CN106571367A - 真空管闪存结构及其制造方法 - Google Patents
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Abstract
本发明提出了一种真空管闪存结构及其制造方法,在沟道中形成真空,并且采用氧化物‑氮化物‑氧化物组合结构作为栅介质层,其中,氮化物能够很好的束缚电荷,从而为栅极和真空之间提供绝缘阻挡作用。由于采用了氧化物‑氮化物‑氧化物组合结构作为栅介质层,能够使形成的器件具有更好的编程、擦除速度及贮存时间,同样还能够提高优越的栅极控制性能及极小的栅极漏电流。
Description
技术领域
本发明涉及半导体制造领域,尤其涉及一种真空管闪存结构及其制造方法。
背景技术
真空管(英文:Vacuum Tube)是一种电子元件,在电路中控制电子的流动。参与工作的电极被封装在一个真空的容器内(管壁大多为玻璃),因而得名。在二十世纪中期前,因半导体尚未普及,基本上当时所有的电子器材均使用真空管,形成了当时对真空管的需求。但在半导体技术的发展普及和平民化下,真空管因成本高、不耐用、体积大、效能低等原因,最后被半导体取代了。但是可以在音响、微波炉及人造卫星的高频发射机看见真空管的身影。部份战斗机为防止核爆造成的电磁脉冲损坏,机上的电子设备亦采用真空管,真空管结构如图1所示,其包括栅极1、集电极3、发射极2及发热电阻丝3,电子4由发射极2流向集电极3。
早期的电子器件中真空管用来放大、开关或调节电信号。然而,随着半导体技术的发展,几十年以来,固态器件已经取代了真空管,例如MOSFET、BJT及二极管。
然而,真空管依然在音响系统和高功率无线电基站使用。这是由于真空管比固态器件的鲁棒性更好,可以在高温及各种辐射环境中使用。真空原理上是优于固体载体的传输媒介。电子在真空的速度是理论上3×1010厘米/秒,但在半导体中的速度仅仅为5×107厘米/秒。
发明内容
本发明的目的在于提供一种真空管闪存结构及其制造方法,具有更好的编程、擦除速度及贮存时间,同样还能够提高优越的栅极控制性能及极小的栅极漏电流。
为了实现上述目的,本发明提出了一种真空管闪存结构,包括:衬底、介质层、栅介质层、栅极及源漏极,其中,所述介质层形成在所述衬底上,所述栅极及源漏极形成在所述介质层上,所述源漏极分别位于所述栅极的两侧,所述栅极中设有真空,暴露出两侧源漏极,所述栅介质层形成在所述真空中栅极的侧壁上,所述栅介质层为氧化物-氮化物-氧化物组合结构。
进一步的,在所述的真空管闪存结构中,所述源漏极朝向真空内具有凸起。
进一步的,在所述的真空管闪存结构中,还包括侧墙,所述侧墙位于所述栅极的两侧表面。
进一步的,在所述的真空管闪存结构中,所述介质层设有凹槽,所述栅极形成在所述凹槽内。
本发明还提出了一种真空管闪存结构的制造方法,用于制备如上文所述的真空管闪存结构,包括步骤:
提供衬底;
在所述衬底上依次形成介质层及牺牲层;
图案化处理所述介质层和牺牲层,形成H型沟道桥梁;
刻蚀去除位于所述H型沟道桥梁下的介质层,使所述H型沟道桥梁悬空;
在所述H型沟道桥梁及牺牲层表面形成栅介质层,所述栅介质层为氧化物-氮化物-氧化物组合结构;
在所述介质层上形成栅极,所述栅极包围所述H型沟道桥梁;
刻蚀去除所述牺牲层及H型沟道桥梁,在所述栅极中形成真空,所述真空暴露出所述栅介质层;
在所述栅极表面形成侧墙;
在所述栅极的两侧形成源漏极。
进一步的,在所述的一种真空管闪存结构的制造方法中,在形成所述H型沟道桥梁后,采用高温退火工艺对所述H型沟道桥梁进行处理,使其变为圆柱形。
进一步的,在所述的一种真空管闪存结构的制造方法中,所述高温退火工艺使用的气体为He、N2、Ar或者H2。
进一步的,在所述的一种真空管闪存结构的制造方法中,所述高温退火工艺的温度范围是600摄氏度~1000摄氏度。
进一步的,在所述的一种真空管闪存结构的制造方法中,所述栅极中的真空内的压力范围是0.1torr~50torr。
进一步的,在所述的一种真空管闪存结构的制造方法中,刻蚀去除所述牺牲层及H型沟道桥梁的步骤包括:
