AU2009331646A1 - Method for producing thin, free-standing layers of solid state materials with structured surfaces - Google Patents
Method for producing thin, free-standing layers of solid state materials with structured surfaces Download PDFInfo
- Publication number
- AU2009331646A1 AU2009331646A1 AU2009331646A AU2009331646A AU2009331646A1 AU 2009331646 A1 AU2009331646 A1 AU 2009331646A1 AU 2009331646 A AU2009331646 A AU 2009331646A AU 2009331646 A AU2009331646 A AU 2009331646A AU 2009331646 A1 AU2009331646 A1 AU 2009331646A1
- Authority
- AU
- Australia
- Prior art keywords
- auxiliary layer
- layer
- solid state
- auxiliary
- state material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
- B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00634—Processes for shaping materials not provided for in groups B81C1/00444 - B81C1/00626
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/19—Preparing inhomogeneous wafers
- H10P90/1904—Preparing vertically inhomogeneous wafers
- H10P90/1906—Preparing SOI wafers
- H10P90/1914—Preparing SOI wafers using bonding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
- H10W10/10—Isolation regions comprising dielectric materials
- H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/03—Processes for manufacturing substrate-free structures
- B81C2201/038—Processes for manufacturing substrate-free structures not provided for in B81C2201/034 - B81C2201/036
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T225/00—Severing by tearing or breaking
- Y10T225/10—Methods
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mining & Mineral Resources (AREA)
- Mechanical Engineering (AREA)
- Micromachines (AREA)
- Printing Methods (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Photovoltaic Devices (AREA)
- Laser Beam Processing (AREA)
- Manufacture Or Reproduction Of Printing Formes (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14046608P | 2008-12-23 | 2008-12-23 | |
| US61/140,466 | 2008-12-23 | ||
| US17544709P | 2009-05-04 | 2009-05-04 | |
| US61/175,447 | 2009-05-04 | ||
| US17610509P | 2009-05-06 | 2009-05-06 | |
| US61/176,105 | 2009-05-06 | ||
| PCT/EP2009/067539 WO2010072675A2 (en) | 2008-12-23 | 2009-12-18 | Method for producing thin, free-standing layers of solid state materials with structured surfaces |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| AU2009331646A1 true AU2009331646A1 (en) | 2011-07-28 |
| AU2009331646A8 AU2009331646A8 (en) | 2011-08-04 |
| AU2009331646A2 AU2009331646A2 (en) | 2011-09-15 |
Family
ID=42288178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU2009331646A Abandoned AU2009331646A1 (en) | 2008-12-23 | 2009-12-18 | Method for producing thin, free-standing layers of solid state materials with structured surfaces |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US8877077B2 (https=) |
| EP (3) | EP2620408B1 (https=) |
| JP (1) | JP5762973B2 (https=) |
| KR (1) | KR101527627B1 (https=) |
| CN (1) | CN102325717B (https=) |
| AU (1) | AU2009331646A1 (https=) |
| BR (1) | BRPI0923536A2 (https=) |
| CA (1) | CA2747840A1 (https=) |
| ES (1) | ES2418142T3 (https=) |
| MX (1) | MX2011006750A (https=) |
| RU (1) | RU2011130872A (https=) |
| WO (1) | WO2010072675A2 (https=) |
Families Citing this family (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009061353A2 (en) | 2007-11-02 | 2009-05-14 | President And Fellows Of Harvard College | Production of free-standing solid state layers by thermal processing of substrates with a polymer |
