GB1000023A - Semi-conductor devices - Google Patents
Semi-conductor devicesInfo
- Publication number
- GB1000023A GB1000023A GB484063A GB484063A GB1000023A GB 1000023 A GB1000023 A GB 1000023A GB 484063 A GB484063 A GB 484063A GB 484063 A GB484063 A GB 484063A GB 1000023 A GB1000023 A GB 1000023A
- Authority
- GB
- United Kingdom
- Prior art keywords
- base
- diaphragm
- wire
- wafer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000012212 insulator Substances 0.000 abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
1,000,023. Semi-conductor devices. WESTINGHOUSE BRAKE & SIGNAL CO. Ltd. Jan. 24, 1964 [Feb. 6, 1963; March 21, 1963], Nos. 4840/63 and 11252/63. Heading H1K. A semi-conductor wafer 5, Fig. 1A, containing a PN junction is mounted (bonded or unbonded) on a conducting base 1, is surrounded by an insulating annulus 13 secured-as by a bracket 12-to the base, and has an unbonded electrode 8 on its upper face. This electrode is carried by a conducting diaphragm 9, e.g. of beryllium copper, secured at its periphery to the annulus 13 and urged towards the wafer by external resilient means. In Fig. 2A this means is a spring 25 incorporated in a heat-dissipating mounting frame 20 within which the assembly of Fig. 1A may be mounted base down, as shown, or base up. In Fig. 2B the wafer 4 has two junctions and electrode connections with the copper base 1, the diaphragm 10 and a wire 30 which passes through the hermetically sealed insulator 34. It is shown mounted in a heat dissipating frame 20 which may incorporate cooling fins (not shown) and within which the resilient means for the unbonded contact with diaphragm 10 is provided by a spring washer 23. The wafer may be a diode, in which case the central aperture 33 in the diaphragm, the insulator 34 and the wire 30 will be omitted. Fig. 4B shows a diode 4 in an alternative mounting to which it may be permanently or detachably secured, the electrodes being the base 51 of the mounting and a conducting stem 65 which is fitted on the diaphragm 10 and urges it onto the diode under the action of spring members 66. The stem 65 may be made hollow to accommodate a wire, such as the wire 30 of Fig. 2B, for use of the same mount with three electrode devices.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB484063A GB1000023A (en) | 1963-02-06 | 1963-02-06 | Semi-conductor devices |
BE643415A BE643415A (en) | 1963-02-06 | 1964-02-05 | |
FR962704A FR1381184A (en) | 1963-02-06 | 1964-02-05 | Asymmetric conductivity device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB484063A GB1000023A (en) | 1963-02-06 | 1963-02-06 | Semi-conductor devices |
GB1125263 | 1963-03-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1000023A true GB1000023A (en) | 1965-08-04 |
Family
ID=26239407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB484063A Expired GB1000023A (en) | 1963-02-06 | 1963-02-06 | Semi-conductor devices |
Country Status (2)
Country | Link |
---|---|
BE (1) | BE643415A (en) |
GB (1) | GB1000023A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3412294A (en) * | 1965-06-23 | 1968-11-19 | Welding Research Inc | Arrangement of the diode as a single unit and in a group |
US3491271A (en) * | 1965-07-01 | 1970-01-20 | English Electric Co Ltd | Housing for electrically conductive heat-dissipating devices |
US3513361A (en) * | 1968-05-09 | 1970-05-19 | Westinghouse Electric Corp | Flat package electrical device |
US3571663A (en) * | 1969-01-08 | 1971-03-23 | Chemetron Corp | Releasable clamp assembly for a solid state circuit element |
US3651383A (en) * | 1970-02-05 | 1972-03-21 | Gen Electric | Unitary high power semiconductor subassembly suitable for mounting on a separable heat sink |
US3740618A (en) * | 1970-09-29 | 1973-06-19 | Bbc Brown Boveri & Cie | Semiconductor unit and method of manufacture thereof |
EP0921565A2 (en) * | 1997-12-08 | 1999-06-09 | Kabushiki Kaisha Toshiba | Package for semiconductor power device and method for assembling the same |
-
1963
- 1963-02-06 GB GB484063A patent/GB1000023A/en not_active Expired
-
1964
- 1964-02-05 BE BE643415A patent/BE643415A/xx unknown
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3412294A (en) * | 1965-06-23 | 1968-11-19 | Welding Research Inc | Arrangement of the diode as a single unit and in a group |
US3491271A (en) * | 1965-07-01 | 1970-01-20 | English Electric Co Ltd | Housing for electrically conductive heat-dissipating devices |
US3513361A (en) * | 1968-05-09 | 1970-05-19 | Westinghouse Electric Corp | Flat package electrical device |
US3571663A (en) * | 1969-01-08 | 1971-03-23 | Chemetron Corp | Releasable clamp assembly for a solid state circuit element |
US3651383A (en) * | 1970-02-05 | 1972-03-21 | Gen Electric | Unitary high power semiconductor subassembly suitable for mounting on a separable heat sink |
US3740618A (en) * | 1970-09-29 | 1973-06-19 | Bbc Brown Boveri & Cie | Semiconductor unit and method of manufacture thereof |
EP0921565A2 (en) * | 1997-12-08 | 1999-06-09 | Kabushiki Kaisha Toshiba | Package for semiconductor power device and method for assembling the same |
EP0921565A3 (en) * | 1997-12-08 | 2005-07-27 | Kabushiki Kaisha Toshiba | Package for semiconductor power device and method for assembling the same |
Also Published As
Publication number | Publication date |
---|---|
BE643415A (en) | 1964-05-29 |
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