JP2005523584A - プラズマ反応チャンバ用シリコン部品 - Google Patents
プラズマ反応チャンバ用シリコン部品 Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 234
- 238000006243 chemical reaction Methods 0.000 title claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 230
- 239000010703 silicon Substances 0.000 claims abstract description 230
- 229910052751 metal Inorganic materials 0.000 claims abstract description 101
- 239000002184 metal Substances 0.000 claims abstract description 101
- 239000012535 impurity Substances 0.000 claims abstract description 73
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims description 56
- 238000005520 cutting process Methods 0.000 claims description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 34
- 239000010949 copper Substances 0.000 claims description 34
- 229910052802 copper Inorganic materials 0.000 claims description 33
- 230000008569 process Effects 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 25
- 239000002210 silicon-based material Substances 0.000 claims description 21
- 239000000243 solution Substances 0.000 claims description 21
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 229910052742 iron Inorganic materials 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 239000010941 cobalt Substances 0.000 claims description 6
- 229910017052 cobalt Inorganic materials 0.000 claims description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 6
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052783 alkali metal Inorganic materials 0.000 claims description 5
- 150000001340 alkali metals Chemical class 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 239000003929 acidic solution Substances 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 4
- 239000003637 basic solution Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 2
- 230000002378 acidificating effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 29
- 238000011109 contamination Methods 0.000 abstract description 13
- 238000000429 assembly Methods 0.000 abstract description 2
- 230000000712 assembly Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 22
- 239000000126 substance Substances 0.000 description 18
- 150000002739 metals Chemical class 0.000 description 16
- 239000000203 mixture Substances 0.000 description 14
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910001369 Brass Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000010951 brass Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- -1 for example Chemical class 0.000 description 1
- 238000005247 gettering Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- QWPPOHNGKGFGJK-UHFFFAOYSA-N hypochlorous acid Chemical compound ClO QWPPOHNGKGFGJK-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Silicon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (22)
- 半導体処理装置のシリコン部品を形成する方法において、
切断中に金属不純物がシリコン板の切断面に付着するようにシリコン材料から前記シリコン板を切断することと、
前記切断面から少なくとも一部の前記金属不純物を除去するために、溶液で前記シリコン板の少なくとも前記切断面を処理することと、
前記処理されたシリコン板をオプションとして熱処理することと、
を含むことを特徴とする方法。 - 前記金属不純物は、銅、亜鉛、チタン、バナジウム、クロム、マンガン、鉄、コバルト、ニッケル及びアルカリ金属より成る群から選択された少なくとも1つの元素を含み、前記処理後の前記シリコン板の少なくとも前記切断面上の前記少なくとも1つの元素の濃度は、約100x1010atoms/cm2より低いことを特徴とする請求項1記載の方法。
- 前記金属不純物は銅を含み、前記処理後の前記シリコン板の少なくとも前記切断面上の銅の濃度は、約10x1010atoms/cm2より低いことを特徴とする請求項1記載の方法。
- 前記切断は、金属を含む切断工具で研磨することによって前記シリコン材料を切断することを含み、金属不純物は前記切断工具から除去されて、前記切断中に前記シリコン板の少なくとも前記切断面に付着することを特徴とする請求項1記載の方法。
- 前記処理は、前記シリコン板の少なくとも前記切断面を、前記付着した金属不純物を含有する前記シリコン板の一部を除去するために効果的な酸性溶液又は塩基性溶液と接触させることを特徴とする請求項1記載の方法。
- 実質的に全ての酸性溶液又は塩基性溶液を前記シリコン板から除去するために、処理後の前記シリコン板を水で洗浄することを更に含むことを特徴とする請求項5記載の方法。
- 前記シリコン板の表面は、前記金属不純物が前記シリコン板の選択された表面領域から拡散するのに十分な時間を有する前に前記溶液で処理され、前記処理は、前記表面領域の金属不純物を除去することを特徴とする請求項1記載の方法。
- 前記シリコン部品はリングであることを特徴とする請求項1記載の方法。
- 前記シリコン材料は単結晶シリコンであることを特徴とする請求項1記載の方法。
- 半導体処理装置のシリコン電極を形成する方法において、
切断中に金属不純物がシリコン板の切断面に付着するようにシリコン材料から前記シリコン板を切断することと、
前記切断面から少なくとも一部の前記金属不純物を除去するために、溶液で前記シリコン板の少なくとも前記切断面を処理することと、
前記処理されたシリコン板をオプションとして熱処理することと、
を含むことを特徴とする方法。 - 前記シリコン電極は平面状シャワーヘッド電極又は段付きシャワーヘッド電極であることを特徴とする請求項10記載の方法。
- 前記処理されたシリコン板を熱処理することと、
支持部材及び前記処理されたシリコン板の対向面を結合するために結合材料を提供することと、
前記支持部材と前記処理されたシリコン板との間に結合部を形成するために前記結合部材を硬化させることと、
を更に含むことを特徴とする請求項10記載の方法。 - 請求項10の方法によって形成されたシリコン電極。
- 半導体処理装置の反応チャンバ内で半導体ウェハを処理する方法において、
半導体処理装置内のチャンバ内に請求項10の方法によって形成されるシリコン電極を配置することと、
処理ガスを前記チャンバ内に導入することと、
前記シリコン電極に高周波電力を供給し前記処理ガスをプラズマ状態に励起することによって前記処理ガスからプラズマを発生させることと、
前記チャンバ内の半導体基板を前記プラズマで処理することと、
を含むことを特徴とする方法。 - 前記シリコン電極を含む前記チャンバ内の複数の半導体基板を処理することを更に含むことを特徴とする請求項14記載の方法。
- 前記金属不純物は、銅、亜鉛、チタン、バナジウム、クロム、マンガン、鉄、コバルト、ニッケル及びアルカリ金属より成る群から選択された少なくとも1つの元素を含み、前記処理後の前記シリコン板の少なくとも前記切断面上の前記少なくとも1つの元素の濃度は、約100x1010atoms/cm2より低いことを特徴とする請求項14記載の方法。
- 前記金属不純物は銅を含み、前記処理後の前記シリコン板の少なくとも前記切削面上の銅の濃度は、約10x1010atoms/cm2より低いことを特徴とする請求項14記載の方法。
- 切断面を含むシリコン板を有する半導体処理装置のシリコン電極であって、前記シリコン板の前記切断面上の銅、亜鉛、チタン、バナジウム、クロム、マンガン、鉄、コバルト、ニッケル及びアルカリ金属より成る群から選択された少なくとも1つの元素の濃度が、約100x1010atoms/cm2より低いことを特徴とするシリコン電極。
- 前記切断面上の銅の濃度は、約10x1010atoms/cm2より低いことを特徴とする請求項18記載の方法。
- 前記シリコン電極は平面状シャワーヘッド電極又は段付きシャワーヘッド電極であることを特徴とする請求項18記載のシリコン電極。
- 請求項18記載のシリコン電極を具備するシリコン電極アセンブリ。
- エラストマ結合で前記シリコン板に結合される支持部材を更に具備することを特徴とする請求項21記載のシリコン電極アセンブリ。
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US37348902P | 2002-04-17 | 2002-04-17 | |
US60/373,489 | 2002-04-17 | ||
US10/247,722 | 2002-09-20 | ||
US10/247,722 US6846726B2 (en) | 2002-04-17 | 2002-09-20 | Silicon parts having reduced metallic impurity concentration for plasma reaction chambers |
PCT/US2003/008702 WO2003090263A1 (en) | 2002-04-17 | 2003-03-21 | Silicon parts for plasma reaction chambers |
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---|---|---|---|---|
JP2011508422A (ja) * | 2007-12-19 | 2011-03-10 | ラム リサーチ コーポレーション | プラズマ処理装置用の複合シャワーヘッド電極組立体 |
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JP2016063226A (ja) * | 2014-09-17 | 2016-04-25 | ラム リサーチ コーポレーションLam Research Corporation | プラズマ処理チャンバの構成部品を洗浄する湿式洗浄工程 |
JP2020536217A (ja) * | 2017-10-05 | 2020-12-10 | ラム リサーチ コーポレーションLam Research Corporation | シリコンチューブを製造するための炉および鋳型を含む電磁鋳造システム |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH033244A (ja) * | 1989-05-30 | 1991-01-09 | Shin Etsu Handotai Co Ltd | 半導体シリコン基板の熱処理方法 |
JPH0891993A (ja) * | 1995-04-27 | 1996-04-09 | Shin Etsu Handotai Co Ltd | シリコン単結晶基板の製造方法および品質管理方法 |
JPH08274068A (ja) * | 1995-03-30 | 1996-10-18 | Sumitomo Sitix Corp | プラズマエッチング装置用シリコン電極 |
JPH1098015A (ja) * | 1996-09-24 | 1998-04-14 | Komatsu Ltd | ワイヤーソーのエンドレス接合方法 |
JPH1199463A (ja) * | 1997-09-26 | 1999-04-13 | Hitachi Ltd | 切断方法および装置 |
JP2000135663A (ja) * | 1998-10-30 | 2000-05-16 | Tottori Univ | 被加工物自転型ワイヤソー及びウェハ製造方法 |
WO2002003427A2 (en) * | 2000-06-30 | 2002-01-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
JP2002068885A (ja) * | 2000-08-28 | 2002-03-08 | Shin Etsu Chem Co Ltd | シリコン製部品およびその表面金属不純物量の測定方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4666555A (en) * | 1985-08-23 | 1987-05-19 | Intel Corporation | Plasma etching of silicon using fluorinated gas mixtures |
US5516730A (en) * | 1994-08-26 | 1996-05-14 | Memc Electronic Materials, Inc. | Pre-thermal treatment cleaning process of wafers |
US5643639A (en) * | 1994-12-22 | 1997-07-01 | Research Triangle Institute | Plasma treatment method for treatment of a large-area work surface apparatus and methods |
JPH08236505A (ja) * | 1995-02-28 | 1996-09-13 | Sumitomo Sitix Corp | プラズマエッチング装置用シリコン電極 |
JPH08274069A (ja) * | 1995-03-30 | 1996-10-18 | Sumitomo Sitix Corp | プラズマエッチング装置用シリコン電極装置 |
US5569356A (en) * | 1995-05-19 | 1996-10-29 | Lam Research Corporation | Electrode clamping assembly and method for assembly and use thereof |
JP3172671B2 (ja) * | 1996-03-19 | 2001-06-04 | 信越化学工業株式会社 | 静電チャック |
JP3789586B2 (ja) * | 1996-03-04 | 2006-06-28 | 信越化学工業株式会社 | 静電チャック |
JP3298467B2 (ja) * | 1997-07-18 | 2002-07-02 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
JPH1154488A (ja) * | 1997-08-04 | 1999-02-26 | Shin Etsu Chem Co Ltd | 電極板 |
JP2000021852A (ja) * | 1998-06-29 | 2000-01-21 | Hitachi Chem Co Ltd | プラズマエッチング電極及びプラズマエッチング装置 |
US6073577A (en) * | 1998-06-30 | 2000-06-13 | Lam Research Corporation | Electrode for plasma processes and method for manufacture and use thereof |
JP4367587B2 (ja) * | 1998-12-01 | 2009-11-18 | 財団法人国際科学振興財団 | 洗浄方法 |
JP3744726B2 (ja) * | 1999-06-08 | 2006-02-15 | 信越化学工業株式会社 | シリコン電極板 |
US6451157B1 (en) * | 1999-09-23 | 2002-09-17 | Lam Research Corporation | Gas distribution apparatus for semiconductor processing |
JP2002093777A (ja) * | 2000-07-11 | 2002-03-29 | Nisshinbo Ind Inc | ドライエッチング装置 |
-
2003
- 2003-03-21 CN CNB038112825A patent/CN100382230C/zh not_active Expired - Fee Related
- 2003-03-21 JP JP2003586922A patent/JP4837894B2/ja not_active Expired - Fee Related
- 2003-03-21 EP EP03716753A patent/EP1497849B1/en not_active Expired - Lifetime
- 2003-03-21 DE DE60333088T patent/DE60333088D1/de not_active Expired - Lifetime
- 2003-03-21 AU AU2003220446A patent/AU2003220446A1/en not_active Abandoned
- 2003-03-21 KR KR1020047016282A patent/KR100954711B1/ko not_active IP Right Cessation
- 2003-03-21 AT AT03716753T patent/ATE472172T1/de not_active IP Right Cessation
- 2003-03-21 IL IL16443903A patent/IL164439A0/xx unknown
- 2003-04-11 TW TW092108382A patent/TWI279857B/zh not_active IP Right Cessation
-
2004
- 2004-10-05 IL IL164439A patent/IL164439A/en not_active IP Right Cessation
-
2010
- 2010-02-16 JP JP2010031747A patent/JP2010157754A/ja active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH033244A (ja) * | 1989-05-30 | 1991-01-09 | Shin Etsu Handotai Co Ltd | 半導体シリコン基板の熱処理方法 |
JPH08274068A (ja) * | 1995-03-30 | 1996-10-18 | Sumitomo Sitix Corp | プラズマエッチング装置用シリコン電極 |
JPH0891993A (ja) * | 1995-04-27 | 1996-04-09 | Shin Etsu Handotai Co Ltd | シリコン単結晶基板の製造方法および品質管理方法 |
JPH1098015A (ja) * | 1996-09-24 | 1998-04-14 | Komatsu Ltd | ワイヤーソーのエンドレス接合方法 |
JPH1199463A (ja) * | 1997-09-26 | 1999-04-13 | Hitachi Ltd | 切断方法および装置 |
JP2000135663A (ja) * | 1998-10-30 | 2000-05-16 | Tottori Univ | 被加工物自転型ワイヤソー及びウェハ製造方法 |
WO2002003427A2 (en) * | 2000-06-30 | 2002-01-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
JP2002068885A (ja) * | 2000-08-28 | 2002-03-08 | Shin Etsu Chem Co Ltd | シリコン製部品およびその表面金属不純物量の測定方法 |
Cited By (9)
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JP2011508422A (ja) * | 2007-12-19 | 2011-03-10 | ラム リサーチ コーポレーション | プラズマ処理装置用の複合シャワーヘッド電極組立体 |
US8418649B2 (en) | 2007-12-19 | 2013-04-16 | Lam Research Corporation | Composite showerhead electrode assembly for a plasma processing apparatus |
US8449786B2 (en) | 2007-12-19 | 2013-05-28 | Lam Research Corporation | Film adhesive for semiconductor vacuum processing apparatus |
US8701268B2 (en) | 2007-12-19 | 2014-04-22 | Lam Research Corporation | Composite showerhead electrode assembly for a plasma processing apparatus |
US9028646B2 (en) | 2007-12-19 | 2015-05-12 | Lam Research Corporation | Film adhesive for semiconductor vacuum processing apparatus |
JP2016063226A (ja) * | 2014-09-17 | 2016-04-25 | ラム リサーチ コーポレーションLam Research Corporation | プラズマ処理チャンバの構成部品を洗浄する湿式洗浄工程 |
JP2020536217A (ja) * | 2017-10-05 | 2020-12-10 | ラム リサーチ コーポレーションLam Research Corporation | シリコンチューブを製造するための炉および鋳型を含む電磁鋳造システム |
JP7385560B2 (ja) | 2017-10-05 | 2023-11-22 | ラム リサーチ コーポレーション | シリコンチューブを製造するための炉および鋳型を含む電磁鋳造システム |
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Publication number | Publication date |
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DE60333088D1 (de) | 2010-08-05 |
CN1653589A (zh) | 2005-08-10 |
TWI279857B (en) | 2007-04-21 |
ATE472172T1 (de) | 2010-07-15 |
CN100382230C (zh) | 2008-04-16 |
EP1497849A1 (en) | 2005-01-19 |
IL164439A0 (en) | 2005-12-18 |
TW200402789A (en) | 2004-02-16 |
AU2003220446A1 (en) | 2003-11-03 |
IL164439A (en) | 2010-05-17 |
KR100954711B1 (ko) | 2010-04-23 |
KR20050006157A (ko) | 2005-01-15 |
EP1497849B1 (en) | 2010-06-23 |
JP4837894B2 (ja) | 2011-12-14 |
JP2010157754A (ja) | 2010-07-15 |
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