CH294487A - Verfahren zur Herstellung von Halbleiterelementen. - Google Patents

Verfahren zur Herstellung von Halbleiterelementen.

Info

Publication number
CH294487A
CH294487A CH294487DA CH294487A CH 294487 A CH294487 A CH 294487A CH 294487D A CH294487D A CH 294487DA CH 294487 A CH294487 A CH 294487A
Authority
CH
Switzerland
Prior art keywords
semiconductor elements
manufacturing semiconductor
manufacturing
elements
semiconductor
Prior art date
Application number
Other languages
English (en)
Inventor
Gmbh Sueddeuts Apparate-Fabrik
Original Assignee
Sueddeutsche Apparate Fabrik G
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sueddeutsche Apparate Fabrik G filed Critical Sueddeutsche Apparate Fabrik G
Publication of CH294487A publication Critical patent/CH294487A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/006—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/067—Graded energy gap
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/936—Graded energy gap

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electromagnetism (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Silicon Compounds (AREA)
CH294487D 1949-04-06 1950-04-06 Verfahren zur Herstellung von Halbleiterelementen. CH294487A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEP0039090 1949-04-06

Publications (1)

Publication Number Publication Date
CH294487A true CH294487A (de) 1953-11-15

Family

ID=7376279

Family Applications (1)

Application Number Title Priority Date Filing Date
CH294487D CH294487A (de) 1949-04-06 1950-04-06 Verfahren zur Herstellung von Halbleiterelementen.

Country Status (5)

Country Link
US (1) US2701216A (de)
CH (1) CH294487A (de)
DE (1) DE883784C (de)
FR (1) FR1107452A (de)
GB (1) GB682105A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1228342B (de) * 1954-07-14 1966-11-10 Siemens Ag Diffusionsverfahren zum Dotieren einer Oberflaechenschicht von festen Halbleiterkoerpern

