CN100342527C - 电源模块用基板 - Google Patents
电源模块用基板 Download PDFInfo
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- CN100342527C CN100342527C CNB2003101246890A CN200310124689A CN100342527C CN 100342527 C CN100342527 C CN 100342527C CN B2003101246890 A CNB2003101246890 A CN B2003101246890A CN 200310124689 A CN200310124689 A CN 200310124689A CN 100342527 C CN100342527 C CN 100342527C
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- 239000000758 substrate Substances 0.000 title claims abstract description 131
- 239000010949 copper Substances 0.000 claims abstract description 108
- 229910052751 metal Inorganic materials 0.000 claims abstract description 94
- 239000002184 metal Substances 0.000 claims abstract description 94
- 229910052802 copper Inorganic materials 0.000 claims abstract description 55
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 238000005476 soldering Methods 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 2
- 229910000679 solder Inorganic materials 0.000 abstract description 2
- 238000009825 accumulation Methods 0.000 abstract 1
- 230000001351 cycling effect Effects 0.000 abstract 1
- 230000035882 stress Effects 0.000 description 31
- 239000000919 ceramic Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 14
- 238000005482 strain hardening Methods 0.000 description 14
- 238000002425 crystallisation Methods 0.000 description 12
- 230000008025 crystallization Effects 0.000 description 12
- 230000003252 repetitive effect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 230000002950 deficient Effects 0.000 description 7
- 239000002245 particle Substances 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000002035 prolonged effect Effects 0.000 description 3
- 101100381656 Arabidopsis thaliana BIM3 gene Proteins 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- 229910000677 High-carbon steel Inorganic materials 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Abstract
提供一种同时满足对于温度循环具有长寿命和良好导电性的电源模块用基板。该基板包括绝缘基板(2)、在绝缘基板(2)的一个表面上层叠的电路层(3)、在绝缘基板(2)的另一个表面上层叠的金属层(4)、通过焊料(7)承载在电路层(3)上的半导体芯片(5)、以及与金属层(4)接合的散热体(6)。电路层(3)和金属层(4)由纯度为99.999%以上的铜构成。即使温度循环重复作用,内部应力也不会聚集,从而可以延长温度循环寿命。此外,电路层(3)和金属层(4)由导热性良好的铜构成,因此可以将来自半导体芯片(5)的热量通过向散热体(6)一侧传输而有效地释放到外部。
Description
技术领域
本发明涉及一种用于控制高电压、大电流的半导体装置的电源模块用基板,特别是,本发明涉及一种具有将来自半导体芯片的热量散去的散热体的电源模块用基板。
背景技术
作为已有的这种电源模块用基板,图2中示出了一种电源模块用基板11,其中在由AlN制成的绝缘基板12的一个表面上层叠由Al或Cu制成的电路层13,在其另一表面上层叠由Al或Cu制成的金属层14,半导体芯片15通过焊料17承载在电路层13上,散热体16通过焊料18、钎焊等与金属层14连接,在图3中也示出了一电源模块用基板21,其中在由AlN制成的绝缘基板22的一个表面上层叠由4N-Al(纯度为99.99%以上的铝)制成的电路层23,在其另一表面上层叠由4N-Al制成的金属层24,半导体芯片25通过焊料27承载在电路层23上,散热体26通过焊料28、钎焊等与金属层24连接,这两种基板11和21都是已知的。这样的电源模块用基板有很多种(例如参见专利文献1)。
在前述电源模块用基板11、21中,通过在例如冷却部件(图中未示出)上安装散热体16、26,将传递到散热体16、26上的来自半导体芯片15、25的热量借助冷却部件内的冷却水(或冷却空气)排放到外部。
专利文献1:特公平4-12554号公报(第1-3页、图1和图2)。
但是,利用如上所述构成的电源模块用基板11、21,在电路层13、23和金属层14、24由Cu构成的情况下,在进行-40~125℃的温度循环重复操作的情况下,通过重复10~100个循环左右电路层13、23和半导体芯片15、25之间的焊料17、27上产生裂纹,500个循环左右电路层13、23从绝缘基板12、22上剥离下来,但在电路层13、23和金属层14、24由Al构成的情况下,3000个循环左右电路层13、23和半导体芯片15、25之间的焊料17、27也不会产生裂纹。这是由于在重复进行温度循环的情况下,在电路层13、23和金属层14、24由Al构成时,内部应力不会聚集,而在由Cu构成的情况下内部应力聚集的缘故。因此,要延长温度循环寿命,就要获得内部应力不会聚集的结构。
另一方面,比较Al和Cu的导热率,Cu比Al更好,为了能够有效地向散热体16、26一侧传输来自半导体芯片15、25的热量并释放出去,最好利用导热性良好的Cu构成电路层13、23和金属层14、24,在使用Cu的情况下,由于存在所述内部应力聚集的问题,同时满足相对于温度循环的长寿命和良好的导热率是很困难的,只能牺牲其中一方。
发明内容
鉴于前述现有技术的问题,本发明的目的是提供一种电源模块用基板,可以延长相对于温度循环的寿命,同时获得良好的导热率,可将来自半导体芯片的热量向散热体一侧有效传输并释放出去。
为了解决上述问题,本发明采用以下措施。
即,本发明的技术方案1提供一种导热性多层基板,其特征在于,至少包括纯度为99.999%以上的Cu电路层和陶瓷层。
按照本发明的导热性多层基板,由于Cu电路层由99.999%以上的纯铜构成,即使进行温度循环重复操作,在Cu电路层中产生再结晶,消除了在Cu电路层内产生的内部应力,所以不易在陶瓷层和Cu电路层中产生裂纹等。
本发明的技术方案2提供一种导热性多层基板,其特征在于,包括纯度为99.999%以上的Cu电路层、在该Cu电路层的一个表面上设置的陶瓷层、以及在所述Cu电路层的另一表面上设置的高纯度金属层。
根据本发明的导热性多层基板,即使进行温度循环重复操作,也不易在Cu电路基板、陶瓷层和高纯度金属层上产生裂纹。
本发明的技术方案3的特征在于在技术方案2所述的导热性多层基板中,所述高纯度金属层是纯度为99.999%以上的Cu金属层。
