CN102325717B - 生产具有结构化表面的薄的、独立式固态材料层的方法 - Google Patents

生产具有结构化表面的薄的、独立式固态材料层的方法 Download PDF

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Publication number
CN102325717B
CN102325717B CN200980157357.8A CN200980157357A CN102325717B CN 102325717 B CN102325717 B CN 102325717B CN 200980157357 A CN200980157357 A CN 200980157357A CN 102325717 B CN102325717 B CN 102325717B
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auxiliary layer
layer
solid
pattern
stress
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CN102325717A (zh
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L.利希滕斯泰格
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Siltectra GmbH
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Siltectra GmbH
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00634—Processes for shaping materials not provided for in groups B81C1/00444 - B81C1/00626
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/03—Processes for manufacturing substrate-free structures
    • B81C2201/038—Processes for manufacturing substrate-free structures not provided for in B81C2201/034 - B81C2201/036
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/10—Methods

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mining & Mineral Resources (AREA)
  • Mechanical Engineering (AREA)
  • Micromachines (AREA)
  • Printing Methods (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Photovoltaic Devices (AREA)
  • Laser Beam Processing (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN200980157357.8A 2008-12-23 2009-12-18 生产具有结构化表面的薄的、独立式固态材料层的方法 Active CN102325717B (zh)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US14046608P 2008-12-23 2008-12-23
US61/140466 2008-12-23
US17544709P 2009-05-04 2009-05-04
US61/175447 2009-05-04
US17610509P 2009-05-06 2009-05-06
US61/176105 2009-05-06
PCT/EP2009/067539 WO2010072675A2 (en) 2008-12-23 2009-12-18 Method for producing thin, free-standing layers of solid state materials with structured surfaces

Publications (2)

Publication Number Publication Date
CN102325717A CN102325717A (zh) 2012-01-18
CN102325717B true CN102325717B (zh) 2015-11-25

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Country Status (12)

Country Link
US (1) US8877077B2 (https=)
EP (3) EP2620408B1 (https=)
JP (1) JP5762973B2 (https=)
KR (1) KR101527627B1 (https=)
CN (1) CN102325717B (https=)
AU (1) AU2009331646A1 (https=)
BR (1) BRPI0923536A2 (https=)
CA (1) CA2747840A1 (https=)
ES (1) ES2418142T3 (https=)
MX (1) MX2011006750A (https=)
RU (1) RU2011130872A (https=)
WO (1) WO2010072675A2 (https=)

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US8455290B2 (en) * 2010-09-04 2013-06-04 Masimo Semiconductor, Inc. Method of fabricating epitaxial structures
US8841203B2 (en) * 2011-06-14 2014-09-23 International Business Machines Corporation Method for forming two device wafers from a single base substrate utilizing a controlled spalling process
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Publication number Publication date
EP2620408A1 (en) 2013-07-31
EP2620409A1 (en) 2013-07-31
EP2620409B1 (en) 2017-03-01
ES2418142T3 (es) 2013-08-12
EP2620408B1 (en) 2016-03-09
US8877077B2 (en) 2014-11-04
JP2012513312A (ja) 2012-06-14
EP2379440A2 (en) 2011-10-26
KR20110110781A (ko) 2011-10-07
AU2009331646A8 (en) 2011-08-04
BRPI0923536A2 (pt) 2016-01-26
MX2011006750A (es) 2011-09-06
AU2009331646A2 (en) 2011-09-15
KR101527627B1 (ko) 2015-06-10
CA2747840A1 (en) 2010-07-01
WO2010072675A2 (en) 2010-07-01
AU2009331646A1 (en) 2011-07-28
JP5762973B2 (ja) 2015-08-12
EP2379440B1 (en) 2013-04-17
CN102325717A (zh) 2012-01-18
RU2011130872A (ru) 2013-01-27
WO2010072675A3 (en) 2011-04-14
US20110259936A1 (en) 2011-10-27

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