CA2747840A1 - Method for producing thin, free-standing layers of solid state materials with structured surfaces - Google Patents

Method for producing thin, free-standing layers of solid state materials with structured surfaces Download PDF

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Publication number
CA2747840A1
CA2747840A1 CA 2747840 CA2747840A CA2747840A1 CA 2747840 A1 CA2747840 A1 CA 2747840A1 CA 2747840 CA2747840 CA 2747840 CA 2747840 A CA2747840 A CA 2747840A CA 2747840 A1 CA2747840 A1 CA 2747840A1
Authority
CA
Canada
Prior art keywords
auxiliary layer
layer
solid state
auxiliary
state material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA 2747840
Other languages
English (en)
French (fr)
Inventor
Lukas Lichtensteiger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltectra GmbH
Original Assignee
Siltectra GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltectra GmbH filed Critical Siltectra GmbH
Publication of CA2747840A1 publication Critical patent/CA2747840A1/en
Abandoned legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00634Processes for shaping materials not provided for in groups B81C1/00444 - B81C1/00626
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00Grinding, lapping or polishing of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19Preparing inhomogeneous wafers
    • H10P90/1904Preparing vertically inhomogeneous wafers
    • H10P90/1906Preparing SOI wafers
    • H10P90/1914Preparing SOI wafers using bonding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • H10W10/181Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00Manufacture or treatment of microstructural devices or systems
    • B81C2201/03Processes for manufacturing substrate-free structures
    • B81C2201/038Processes for manufacturing substrate-free structures not provided for in B81C2201/034 - B81C2201/036
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00Severing by tearing or breaking
    • Y10T225/10Methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mining & Mineral Resources (AREA)
  • Mechanical Engineering (AREA)
  • Micromachines (AREA)
  • Printing Methods (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Photovoltaic Devices (AREA)
  • Laser Beam Processing (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA 2747840 2008-12-23 2009-12-18 Method for producing thin, free-standing layers of solid state materials with structured surfaces Abandoned CA2747840A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US14046608P 2008-12-23 2008-12-23
US61/140,466 2008-12-23
US17544709P 2009-05-04 2009-05-04
US61/175,447 2009-05-04
US17610509P 2009-05-06 2009-05-06
US61/176,105 2009-05-06
PCT/EP2009/067539 WO2010072675A2 (en) 2008-12-23 2009-12-18 Method for producing thin, free-standing layers of solid state materials with structured surfaces

Publications (1)

Publication Number Publication Date
CA2747840A1 true CA2747840A1 (en) 2010-07-01

Family

ID=42288178

Family Applications (1)

Application Number Title Priority Date Filing Date
CA 2747840 Abandoned CA2747840A1 (en) 2008-12-23 2009-12-18 Method for producing thin, free-standing layers of solid state materials with structured surfaces

Country Status (12)