根据本发明的导热性多层基板,即使进行温度循环重复操作,由于在Cu电路层和金属层中产生再结晶,从而无内部应力聚集,可以延长温度循环的寿命。
此外,金属层和Cu电路层均由纯度为99.999%以上的铜构成,因此导热率良好。
本发明的技术方案4提供一种电源模块用基板,包括绝缘基板、在该绝缘基板的一个表面上层叠的电路层、在该绝缘基板的另一表面上层叠的金属层、通过焊料承载在所述电路层上的半导体芯片、以及与所述金属层接合的散热体,所述电路层和金属层由纯度为99.999%以上的铜构成,在-40℃以上、150℃以下的温度范围内,所述电路层和所述金属层破裂时的延伸率为20%以上、30%以下。
根据本发明的电源模块用基板,由于电路层和金属层由纯度为99.999%以上的铜构成,所以在温度循环重复操作的情况下,通过再结晶消除了内部应力。因此,由于不存在内部应力聚集的问题,可以延长温度循环寿命。此外,由于电路层和金属层由铜构成,因此导热性良好。因此,可以将来自半导体芯片的热量向散热体一侧有效传输而释放出去。
本发明的技术方案5的特征在于在技术方案4所述的电源模块用基板中,所述散热体通过焊料、钎焊或扩散接合连接到所述金属层上。
根据本发明的电源模块用基板,由于电路层和金属层由纯度为99.999%以上的铜构成,所以在温度循环重复操作的情况下,通过再结晶消除了内部应力。因此,由于内部应力不会聚集,可延长温度循环寿命。此外,由于电路层和金属层由铜构成,因此导热率良好。因此,可以将来自半导体芯片的热量通过由铜构成的电路层、绝缘基板和由铜构成的金属层向散热体一侧有效传输而释放出去。
本发明的技术方案6的特征在于在技术方案4或5所述的电源模块用基板中,所述绝缘基板是由AlN、Al2O3、Si3N4或SiC构成。
根据本发明的电源模块用基板,由于电路层和金属层由纯度为99.999%以上的铜构成,所以在温度循环重复操作的情况下,通过再结晶消除了内部应力。因此,由于内部应力不会聚集,可延长温度循环的寿命。此外,由于电路层和金属层由铜构成,因此导热率良好。因此,可以将来自半导体芯片的热量通过由铜构成的电路层、由AlN、Al2O3、Si3N4或SiC构成的绝缘基板以及由铜构成的金属层向散热体一侧有效传输而释放出去。
本发明的技术方案7的特征在于在技术方案4-6中任一项所述的电源模块用基板中,所述电路层和所述金属层在100℃以下释放应力。
根据本发明的电源模块用基板,金属层和电路层难以加工硬化,可以防止焊料上产生裂纹,并且可以防止电路层从绝缘基板上剥离下来。
本发明的技术方案8的特征在于在技术方案4-6中任一项所述的电源模块用基板中,在-40℃以上、150℃以下的温度范围内,所述电路层和所述金属层破裂时的延伸率为20%以上、30%以下。
根据本发明的电源模块用基板,金属层和电路层难以加工硬化,可以防止焊料上产生裂纹,并且可以防止电路层从绝缘基板剥离下来。
结果是,在-40℃以上、150℃以下的温度范围内的延伸率小于20%的情况下,电路层和金属层容易发生加工硬化,在电路层和半导体芯片之间的焊料上恐怕会产生裂纹,此外,在-40℃到120℃的温度范围内的延伸率为大于30%的情况下,在电路层和焊料之间产生过大热应力,电路层和半导体芯片之间的焊料上产生裂纹,因而电路层从绝缘基板剥离下来。
本发明的技术方案9的特征在于在技术方案4-6中任一项所述的电源模块用基板中,所述电路层和所述金属层的厚度为0.04mm以上、1.0mm以下。
按照本发明的电源模块用基板,金属层和电路层难以加工硬化,可以防止焊料上产生裂纹,并且可防止电路层从绝缘基板剥离下来。
此外,在金属层和电路层的厚度小于0.04mm的情况下,不能减轻电路层在半导体芯片和绝缘基板之间产生的应力,恐怕会在焊料上产生裂纹,此外,在厚度大于1mm的情况下,电路层的强度很大,存在因温度循环重复操作而使绝缘基板破裂的危险。
本发明的技术方案10的特征在于在技术方案4-6中任一项所述的电源模块用基板中,所述电路层和所述金属层的导电率为99%IASC以上。
按照本发明的电源模块用基板,可以防止电路层从绝缘基板上剥离下来。
此外,IACS指的是国际标准软铜(International Annealed Copper Standard)。
本发明的技术方案11的特征在于在技术方案4-6中任一项所述的电源模块用基板中,所述电路层和所述金属层的结晶粒的平均粒径为1.0mm以上、30mm以下。
