in spin torque transfer magnetoresisitive random access memory (STT-MRAM)
US8313960B1 (en) * 2011-05-03 2012-11-20 Avalanche Technology, Inc. Magnetic tunnel junction (MTJ) formation using multiple etching processes
US8148174B1 (en) * 2011-05-03 2012-04-03 Avalanche Technology, Inc. Magnetic tunnel junction (MTJ) formation with two-step process
KR101849677B1 (ko) * 2011-05-19 2018-04-19 삼성전자주식회사 자기 터널 접합 소자
US9343656B2 (en) * 2012-03-02 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic tunnel junction (MTJ) structure in magnetic random access memory
US8900884B2 (en) * 2012-06-18 2014-12-02 Headway Technologies, Inc. MTJ element for STT MRAM
EP2741296B1 (en) * 2012-12-07 2019-01-30 Crocus Technology S.A. Self-referenced magnetic random access memory (MRAM) and method for writing to the MRAM cell with increased reliability and reduced power consumption
KR20150103527A (ko) 2014-03-03 2015-09-11 에스케이하이닉스 주식회사 전자 장치
US9734850B1 (en) 2016-06-28 2017-08-15 Western Digital Technologies, Inc. Magnetic tunnel junction (MTJ) free layer damping reduction
US10534047B2 (en) * 2017-03-30 2020-01-14 Qualcomm Incorporated Tunnel magneto-resistive (TMR) sensors employing TMR devices with different magnetic field sensitivities for increased detection sensitivity
JP2020042882A (ja) * 2018-09-12 2020-03-19 キオクシア株式会社 磁気メモリ

Citations (2)

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KR19980041891A (ko) * 1996-11-27 1998-08-17 포만제프리엘 자기 모멘트가 고정된 강자성 다층을 갖는 자기 터널 접속 장치
KR20010007425A (ko) * 1999-06-17 2001-01-26 가네꼬 히사시 자기저항헤드 및 이를 이용한 자기저항검출시스템 및자기기억시스템

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FR2538645B1 (fr) 1982-12-28 1986-04-11 Thomson Csf Procede et dispositif d'interpolation de la parole dans un systeme de transmission de parole numerisee
US5764567A (en) * 1996-11-27 1998-06-09 International Business Machines Corporation Magnetic tunnel junction device with nonferromagnetic interface layer for improved magnetic field response
US5902690A (en) * 1997-02-25 1999-05-11 Motorola, Inc. Stray magnetic shielding for a non-volatile MRAM
US6259644B1 (en) 1997-11-20 2001-07-10 Hewlett-Packard Co Equipotential sense methods for resistive cross point memory cell arrays
US6127053A (en) * 1998-05-27 2000-10-03 International Business Machines Corporation Spin valves with high uniaxial anisotropy reference and keeper layers
US6292389B1 (en) 1999-07-19 2001-09-18 Motorola, Inc. Magnetic element with improved field response and fabricating method thereof
US6297983B1 (en) * 2000-02-29 2001-10-02 Hewlett-Packard Company Reference layer structure in a magnetic storage cell
JP3593652B2 (ja) * 2000-03-03 2004-11-24 富士通株式会社 磁気ランダムアクセスメモリ装置
US6429497B1 (en) * 2000-11-18 2002-08-06 Hewlett-Packard Company Method for improving breakdown voltage in magnetic tunnel junctions
TW560095B (en) * 2001-04-02 2003-11-01 Canon Kk Magnetoresistive element, memory element having the magnetoresistive element, and memory using the memory element
DE10142594A1 (de) 2001-08-31 2003-03-27 Infineon Technologies Ag Kompensation eines magnetischen Biasfeldes in einer Speicherschicht einer magnetoresistiven Speicherzelle
US6794695B2 (en) * 2002-04-29 2004-09-21 Hewlett-Packard Development Company, L.P. Magneto resistive storage device having a magnetic field sink layer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980041891A (ko) * 1996-11-27 1998-08-17 포만제프리엘 자기 모멘트가 고정된 강자성 다층을 갖는 자기 터널 접속 장치
KR20010007425A (ko) * 1999-06-17 2001-01-26 가네꼬 히사시 자기저항헤드 및 이를 이용한 자기저항검출시스템 및자기기억시스템

Also Published As

Publication number Publication date
CN1455463A (zh) 2003-11-12
DE60301294D1 (de) 2005-09-22
CN100397674C (zh) 2008-06-25
US6919594B2 (en) 2005-07-19
EP1359590A1 (en) 2003-11-05
DE60301294T2 (de) 2006-08-10
EP1359590B1 (en) 2005-08-17
US20040090842A1 (en) 2004-05-13
JP2004006844A (ja) 2004-01-08
TW200305977A (en) 2003-11-01
KR20030085496A (ko) 2003-11-05
US6794695B2 (en) 2004-09-21
US20030202375A1 (en) 2003-10-30

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