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NL178978B (nl) * 1952-06-19 Texaco Ag Werkwijze voor het bereiden van een smeervet op basis van lithiumzeep.
NL180750B (nl) * 1952-08-20 Bristol Myers Co Werkwijze voor het bereiden van een 7-amino-3-cefem-4-carbonzuur derivaat door een 7-acylamino-3-cefem-4-carbonzuur derivaat om te zetten.
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
US2836520A (en) * 1953-08-17 1958-05-27 Westinghouse Electric Corp Method of making junction transistors
GB778383A (en) * 1953-10-02 1957-07-03 Standard Telephones Cables Ltd Improvements in or relating to the production of material for semi-conductors
US2861017A (en) * 1953-09-30 1958-11-18 Honeywell Regulator Co Method of preparing semi-conductor devices
NL193073A (de) * 1954-03-05
NL87348C (de) * 1954-03-19 1900-01-01
NL233004A (de) * 1954-05-18 1900-01-01
US2928761A (en) * 1954-07-01 1960-03-15 Siemens Ag Methods of producing junction-type semi-conductor devices
DE1033784B (de) * 1954-12-07 1958-07-10 Siemens Ag Verfahren zur Nachbehandlung eines Halbleiterwerkstoffes fuer Richtleiter, Transistoren u. dgl.
US2847624A (en) * 1955-02-24 1958-08-12 Sylvania Electric Prod Semiconductor devices and methods
BE546222A (de) * 1955-03-23
DE1040133B (de) * 1955-05-27 1958-10-02 Siemens Ag Verfahren zur Herstellung von Flaechengleichrichtern mit einem Halbleiter aus einer Zweistoff-Verbindung
US2895858A (en) * 1955-06-21 1959-07-21 Hughes Aircraft Co Method of producing semiconductor crystal bodies
DE1227433B (de) * 1955-07-28 1966-10-27 Siemens Ag Verfahren zum Einbau definierter Stoerstellen in Metall- oder Halbleiterschichten
US2827403A (en) * 1956-08-06 1958-03-18 Pacific Semiconductors Inc Method for diffusing active impurities into semiconductor materials
DE1130078B (de) * 1956-08-10 1962-05-24 Siemens Ag Verfahren zur Dotierung von Halbleiterkristallen fuer Halbleiterbauelemente
GB878765A (en) * 1956-11-05 1961-10-04 Plessey Co Ltd Improvements in and relating to processes for the manufacture of semiconductor materials
NL244520A (de) * 1958-10-23
US3154439A (en) * 1959-04-09 1964-10-27 Sprague Electric Co Method for forming a protective skin for transistor
NL262369A (de) * 1959-05-28 1900-01-01
US3009834A (en) * 1959-10-29 1961-11-21 Jacques M Hanlet Process of forming an electroluminescent article and the resulting article
US3190773A (en) * 1959-12-30 1965-06-22 Ibm Vapor deposition process to form a retrograde impurity distribution p-n junction formation wherein the vapor contains both donor and acceptor impurities
NL260906A (de) * 1960-02-12
US3098774A (en) * 1960-05-02 1963-07-23 Mark Albert Process for producing single crystal silicon surface layers
US3168422A (en) * 1960-05-09 1965-02-02 Merck & Co Inc Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited
IT649936A (de) * 1960-05-09
NL127213C (de) * 1960-06-10
US3172857A (en) * 1960-06-14 1965-03-09 Method for probucmg homogeneously boped monocrystalline bodies of ele- mental semiconductors
NL266513A (de) * 1960-07-01
NL274847A (de) * 1961-02-16
US3101280A (en) * 1961-04-05 1963-08-20 Ibm Method of preparing indium antimonide films
DE1138481C2 (de) * 1961-06-09 1963-05-22 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
DE1639545B1 (de) * 1961-08-21 1969-09-04 Siemens Ag Verfahren zum Herstellen einer Halbleiteranordnung mit Zonen unterschiedlichen Leitungstyp
US3211583A (en) * 1961-09-19 1965-10-12 Melpar Inc Pyrolytic deposition of germanium
US3170825A (en) * 1961-10-02 1965-02-23 Merck & Co Inc Delaying the introduction of impurities when vapor depositing an epitaxial layer on a highly doped substrate
US3173802A (en) * 1961-12-14 1965-03-16 Bell Telephone Labor Inc Process for controlling gas phase composition
NL288035A (de) * 1962-01-24
US3152932A (en) * 1962-01-29 1964-10-13 Hughes Aircraft Co Reduction in situ of a dipolar molecular gas adhering to a substrate
US3178798A (en) * 1962-05-09 1965-04-20 Ibm Vapor deposition process wherein the vapor contains both donor and acceptor impurities
GB1053381A (de) * 1963-02-08
GB1093822A (en) * 1963-07-18 1967-12-06 Plessey Uk Ltd Improvements in or relating to the manufacture of semiconductor devices
US3355318A (en) * 1963-09-26 1967-11-28 Union Carbide Corp Gas plating metal deposits comprising boron
US3206339A (en) * 1963-09-30 1965-09-14 Philco Corp Method of growing geometricallydefined epitaxial layer without formation of undesirable crystallites
DE1286512B (de) * 1963-10-08 1969-01-09 Siemens Ag Verfahren zur Herstellung von insbesondere stabfoermigen Halbleiterkristallen mit ueber den ganzen Kristall homogener oder annaehernd homogener Dotierung
DE1245335B (de) * 1964-06-26 1967-07-27 Siemens Ag Verfahren zur Herstellung einkristalliner, homogen bordotierter, insbesondere aus Silicium oder Germanium bestehender Aufwachsschichten auf einkristallinen Grundkoerpern
DE1276606B (de) * 1965-06-28 1968-09-05 Siemens Ag Verfahren zum Herstellen einkristalliner dotierter Schichten aus Halbleitermaterial durch epitaktisches Aufwachsen

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US1964322A (en) * 1930-11-07 1934-06-26 Corning Glass Works Electrically conducting coating on vitreous substances and method of producing it
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US2217205A (en) * 1937-08-26 1940-10-08 Bell Telephone Labor Inc Photoelectric tube
US2313410A (en) * 1939-03-31 1943-03-09 Bell Telephone Labor Inc Preparation of boron compositions
US2501051A (en) * 1943-02-11 1950-03-21 Duriron Co Siliconizing processes
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US2467734A (en) * 1945-04-12 1949-04-19 Farnsworth Res Corp Shading compensating mosaic screen electrode
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US2556711A (en) * 1947-10-29 1951-06-12 Bell Telephone Labor Inc Method of producing rectifiers and rectifier material
US2552626A (en) * 1948-02-17 1951-05-15 Bell Telephone Labor Inc Silicon-germanium resistor and method of making it

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1228342B (de) * 1954-07-14 1966-11-10 Siemens Ag Diffusionsverfahren zum Dotieren einer Oberflaechenschicht von festen Halbleiterkoerpern

Also Published As

Publication number Publication date
DE883784C (de) 1953-06-03
FR1107452A (fr) 1956-01-03
GB682105A (en) 1952-11-05
US2701216A (en) 1955-02-01

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