CA2658690A1 - Semifinished products with a structured sinter-active surface and a process for their production - Google Patents
Semifinished products with a structured sinter-active surface and a process for their production Download PDFInfo
- Publication number
- CA2658690A1 CA2658690A1 CA002658690A CA2658690A CA2658690A1 CA 2658690 A1 CA2658690 A1 CA 2658690A1 CA 002658690 A CA002658690 A CA 002658690A CA 2658690 A CA2658690 A CA 2658690A CA 2658690 A1 CA2658690 A1 CA 2658690A1
- Authority
- CA
- Canada
- Prior art keywords
- capacitance
- semifinished
- semifinished product
- structured
- semifinished products
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000011265 semifinished product Substances 0.000 title claims abstract description 99
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title abstract description 11
- 239000003870 refractory metal Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 30
- 238000005245 sintering Methods 0.000 claims description 30
- 230000003647 oxidation Effects 0.000 claims description 26
- 238000007254 oxidation reaction Methods 0.000 claims description 26
- 239000000843 powder Substances 0.000 claims description 24
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000011777 magnesium Substances 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 9
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- 239000010955 niobium Substances 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 4
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 239000011575 calcium Substances 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 150000004678 hydrides Chemical class 0.000 claims description 2
- 229910021645 metal ion Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 17
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 7
- 239000003638 chemical reducing agent Substances 0.000 description 7
- 235000011007 phosphoric acid Nutrition 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000002048 anodisation reaction Methods 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 239000011164 primary particle Substances 0.000 description 2
- 239000011819 refractory material Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 238000004438 BET method Methods 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001257 Nb alloy Inorganic materials 0.000 description 1
- 229910020012 Nb—Ti Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- -1 an.timony Chemical compound 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052987 metal hydride Inorganic materials 0.000 description 1
- 150000004681 metal hydrides Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- ZSDSQXJSNMTJDA-UHFFFAOYSA-N trifluralin Chemical compound CCCN(CCC)C1=C([N+]([O-])=O)C=C(C(F)(F)F)C=C1[N+]([O-])=O ZSDSQXJSNMTJDA-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31—Surface property or characteristic of web, sheet or block
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
- Battery Electrode And Active Subsutance (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102006038502 | 2006-08-16 | ||
| DE102006038502.0 | 2006-08-16 | ||
| PCT/EP2007/058293 WO2008019992A1 (en) | 2006-08-16 | 2007-08-10 | Semifinished products with a structured sinter-active surface and a process for their production |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2658690A1 true CA2658690A1 (en) | 2008-02-21 |
Family
ID=38672692
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002658690A Abandoned CA2658690A1 (en) | 2006-08-16 | 2007-08-10 | Semifinished products with a structured sinter-active surface and a process for their production |
Country Status (16)
| Country | Link |
|---|---|
| US (1) | US8999500B2 (enExample) |
| EP (1) | EP2054901B1 (enExample) |
| JP (1) | JP5124578B2 (enExample) |
| KR (1) | KR101451443B1 (enExample) |
| CN (2) | CN102832048B (enExample) |
| AU (1) | AU2007286284A1 (enExample) |
| BR (1) | BRPI0715961A2 (enExample) |
| CA (1) | CA2658690A1 (enExample) |
| DK (1) | DK2054901T3 (enExample) |
| IL (1) | IL195932A (enExample) |
| MX (1) | MX2009001523A (enExample) |
| PT (1) | PT2054901T (enExample) |
| RU (1) | RU2439731C2 (enExample) |
| TW (1) | TWI447767B (enExample) |
| WO (1) | WO2008019992A1 (enExample) |
| ZA (1) | ZA200900660B (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2816216B2 (ja) | 1990-01-31 | 1998-10-27 | 明治製菓株式会社 | ポップコーン膨張菓子の製造法 |
| CN101490097B (zh) | 2006-07-19 | 2011-11-09 | 巴斯夫欧洲公司 | 通过聚合单体溶液液滴生产具有较高渗透性的吸水性聚合物颗粒的方法 |
| WO2012157461A1 (ja) * | 2011-05-13 | 2012-11-22 | 旭硝子株式会社 | 導電性マイエナイト化合物の製造方法 |
| EP2866239B1 (en) * | 2012-06-22 | 2017-12-13 | Showa Denko K.K. | Positive electrode body for capacitor |
| CN103147036B (zh) * | 2012-12-20 | 2015-04-22 | 浙江易锋机械有限公司 | 汽车空调压缩机配件的局部渗碳方法 |
| JP5750200B1 (ja) * | 2013-12-20 | 2015-07-15 | 昭和電工株式会社 | タングステン粉、コンデンサの陽極体、及び電解コンデンサ |
| US20160322170A1 (en) * | 2013-12-20 | 2016-11-03 | Showa Denko K.K. | Tungsten powder, anode body for capacitors, and electrolytic capacitor |
| JP6011593B2 (ja) * | 2014-10-22 | 2016-10-19 | 三菱マテリアル株式会社 | 銅多孔質焼結体の製造方法及び銅多孔質複合部材の製造方法 |
| JP6065059B2 (ja) | 2015-06-12 | 2017-01-25 | 三菱マテリアル株式会社 | 銅多孔質体、銅多孔質複合部材、銅多孔質体の製造方法、及び、銅多孔質複合部材の製造方法 |
| JP6107888B2 (ja) | 2015-06-12 | 2017-04-05 | 三菱マテリアル株式会社 | 銅多孔質体、銅多孔質複合部材、銅多孔質体の製造方法、及び、銅多孔質複合部材の製造方法 |
| JP6733286B2 (ja) * | 2016-04-27 | 2020-07-29 | 三菱マテリアル株式会社 | 銅多孔質体の製造方法、及び、銅多孔質複合部材の製造方法 |
| JP6249060B2 (ja) * | 2016-07-29 | 2017-12-20 | 三菱マテリアル株式会社 | 銅多孔質複合部材 |
| CN109952626B (zh) * | 2016-11-14 | 2021-10-26 | 株式会社村田制作所 | 固体电解电容器元件、固体电解电容器以及固体电解电容器元件的制造方法 |
| JP7317852B2 (ja) * | 2018-10-12 | 2023-07-31 | 東洋アルミニウム株式会社 | アルミニウム電解コンデンサ用電極材の製造方法 |
| US11289276B2 (en) * | 2018-10-30 | 2022-03-29 | Global Advanced Metals Japan K.K. | Porous metal foil and capacitor anodes made therefrom and methods of making same |
| WO2020222995A1 (en) * | 2019-04-29 | 2020-11-05 | Global Advanced Metals Usa, Inc. | A ti-zr alloy power and anode containing the same |
| CN110648849B (zh) * | 2019-09-26 | 2021-12-14 | 宇启材料科技南通有限公司 | 一种阀金属多孔体涂层电极箔及制作方法和电解电容器 |
| CN111872401B (zh) * | 2020-07-30 | 2022-11-08 | 合肥工业大学 | 一种odsw/tzm合金的放电等离子扩散连接方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US651044A (en) * | 1896-05-23 | 1900-06-05 | Warren D King | Time-damper-operating mechanism. |
| US3997341A (en) * | 1974-10-17 | 1976-12-14 | Universal Oil Products Company | Reduced temperature sintering process |
| SU851511A1 (ru) | 1979-10-02 | 1981-07-30 | Предприятие П/Я Г-4816 | Лини дл изготовлени оксидно-полу-пРОВОдНиКОВыХ КОНдЕНСАТОРОВ |
| JPH04107807A (ja) * | 1990-08-28 | 1992-04-09 | Elna Co Ltd | タンタル固体電解コンデンサ |
| RU2061976C1 (ru) * | 1992-09-04 | 1996-06-10 | Малое инновационно-коммерческое предприятие "АВИ-центр" | Способ изготовления оксидно-полупроводникового конденсатора |
| JP3068430B2 (ja) | 1995-04-25 | 2000-07-24 | 富山日本電気株式会社 | 固体電解コンデンサ及びその製造方法 |
| JPH09237742A (ja) * | 1996-02-28 | 1997-09-09 | Hitachi Aic Inc | 固体電解コンデンサの製造方法 |
| US5954856A (en) * | 1996-04-25 | 1999-09-21 | Cabot Corporation | Method of making tantalum metal powder with controlled size distribution and products made therefrom |
| US6051326A (en) * | 1997-04-26 | 2000-04-18 | Cabot Corporation | Valve metal compositions and method |
| DE19817405A1 (de) * | 1998-04-20 | 1999-10-21 | Becromal Spa | Verfahren zur Herstellung einer Anode für elektrolytische Kondensatoren und so hergestellte Anoden |
| RU2230629C2 (ru) | 1998-05-06 | 2004-06-20 | Х.Ц. Штарк, Инк. | Металлические порошки, полученные восстановлением оксидов газообразным магнием |
| WO2000067936A1 (en) | 1998-05-06 | 2000-11-16 | H.C. Starck, Inc. | Metal powders produced by the reduction of the oxides with gaseous magnesium |
| DE59913063D1 (de) | 1998-09-10 | 2006-04-06 | Starck H C Gmbh | Paste zur herstellung von gesinterten refraktärmetallschichten, insbesondere erdsäuremetall-elektrolytkondensatoren oder -anoden |
| US6416730B1 (en) | 1998-09-16 | 2002-07-09 | Cabot Corporation | Methods to partially reduce a niobium metal oxide oxygen reduced niobium oxides |
| US6226173B1 (en) * | 1999-01-26 | 2001-05-01 | Case Western Reserve University | Directionally-grown capacitor anodes |
| FR2788877B1 (fr) * | 1999-01-27 | 2001-11-09 | Nichicon Corp | Condensateur electrolytique d'aluminium |
| EP1162636A1 (de) * | 1999-06-18 | 2001-12-12 | H.C. Starck GmbH | Erdsäuremetall-Elektrolytkondensatoren oder -anoden |
| DE19953946A1 (de) * | 1999-11-09 | 2001-05-10 | Starck H C Gmbh Co Kg | Kondensatorpulver |
| WO2001057928A1 (en) | 2000-02-03 | 2001-08-09 | Case Western Reserve University | High power capacitors from thin layers of metal powder or metal sponge particles |
| DE10307716B4 (de) * | 2002-03-12 | 2021-11-18 | Taniobis Gmbh | Ventilmetall-Pulver und Verfahren zu deren Herstellung |
| BR0204587A (pt) | 2002-11-04 | 2004-06-29 | Cbmm Sa | Processo de produção de pó de nióbio e/ou de tântalo de elevada área superficial |
| KR101098283B1 (ko) * | 2003-04-28 | 2011-12-23 | 쇼와 덴코 가부시키가이샤 | 밸브 작용 금속 소결체, 그 제조방법 및 고체 전해 콘덴서 |
| EP1638891A2 (en) * | 2003-05-19 | 2006-03-29 | Cabot Corporation | Methods of making a niobium metal oxide and oxygen reduced niobium oxides |
| DE102004049039B4 (de) * | 2004-10-08 | 2009-05-07 | H.C. Starck Gmbh | Verfahren zur Herstellung feinteiliger Ventilmetallpulver |
-
2007
- 2007-08-10 KR KR1020097001327A patent/KR101451443B1/ko not_active Expired - Fee Related
- 2007-08-10 CN CN201210273715.5A patent/CN102832048B/zh not_active Expired - Fee Related
- 2007-08-10 EP EP07788351.0A patent/EP2054901B1/en active Active
- 2007-08-10 RU RU2009109161/07A patent/RU2439731C2/ru active
- 2007-08-10 BR BRPI0715961-7A patent/BRPI0715961A2/pt not_active IP Right Cessation
- 2007-08-10 AU AU2007286284A patent/AU2007286284A1/en not_active Abandoned
- 2007-08-10 DK DK07788351.0T patent/DK2054901T3/da active
- 2007-08-10 US US12/377,714 patent/US8999500B2/en active Active
- 2007-08-10 MX MX2009001523A patent/MX2009001523A/es active IP Right Grant
- 2007-08-10 CA CA002658690A patent/CA2658690A1/en not_active Abandoned
- 2007-08-10 JP JP2009524177A patent/JP5124578B2/ja not_active Expired - Fee Related
- 2007-08-10 CN CN2007800301401A patent/CN101501797B/zh not_active Expired - Fee Related
- 2007-08-10 WO PCT/EP2007/058293 patent/WO2008019992A1/en not_active Ceased
- 2007-08-10 PT PT77883510T patent/PT2054901T/pt unknown
- 2007-08-15 TW TW096130072A patent/TWI447767B/zh not_active IP Right Cessation
-
2008
- 2008-12-15 IL IL195932A patent/IL195932A/en active IP Right Grant
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2009
- 2009-01-28 ZA ZA200900660A patent/ZA200900660B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| IL195932A0 (en) | 2009-09-01 |
| PT2054901T (pt) | 2020-01-16 |
| TWI447767B (zh) | 2014-08-01 |
| MX2009001523A (es) | 2009-02-18 |
| AU2007286284A1 (en) | 2008-02-21 |
| EP2054901A1 (en) | 2009-05-06 |
| JP5124578B2 (ja) | 2013-01-23 |
| JP2010500771A (ja) | 2010-01-07 |
| CN101501797B (zh) | 2012-12-26 |
| TW200834622A (en) | 2008-08-16 |
| WO2008019992A1 (en) | 2008-02-21 |
| HK1177811A1 (zh) | 2013-08-30 |
| RU2439731C2 (ru) | 2012-01-10 |
| US8999500B2 (en) | 2015-04-07 |
| ZA200900660B (en) | 2010-04-28 |
| IL195932A (en) | 2014-02-27 |
| CN102832048A (zh) | 2012-12-19 |
| EP2054901B1 (en) | 2019-11-06 |
| CN101501797A (zh) | 2009-08-05 |
| CN102832048B (zh) | 2016-04-13 |
| KR101451443B1 (ko) | 2014-10-15 |
| RU2009109161A (ru) | 2010-09-27 |
| DK2054901T3 (da) | 2020-01-20 |
| KR20090040301A (ko) | 2009-04-23 |
| US20100068510A1 (en) | 2010-03-18 |
| BRPI0715961A2 (pt) | 2013-08-06 |
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