| CN101781461B (zh) * | 2009-01-16 | 2012-01-25 | 清华大学 | 电致伸缩复合材料及其制备方法 |
| US8703521B2 (en) * | 2009-06-09 | 2014-04-22 | International Business Machines Corporation | Multijunction photovoltaic cell fabrication |
| US8802477B2 (en) | 2009-06-09 | 2014-08-12 | International Business Machines Corporation | Heterojunction III-V photovoltaic cell fabrication |
| US8633097B2 (en) | 2009-06-09 | 2014-01-21 | International Business Machines Corporation | Single-junction photovoltaic cell |
| US8852994B2 (en) | 2010-05-24 | 2014-10-07 | Masimo Semiconductor, Inc. | Method of fabricating bifacial tandem solar cells |
| US8455290B2 (en) * | 2010-09-04 | 2013-06-04 | Masimo Semiconductor, Inc. | Method of fabricating epitaxial structures |
| US8841203B2 (en) * | 2011-06-14 | 2014-09-23 | International Business Machines Corporation | Method for forming two device wafers from a single base substrate utilizing a controlled spalling process |
| US8748296B2 (en) * | 2011-06-29 | 2014-06-10 | International Business Machines Corporation | Edge-exclusion spalling method for improving substrate reusability |
| DE102012001620B4 (de) | 2012-01-30 | 2025-02-13 | Siltectra Gmbh | Verfahren zur Herstellung von dünnen Platten aus Werkstoffen geringer Duktilität |
| KR101332306B1 (ko) * | 2012-03-30 | 2013-11-22 | 한국기계연구원 | 프리스탠딩 나노 박막 제조방법 |
| US20130316538A1 (en) * | 2012-05-23 | 2013-11-28 | International Business Machines Corporation | Surface morphology generation and transfer by spalling |
| BR102012016393A2 (pt) * | 2012-07-02 | 2015-04-07 | Rexam Beverage Can South America S A | Dispositivo de impressão em latas, processo de impressão em latas, lata impressa e blanqueta |
| DE102012013539A1 (de) | 2012-07-06 | 2014-01-09 | Siltectra Gmbh | Wafer und Verfahren zur Herstellung von Wafern mit Oberflächenstrukturen |
| DE102013007672A1 (de) | 2013-05-03 | 2014-11-06 | Siltectra Gmbh | Verfahren und Vorrichtung zur Waferherstellung mit vordefinierter Bruchauslösestelle |
| DE102013007671A1 (de) | 2013-05-03 | 2014-11-06 | Siltectra Gmbh | Verfahren zur Herstellung eines Wafers mit Trägereinheit |
| DE102013007673A1 (de) | 2013-05-03 | 2014-11-06 | Siltectra Gmbh | Verfahren zur Herstellung von Wafern mittels einer vordefinierten Spannungsverteilung |
| DE102013017272A1 (de) | 2013-06-06 | 2014-12-11 | Siltectra Gmbh | Vorrichtung und Verfahren zum Erzeugen von Schichtanordnungen mittels fluidischer Fließbarriere |
| US9245955B2 (en) | 2013-06-28 | 2016-01-26 | Stmicroelectronics, Inc. | Embedded shape SiGe for strained channel transistors |
| KR20150006121A (ko) * | 2013-07-08 | 2015-01-16 | 서울대학교산학협력단 | 폴리아세틸렌 나노파이버 온도센서 |
| DE102013014615A1 (de) | 2013-09-02 | 2015-03-05 | Siltectra Gmbh | Vorrichtung und Verfahren zur Herstellung eines Wafers mit einer Rissverlaufsbeeinflussung |
| DE102013014623A1 (de) | 2013-09-02 | 2015-03-05 | Siltectra Gmbh | Vorrichtung und Verfahren zur Herstellung eines Wafers mit einer selektiven Positionierung im Trägersystem |
| DE102014013107A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Neuartiges Waferherstellungsverfahren |
| DE102013016682A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Erzeugung einer Rissauslösestelle oder einer Rissführung zum verbesserten Abspalten einer Festkörperschicht von einem Festkörper |
| DE102013016693A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Herstellungsverfahren für Festkörperelemente mittels Laserbehandlung und temperaturinduzierten Spannungen |
