CH672696A5 - - Google Patents
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- Publication number
- CH672696A5 CH672696A5 CH392586A CH392586A CH672696A5 CH 672696 A5 CH672696 A5 CH 672696A5 CH 392586 A CH392586 A CH 392586A CH 392586 A CH392586 A CH 392586A CH 672696 A5 CH672696 A5 CH 672696A5
- Authority
- CH
- Switzerland
- Prior art keywords
- layer
- inclination
- semiconductor component
- negative
- impurity concentration
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 8
- 239000012535 impurity Substances 0.000 claims description 6
- 230000005684 electric field Effects 0.000 description 9
- 230000007423 decrease Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21910885A JPS6279667A (ja) | 1985-10-03 | 1985-10-03 | 半導体装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH672696A5 true CH672696A5 (ja) | 1989-12-15 |
Family
ID=16730379
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH392586A CH672696A5 (ja) | 1985-10-03 | 1986-10-01 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS6279667A (ja) |
| CH (1) | CH672696A5 (ja) |
| DE (1) | DE3632489A1 (ja) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE9702220D0 (sv) * | 1997-06-11 | 1997-06-11 | Abb Research Ltd | A semiconductor device with a junction termination and a method for production thereof |
| US6770911B2 (en) | 2001-09-12 | 2004-08-03 | Cree, Inc. | Large area silicon carbide devices |
| JP2010034220A (ja) * | 2008-07-28 | 2010-02-12 | Kansai Electric Power Co Inc:The | バイポーラ半導体装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1039566A (en) * | 1964-01-27 | 1966-08-17 | English Electric Co Ltd | Semi-conductor device |
| DE1514184A1 (de) * | 1965-12-28 | 1969-09-11 | Licentia Gmbh | Halbleiterbauelement |
| FR2061563A1 (ja) * | 1969-07-08 | 1971-06-25 | Comp Generale Electricite | |
| JPS57148371A (en) * | 1981-03-10 | 1982-09-13 | Nec Corp | Manufacture of mesa type semiconductor device |
| JPS607178A (ja) * | 1983-06-27 | 1985-01-14 | Toshiba Corp | 半導体装置 |
-
1985
- 1985-10-03 JP JP21910885A patent/JPS6279667A/ja active Pending
-
1986
- 1986-09-24 DE DE19863632489 patent/DE3632489A1/de not_active Ceased
- 1986-10-01 CH CH392586A patent/CH672696A5/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| DE3632489A1 (de) | 1987-04-16 |
| JPS6279667A (ja) | 1987-04-13 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |