CH329902A - Verfahren zur Herstellung einer Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer Halbleitervorrichtung

Info

Publication number
CH329902A
CH329902A CH329902DA CH329902A CH 329902 A CH329902 A CH 329902A CH 329902D A CH329902D A CH 329902DA CH 329902 A CH329902 A CH 329902A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor device
semiconductor
Prior art date
Application number
Other languages
English (en)
Inventor
Francis Drake Cyril
Original Assignee
Standard Telephon & Radio Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephon & Radio Ag filed Critical Standard Telephon & Radio Ag
Publication of CH329902A publication Critical patent/CH329902A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/326—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
CH329902D 1953-10-02 1954-10-02 Verfahren zur Herstellung einer Halbleitervorrichtung CH329902A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB27064/53A GB747198A (en) 1953-10-02 1953-10-02 Improvements in or relating to electric semiconductor devices

Publications (1)

Publication Number Publication Date
CH329902A true CH329902A (de) 1958-05-15

Family

ID=10253576

Family Applications (1)

Application Number Title Priority Date Filing Date
CH329902D CH329902A (de) 1953-10-02 1954-10-02 Verfahren zur Herstellung einer Halbleitervorrichtung

Country Status (3)

Country Link
CH (1) CH329902A (de)
DE (1) DE1040131B (de)
GB (1) GB747198A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1155861B (de) * 1957-01-02 1963-10-17 Egyesuelt Izzolampa Nadeltransistor mit einem Halbleiterkoerper aus einem Germaniumkristall und Verfahren zum Herstellen
CN118635464B (zh) * 2024-06-27 2025-09-30 鞍钢股份有限公司 一种抑制结晶器内钢水液面波动的装置及方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE595601A (de) * 1943-03-16
BE466897A (de) * 1946-01-23
NL79448C (de) * 1950-10-25 1900-01-01
BE513801A (de) * 1951-08-29
DE879270C (de) * 1951-10-28 1953-06-11 Licentia Gmbh Verfahren zum Festlegen von Spitzenkontakten von elektrisch unsymmetrisch leitenden Systemen

Also Published As

Publication number Publication date
GB747198A (en) 1956-03-28
DE1040131B (de) 1958-10-02

Similar Documents

Publication Publication Date Title
CH367896A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH336128A (de) Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung
CH422727A (de) Verfahren zur Herstellung eines Halbleitermaterials
CH347268A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH338906A (de) Verfahren zur Herstellung einer Halbleitervorrichtung und gemäss diesem Verfahren hergestellte Halbleitervorrichtung
CH349346A (de) Verfahren zur Herstellung von Halbleitereinrichtungen
CH370842A (de) Verfahren zur Herstellung von Halbleitervorrichtungen
CH341572A (de) Verfahren zur Herstellung eines Halbleitergerätes
CH357470A (de) Verfahren zur Herstellung von Halbleitervorrichtungen
CH381329A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH403991A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH391111A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH395349A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH354168A (de) Verfahren zur Herstellung einer elektrischen Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung
CH362149A (de) Verfahren zur Herstellung einer Halbleitervorrichtung und nach diesem Verfahren hergestellte Halbleitervorrichtung
AT187556B (de) Verfahren zur Herstellung eines Halbleiters mit einer PN-Verbindung
CH418466A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH351031A (de) Verfahren zur Herstellung von Halbleiter-Vorrichtungen
CH319753A (de) Verfahren zur Herstellung einer elektrischen Halbleitervorrichtung
CH350722A (de) Verfahren zur Herstellung einer Halbleiter-Vorrichtung
CH329902A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH350723A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH368240A (de) Verfahren zur Herstellung einer Halbleiteranordnung
CH362751A (de) Verfahren zur Herstellung einer Halbleitervorrichtung
CH399598A (de) Verfahren zur Herstellung einer Halbleiteranordnung