| DE102013016665A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Kombiniertes Waferherstellungsverfahren mit lonenimplantation und temperaturinduzierten Spannungen |
| DE102014014486A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Neuartiges Waferherstellungsverfahren |
| DE102013016669A1 (de) | 2013-10-08 | 2015-04-09 | Siltectra Gmbh | Kombiniertes Herstellungsverfahren zum Abtrennen mehrerer dünner Festkörperschichten von einem dicken Festkörper |
| US20150201504A1 (en) * | 2014-01-15 | 2015-07-16 | Applied Nanotech, Inc. | Copper particle composition |
| DE102015000449A1 (de) | 2015-01-15 | 2016-07-21 | Siltectra Gmbh | Festkörperteilung mittels Stoffumwandlung |
| DE102014004574A1 (de) | 2014-03-28 | 2015-10-01 | Siltectra Gmbh | Verfahren zur Herstellung von Festkörperschichten mittels lokaler Modifikation von Leit-Stütz-Struktur-Eigenschaften einer mehrschichtigen Anordnung |
| DE102014006328A1 (de) | 2014-04-30 | 2015-11-05 | Siltectra Gmbh | Kombiniertes Festkörperherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen zur Erzeugung dreidimensionaler Festkörper |
| DE102014014422A1 (de) * | 2014-09-29 | 2016-03-31 | Siltectra Gmbh | Kombiniertes Waferherstellungsverfahren mit einer Löcher aufweisenden Aufnahmeschicht |
| DE102014014420A1 (de) | 2014-09-29 | 2016-04-14 | Siltectra Gmbh | Kombiniertes Waferherstellungsverfahren mit einer Mehrkomponentenaufnahmeschicht |
| DE102015103118A1 (de) * | 2014-10-06 | 2016-04-07 | Siltectra Gmbh | Splitting-Verfahren und Verwendung eines Materials in einem Splitting-Verfahren |
| WO2016083609A2 (de) | 2014-11-27 | 2016-06-02 | Siltectra Gmbh | Laserbasiertes trennverfahren |
| KR102753492B1 (ko) * | 2014-11-27 | 2025-01-14 | 실텍트라 게엠베하 | 재료의 전환을 이용한 고체의 분할 |
| DE102015000450A1 (de) * | 2015-01-15 | 2016-07-21 | Siltectra Gmbh | Abtrennvorrichtung zum spanfreien Abtrennen von Wafern von Spendersubstraten |
| DE102015003369A1 (de) | 2015-03-16 | 2016-09-22 | Siltectra Gmbh | Transparenter und hochstabiler Displayschutz |
| DE102015104147B4 (de) | 2015-03-19 | 2019-09-12 | Osram Opto Semiconductors Gmbh | Verfahren zur Ablösung eines Aufwachssubstrats von einer Schichtenfolge |
| DE102015004347A1 (de) | 2015-04-02 | 2016-10-06 | Siltectra Gmbh | Erzeugung von physischen Modifikationen mittels LASER im Inneren eines Festkörpers |
| DE102015006971A1 (de) | 2015-04-09 | 2016-10-13 | Siltectra Gmbh | Verfahren zum verlustarmen Herstellen von Mehrkomponentenwafern |
| DE102015004603A1 (de) | 2015-04-09 | 2016-10-13 | Siltectra Gmbh | Kombiniertes Waferherstellungsverfahren mit Laserbehandlung und temperaturinduzierten Spannungen |
| DE102015008034A1 (de) | 2015-06-23 | 2016-12-29 | Siltectra Gmbh | Verfahren zum Führen eines Risses im Randbereich eines Spendersubstrats |
| DE102015008037A1 (de) | 2015-06-23 | 2016-12-29 | Siltectra Gmbh | Verfahren zum Führen eines Risses im Randbereich eines Spendersubstrats |
| DE112016004265T5 (de) | 2015-09-21 | 2018-06-07 | Monolithic 3D Inc. | 3d halbleitervorrichtung und -struktur |
| DE102016000051A1 (de) | 2016-01-05 | 2017-07-06 | Siltectra Gmbh | Verfahren und Vorrichtung zum planaren Erzeugen von Modifikationen in Festkörpern |
| EP3427044B1 (en) * | 2016-03-08 | 2025-07-16 | Arizona Board of Regents on behalf of Arizona State University | Sound-assisted crack propagation for semiconductor wafering |