按照本发明的电源模块用基板,不会发生电路层和金属层弯曲等的情况,此外,可以防止电路层和金属层加工硬化。
此外,该技术方案中的平均粒径指的是电源模块制造之后的平均结晶粒径的平均值。
此外,在平均粒径小于1.0mm的情况下,金属层和电路层经过温度循环之后容易产生加工硬化,电路层和半导体芯片之间的焊料上易产生裂纹,此外,在平均粒径大于30mm的情况下,在金属层和电路层上将产生机械强度各向异性、弯曲等问题。
按照本发明的电源模块用基板,由于电路层和金属层由纯度为99.999%以上的铜构成,在温度循环重复操作的情况下,通过再结晶消除了内部应力。因此,内部应力不会聚集,大大延长了温度循环寿命。此外,电路层和金属层由导热性良好的铜构成,因此来自半导体芯片的热量可以通过向散热体一侧的有效传输而释放到外部。因此,可以提供同时满足相对于温度循环的长寿命和良好导热率的电源模块用基板。
附图说明
图1是表示根据本发明的电源模块用基板的一个实施例的示意剖面图。
图2是表示现有技术的电源模块用基板的一个例子的示意剖面图。
图3是表示现有技术的电源模块用基板的另一例子的示意剖面图。
具体实施方式
下面参照附图介绍本发明的实施例。
图1示出了本发明的电源模块用基板的一个实施例,这种电源模块用基板1包括绝缘基板2、在绝缘基板2的一个表面上层叠的电路层3、在绝缘基板2的另一表面上层叠的金属层4、承载在电路层3上的半导体芯片5、以及与金属层4接合的散热体6。
绝缘基板2例如由AlN、Al2O3、Si3N4或SiC等按希望的尺寸构成,在其上面和下面分别层叠接合电路层3和金属层4。
作为在绝缘基板2上层叠连接电路层3和金属层4的方法,有下列方法:在绝缘基板2和电路层3以及金属层4处于重叠状态下,对其施加0.5~2kgf/cm2(4.9×104-19.6×104Pa)的负载,在N2气氛中加热到1065℃的所谓DBC法(直接键合铜法);在绝缘基板2、电路层3和金属层4之间夹持Ag-Cu-Ti焊料箔的状态下,对其施加0.5~2kgf/cm2(4.9×104-19.6×104Pa)的负载,在真空中加热到800-900℃的所谓活性金属法等方法,可以根据用途选择适当的方法。
电路层3和金属层4由纯度为99.999%以上的铜(5N-Cu)构成。5N-Cu具有再结晶温度为RT(室温)~150℃的特性。因此,即使在-40~125℃的温度循环下重复使用,内部应力也不会聚集,并可抑制在温度循环的高温一侧的加工硬化。
电路层3和金属层4优选由纯度为99.9999%以上的铜(6N-Cu)构成。6N-Cu具有再结晶温度为RT(室温)~100℃的特性。因此,与5N-Cu一样,即使在-40~125℃的温度循环下重复使用,内部应力也不会聚集,从而抑制了在温度循环的高温一侧的加工硬化,与电路层和金属层由Al构成的情况相同,可以获得3000次循环以上的温度循环寿命。
形成用于将半导体芯片5承载在电路层3上的电路图形,在该电路层3的上部通过焊料7承载半导体芯片5。在金属层3的下面通过焊料8、钎焊、扩散焊接等方法一体地连接散热体6。
散热体6是例如用Al、Cu等高导热材料(导热率良好的材料)构成的散热体本体、与高碳素钢(Fe-C)等低热膨胀的材料多次接合而成的多层结构,安装在下部设置的冷却部件9上来使用,通过冷却部件9内的冷却水(或冷却空气)将传输到散热体6上的来自半导体芯片5的热量释放到外部。
根据如上所述构成的实施例的电源模块用基板1,由于电路层3和金属层4由纯度为99.999%以上的Cu(5N-Cu)构成,即使在-40~125℃的温度循环重复的条件下使用,也不会发生内部应力聚集,可以抑制在温度循环的高温侧的加工硬化。因此,像SiC、GaN等一样,可以使用在高温范围内操作的装置。
此外,在电路层3和金属层4由纯度为99.999%以上的铜(6N-Cu)构成的情况下,即使在-40~125℃的温度循环重复作用的条件下使用,内部应力也不会聚集,可以抑制在温度循环的高温侧的加工硬化。因此,可以使用在125℃以下操作的装置(Si半导体等)。
表1示出了现有技术的电源模块用基板与本发明的电源模块用基板的温度循环寿命的比较结果。其中,陶瓷表示绝缘基板,金属电路表示电路层和金属层,OFC表示无氧铜(Cu;99.9~99.99%)。从该表1可知,与现有技术的电源模块用基板相比,根据本发明的电源模块用基板延长了温度循环寿命。
表1
陶瓷 | 金属电路 | 温度循环寿命 | |||||
