CA2345629A1 - Dispositif a effet de champ a vide et procede de fabrication - Google Patents

Dispositif a effet de champ a vide et procede de fabrication Download PDF

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Publication number
CA2345629A1
CA2345629A1 CA002345629A CA2345629A CA2345629A1 CA 2345629 A1 CA2345629 A1 CA 2345629A1 CA 002345629 A CA002345629 A CA 002345629A CA 2345629 A CA2345629 A CA 2345629A CA 2345629 A1 CA2345629 A1 CA 2345629A1
Authority
CA
Canada
Prior art keywords
vacuum
source
oxide
insulating
depositing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
CA002345629A
Other languages
English (en)
Inventor
Michael D. Potter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Vision Technologies Inc
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of CA2345629A1 publication Critical patent/CA2345629A1/fr
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/05—Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00—Vacuum tubes
    • H01J21/02—Tubes with a single discharge path
    • H01J21/06—Tubes with a single discharge path having electrostatic control means only
    • H01J21/10—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
    • H01J21/105—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode with microengineered cathode and control electrodes, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)

Abstract

La présente invention concerne un dispositif micro-électronique à effet de champ à canal de vide à fréquence ultra-haute (VFED ou IGVFED) comportant une source d'émission de champ latéral (60), un collecteur (150) et au moins une grille isolée (40, 160). Ces grilles isolées sont disposées de préférence de façon à se déployer en alignement de chevauchement avec le bord émetteur (85) de la source d'émission de champ latérale et avec une partie de la région du canal à vide (120). Si les grilles n'existent pas, le dispositif fonctionne comme une diode à très grande vitesse. Pour l'un des procédés de fabrication préférés du dispositif, on utilise un matériau sacrificiel déposé temporairement dans une tranchée pour la région du canal à vide qui est couverte d'une couverture isolante. Un trou d'accès dans la couverture permet l'élimination du matériau sacrificiel. Un aspect d'un procédé de fabrication préféré est de voir le drain agir de préférence également comme obturateur étanche, fermant le trou d'accès et obstruant de façon étanche la région du canal à vide une fois que la région du canal à vide a été évacuée.
CA002345629A 1999-07-26 2000-07-25 Dispositif a effet de champ a vide et procede de fabrication Abandoned CA2345629A1 (fr)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US14557099P 1999-07-26 1999-07-26
US60/145,570 1999-07-26
US47778899A 1999-12-31 1999-12-31
US47698499A 1999-12-31 1999-12-31
US09/477,788 1999-12-31
US09/476,984 1999-12-31
PCT/US2000/020230 WO2001008193A1 (fr) 1999-07-26 2000-07-25 Dispositif a effet de champ a vide et procede de fabrication

Publications (1)

Publication Number Publication Date
CA2345629A1 true CA2345629A1 (fr) 2001-02-01

Family

ID=27386281

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002345629A Abandoned CA2345629A1 (fr) 1999-07-26 2000-07-25 Dispositif a effet de champ a vide et procede de fabrication

Country Status (6)

Country Link
EP (1) EP1116256A1 (fr)
JP (1) JP2003505844A (fr)
KR (1) KR20010075312A (fr)
CN (1) CN1327610A (fr)
CA (1) CA2345629A1 (fr)
WO (1) WO2001008193A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111613662A (zh) * 2020-05-27 2020-09-01 东北大学 偏压诱导共线反铁磁材料产生自旋极化电流及其调控方法

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US7341498B2 (en) 2001-06-14 2008-03-11 Hyperion Catalysis International, Inc. Method of irradiating field emission cathode having nanotubes
AU2002344814A1 (en) 2001-06-14 2003-01-02 Hyperion Catalysis International, Inc. Field emission devices using ion bombarded carbon nanotubes
EP1451844A4 (fr) 2001-06-14 2008-03-12 Hyperion Catalysis Int Dispositifs a emission de champ utilisant des nanotubes de carbone modifies
JP2003308798A (ja) * 2002-04-17 2003-10-31 Toshiba Corp 画像表示装置および画像表示装置の製造方法
CN101086940B (zh) * 2006-06-09 2011-06-22 清华大学 场发射阴极装置的制造方法
KR100880562B1 (ko) 2007-07-09 2009-01-30 (주)제이디에이테크놀로지 진공 채널 트랜지스터 및 전계 방출형 평판 표시 장치
WO2012177900A1 (fr) 2011-06-22 2012-12-27 Research Triangle Institute, International Dispositif microélectronique bipolaire
KR101774480B1 (ko) * 2011-08-16 2017-09-04 에레즈 할라미 전계 효과 트랜지스터의 비접촉 제어를 위한 방법 및 장치 그리고 두 개의 전자 장치들을 상호연결하는 방법
CN104143513B (zh) * 2013-05-09 2016-12-28 中芯国际集成电路制造(上海)有限公司 纳米真空场效应电子管及其形成方法
ITMI20130897A1 (it) 2013-05-31 2014-12-01 St Microelectronics Srl Dispositivo microelettronico a vuoto integrato e relativo metodo di fabbricazione.
CN204905205U (zh) 2014-03-31 2015-12-23 意法半导体股份有限公司 集成真空微电子结构
WO2016182080A1 (fr) * 2015-05-14 2016-11-17 国立大学法人山口大学 Transistor à canal à vide et procédé de fabrication correspondant
CN106571367A (zh) * 2015-10-12 2017-04-19 上海新昇半导体科技有限公司 真空管闪存结构及其制造方法
CA3017986C (fr) 2016-04-06 2023-08-01 Amcor Group Gmbh Preforme multicouche et contenant
CN108242466B (zh) * 2016-12-26 2020-09-01 中国科学院苏州纳米技术与纳米仿生研究所 场发射器件及其制作方法
WO2017190511A1 (fr) * 2016-05-04 2017-11-09 中国科学院苏州纳米技术与纳米仿生研究所 Dispositif à émission de champ et son procédé de fabrication
CN107346720B (zh) * 2016-05-04 2020-09-01 中国科学院苏州纳米技术与纳米仿生研究所 场发射器件及其制作方法
RU2703292C1 (ru) * 2019-03-26 2019-10-16 Акционерное общество "Научно-производственное предприятие "Алмаз" (АО "НПП "Алмаз") Способ изготовления катодно-сеточного узла с углеродными автоэмиттерами
CN110246889B (zh) * 2019-05-10 2021-05-28 西安交通大学 一种双栅型真空场发射三极管结构及其制作方法
CN110767519B (zh) * 2019-10-21 2022-03-04 中国电子科技集团公司第十二研究所 一种场发射电子源结构及其形成方法、电子源、微波管
JP6818931B1 (ja) 2020-09-10 2021-01-27 善文 安藤 真空チャネル電界効果トランジスタ、その製造方法及び半導体装置

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Publication number Priority date Publication date Assignee Title
FR2635913B1 (fr) * 1988-08-31 1990-11-09 Saint Louis Inst Diode a emission de champ
JPH0340332A (ja) * 1989-07-07 1991-02-21 Matsushita Electric Ind Co Ltd 電界放出型スウィチング素子およびその製造方法
JP2574500B2 (ja) * 1990-03-01 1997-01-22 松下電器産業株式会社 プレーナ型冷陰極の製造方法
DE4010909A1 (de) * 1990-04-04 1991-10-10 Siemens Ag Diode
US5289086A (en) * 1992-05-04 1994-02-22 Motorola, Inc. Electron device employing a diamond film electron source
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US5445550A (en) * 1993-12-22 1995-08-29 Xie; Chenggang Lateral field emitter device and method of manufacturing same
US5442193A (en) * 1994-02-22 1995-08-15 Motorola Microelectronic field emission device with breakdown inhibiting insulated gate electrode
US5629580A (en) * 1994-10-28 1997-05-13 International Business Machines Corporation Lateral field emission devices for display elements and methods of fabrication
US5644188A (en) * 1995-05-08 1997-07-01 Advanced Vision Technologies, Inc. Field emission display cell structure
AU5727496A (en) * 1995-05-08 1996-11-29 Advanced Vision Technologies, Inc. Field emission display cell structure and fabrication proces s
US5604399A (en) * 1995-06-06 1997-02-18 International Business Machines Corporation Optimal gate control design and fabrication method for lateral field emission devices
WO1996042113A1 (fr) * 1995-06-13 1996-12-27 Advanced Vision Technologies, Inc. Cathode stratifiee composite a emission de champ laterale et son procede de fabrication
AU6346496A (en) * 1995-07-05 1997-02-05 Advanced Vision Technologies, Inc. Direct electron injection field-emission display device and abrication process
AU6850496A (en) * 1995-09-06 1997-03-27 Advanced Vision Technologies, Inc. High-frequency field-emission device and fabrication process
WO1999040604A1 (fr) * 1998-02-09 1999-08-12 Advanced Vision Technologies, Inc. Dispositif a emission de champ d'electrons confines et son procede de fabrication
WO1999049492A1 (fr) * 1998-03-21 1999-09-30 Korea Advanced Institute Of Science & Technology Afficheur ligne a emission de champ
JP3488692B2 (ja) * 1998-03-25 2004-01-19 コリア アドバンスト インスティテュート オブ サイエンス アンド テクノロジー 真空電界トランジスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111613662A (zh) * 2020-05-27 2020-09-01 东北大学 偏压诱导共线反铁磁材料产生自旋极化电流及其调控方法

Also Published As

Publication number Publication date
JP2003505844A (ja) 2003-02-12
WO2001008193A1 (fr) 2001-02-01
CN1327610A (zh) 2001-12-19
EP1116256A1 (fr) 2001-07-18
KR20010075312A (ko) 2001-08-09

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