CN100382230C - 硅电极及其生产方法、生产硅部件及加工半导体晶片方法 - Google Patents

硅电极及其生产方法、生产硅部件及加工半导体晶片方法 Download PDF

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Publication number
CN100382230C
CN100382230C CNB038112825A CN03811282A CN100382230C CN 100382230 C CN100382230 C CN 100382230C CN B038112825 A CNB038112825 A CN B038112825A CN 03811282 A CN03811282 A CN 03811282A CN 100382230 C CN100382230 C CN 100382230C
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CN
China
Prior art keywords
silicon
copper
silicon plate
plate
cut
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB038112825A
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English (en)
Chinese (zh)
Other versions
CN1653589A (zh
Inventor
任大星
杰罗姆·S·休贝塞克
尼古拉斯·E·韦伯
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Lam Research Corp
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Lam Research Corp
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Filing date
Publication date
Priority claimed from US10/247,722 external-priority patent/US6846726B2/en
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN1653589A publication Critical patent/CN1653589A/zh
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Publication of CN100382230C publication Critical patent/CN100382230C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
CNB038112825A 2002-04-17 2003-03-21 硅电极及其生产方法、生产硅部件及加工半导体晶片方法 Expired - Fee Related CN100382230C (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US37348902P 2002-04-17 2002-04-17
US60/373,489 2002-04-17
US10/247,722 US6846726B2 (en) 2002-04-17 2002-09-20 Silicon parts having reduced metallic impurity concentration for plasma reaction chambers
US10/247,722 2002-09-20
PCT/US2003/008702 WO2003090263A1 (en) 2002-04-17 2003-03-21 Silicon parts for plasma reaction chambers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CNA200810083894XA Division CN101241845A (zh) 2002-04-17 2003-03-21 等离子体反应室用硅部件

Publications (2)

Publication Number Publication Date
CN1653589A CN1653589A (zh) 2005-08-10
CN100382230C true CN100382230C (zh) 2008-04-16

Family

ID=32853019

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB038112825A Expired - Fee Related CN100382230C (zh) 2002-04-17 2003-03-21 硅电极及其生产方法、生产硅部件及加工半导体晶片方法

Country Status (9)

Country Link
EP (1) EP1497849B1 (enExample)
JP (2) JP4837894B2 (enExample)
KR (1) KR100954711B1 (enExample)
CN (1) CN100382230C (enExample)
AT (1) ATE472172T1 (enExample)
AU (1) AU2003220446A1 (enExample)
DE (1) DE60333088D1 (enExample)
IL (2) IL164439A0 (enExample)
TW (1) TWI279857B (enExample)

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* Cited by examiner, † Cited by third party
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US7482550B2 (en) * 2006-10-16 2009-01-27 Lam Research Corporation Quartz guard ring
JP2010519763A (ja) * 2007-02-22 2010-06-03 ハナ シリコン アイエヌシー プラズマ処理装置用シリコン素材の製造方法
US7942965B2 (en) * 2007-03-19 2011-05-17 Applied Materials, Inc. Method of fabricating plasma reactor parts
KR100922620B1 (ko) * 2007-08-24 2009-10-21 하나실리콘(주) 플라즈마 처리 장치용 실리콘 소재의 제조 방법
KR100922621B1 (ko) * 2007-08-24 2009-10-21 하나실리콘(주) 플라즈마 처리 장치용 실리콘 소재의 제조 방법
KR100918076B1 (ko) * 2007-08-24 2009-09-22 하나실리콘(주) 플라즈마 처리 장치용 실리콘 소재의 제조 방법
WO2009085163A1 (en) 2007-12-19 2009-07-09 Lam Research Corporation A composite showerhead electrode assembly for a plasma processing apparatus
US8449786B2 (en) 2007-12-19 2013-05-28 Lam Research Corporation Film adhesive for semiconductor vacuum processing apparatus
KR101485830B1 (ko) * 2013-12-30 2015-01-22 하나머티리얼즈(주) 내구성이 향상된 플라즈마 처리 장비용 단결정 실리콘 부품 및 이의 제조 방법
US9406534B2 (en) * 2014-09-17 2016-08-02 Lam Research Corporation Wet clean process for cleaning plasma processing chamber components
KR101984223B1 (ko) * 2014-10-22 2019-09-03 하나머티리얼즈(주) 반도체 공정용 플라즈마 장치의 일체형 상부 전극 및 이의 제조 방법
US9947558B2 (en) * 2016-08-12 2018-04-17 Lam Research Corporation Method for conditioning silicon part
EP3691814B1 (en) * 2017-10-05 2024-02-21 Lam Research Corporation Electromagnetic casting system and method including furnaces and molds for producing silicon tubes
CN111900071A (zh) * 2020-07-17 2020-11-06 上海富乐德智能科技发展有限公司 半导体设备蚀刻装置硅电极部件的再生方法
KR102468583B1 (ko) * 2021-04-14 2022-11-22 주식회사 케이엔제이 에지링 내경 가공장치 및 방법
KR102494678B1 (ko) * 2021-04-14 2023-02-06 주식회사 케이엔제이 에지링 가공 시스템 및 방법
KR102498344B1 (ko) * 2021-04-14 2023-02-10 주식회사 케이엔제이 에지링 외경 가공장치 및 방법