先刻蚀去除所述牺牲层,暴露出所述H型沟道桥梁的两侧壁;
采用选择性湿法刻蚀工艺去除位于所述栅极内的H型沟道桥梁。
进一步的,在所述的一种真空管闪存结构的制造方法中,采用干法刻蚀去除所述牺牲层。
进一步的,在所述的一种真空管闪存结构的制造方法中,在去除所述H型沟道桥梁后,使用O2、N2O或者NH3对所述栅极进行氧化或者氮化处理,或者使用原子沉积法在所述栅极形成Al2O3或者AlN。
进一步的,在所述的一种真空管闪存结构的制造方法中,所述源漏极材质为Zr、V、Nb、Ta、Cr、Mo、W、Fe、Co、Pd、Cu、Al、Ga、In、Ti、TiN、TaN、或者C。
进一步的,在所述的一种真空管闪存结构的制造方法中,所述牺牲层材质为Al、Ge、Si、Cr、Mo、W、Fe、Co、Cu、Ga、In或Ti。
进一步的,在所述的一种真空管闪存结构的制造方法中,所述氧化物-氮化物-氧化物为氧化硅-氮化硅-氧化硅组合。
与现有技术相比,本发明的有益效果主要体现在:在沟道中形成真空,并且采用氧化物-氮化物-氧化物组合结构作为栅介质层,其中,氮化物能够很好的束缚电荷,从而为栅极和真空之间提供绝缘阻挡作用。由于采用了氧化物-氮化物-氧化物组合结构作为栅介质层,能够使形成的器件具有更好的编程、擦除速度及贮存时间,同样还能够提高优越的栅极控制性能及极小的栅极漏电流。
附图说明
图1为现有技术中真空管的工作原理示意图;
图2为本发明一实施例中真空管闪存结构的立体结构示意图;
图3为本发明一实施例中为沿图2中A-A’向的剖面示意图;
图4为本发明一实施例中为沿图2中A-A’向的剖面示意图;
图5为本发明一实施例中真空管闪存结构的制造方法的流程图;
图6至图15为本发明一实施例中真空管闪存结构在制备过程中的剖面示意图。
具体实施方式
下面将结合示意图对本发明的真空管闪存结构及其制造方法进行更详细的描述,其中表示了本发明的优选实施例,应该理解本领域技术人员可以修改在此描述的本发明,而仍然实现本发明的有利效果。因此,下列描述应当被理解为对于本领域技术人员的广泛知道,而并不作为对本发明的限制。
为了清楚,不描述实际实施例的全部特征。在下列描述中,不详细描述公知的功能和结构,因为它们会使本发明由于不必要的细节而混乱。应当认为在任何实际实施例的开发中,必须做出大量实施细节以实现开发者的特定目标,例如按照有关系统或有关商业的限制,由一个实施例改变为另一个实施例。另外,应当认为这种开发工作可能是复杂和耗费时间的,但是对于本领域技术人员来说仅仅是常规工作。
在下列段落中参照附图以举例方式更具体地描述本发明。根据下面说明和权利要求书,本发明的优点和特征将更清楚。需说明的是,附图均采用非常简化的形式且均使用非精准的比例,仅用以方便、明晰地辅助说明本发明实施例的目的。
请参考图2至图4,在本实施例中,提出了一种空管闪存结构,包括:衬底10、介质层20、栅介质层、栅极50及源漏极70,其中,所述介质层20形成在所述衬底10上,所述栅极50及源漏极70形成在所述介质层20上,所述源漏极70分别位于所述栅极50的两侧,所述栅极50中设有真空,暴露出两侧源漏极70,所述栅介质层形成在所述真空中栅极50的侧壁上,所述栅介质层为氧化物-氮化物-氧化物组合结构。
其中,真空管闪存结构还包括侧墙,所述侧墙位于所述栅极的两侧表面。所述源漏极70朝向真空内具有凸起,具体的,所述源漏极70位于真空的一端形成有弧形的凸起结构。所述介质层20设有凹槽,所述栅极50形成在所述凹槽内。
请参考图5,在本实施例的另一方面,还提出了一种真空管闪存结构的制造方法,用于制备如上文所述的真空管闪存结构,包括步骤:
S100:提供衬底;
S200:在所述衬底上依次形成介质层及牺牲层;
S300:图案化处理所述介质层和牺牲层,形成H型沟道桥梁;
S400:刻蚀去除位于所述H型沟道桥梁下的介质层,使所述H型沟道桥梁悬空;
S500:在所述H型沟道桥梁及牺牲层表面形成栅介质层,所述栅介质层为氧化物-氮化物-氧化物组合结构;
S600:在所述介质层上形成栅极,所述栅极包围所述H型沟道桥梁;
S700:刻蚀去除所述牺牲层及H型沟道桥梁,在所述栅极中形成真空,所述真空暴露出所述栅介质层;
S800:在所述栅极表面形成侧墙;
S900:在所述栅极的两侧形成源漏极。
具体的,请参考图6,在衬底10上依次形成介质层20及牺牲层30,其中,所述衬底10可以为硅衬底或绝缘体上硅等常规衬底,介质层20通常为二氧化硅,牺牲层30的材质可以为Al、Ge、Si、Cr、Mo、W、Fe、Co、Cu、Ga、In或Ti等,在本实施例中,优选为Al。
请参考图7,图案化处理所述介质层20和牺牲层30,形成H型沟道桥梁31,也称为鳍型结构(Fin),具体刻蚀可以通过光阻作为掩膜等常规工艺进行刻蚀。
请参考图8,采用BOE或DHF进行刻蚀,去除位于所述H型沟道桥梁31下的介质层20,使所述H型沟道桥梁31悬空。
请参考图9,采用高温退火工艺对所述H型沟道桥梁31进行处理,使其变为圆柱形,避免存在棱角,造成后续器件工艺在棱角处可靠性差等问题,其中,所述高温退火工艺使用的气体为He、N2、Ar或者H2。所述高温退火工艺的温度范围是600摄氏度~1000摄氏度,例如是800摄氏度。
请参考图10,在所述H型沟道桥梁31及牺牲层30表面形成栅介质层,所述栅介质层为氧化物41-氮化物42-氧化物43组合结构,即为氧化硅-氮化硅-氧化硅组合结构(ONO),其可以采用CVD、PVD或ALD形成。
请参考图11,在所述介质层20上形成栅极50,所述栅极50包围所述H型沟道桥梁31;栅极50为金属栅极,可以采用CVD、MOCVD或PVD形成,栅极50的图案化可以采用光阻及干法刻蚀等常规工艺形成。
请参考图12,刻蚀去除牺牲层30及H型沟道桥梁31,具体的,先刻蚀去除位于牺牲层30表面的栅介质层,接着,刻蚀去除牺牲层30,并暴露出所述栅极50的两侧以及被栅极50包围的H型沟道桥梁31,刻蚀去除牺牲层30所采用的工艺为光阻及干法刻蚀等采用工艺,接着,请参考图13,再采用选择性湿法刻蚀工艺去除位于所述栅极50内的H型沟道桥梁31,从而形成真空。
请参考图14,在去除所述H型沟道桥梁31后,使用O2、N2O或者NH3对所述栅极50进行氧化或者氮化处理,或者使用原子沉积法(ALD)在所述栅极形成Al2O3或者AlN作为侧墙。
接着,在所述栅极50的两侧形成源漏极70,形成如图2所示的结构。其中,所述源漏极70材质为Zr、V、Nb、Ta、Cr、Mo、W、Fe、Co、Pd、Cu、Al、Ga、In、Ti、TiN、TaN、或者C等材质。所述源漏极70可以采用CVD或者PVD等工艺形成。由此,真空由源漏极70及栅极50进行密封,真空内的压强范围是0.1torr~50torr。
请参考图15,在形成源漏极70之后,再在H2或者N2氛围下进行高温退火工艺,反应温度范围是600摄氏度~1000摄氏度,采用高温退火工艺对源漏极70进行处理,能够使源漏极70朝向真空内具有凸起,形成弧形状,如图3所示,从而可以增加器件的性能。
综上,在本发明实施例提供的真空管闪存结构及其制造方法中,在沟道中形成真空,并且采用氧化物-氮化物-氧化物组合结构作为栅介质层,其中,氮化物能够很好的束缚电荷,从而为栅极和真空之间提供绝缘阻挡作用。由于采用了氧化物-氮化物-氧化物组合结构作为栅介质层,能够使形成的器件具有更好的编程、擦除速度及贮存时间,同样还能够提高优越的栅极控制性能及极小的栅极漏电流。
上述仅为本发明的优选实施例而已,并不对本发明起到任何限制作用。任何所属技术领域的技术人员,在不脱离本发明的技术方案的范围内,对本发明揭露的技术方案和技术内容做任何形式的等同替换或修改等变动,均属未脱离本发明的技术方案的内容,仍属于本发明的保护范围之内。
Claims (18)
1.一种真空管闪存结构,其特征在于,包括:衬底、介质层、栅介质层、栅极及源漏极,其中,所述介质层形成在所述衬底上,所述栅极及源漏极形成在所述介质层上,所述源漏极分别位于所述栅极的两侧,所述栅极中设有真空,暴露出两侧源漏极,所述栅介质层形成在所述真空中栅极的侧壁上,所述栅介质层为氧化物-氮化物-氧化物组合结构。
2.如权利要求1所述的真空管闪存结构,其特征在于,所述源漏极朝向真空内具有凸起。
3.如权利要求1所述的真空管闪存结构,其特征在于,还包括侧墙,所述侧墙位于所述栅极的两侧表面。
4.如权利要求1所述的真空管闪存结构,其特征在于,所述介质层设有凹槽,所述栅极形成在所述凹槽内。
5.一种真空管闪存结构的制造方法,用于制备如权利要求1至4中任一项所述的真空管闪存结构,其特征在于,包括步骤:
提供衬底;
在所述衬底上依次形成介质层及牺牲层;
图案化处理所述介质层和牺牲层,形成H型沟道桥梁;
刻蚀去除位于所述H型沟道桥梁下的介质层,使所述H型沟道桥梁悬空;
在所述H型沟道桥梁及牺牲层表面形成栅介质层,所述栅介质层为氧化物-氮化物-氧化物组合结构;
在所述介质层上形成栅极,所述栅极包围所述H型沟道桥梁;
刻蚀去除所述牺牲层及H型沟道桥梁,在所述栅极中形成真空,所述真空暴露出所述栅介质层;
在所述栅极表面形成侧墙;
在所述栅极的两侧形成源漏极。
6.如权利要求5所述的一种真空管闪存结构的制造方法,其特征在于,在形成所述H型沟道桥梁后,采用高温退火工艺对所述H型沟道桥梁进行处理,使其变为圆柱形。
7.如权利要求6所述的一种真空管闪存结构的制造方法,其特征在于,所述高温退火工艺使用的气体为He、N2、Ar或者H2。
8.如权利要求6所述的一种真空管闪存结构的制造方法,其特征在于,所述高温退火工艺的温度范围是600摄氏度~1000摄氏度。
9.如权利要求5所述的一种真空管闪存结构的制造方法,其特征在于,所述栅极中的真空内的压强范围是0.1torr~50torr。
10.如权利要求5所述的一种真空管闪存结构的制造方法,其特征在于,刻蚀去除所述牺牲层及H型沟道桥梁的步骤包括:
刻蚀去除位于所述牺牲层表面的栅介质层,暴露出所述牺牲层;
刻蚀去除暴露的牺牲层,暴露出所述H型沟道桥梁的两侧壁;
采用选择性湿法刻蚀工艺去除位于所述栅极内的H型沟道桥梁。
11.如权利要求10所述的一种真空管闪存结构的制造方法,其特征在于,采用干法刻蚀去除所述牺牲层。
12.如权利要求5所述的一种真空管闪存结构的制造方法,其特征在于,在去除所述H型沟道桥梁后,使用O2、N2O或者NH3对所述栅极进行氧化或者氮化处理,或者使用原子沉积法在所述栅极形成Al2O3或者AlN。
13.如权利要求5所述的一种真空管闪存结构的制造方法,其特征在于,所述源漏极材质为Zr、V、Nb、Ta、Cr、Mo、W、Fe、Co、Pd、Cu、Al、Ga、In、Ti、TiN、TaN、或者C。
14.如权利要求5所述的一种真空管闪存结构的制造方法,其特征在于,采用高温退火工艺对源漏极进行处理。
15.如权利要求14所述的一种真空管闪存结构的制造方法,其特征在于,所述高温退火工艺使用的气体为H2或N2。
16.如权利要求15所述的一种真空管闪存结构的制造方法,其特征在于,所述高温退火工艺的温度范围是600摄氏度~1000摄氏度。
17.如权利要求5所述的一种真空管闪存结构的制造方法,其特征在于,所述牺牲层材质为Al、Ge、Si、Cr、Mo、W、Fe、Co、Cu、Ga、In或Ti。
18.如权利要求5所述的一种真空管闪存结构的制造方法,其特征在于,所述氧化物-氮化物-氧化物为氧化硅-氮化硅-氧化硅组合。
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CN104143513A (zh) * | 2013-05-09 | 2014-11-12 | 中芯国际集成电路制造(上海)有限公司 | 纳米真空场效应电子管及其形成方法 |
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Also Published As
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US20170104079A1 (en) | 2017-04-13 |
TWI556413B (zh) | 2016-11-01 |
TW201714285A (zh) | 2017-04-16 |
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