CN100350570C - 铝/钼层叠膜的蚀刻方法 - Google Patents
铝/钼层叠膜的蚀刻方法 Download PDFInfo
- Publication number
- CN100350570C CN100350570C CNB028209869A CN02820986A CN100350570C CN 100350570 C CN100350570 C CN 100350570C CN B028209869 A CNB028209869 A CN B028209869A CN 02820986 A CN02820986 A CN 02820986A CN 100350570 C CN100350570 C CN 100350570C
- Authority
- CN
- China
- Prior art keywords
- acid
- weight
- metal film
- wet etching
- molybdenum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000005530 etching Methods 0.000 title abstract description 26
- 239000005001 laminate film Substances 0.000 title abstract 3
- UNQHSZOIUSRWHT-UHFFFAOYSA-N aluminum molybdenum Chemical compound [Al].[Mo] UNQHSZOIUSRWHT-UHFFFAOYSA-N 0.000 title 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 68
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 58
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 34
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 34
- 239000000243 solution Substances 0.000 claims abstract description 28
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 24
- 238000001039 wet etching Methods 0.000 claims abstract description 23
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000011733 molybdenum Substances 0.000 claims abstract description 18
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000002844 melting Methods 0.000 claims abstract description 16
- 230000008018 melting Effects 0.000 claims abstract description 16
- 150000007524 organic acids Chemical class 0.000 claims abstract description 12
- 239000007864 aqueous solution Substances 0.000 claims abstract description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 57
- 239000000758 substrate Substances 0.000 claims description 22
- 235000011054 acetic acid Nutrition 0.000 claims description 19
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 16
- 239000000203 mixture Substances 0.000 claims description 14
- 150000001412 amines Chemical class 0.000 claims description 12
- 150000001768 cations Chemical class 0.000 claims description 12
- 235000019260 propionic acid Nutrition 0.000 claims description 8
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 6
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 claims description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 4
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 claims description 4
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 claims description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 4
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 claims description 4
- ARCGXLSVLAOJQL-UHFFFAOYSA-N trimellitic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 150000003863 ammonium salts Chemical class 0.000 claims description 3
- 239000002585 base Substances 0.000 claims description 3
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 2
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 claims description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- 239000001361 adipic acid Substances 0.000 claims description 2
- 235000011037 adipic acid Nutrition 0.000 claims description 2
- 229910052783 alkali metal Inorganic materials 0.000 claims description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 2
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 claims description 2
- 235000003704 aspartic acid Nutrition 0.000 claims description 2
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 claims description 2
- 235000015165 citric acid Nutrition 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- 239000001530 fumaric acid Substances 0.000 claims description 2
- 239000004310 lactic acid Substances 0.000 claims description 2
- 235000014655 lactic acid Nutrition 0.000 claims description 2
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 claims description 2
- 239000011976 maleic acid Substances 0.000 claims description 2
- 239000001630 malic acid Substances 0.000 claims description 2
- 235000011090 malic acid Nutrition 0.000 claims description 2
- 150000002751 molybdenum Chemical class 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 claims description 2
- 229920000768 polyamine Chemical class 0.000 claims description 2
- 229960004889 salicylic acid Drugs 0.000 claims description 2
- 229960005137 succinic acid Drugs 0.000 claims description 2
- 239000011975 tartaric acid Substances 0.000 claims description 2
- 235000002906 tartaric acid Nutrition 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 125000000291 glutamic acid group Chemical group N[C@@H](CCC(O)=O)C(=O)* 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 75
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 20
- 229910001182 Mo alloy Inorganic materials 0.000 description 20
- 239000000908 ammonium hydroxide Substances 0.000 description 20
- 239000003870 refractory metal Substances 0.000 description 15
- 229910000838 Al alloy Inorganic materials 0.000 description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 238000009826 distribution Methods 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000001035 drying Methods 0.000 description 7
- 238000011010 flushing procedure Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010276 construction Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- -1 Hydroxyl tricarboxylic acids Chemical class 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000006396 nitration reaction Methods 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- YNAVUWVOSKDBBP-UHFFFAOYSA-N Morpholine Chemical compound C1COCCN1 YNAVUWVOSKDBBP-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- RSEBUVRVKCANEP-UHFFFAOYSA-N 2-pyrroline Chemical compound C1CC=CN1 RSEBUVRVKCANEP-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- WHUUTDBJXJRKMK-VKHMYHEASA-N L-glutamic acid Chemical class OC(=O)[C@@H](N)CCC(O)=O WHUUTDBJXJRKMK-VKHMYHEASA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 229940043237 diethanolamine Drugs 0.000 description 1
- UZBQIPPOMKBLAS-UHFFFAOYSA-N diethylazanide Chemical compound CC[N-]CC UZBQIPPOMKBLAS-UHFFFAOYSA-N 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002762 monocarboxylic acid derivatives Chemical class 0.000 description 1
- GGHDAUPFEBTORZ-UHFFFAOYSA-N propane-1,1-diamine Chemical compound CCC(N)N GGHDAUPFEBTORZ-UHFFFAOYSA-N 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 150000004040 pyrrolidinones Chemical class 0.000 description 1
- 230000036647 reaction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- 150000003628 tricarboxylic acids Chemical class 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001324146 | 2001-10-22 | ||
| JP324146/2001 | 2001-10-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1575509A CN1575509A (zh) | 2005-02-02 |
| CN100350570C true CN100350570C (zh) | 2007-11-21 |
Family
ID=19140921
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028209869A Expired - Fee Related CN100350570C (zh) | 2001-10-22 | 2002-10-21 | 铝/钼层叠膜的蚀刻方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2003036707A1 (ko) |
| KR (1) | KR100944300B1 (ko) |
| CN (1) | CN100350570C (ko) |
| TW (1) | TWI304615B (ko) |
| WO (1) | WO2003036707A1 (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210254224A1 (en) * | 2018-09-18 | 2021-08-19 | Samsung Electronics Co., Ltd. | Etching composition, a method of etching a metal barrier layer and a metal layer using the same, and method of manufacturing semiconductor device using the same |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040029289A (ko) * | 2003-11-14 | 2004-04-06 | 동우 화인켐 주식회사 | 알루미늄 또는 알루미늄 합금층을 함유한 다층막 및단일막 식각액 조성물 |
| KR101131832B1 (ko) * | 2004-10-15 | 2012-07-17 | 동우 화인켐 주식회사 | 알루미늄 또는 알루미늄 합금, 및/또는 몰리브덴 또는몰리브덴 합금으로 이루어진 단일막 및 다층막 식각액조성물 |
| KR101171175B1 (ko) * | 2004-11-03 | 2012-08-06 | 삼성전자주식회사 | 도전체용 식각액 및 이를 이용한 박막 트랜지스터표시판의 제조 방법 |
| US7547627B2 (en) | 2004-11-29 | 2009-06-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP4741343B2 (ja) * | 2004-11-29 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR101216651B1 (ko) * | 2005-05-30 | 2012-12-28 | 주식회사 동진쎄미켐 | 에칭 조성물 |
| CN100376721C (zh) * | 2005-09-21 | 2008-03-26 | 中国海洋大学 | 用于钼的化学蚀刻溶液 |
| JP4855968B2 (ja) * | 2007-02-16 | 2012-01-18 | 株式会社 日立ディスプレイズ | パターン形成方法及びこのパターン形成方法を用いた液晶表示装置の製造方法 |
| KR101393599B1 (ko) * | 2007-09-18 | 2014-05-12 | 주식회사 동진쎄미켐 | Ｔｆｔ-ｌｃｄ용 금속 배선 형성을 위한 식각액 조성물 |
| JP2009103732A (ja) | 2007-10-19 | 2009-05-14 | Sony Corp | 表示装置およびその製造方法 |
| JP5484853B2 (ja) * | 2008-10-10 | 2014-05-07 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2011019222A2 (ko) * | 2009-08-13 | 2011-02-17 | 동우 화인켐 주식회사 | 구리 배선의 형성을 위한 식각액 조성물 |
| KR101728553B1 (ko) * | 2010-12-21 | 2017-04-20 | 동우 화인켐 주식회사 | 오믹 컨택층용 식각액 조성물 |
| CN102392248B (zh) * | 2011-10-18 | 2013-08-21 | 绵阳艾萨斯电子材料有限公司 | Oled用含钼和/或铝金属膜的蚀刻液及其制备方法 |
