CN100397576C - 薄膜半导体的制造方法及制造装置 - Google Patents

薄膜半导体的制造方法及制造装置 Download PDF

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Publication number
CN100397576C
CN100397576C CNB2004800012342A CN200480001234A CN100397576C CN 100397576 C CN100397576 C CN 100397576C CN B2004800012342 A CNB2004800012342 A CN B2004800012342A CN 200480001234 A CN200480001234 A CN 200480001234A CN 100397576 C CN100397576 C CN 100397576C
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China
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mentioned
laser
irradiation area
irradiation
pulsed laser
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Expired - Fee Related
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CNB2004800012342A
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English (en)
Chinese (zh)
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CN1706028A (zh
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井上满夫
时冈秀忠
由良信介
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
CNB2004800012342A 2003-08-22 2004-08-17 薄膜半导体的制造方法及制造装置 Expired - Fee Related CN100397576C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP298671/2003 2003-08-22
JP2003298671A JP4408668B2 (ja) 2003-08-22 2003-08-22 薄膜半導体の製造方法および製造装置

Publications (2)

Publication Number Publication Date
CN1706028A CN1706028A (zh) 2005-12-07
CN100397576C true CN100397576C (zh) 2008-06-25

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CNB2004800012342A Expired - Fee Related CN100397576C (zh) 2003-08-22 2004-08-17 薄膜半导体的制造方法及制造装置

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Country Link
US (1) US7223644B2 (https=)
JP (1) JP4408668B2 (https=)
CN (1) CN100397576C (https=)
WO (1) WO2005020301A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4408667B2 (ja) * 2003-08-22 2010-02-03 三菱電機株式会社 薄膜半導体の製造方法
US7812283B2 (en) 2004-03-26 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for fabricating semiconductor device
US8525075B2 (en) * 2004-05-06 2013-09-03 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus
CN100530549C (zh) * 2004-08-23 2009-08-19 株式会社半导体能源研究所 激光照射设备、照射方法和制备半导体器件的方法
US8395084B2 (en) * 2005-05-02 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and laser irradiation method
JP2009505432A (ja) * 2005-08-16 2009-02-05 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 薄膜のハイ・スループット結晶化
JP2007110064A (ja) * 2005-09-14 2007-04-26 Ishikawajima Harima Heavy Ind Co Ltd レーザアニール方法及び装置
JP4169073B2 (ja) * 2006-03-13 2008-10-22 ソニー株式会社 薄膜半導体装置および薄膜半導体装置の製造方法
KR100764424B1 (ko) * 2006-08-30 2007-10-05 삼성전기주식회사 파장변환 레이저 장치 및 이에 사용되는 비선형 광학결정
JP5053609B2 (ja) * 2006-09-29 2012-10-17 富士フイルム株式会社 レーザアニール技術、半導体膜、半導体装置、及び電気光学装置
JP5053610B2 (ja) * 2006-09-29 2012-10-17 富士フイルム株式会社 レーザアニール方法、半導体膜、半導体装置、及び電気光学装置
US7767595B2 (en) * 2006-10-26 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7972943B2 (en) * 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
CN100543934C (zh) * 2007-04-20 2009-09-23 余建军 制备大面积多晶硅方法
JP2008288508A (ja) 2007-05-21 2008-11-27 Shimadzu Corp 結晶化装置および結晶化方法
JP2008294186A (ja) 2007-05-24 2008-12-04 Shimadzu Corp 結晶化装置および結晶化方法
EP2317831A1 (en) 2009-10-30 2011-05-04 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Method and apparatus for curing a substance comprising a metal complex
WO2011127601A1 (en) * 2010-04-13 2011-10-20 National Research Council Of Canada Laser processing control method
CN103165422A (zh) * 2013-03-08 2013-06-19 上海和辉光电有限公司 以高能辐射源形成多晶硅的方法
JP2020112626A (ja) 2019-01-09 2020-07-27 住友電気工業株式会社 波長変換光デバイスおよびその製造方法
DE102020100100B4 (de) 2019-01-31 2024-06-27 Taiwan Semiconductor Manufacturing Co., Ltd. Gate-abstandshalterstrukturen und verfahren zu deren herstellung
US11437493B2 (en) 2019-01-31 2022-09-06 Taiwan Semiconductor Manufacturing Co., Ltd. Gate spacer structures and methods for forming the same
JP7466080B2 (ja) * 2021-09-02 2024-04-12 パナソニックＩｐマネジメント株式会社 レーザアニール装置及びレーザアニール方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012484A (ja) * 1998-06-25 2000-01-14 Mitsubishi Electric Corp レーザアニール装置
JP2001044120A (ja) * 1999-08-04 2001-02-16 Mitsubishi Electric Corp レーザ熱処理方法およびレーザ熱処理装置
JP2003068644A (ja) * 2001-08-28 2003-03-07 Sumitomo Heavy Ind Ltd シリコン結晶化方法とレーザアニール装置

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JP3204307B2 (ja) 1998-03-20 2001-09-04 日本電気株式会社 レーザ照射方法およびレーザ照射装置
JPH11298005A (ja) 1998-04-08 1999-10-29 Toshiba Corp 薄膜トランジスタ及び液晶表示装置の製造方法
JP3908405B2 (ja) 1999-03-31 2007-04-25 三菱電機株式会社 レーザ熱処理方法
TW445545B (en) 1999-03-10 2001-07-11 Mitsubishi Electric Corp Laser heat treatment method, laser heat treatment apparatus and semiconductor device
JP3422290B2 (ja) 1999-07-22 2003-06-30 日本電気株式会社 半導体薄膜の製造方法
US6770546B2 (en) * 2001-07-30 2004-08-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP2003168690A (ja) * 2001-11-30 2003-06-13 Seiko Epson Corp トランジスタ及びトランジスタの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000012484A (ja) * 1998-06-25 2000-01-14 Mitsubishi Electric Corp レーザアニール装置
JP2001044120A (ja) * 1999-08-04 2001-02-16 Mitsubishi Electric Corp レーザ熱処理方法およびレーザ熱処理装置
JP2003068644A (ja) * 2001-08-28 2003-03-07 Sumitomo Heavy Ind Ltd シリコン結晶化方法とレーザアニール装置

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Publication number Publication date
JP4408668B2 (ja) 2010-02-03
CN1706028A (zh) 2005-12-07
JP2005072183A (ja) 2005-03-17
WO2005020301A1 (ja) 2005-03-03
US7223644B2 (en) 2007-05-29
US20060051943A1 (en) 2006-03-09

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