| DE102016014821A1 (de) | 2016-12-12 | 2018-06-14 | Siltectra Gmbh | Verfahren zum Dünnen von mit Bauteilen versehenen Festkörperschichten |
| EP4166270B1 (de) * | 2016-03-22 | 2024-10-16 | Siltectra GmbH | Verfahren zum abtrennen durch laserbestrahlung einer festkörperschicht von einem festkörper |
| WO2017162800A1 (de) | 2016-03-24 | 2017-09-28 | Siltectra Gmbh | Polymer-hybrid-material zur verwendung in einem splitting-verfahren |
| DE102016105616A1 (de) | 2016-03-24 | 2017-09-28 | Siltectra Gmbh | Polymer-Hybrid-Material, dessen Verwendung in einem Splitting-Verfahren und Verfahren zur Herstellung des Polymer-Hybrid-Materials |
| GB201616955D0 (en) * | 2016-10-06 | 2016-11-23 | University Of Newcastle Upon Tyne | Micro-milling |
| DE102017010284A1 (de) | 2017-11-07 | 2019-05-09 | Siltectra Gmbh | Verfahren zum Dünnen von mit Bauteilen versehenen Festkörperschichten |
| WO2018108938A1 (de) | 2016-12-12 | 2018-06-21 | Siltectra Gmbh | Verfahren zum dünnen von mit bauteilen versehenen festkörperschichten |
| CN110691671B (zh) | 2017-04-20 | 2023-10-10 | 西尔特克特拉有限责任公司 | 用于具有限定地定向的改性线的晶片制造的方法 |
| DE102018001605A1 (de) | 2018-03-01 | 2019-09-05 | Siltectra Gmbh | Verfahren zum Kompensieren von Verformungen eines mittels Laserstrahl behandelten und/oder beschichteten Festkörpers |
| DE102018111450B4 (de) * | 2018-05-14 | 2024-06-20 | Infineon Technologies Ag | Verfahren zum Verarbeiten eines Breiter-Bandabstand-Halbleiterwafers, Verfahren zum Bilden einer Mehrzahl von dünnen Breiter-Bandabstand-Halbleiterwafern und Breiter-Bandabstand-Halbleiterwafer |
| CN110713166B (zh) * | 2018-07-13 | 2020-09-01 | 浙江清华柔性电子技术研究院 | 微流体器件及其制备方法、微流体系统 |
| CN109345959A (zh) * | 2018-10-12 | 2019-02-15 | 京东方科技集团股份有限公司 | 一种柔性衬底、柔性显示面板、柔性显示装置和制作方法 |
| CN109665486B (zh) * | 2018-12-24 | 2020-08-28 | 中山大学 | 微杯及其转印制备方法和应用 |
| US11787690B1 (en) | 2020-04-03 | 2023-10-17 | Knowles Electronics, Llc. | MEMS assembly substrates including a bond layer |
| CN112276176A (zh) * | 2020-10-20 | 2021-01-29 | 哈尔滨工业大学 | 一种应用于折叠波导慢波结构的微铣削毛刺抑制方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4582559A (en) * | 1984-04-27 | 1986-04-15 | Gould Inc. | Method of making thin free standing single crystal films |
| US6943448B2 (en) * | 2003-01-23 | 2005-09-13 | Akustica, Inc. | Multi-metal layer MEMS structure and process for making the same |
| CN1227153C (zh) * | 2003-12-25 | 2005-11-16 | 中国电子科技集团公司第十三研究所 | 全干法硅－铝－硅结构微机械加工方法 |
| US9390999B2 (en) * | 2005-03-23 | 2016-07-12 | Noriaki Kawamura | Metal substrate/metal impregnated carbon composite material structure and method for manufacturing said structure |
| EP1863100A1 (en) * | 2006-05-30 | 2007-12-05 | INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM vzw (IMEC) | Method for the production of thin substrates |
| CN101274738A (zh) * | 2007-03-28 | 2008-10-01 | 中国科学院微电子研究所 | 基于多晶硅特性制作热剪切应力传感器的方法 |
-
2009
- 2009-12-18 CN CN200980157357.8A patent/CN102325717B/zh active Active
- 2009-12-18 US US13/141,821 patent/US8877077B2/en active Active
- 2009-12-18 WO PCT/EP2009/067539 patent/WO2010072675A2/en not_active Ceased
- 2009-12-18 AU AU2009331646A patent/AU2009331646A1/en not_active Abandoned
- 2009-12-18 KR KR1020117017441A patent/KR101527627B1/ko not_active Expired - Fee Related
- 2009-12-18 EP EP13163963.5A patent/EP2620408B1/en active Active
- 2009-12-18 CA CA 2747840 patent/CA2747840A1/en not_active Abandoned
- 2009-12-18 BR BRPI0923536A patent/BRPI0923536A2/pt not_active IP Right Cessation
- 2009-12-18 EP EP20090807540 patent/EP2379440B1/en active Active
- 2009-12-18 ES ES09807540T patent/ES2418142T3/es active Active
- 2009-12-18 MX MX2011006750A patent/MX2011006750A/es not_active Application Discontinuation
- 2009-12-18 JP JP2011542787A patent/JP5762973B2/ja not_active Expired - Fee Related
- 2009-12-18 EP EP13163979.1A patent/EP2620409B1/en not_active Not-in-force
- 2009-12-18 RU RU2011130872/28A patent/RU2011130872A/ru not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| EP2620408A1 (en) | 2013-07-31 |
| EP2620409A1 (en) | 2013-07-31 |
| EP2620409B1 (en) | 2017-03-01 |
| ES2418142T3 (es) | 2013-08-12 |
| EP2620408B1 (en) | 2016-03-09 |
| US8877077B2 (en) | 2014-11-04 |
| JP2012513312A (ja) | 2012-06-14 |
| EP2379440A2 (en) | 2011-10-26 |
| KR20110110781A (ko) | 2011-10-07 |
| AU2009331646A8 (en) | 2011-08-04 |
| BRPI0923536A2 (pt) | 2016-01-26 |
| MX2011006750A (es) | 2011-09-06 |
| CN102325717B (zh) | 2015-11-25 |
| AU2009331646A2 (en) | 2011-09-15 |
| KR101527627B1 (ko) | 2015-06-10 |
| CA2747840A1 (en) | 2010-07-01 |
| WO2010072675A2 (en) | 2010-07-01 |
| JP5762973B2 (ja) | 2015-08-12 |
| EP2379440B1 (en) | 2013-04-17 |
| CN102325717A (zh) | 2012-01-18 |
| RU2011130872A (ru) | 2013-01-27 |
| WO2010072675A3 (en) | 2011-04-14 |
| US20110259936A1 (en) | 2011-10-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2379440B1 (en) | Method for producing thin, free-standing layers of solid state materials with structured surfaces | |
| TWI426546B (zh) | 利用具聚合物基板之熱製程的自立式固態層的生產方法 | |
| US8501589B2 (en) | Method in the microelectronics fields of forming a monocrystalline layer | |
| US7427526B2 (en) | Deposited thin films and their use in separation and sacrificial layer applications | |
| KR20010049308A (ko) | 복합부재의 분리방법 및 박막제작방법 | |
| CA2406214A1 (en) | Deposited thin films and their use in separation and sarcrificial layer applications | |
| Kajari-Schröder et al. | Lift-off of free-standing layers in the kerfless porous silicon process | |
| ES2986339T3 (es) | Procedimiento de fabricación de una película sobre un soporte que presenta una superficie no plana | |
| CN102137959B (zh) | 晶体制造装置、使用该晶体制造装置制造的半导体设备以及使用该晶体制造装置制造半导体设备的方法 | |
| Björkman et al. | Diamond microstructures for optical micro electromechanical systems | |
| KR101313123B1 (ko) | 미소 구조체 및 그 제조방법 | |
| CN113363148B (zh) | 一种基于蓝宝石衬底的石墨烯薄膜切割方法 | |
| TWI496189B (zh) | 製造具結構表面之固態材料之薄獨立層的方法 | |
| JP2008034843A (ja) | 基板の表面のナノ構造化のための方法 | |
| JP2000150379A (ja) | 結晶質半導体層を有する積層体の製造方法 | |
| JP2003229588A (ja) | 薄膜半導体の製造方法及び太陽電池の製造方法 | |
| CN121573675A (zh) | 一种超表面微透镜阵列高效剥离金刚石的方法及装置 | |
| CN121591167A (zh) | 一种高纵宽比非对称柔性微脊阵列制造方法及其应用 | |
| JP2007007845A (ja) | 微小構造体、およびその作製方法 | |
| GB2489397A (en) | A method of cleaving thin semiconductor substrates using a surface trench and side etching | |
| WO2007145066A1 (ja) | 固相シートの製造方法および固相シートを利用した太陽電池 | |
| KR20030086989A (ko) | 마이크로 구조를 이탈시키기 위한 향상된 희생층 에칭 기법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TH | Corrigenda |
Free format text: IN VOL 25, NO 29, PAGE(S) 3697 UNDER THE HEADING PCT APPLICATIONS THAT HAVE ENTERED THE NATIONAL PHASE - NAME INDEX UNDER THE NAME SITECTRA GMBH, APPLICATION NO. 2009331646, UNDER INID (71) CORRECT THE NAME TO SILTECTRA GMBH |
|
| DA3 | Amendments made section 104 |
Free format text: THE NATURE OF THE AMENDMENT IS AS SHOWN IN THE STATEMENT(S) FILED 10 AUG 2011 |
|
| MK4 | Application lapsed section 142(2)(d) - no continuation fee paid for the application |