Citations (7)

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Publication number Priority date Publication date Assignee Title
CN86103233A (zh) * 1985-08-23 1987-02-18 英特尔公司 利用氟化气体混合物进行硅的等离子体蚀刻
US5712198A (en) * 1994-08-26 1998-01-27 Memc Electronic Materials, Inc. Pre-thermal treatment cleaning process
CN1181172A (zh) * 1994-12-22 1998-05-06 研究三角协会 等离子体处理装置和方法
CN1184555A (zh) * 1995-05-19 1998-06-10 兰姆研究公司 电极夹持组件和装配方法及其使用
WO2002003427A2 (en) * 2000-06-30 2002-01-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
US6376977B1 (en) * 1999-06-08 2002-04-23 Shin-Etsu Chemical Co., Ltd. Silicon electrode plate
US6416586B1 (en) * 1998-12-01 2002-07-09 Tadahiro Ohmi Cleaning method

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JPH033244A (ja) * 1989-05-30 1991-01-09 Shin Etsu Handotai Co Ltd 半導体シリコン基板の熱処理方法
JPH08236505A (ja) * 1995-02-28 1996-09-13 Sumitomo Sitix Corp プラズマエッチング装置用シリコン電極
JPH08274069A (ja) * 1995-03-30 1996-10-18 Sumitomo Sitix Corp プラズマエッチング装置用シリコン電極装置
JPH08274068A (ja) * 1995-03-30 1996-10-18 Sumitomo Sitix Corp プラズマエッチング装置用シリコン電極
JP2742247B2 (ja) * 1995-04-27 1998-04-22 信越半導体株式会社 シリコン単結晶基板の製造方法および品質管理方法
JP3789586B2 (ja) * 1996-03-04 2006-06-28 信越化学工業株式会社 静電チャック
JP3172671B2 (ja) * 1996-03-19 2001-06-04 信越化学工業株式会社 静電チャック
JPH1098015A (ja) * 1996-09-24 1998-04-14 Komatsu Ltd ワイヤーソーのエンドレス接合方法
JP3298467B2 (ja) * 1997-07-18 2002-07-02 信越半導体株式会社 エピタキシャルウェーハの製造方法
JPH1154488A (ja) * 1997-08-04 1999-02-26 Shin Etsu Chem Co Ltd 電極板
JPH1199463A (ja) * 1997-09-26 1999-04-13 Hitachi Ltd 切断方法および装置
JP2000021852A (ja) * 1998-06-29 2000-01-21 Hitachi Chem Co Ltd プラズマエッチング電極及びプラズマエッチング装置
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
JP2000135663A (ja) * 1998-10-30 2000-05-16 Tottori Univ 被加工物自転型ワイヤソー及びウェハ製造方法
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JP2002093777A (ja) * 2000-07-11 2002-03-29 Nisshinbo Ind Inc ドライエッチング装置
JP2002068885A (ja) * 2000-08-28 2002-03-08 Shin Etsu Chem Co Ltd シリコン製部品およびその表面金属不純物量の測定方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN86103233A (zh) * 1985-08-23 1987-02-18 英特尔公司 利用氟化气体混合物进行硅的等离子体蚀刻
US5712198A (en) * 1994-08-26 1998-01-27 Memc Electronic Materials, Inc. Pre-thermal treatment cleaning process
CN1181172A (zh) * 1994-12-22 1998-05-06 研究三角协会 等离子体处理装置和方法
CN1184555A (zh) * 1995-05-19 1998-06-10 兰姆研究公司 电极夹持组件和装配方法及其使用
US6416586B1 (en) * 1998-12-01 2002-07-09 Tadahiro Ohmi Cleaning method
US6376977B1 (en) * 1999-06-08 2002-04-23 Shin-Etsu Chemical Co., Ltd. Silicon electrode plate
WO2002003427A2 (en) * 2000-06-30 2002-01-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance

Also Published As

Publication number Publication date
KR100954711B1 (ko) 2010-04-23
IL164439A (en) 2010-05-17
IL164439A0 (en) 2005-12-18
EP1497849A1 (en) 2005-01-19
TW200402789A (en) 2004-02-16
EP1497849B1 (en) 2010-06-23
TWI279857B (en) 2007-04-21
CN1653589A (zh) 2005-08-10
JP2010157754A (ja) 2010-07-15
JP4837894B2 (ja) 2011-12-14
KR20050006157A (ko) 2005-01-15
AU2003220446A1 (en) 2003-11-03
ATE472172T1 (de) 2010-07-15
DE60333088D1 (de) 2010-08-05
JP2005523584A (ja) 2005-08-04

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Granted publication date: 20080416

Termination date: 20170321