KR100922621B1 - 플라즈마 처리 장치용 실리콘 소재의 제조 방법 - Google Patents
플라즈마 처리 장치용 실리콘 소재의 제조 방법 Download PDFInfo
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- KR100922621B1 KR100922621B1 KR1020070085546A KR20070085546A KR100922621B1 KR 100922621 B1 KR100922621 B1 KR 100922621B1 KR 1020070085546 A KR1020070085546 A KR 1020070085546A KR 20070085546 A KR20070085546 A KR 20070085546A KR 100922621 B1 KR100922621 B1 KR 100922621B1
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- silicon
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 300
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 257
- 239000010703 silicon Substances 0.000 title claims abstract description 239
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 238000012545 processing Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 153
- 238000000227 grinding Methods 0.000 claims abstract description 115
- 238000005498 polishing Methods 0.000 claims abstract description 42
- 238000010438 heat treatment Methods 0.000 claims abstract description 39
- 238000005530 etching Methods 0.000 claims abstract description 32
- 238000004140 cleaning Methods 0.000 claims abstract description 28
- 238000007517 polishing process Methods 0.000 claims abstract description 21
- 239000002210 silicon-based material Substances 0.000 claims abstract description 19
- 239000012535 impurity Substances 0.000 claims abstract description 8
- 238000005520 cutting process Methods 0.000 claims description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000000969 carrier Substances 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- -1 Ring Chemical compound 0.000 abstract description 5
- 230000000087 stabilizing effect Effects 0.000 abstract description 2
- 239000002245 particle Substances 0.000 description 16
- 230000003746 surface roughness Effects 0.000 description 16
- 238000009826 distribution Methods 0.000 description 10
- 239000002002 slurry Substances 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000005553 drilling Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 239000010432 diamond Substances 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 235000019592 roughness Nutrition 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 229910003460 diamond Inorganic materials 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 239000010802 sludge Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000007605 air drying Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000010330 laser marking Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (11)
- 실리콘 잉곳을 마련하는 단계;상기 실리콘 잉곳의 중심부를 코어링하여 실리콘 원통과 실리콘 중심 원통을 제작하는 단계;상기 실리콘 원통을 절단하여 내부가 비어있는 실리콘 판을 형성하고, 상기 실리콘 중심 원통을 절단하여 실리콘 전극판을 형성하는 단계;그라인딩 휠의 회전 속도, 압력, 세그먼트를 조절하여 실시하는 적어도 2회의 그라인딩 공정으로 상기 실리콘 판의 표면을 평탄화하는 단계;상기 실리콘 판을 가공하여 실리콘 링 부재를 제작하고, 상기 실리콘 전극판에 복수의 관통홀을 형성하는 단계를 포함하며,열처리 공정을 실시하여 상기 실리콘 링 부재 또는 실리콘 전극판 내의 불순물을 제거하는 단계; 및더블 사이드 폴리싱 공정을 실시하여 상기 실리콘 링 부재 또는 실리콘 전극판의 상면 및 하면을 동시에 폴리싱하는 단계를 포함하며,상기 더블 사이드 폴리싱 공정은 서로 다른 방향으로 회전하는 상부 폴리싱 패드부와 하부 폴리싱 패드부에 의해 실시되는 실리콘 소재의 제조 방법.
- 삭제
- 삭제
- 청구항 1에 있어서, 상기 그라인딩 공정은 제 1 거칠기로 1차 그라인딩한 후 상기 제 1 거칠기보다 낮은 제 2 거칠기로 2차 그라인딩하는 실리콘 소재의 제조 방법.
- 청구항 4에 있어서, 상기 1차 그라인딩 공정은 상기 2차 그라인딩 공정보다 낮은 회전 속도 및 높은 압력에서 실시하고, 상기 실리콘 판 또는 실리콘 전극판을 더 두껍게 제거하는 실리콘 소재의 제조 방법.
- 청구항 1에 있어서, 상기 그라인딩 공정 후 에칭 및 클리닝 공정을 실시하는 단계를 더 포함하는 실리콘 소재의 제조 방법.
- 청구항 1에 있어서, 상기 열처리 공정은,상온에서 제 1 온도로 상승시킨 후 제 1 시간동안 열처리하는 단계;상기 제 1 온도에서 제 2 온도로 상승시킨 후 제 2 시간동안 열처리하는 단계;상기 제 2 온도에서 제 3 온도로 상승시킨 후 제 3 시간동안 열처리하는 단계;상기 제 3 온도에서 상기 상온으로 온도를 하강시키는 단계를 포함하는 실리콘 소재의 제조 방법.
- 청구항 1에 있어서, 상기 열처리 공정은 산소 및 불활성 가스 또는 질소 및 불활성 가스를 유입시켜 실시하는 실리콘 소재의 제조 방법.
- 청구항 1에 있어서, 상기 열처리 공정 후 실리콘 링의 내측벽면에 단차를 형성한 후 상기 단차를 폴리싱하는 단계를 더 포함하는 실리콘 소재의 제조 방법.
- 삭제
- 청구항 1있어서, 상기 폴리싱 패드부와 상기 하부 폴리싱 패드부 사이에 복수의 캐리어를 위치시키고, 상기 캐리어 각각에 적어도 하나 이상의 상기 실리콘 링 또는 실리콘 전극판을 고정시키는 실리콘 소재의 제조 방법.
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KR1020070085546A KR100922621B1 (ko) | 2007-08-24 | 2007-08-24 | 플라즈마 처리 장치용 실리콘 소재의 제조 방법 |
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KR1020070085546A KR100922621B1 (ko) | 2007-08-24 | 2007-08-24 | 플라즈마 처리 장치용 실리콘 소재의 제조 방법 |
Publications (2)
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KR20090020908A KR20090020908A (ko) | 2009-02-27 |
KR100922621B1 true KR100922621B1 (ko) | 2009-10-21 |
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KR102422673B1 (ko) * | 2022-02-16 | 2022-07-18 | 김재선 | 정전척 포커스링 제작용 와이어컷팅 회전지지장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10275802A (ja) * | 1997-03-31 | 1998-10-13 | Hitachi Chem Co Ltd | プラズマエッチング電極の製造方法 |
KR20050006157A (ko) * | 2002-04-17 | 2005-01-15 | 램 리서치 코포레이션 | 플라즈마 반응 챔버용 실리콘 부품 |
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- 2007-08-24 KR KR1020070085546A patent/KR100922621B1/ko active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10275802A (ja) * | 1997-03-31 | 1998-10-13 | Hitachi Chem Co Ltd | プラズマエッチング電極の製造方法 |
KR20050006157A (ko) * | 2002-04-17 | 2005-01-15 | 램 리서치 코포레이션 | 플라즈마 반응 챔버용 실리콘 부품 |
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