Country Link
US (1) US8877077B2 (https=)
EP (3) EP2620408B1 (https=)
JP (1) JP5762973B2 (https=)
KR (1) KR101527627B1 (https=)
CN (1) CN102325717B (https=)
AU (1) AU2009331646A1 (https=)
BR (1) BRPI0923536A2 (https=)
CA (1) CA2747840A1 (https=)
ES (1) ES2418142T3 (https=)
MX (1) MX2011006750A (https=)
RU (1) RU2011130872A (https=)
WO (1) WO2010072675A2 (https=)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009061353A2 (en) 2007-11-02 2009-05-14 President And Fellows Of Harvard College Production of free-standing solid state layers by thermal processing of substrates with a polymer
CN101781461B (zh) * 2009-01-16 2012-01-25 清华大学 电致伸缩复合材料及其制备方法
US8703521B2 (en) * 2009-06-09 2014-04-22 International Business Machines Corporation Multijunction photovoltaic cell fabrication
US8802477B2 (en) 2009-06-09 2014-08-12 International Business Machines Corporation Heterojunction III-V photovoltaic cell fabrication
US8633097B2 (en) 2009-06-09 2014-01-21 International Business Machines Corporation Single-junction photovoltaic cell
US8852994B2 (en) 2010-05-24 2014-10-07 Masimo Semiconductor, Inc. Method of fabricating bifacial tandem solar cells
US8455290B2 (en) * 2010-09-04 2013-06-04 Masimo Semiconductor, Inc. Method of fabricating epitaxial structures
US8841203B2 (en) * 2011-06-14 2014-09-23 International Business Machines Corporation Method for forming two device wafers from a single base substrate utilizing a controlled spalling process
US8748296B2 (en) * 2011-06-29 2014-06-10 International Business Machines Corporation Edge-exclusion spalling method for improving substrate reusability
DE102012001620B4 (de) 2012-01-30 2025-02-13 Siltectra Gmbh Verfahren zur Herstellung von dünnen Platten aus Werkstoffen geringer Duktilität
KR101332306B1 (ko) * 2012-03-30 2013-11-22 한국기계연구원 프리스탠딩 나노 박막 제조방법
US20130316538A1 (en) * 2012-05-23 2013-11-28 International Business Machines Corporation Surface morphology generation and transfer by spalling
BR102012016393A2 (pt) * 2012-07-02 2015-04-07 Rexam Beverage Can South America S A Dispositivo de impressão em latas, processo de impressão em latas, lata impressa e blanqueta
DE102012013539A1 (de) 2012-07-06 2014-01-09 Siltectra Gmbh Wafer und Verfahren zur Herstellung von Wafern mit Oberflächenstrukturen
DE102013007672A1 (de) 2013-05-03 2014-11-06 Siltectra Gmbh Verfahren und Vorrichtung zur Waferherstellung mit vordefinierter Bruchauslösestelle
DE102013007671A1 (de) 2013-05-03 2014-11-06 Siltectra Gmbh Verfahren zur Herstellung eines Wafers mit Trägereinheit
DE102013007673A1 (de) 2013-05-03 2014-11-06 Siltectra Gmbh Verfahren zur Herstellung von Wafern mittels einer vordefinierten Spannungsverteilung
DE102013017272A1 (de) 2013-06-06 2014-12-11 Siltectra Gmbh Vorrichtung und Verfahren zum Erzeugen von Schichtanordnungen mittels fluidischer Fließbarriere
US9245955B2 (en) 2013-06-28 2016-01-26 Stmicroelectronics, Inc. Embedded shape SiGe for strained channel transistors
KR20150006121A (ko) * 2013-07-08 2015-01-16 서울대학교산학협력단 폴리아세틸렌 나노파이버 온도센서
DE102013014615A1 (de) 2013-09-02 2015-03-05 Siltectra Gmbh Vorrichtung und Verfahren zur Herstellung eines Wafers mit einer Rissverlaufsbeeinflussung
DE102013014623A1 (de) 2013-09-02 2015-03-05 Siltectra Gmbh Vorrichtung und Verfahren zur Herstellung eines Wafers mit einer selektiven Positionierung im Trägersystem
DE102014013107A1 (de) 2013-10-08 2015-04-09 Siltectra Gmbh Neuartiges Waferherstellungsverfahren