| CN103409753B (zh) * | 2013-07-23 | 2015-08-19 | 苏州羽帆新材料科技有限公司 | 金属蚀刻剂及其制备方法 |
| CN117867501B (zh) * | 2024-03-12 | 2024-06-11 | 芯越微电子材料(嘉兴)有限公司 | 一种钼铝兼用蚀刻液以及基板图案化金属层的制备方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4200969A (en) * | 1976-09-10 | 1980-05-06 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor device with multi-layered metalizations |
| US5150233A (en) * | 1990-02-26 | 1992-09-22 | Canon Kabushiki Kaisha | Liquid crystal device and display apparatus with a three-layered electrode of ito, molybdenum, and aluminum |
| EP0534240A1 (en) * | 1991-09-24 | 1993-03-31 | Matsushita Electric Industrial Co., Ltd. | Method for etching metal thin film consisting essentially of aluminum and for producing thin film transistor |
| JP2001166336A (ja) * | 1999-12-09 | 2001-06-22 | Hitachi Ltd | 液晶表示装置の製造方法、及び液晶表示装置の配線形成方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10335303A (ja) * | 1997-05-28 | 1998-12-18 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
| KR100315648B1 (ko) * | 2000-01-21 | 2001-11-29 | 정지완 | 액정표시장치의 게이트 전극용 식각액 |
| KR20010077228A (ko) * | 2000-02-01 | 2001-08-17 | 한의섭 | 몰리브덴-알루미늄합금-몰리브덴 삼중층 금속막용 에칭 용액 |
| JP3785900B2 (ja) * | 2000-04-28 | 2006-06-14 | 株式会社日立製作所 | 液晶表示装置とその製造方法 |
-
2002
- 2002-10-21 JP JP2003539095A patent/JPWO2003036707A1/ja active Pending
- 2002-10-21 KR KR1020047005396A patent/KR100944300B1/ko active IP Right Grant
- 2002-10-21 CN CNB028209869A patent/CN100350570C/zh not_active Expired - Fee Related
- 2002-10-21 WO PCT/JP2002/010871 patent/WO2003036707A1/ja active Search and Examination
- 2002-10-22 TW TW091124290A patent/TWI304615B/zh not_active IP Right Cessation
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4200969A (en) * | 1976-09-10 | 1980-05-06 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor device with multi-layered metalizations |
| US5150233A (en) * | 1990-02-26 | 1992-09-22 | Canon Kabushiki Kaisha | Liquid crystal device and display apparatus with a three-layered electrode of ito, molybdenum, and aluminum |
| EP0534240A1 (en) * | 1991-09-24 | 1993-03-31 | Matsushita Electric Industrial Co., Ltd. | Method for etching metal thin film consisting essentially of aluminum and for producing thin film transistor |
| JP2001166336A (ja) * | 1999-12-09 | 2001-06-22 | Hitachi Ltd | 液晶表示装置の製造方法、及び液晶表示装置の配線形成方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210254224A1 (en) * | 2018-09-18 | 2021-08-19 | Samsung Electronics Co., Ltd. | Etching composition, a method of etching a metal barrier layer and a metal layer using the same, and method of manufacturing semiconductor device using the same |
| US11795550B2 (en) * | 2018-09-18 | 2023-10-24 | Samsung Electronics Co., Ltd. | Etching composition, a method of etching a metal barrier layer and a metal layer using the same, and method of manufacturing semiconductor device using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100944300B1 (ko) | 2010-02-24 |
| CN1575509A (zh) | 2005-02-02 |
| WO2003036707A1 (fr) | 2003-05-01 |
| JPWO2003036707A1 (ja) | 2005-02-17 |
| KR20040045819A (ko) | 2004-06-02 |
| TWI304615B (ko) | 2008-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100350570C (zh) | 铝/钼层叠膜的蚀刻方法 | |
| CN1873054A (zh) | 蚀刻组合物 | |
| CN1716009A (zh) | 用于包括反射电极的叠合膜的蚀刻组合物以及用于形成叠层布线结构的方法 | |
| CN1912187A (zh) | 蚀刻剂组合物和用其构图导电层和制造平板显示器的方法 | |
| CN1170321C (zh) | 导电聚合物图形及其作为电极或电接触的应用 | |
| CN1885509A (zh) | 薄膜晶体管基板及其制造方法 | |
| CN1297582A (zh) | 薄膜晶体管的制造方法 | |
| CN1891862A (zh) | 用于去除导电材料的组合物及使用其制造阵列基板的方法 | |
| CN1877448A (zh) | 蚀刻剂及使用蚀刻剂制造布线及薄膜晶体管基板的方法 | |
| CN1896822A (zh) | 蚀刻剂以及使用该蚀刻剂制造液晶显示器的方法 | |
| CN101058618A (zh) | 树脂组合物,其制造方法及包含其的显示板 | |
| CN1614483A (zh) | 液晶显示器件制造方法 | |
| CN101080785A (zh) | 带透明导电膜的基板及其图案形成方法 | |
| CN1966772A (zh) | 蚀刻金属层的组合物以及使用其形成金属图案的方法 | |
| CN1604291A (zh) | 制造半导体器件的方法 | |
| CN1268975C (zh) | 构图铟锡氧化物的蚀刻剂和制造液晶显示装置的方法 | |
| CN101064273A (zh) | 布线衬底、显示装置及其制造方法 | |
| CN1875326A (zh) | 光致抗蚀剂剥离用组合物及剥离光致抗蚀剂的方法 | |
| CN1901169A (zh) | 制造薄膜晶体管基板的方法 | |
| CN1824834A (zh) | 钛、铝金属层叠膜蚀刻液组合物 | |
| CN1296286A (zh) | 带有凸点的布线电路基板的制造方法和凸点形成方法 | |
| CN1780529A (zh) | 形成图案的方法 | |
| CN1734334A (zh) | 液晶显示器件及其制造方法 | |
| KR20080045403A (ko) | 식각액 조성물 및 이를 이용한 식각방법 | |
| CN1760743A (zh) | 薄膜晶体管液晶显示器的蚀刻组合物 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20071121 Termination date: 20211021 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |