GB1039566A - Semi-conductor device - Google Patents
Semi-conductor deviceInfo
- Publication number
- GB1039566A GB1039566A GB336464A GB336464A GB1039566A GB 1039566 A GB1039566 A GB 1039566A GB 336464 A GB336464 A GB 336464A GB 336464 A GB336464 A GB 336464A GB 1039566 A GB1039566 A GB 1039566A
- Authority
- GB
- United Kingdom
- Prior art keywords
- alloy
- held
- npn
- terminals
- pieces
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000463 material Substances 0.000 abstract 4
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- 229910001245 Sb alloy Inorganic materials 0.000 abstract 1
- DPSYCZQVVHMJBN-UHFFFAOYSA-N [Sb].[Pb].[Ag] Chemical compound [Sb].[Pb].[Ag] DPSYCZQVVHMJBN-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000002140 antimony alloy Substances 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- YCKOAAUKSGOOJH-UHFFFAOYSA-N copper silver Chemical compound [Cu].[Ag].[Ag] YCKOAAUKSGOOJH-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Resistance Heating (AREA)
- Forging (AREA)
Abstract
1,039,566. Controlled rectifiers. ENGLISH ELECTRIC CO. Ltd. Feb. 12, 1965 [Jan. 27, 1964], No. 3364/64. Heading H1K. A controlled rectifier is made by mounting an NPN body in a jig between conductive endpieces and heating to alloy the parts together. Alloying material disposed between the body and end pieces is selected to provide ohmic and PN contacts respectively to the outer regions of the body. In the embodiment, Fig. 3, in which the annular control electrode and copper terminals are attached in the same process the NPN body, jet etched to the form shown, is assembled between molybdenum end-pieces. The alloying material A is a silver-lead-antimony alloy which may also include silicon, the material B for attaching the terminals is coppersilver alloy and the PN junction forming material aluminium. The temperature of the assembly is raised to 800‹ C., held there, raised further to 880‹ C. and then held there before the final oooling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB336464A GB1039566A (en) | 1964-01-27 | 1964-01-27 | Semi-conductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB336464A GB1039566A (en) | 1964-01-27 | 1964-01-27 | Semi-conductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1039566A true GB1039566A (en) | 1966-08-17 |
Family
ID=9756930
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB336464A Expired GB1039566A (en) | 1964-01-27 | 1964-01-27 | Semi-conductor device |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1039566A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3632489A1 (en) * | 1985-10-03 | 1987-04-16 | Mitsubishi Electric Corp | Semiconductor device |
-
1964
- 1964-01-27 GB GB336464A patent/GB1039566A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3632489A1 (en) * | 1985-10-03 | 1987-04-16 | Mitsubishi Electric Corp | Semiconductor device |
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