DE102013016682A1 (de) 2013-10-08 2015-04-09 Siltectra Gmbh Erzeugung einer Rissauslösestelle oder einer Rissführung zum verbesserten Abspalten einer Festkörperschicht von einem Festkörper
DE102013016693A1 (de) 2013-10-08 2015-04-09 Siltectra Gmbh Herstellungsverfahren für Festkörperelemente mittels Laserbehandlung und temperaturinduzierten Spannungen
DE102013016665A1 (de) 2013-10-08 2015-04-09 Siltectra Gmbh Kombiniertes Waferherstellungsverfahren mit lonenimplantation und temperaturinduzierten Spannungen
DE102014014486A1 (de) 2013-10-08 2015-04-09 Siltectra Gmbh Neuartiges Waferherstellungsverfahren
DE102013016669A1 (de) 2013-10-08 2015-04-09 Siltectra Gmbh Kombiniertes Herstellungsverfahren zum Abtrennen mehrerer dünner Festkörperschichten von einem dicken Festkörper
US20150201504A1 (en) * 2014-01-15 2015-07-16 Applied Nanotech, Inc. Copper particle composition
DE102015000449A1 (de) 2015-01-15 2016-07-21 Siltectra Gmbh Festkörperteilung mittels Stoffumwandlung
DE102014004574A1 (de) 2014-03-28 2015-10-01 Siltectra Gmbh Verfahren zur Herstellung von Festkörperschichten mittels lokaler Modifikation von Leit-Stütz-Struktur-Eigenschaften einer mehrschichtigen Anordnung
DE102014006328A1 (de) 2014-04-30 2015-11-05 Siltectra Gmbh Kombiniertes Festkörperherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen zur Erzeugung dreidimensionaler Festkörper
DE102014014422A1 (de) * 2014-09-29 2016-03-31 Siltectra Gmbh Kombiniertes Waferherstellungsverfahren mit einer Löcher aufweisenden Aufnahmeschicht
DE102014014420A1 (de) 2014-09-29 2016-04-14 Siltectra Gmbh Kombiniertes Waferherstellungsverfahren mit einer Mehrkomponentenaufnahmeschicht
DE102015103118A1 (de) * 2014-10-06 2016-04-07 Siltectra Gmbh Splitting-Verfahren und Verwendung eines Materials in einem Splitting-Verfahren
WO2016083609A2 (de) 2014-11-27 2016-06-02 Siltectra Gmbh Laserbasiertes trennverfahren
KR102753492B1 (ko) * 2014-11-27 2025-01-14 실텍트라 게엠베하 재료의 전환을 이용한 고체의 분할
DE102015000450A1 (de) * 2015-01-15 2016-07-21 Siltectra Gmbh Abtrennvorrichtung zum spanfreien Abtrennen von Wafern von Spendersubstraten
DE102015003369A1 (de) 2015-03-16 2016-09-22 Siltectra Gmbh Transparenter und hochstabiler Displayschutz
DE102015104147B4 (de) 2015-03-19 2019-09-12 Osram Opto Semiconductors Gmbh Verfahren zur Ablösung eines Aufwachssubstrats von einer Schichtenfolge
DE102015004347A1 (de) 2015-04-02 2016-10-06 Siltectra Gmbh Erzeugung von physischen Modifikationen mittels LASER im Inneren eines Festkörpers
DE102015006971A1 (de) 2015-04-09 2016-10-13 Siltectra Gmbh Verfahren zum verlustarmen Herstellen von Mehrkomponentenwafern
DE102015004603A1 (de) 2015-04-09 2016-10-13 Siltectra Gmbh Kombiniertes Waferherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen
DE102015008034A1 (de) 2015-06-23 2016-12-29 Siltectra Gmbh Verfahren zum Führen eines Risses im Randbereich eines Spendersubstrats
DE102015008037A1 (de) 2015-06-23 2016-12-29 Siltectra Gmbh Verfahren zum Führen eines Risses im Randbereich eines Spendersubstrats
DE112016004265T5 (de) 2015-09-21 2018-06-07 Monolithic 3D Inc. 3d halbleitervorrichtung und -struktur
DE102016000051A1 (de) 2016-01-05 2017-07-06 Siltectra Gmbh Verfahren und Vorrichtung zum planaren Erzeugen von Modifikationen in Festkörpern
EP3427044B1 (en) * 2016-03-08 2025-07-16 Arizona Board of Regents on behalf of Arizona State University Sound-assisted crack propagation for semiconductor wafering
DE102016014821A1 (de) 2016-12-12 2018-06-14 Siltectra Gmbh Verfahren zum Dünnen von mit Bauteilen versehenen Festkörperschichten
EP4166270B1 (de) * 2016-03-22 2024-10-16 Siltectra GmbH Verfahren zum abtrennen durch laserbestrahlung einer festkörperschicht von einem festkörper
WO2017162800A1 (de) 2016-03-24 2017-09-28 Siltectra Gmbh Polymer-hybrid-material zur verwendung in einem splitting-verfahren
DE102016105616A1 (de) 2016-03-24 2017-09-28 Siltectra Gmbh Polymer-Hybrid-Material, dessen Verwendung in einem Splitting-Verfahren und Verfahren zur Herstellung des Polymer-Hybrid-Materials
GB201616955D0 (en) * 2016-10-06 2016-11-23 University Of Newcastle Upon Tyne Micro-milling
DE102017010284A1 (de) 2017-11-07 2019-05-09 Siltectra Gmbh Verfahren zum Dünnen von mit Bauteilen versehenen Festkörperschichten
WO2018108938A1 (de) 2016-12-12 2018-06-21 Siltectra Gmbh Verfahren zum dünnen von mit bauteilen versehenen festkörperschichten
CN110691671B (zh) 2017-04-20 2023-10-10 西尔特克特拉有限责任公司 用于具有限定地定向的改性线的晶片制造的方法
DE102018001605A1 (de) 2018-03-01 2019-09-05 Siltectra Gmbh Verfahren zum Kompensieren von Verformungen eines mittels Laserstrahl behandelten und/oder beschichteten Festkörpers
DE102018111450B4 (de) * 2018-05-14 2024-06-20 Infineon Technologies Ag Verfahren zum Verarbeiten eines Breiter-Bandabstand-Halbleiterwafers, Verfahren zum Bilden einer Mehrzahl von dünnen Breiter-Bandabstand-Halbleiterwafern und Breiter-Bandabstand-Halbleiterwafer
CN110713166B (zh) * 2018-07-13 2020-09-01 浙江清华柔性电子技术研究院 微流体器件及其制备方法、微流体系统
CN109345959A (zh) * 2018-10-12 2019-02-15 京东方科技集团股份有限公司 一种柔性衬底、柔性显示面板、柔性显示装置和制作方法
CN109665486B (zh) * 2018-12-24 2020-08-28 中山大学 微杯及其转印制备方法和应用
US11787690B1 (en) 2020-04-03 2023-10-17 Knowles Electronics, Llc. MEMS assembly substrates including a bond layer
CN112276176A (zh) * 2020-10-20 2021-01-29 哈尔滨工业大学 一种应用于折叠波导慢波结构的微铣削毛刺抑制方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4582559A (en) * 1984-04-27 1986-04-15 Gould Inc. Method of making thin free standing single crystal films
US6943448B2 (en) * 2003-01-23 2005-09-13 Akustica, Inc. Multi-metal layer MEMS structure and process for making the same
CN1227153C (zh) * 2003-12-25 2005-11-16 中国电子科技集团公司第十三研究所 全干法硅-铝-硅结构微机械加工方法
US9390999B2 (en) * 2005-03-23 2016-07-12 Noriaki Kawamura Metal substrate/metal impregnated carbon composite material structure and method for manufacturing said structure
EP1863100A1 (en) * 2006-05-30 2007-12-05 INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) Method for the production of thin substrates
CN101274738A (zh) * 2007-03-28 2008-10-01 中国科学院微电子研究所 基于多晶硅特性制作热剪切应力传感器的方法

Also Published As

Publication number Publication date
EP2620408A1 (en) 2013-07-31
EP2620409A1 (en) 2013-07-31
EP2620409B1 (en) 2017-03-01
ES2418142T3 (es) 2013-08-12
EP2620408B1 (en) 2016-03-09
US8877077B2 (en) 2014-11-04
JP2012513312A (ja) 2012-06-14
EP2379440A2 (en) 2011-10-26
KR20110110781A (ko) 2011-10-07
AU2009331646A8 (en) 2011-08-04
BRPI0923536A2 (pt) 2016-01-26
MX2011006750A (es) 2011-09-06
CN102325717B (zh) 2015-11-25
AU2009331646A2 (en) 2011-09-15
KR101527627B1 (ko) 2015-06-10
WO2010072675A2 (en) 2010-07-01
AU2009331646A1 (en) 2011-07-28
JP5762973B2 (ja) 2015-08-12
EP2379440B1 (en) 2013-04-17
CN102325717A (zh) 2012-01-18
RU2011130872A (ru) 2013-01-27
WO2010072675A3 (en) 2011-04-14
US20110259936A1 (en) 2011-10-27

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Date Code Title Description
FZDE Discontinued

Effective date: 20141218