尺寸(mm) | 厚度(mm) | 材质 | 尺寸(mm) | 厚度(mm) | 材质 | ||
现有技术例子 | 30×30 | 0.635 | AlN | 28×28 | 0.3 | OFC | 520 |
40×50 | 0.635 | AlN | 38×48 | 0.4 | Al | 5200 | |
30×15 | 0.635 | AlN | 28×13 | 0.6 | Al | 3100 | |
50×50 | 0.635 | Al2O3 | 48×48 | 0.3 | OFC | 1320 | |
70×35 | 0.32 | Al2O3 | 68×33 | 0.3 | OFC | 510 | |
60×35 | 0.32 | Al2O3 | 58×33 | 0.4 | Al | 2900 | |
30×30 | 0.635 | Si3N4 | 28×28 | 0.3 | OFC | 2800 | |
30×20 | 0.32 | Si3N4 | 28×18 | 0.6 | Al | 3500 | |
50×40 | 0.32 | Si3N4 | 48×38 | 0.4 | Al | 3800 | |
本发明的产品 | 30×30 | 0.635 | AlN | 28×28 | 0.3 | 6N-Cu | 5200 |
40×50 | 0.635 | AlN | 38×48 | 0.4 | 6N-Cu | 5210 | |
30×15 | 0.635 | AlN | 28×13 | 0.6 | 6N-Cu | 6200 | |
50×50 | 0.635 | Al2O3 | 48×48 | 0.3 | 6N-Cu | 5800 | |
70×35 | 0.32 | Al2O3 | 68×33 | 0.3 | 6N-Cu | 4800 | |
60×35 | 0.32 | Al2O3 | 58×33 | 0.4 | 6N-Cu | 3520 | |
30×30 | 0.635 | Si3N4 | 28×28 | 0.3 | 6N-Cu | 8250 | |
30×20 | 0.32 | Si3N4 | 28×18 | 0.6 | 6N-Cu | 5630 | |
50×40 | 0.32 | Si3N4 | 48×38 | 0.4 | 6N-Cu | 7520 |
下面说明本发明的第二实施例。本实施例在结构上与图1的结构相同,因此仅改变符号进行说明。
按照本实施例,电路层3a和金属层4a由在100℃以下进行应力释放的Cu(5N-Cu)构成。这里,所谓应力释放,指的是再结晶之前在结晶内产生的点缺陷消减、错位再排列等。
为此,由于容易产生缺陷的消灭、错位再排列等,电路层3a和金属层4b不容易产生内部应力聚集。
亦即,即使电路层3a和金属层4b在-40℃以上、125℃以下范围的温度下温度循环重复,由于在100℃以下发生缺陷消减、错位再排列等,恢复无应变的状态,在加工硬度方面,硬度变化小。
因此,减轻了电路层3a、半导体芯片5和绝缘基2之间产生的应力。
此外,可以防止焊料7上产生裂纹。
表2示出了温度循环(-40℃~125℃×15分钟,3000次循环)后的硬度变化与绝缘电路基板的不良率之间的关系(不良:陶瓷基板裂开,Cu电路层和陶瓷基板剥离)。使Cu(2N、3N、4N、5N、6N)的纯度变化,做成硬度变化不同的样品。
从表2清楚看出,在硬度变化为30%以上的情况下,产生绝缘基板破裂、电路层和绝缘基板的剥离等问题。
表2
Cu纯度 | 不良率 | 硬度变化 |
2N | 100% | 42% |
3N | 83% | 39% |
4N | 26% | 30% |
5N | 0% | 24% |
6N | 0% | 22% |
此外,通过下列表3清楚看出,在通过应力释放进行错位消减的情况下,不会发生绝缘基板2破裂、电路层3a和绝缘基板2剥离等问题。
下面说明本发明的第三实施例。本实施例的结构与图1中所示的结构相同,因此仅改变符号进行说明。
按照本实施例,电路层3b和金属层4b由在-40℃以上、150℃以下的温度范围内破裂时延伸率的范围为20%以上、30%以下且纯度为99.999%以上的Cu形成。
这里,电路层3b和金属层4b由上述铜形成,即使在-40℃到125℃的温度循环下重复使用,电路层3b和金属层4b也不易发生加工硬化问题。
为此,按照本实施例,与第一实施例一样,可以抑制在温度循环的高温侧的加工硬化,与SiC、GaN等那样,可以用于在高温范围内操作的装置。
而且,从表3看出,根据在-40℃到150℃进行的张力试验结果,在延伸率为20%以上、30%以下的情况下,不会发生绝缘基板2破裂、电路层3a和绝缘基板2剥离等情况。
下面介绍本发明的第四实施例。本实施例的结构与图1中所示结构相同,因此仅改变符号进行说明。
本实施例中,电路层3c和金属层4c由纯度为99.999%以上的纯铜形成,因此电路层3c和金属层4c的厚度可以形成为0.04mm以上、1.0mm以下。
由于电路层3c和金属层4c的厚度形成为0.04mm以上、1.0mm以下,因此即使在-40~125℃的温度循环下重复使用,内部应力也不会聚集,可以抑制在温度循环的高温侧产生加工硬化,可以获得3000次循环以上的温度循环寿命。
特别是,在绝缘基板2由AlN或Al2O3构成的情况下,可以获得长的温度循环寿命。
下面说明本发明的第四实施例。本实施例的结构与图1中所示的结构相同,因此仅改变符号进行说明。
按照本实施例,电路层3d和金属层4d由纯度为99.999%以上的纯铜中,导电率为99%IASC以上的纯铜构成。
从表3看出,在N=5或N=6的纯铜中导电率为99%IASC以上的纯铜的情况下,不会发生陶瓷基板破裂、或Cu电路和陶瓷基板剥离等情况。
下面说明本发明的第五实施例。本实施例的结构与图1中所示的结构相同,因此仅改变符号进行说明。
按照本实施例,电路层3e和金属层4e是由99.999%以上的纯铜中平均结晶粒径为1.0mm以上、30mm以下的纯铜形成。
在结晶粒径为1.0mm以上、30mm以下的情况下,由于对电路层3e和金属层4e不易共同加工硬化,而且不易受焊料7、8的影响,所以陶瓷基板不会破裂,不会发生电路层3e和金属层4e剥离等。
为此,即使在-40℃到125℃的温度循环中,也可以获得3000次循环以上的温度循环寿命。
表3示出了切割这种绝缘基板的Cu电路部分(利用20%的NaOH刻蚀液除去残余部分的陶瓷)、对不良率、错位数量的减少、导电率、平均粒径以及延伸率进行测定的结果。
对于延伸率,以Cu电路的厚度为0.3mm,拉伸速度为0.5mm/min实施。
对于错位数,测定在100℃的热处理后的错位数是否减少。在观测中,用TEM观察绝缘电路基板的Cu材料的部分,以N=3测定错位数,对于该平均错位数,在100℃下对绝缘电路基板热处理3小时之后,检测到测定的平均错位数减少。
导电率用与国际标准软铜(IACS)的导电性的比来表示。
平均结晶粒径是在100℃热处理后的结晶粒径的平均值。
针对各个试验项目,不良率用于判断是否发生陶瓷基板的破裂、Cu电路和陶瓷基板的剥离等。
从该结果看出,在N=5或N=6的纯铜中,在延伸率为20%以上、30%以下的情况下,不会发生陶瓷基板的破裂、Cu电路和陶瓷基板剥离等。
此外,在N=5或N=6的纯铜中,在平均结晶粒径的平均值为1.0mm以上的情况下,不会发生陶瓷基板破裂、Cu电路和陶瓷基板剥离等现象。
此外,在N=5或N=6的纯铜中,在导电率为99IASC以上的纯铜的情况下,不会发生陶瓷基板破裂、Cu电路和陶瓷基板剥离等现象。
此外,在N=5和N=6的纯铜中,对于在100℃下热处理3小时之后产生错位数减少的纯铜,不会发生陶瓷基板的破裂、Cu电路和陶瓷基板剥离等现象。
表3
Cu纯度 | 不良率 | 错位数的减少 | 导电率(20℃) | 平均结晶粒径 | 延伸率 | |||
-40℃ | RT | 80℃ | 150℃ | |||||
2N | 100% | 95 | 0.1mm | 13% | 12% | 11% | 12% | |
3N | 83% | 96 | 0.2mm | 16% | 15% | 15% | 13% | |
4N | 26% | 98 | 0.5mm | 17% | 15% | 13% | 12% | |
5N | 0% | 有 | 99 | 1.9mm | 22% | 21% | 23% | 22% |
6N | 0% | 有 | 99 | 3.8mm | 28% | 22% | 22% | 23% |
表4记载了对纯铜A(N=5,真空退火材料,厚度为0.3mm)、纯铜B(N=3,真空退火材料,厚度为0.3mm)和铝(真空退火材料,厚度为0.4mm)进行拉伸试验的结果。
从该结果看出,纯铜A在-40℃到150℃下延伸率为20%以上、30%以下。
表4
①纯铜A 真空退火材料 厚度0.3
样品 ②纯铜B 真空退火材料 厚度0.3
③铝 真空退火材料 厚度0.4
标号 | 截面积(mm2) | 耐力 | 实际负载(N) | 拉伸负载(N/mm2) | 延伸GL=0 | 切断位置 | 试验温度(℃) | |||
负载(N) | 应力(N/mm2) | 实际延伸(mm) | (%) | |||||||
A材(Cu) | A-1 | 3.85 | 180 | 47 | 529 | 137 | 13.7 | 27 | B | -40 |
A-2 | 3.85 | 164 | 43 | 583 | 151 | 14.8 | 30 | B | -40 | |
A-3 | 3.85 | 149 | 39 | 458 | 119 | 10.7 | 21 | A | RT | |
A-4 | 3.85 | 167 | 43 | 457 | 119 | 11.0 | 22 | B | RT | |
A-5 | 3.85 | 134 | 35 | 480 | 125 | 12.0 | 24 | B | 80 | |
A-6 | 3.85 | 185 | 48 | 427 | 111 | 9.1 | 18 | C | 80 | |
A-7 | 3.85 | 155 | 40 | 409 | 106 | 9.0 | 18 | C | 150 | |
A-8 | 3.85 | 159 | 41 | 375 | 97 | 10.8 | 22 | C | 150 | |
B材(Cu) | B-1 | 3.93 | 184 | 47 | 698 | 178 | 8.8 | 18 | C | -40 |
B-2 | 3.93 | 199 | 51 | 671 | 171 | 8.2 | 16 | C | -40 | |
B-3 | 3.93 | 169 | 43 | 584 | 149 | 7.4 | 15 | C | RT | |
B-4 | 3.93 | 179 | 46 | 579 | 147 | 7.2 | 14 | C | RT | |
B-5 | 3.93 | 161 | 41 | 519 | 132 | 6.7 | 13 | C | 80 | |
B-6 | 3.93 | 177 | 45 | 517 | 132 | 6.4 | 13 | C | 80 | |
B-7 | 3.93 | 167 | 42 | 454 | 116 | 5.9 | 12 | C | 150 | |
B-8 | 3.93 | 160 | 41 | 454 | 116 | 5.8 | 12 | C | 150 | |
I材 | C-1 | 5.08 | 123 | 24 | 199 | 39 | 16.0 | 32 | B | -40 |
C-2 | 5.08 | 118 | 23 | 188 | 37 | 12.2 | 24 | C | -40 | |
C-3 | 5.08 | 120 | 24 | 158 | 31 | 10.4 | 21 | C | RT | |
C-4 | 5.08 | 89 | 18 | 174 | 34 | 7.8 | 16 | C | RT | |
C-5 | 5.08 | 103 | 20 | 117 | 23 | 13.4 | 27 | B | 80 | |
C-6 | 5.08 | 83 | 16 | 130 | 26 | 14.1 | 28 | B | 80 | |
C-7 | 5.08 | 72 | 14 | 88 | 17 | 12.5 | 25 | A | 150 | |
C-8 | 5.08 | 73 | 14 | 108 | 21 | 17.0 | 34 | C | 150 |
试验片:12.5W×50GL
应变量规:KFH-5-120-Cl-16 BIM3 Cu用两面贴付
KFH-5-120-Cl-23 BIM3 Al用两面贴付
粘接剂:EP-34B
十字头速度:耐力至0.5mm/min耐力以后5mm/min
根据本发明的电源模块用基板,由于电路层和金属层由纯度为99.999%以上的铜构成,因此在温度循环重复作用的情况下,通过再结晶可消减内部应力。因此,内部应力不会聚集,可以显著延长温度循环寿命。此外,电路层和金属层由导热性良好的铜构成,因此可以将来自半导体芯片的热量通过向散热体一侧有效传输而释放。因此,可以提供同时满足温度循环的长寿命和良好导热性的电源模块用基板,并确认了其产业上的可利用性。
根据本发明的电源模块用基板,电路层和金属层由纯度为99.999%以上的纯铜构成,因此在温度循环重复作用的情况下,通过再结晶消除内部应力。因此,内部应力不会聚集,显著延长了温度循环寿命。此外,电路层和金属层由导热性良好的铜构成,因此可以将来自半导体芯片的热量通过向散热体一侧有效传输而释放到外面。因此,可以提供同时满足温度循环的长寿命和良好导热性的电源模块用基板。
Claims (14)
1、一种电源模块用基板,包括绝缘基板、在该绝缘基板的一个表面上层叠的电路层、在该绝缘基板的另一表面上层叠的金属层、通过焊料承载在所述电路层上的半导体芯片、以及与所述金属层接合的散热体,所述电路层和金属层由纯度为99.999%以上的铜构成,在-40℃以上、150℃以下的温度范围内,所述电路层和所述金属层破裂时的延伸率为20%以上、30%以下。
2、根据权利要求1所述的电源模块用基板,其特征在于,所述散热体通过焊料、钎焊或扩散接合连接到所述金属层上。
3、根据权利要求1所述的电源模块用基板,其特征在于,所述绝缘基板由AlN、Al2O3、Si3N4或SiC构成。
4、根据权利要求2所述的电源模块用基板,其特征在于,所述绝缘基板由AlN、Al2O3、Si3N4或SiC构成。
5、根据权利要求1-4中任一项所述的电源模块用基板,其特征在于,所述电路层和所述金属层在100℃下在24小时内释放应力。
6、根据权利要求1-4中任一项所述的电源模块用基板,其特征在于,所述电路层和所述金属层的厚度为0.04mm以上、1.0mm以下。
7、根据权利要求1-4中任一项所述的电源模块用基板,其特征在于,所述电路层和所述金属层的导电率为99%IASC以上。
8、一种电源模块用基板,包括绝缘基板、在该绝缘基板的一个表面上层叠的电路层、在该绝缘基板的另一表面上层叠的金属层、通过焊料承载在所述电路层上的半导体芯片、以及与所述金属层接合的散热体,所述电路层和金属层由纯度为99.999%以上的铜构成,所述电路层和所述金属层的结晶粒的平均粒径为1.0mm以上、30mm以下。
9、根据权利要求8所述的电源模块用基板,其特征在于,所述散热体通过焊料、钎焊或扩散接合连接到所述金属层上。
10、根据权利要求8所述的电源模块用基板,其特征在于,所述绝缘基板由AlN、Al2O3、Si3N4或SiC构成。
11、根据权利要求9所述的电源模块用基板,其特征在于,所述绝缘基板由AlN、Al2O3、Si3N4或SiC构成。
12、根据权利要求8-11中任一项所述的电源模块用基板,其特征在于,所述电路层和所述金属层在100℃下在24小时内释放应力。
13、根据权利要求8-11中任一项所述的电源模块用基板,其特征在于,所述电路层和所述金属层的厚度为0.04mm以上、1.0mm以下。
14、根据权利要求8-11中任一项所述的电源模块用基板,其特征在于,所述电路层和所述金属层的导电率为99%IASC以上。
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- 2003-11-27 JP JP2003397839A patent/JP4206915B2/ja not_active Expired - Lifetime
- 2003-12-22 EP EP03029282.5A patent/EP1434265B1/en not_active Expired - Lifetime
- 2003-12-23 US US10/743,081 patent/US20040188828A1/en not_active Abandoned
- 2003-12-25 CN CNB2003101246890A patent/CN100342527C/zh not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
CN1512569A (zh) | 2004-07-14 |
JP2004221547A (ja) | 2004-08-05 |
EP1434265A1 (en) | 2004-06-30 |
JP4206915B2 (ja) | 2009-01-14 |
US20040188828A1 (en) | 2004-09-30 |
EP1434265B1 (en) | 2015-09-09 |
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