CN107170681B - 真空管闪存结构之制造方法 - Google Patents

真空管闪存结构之制造方法 Download PDF

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CN107170681B
CN107170681B CN201610120869.9A CN201610120869A CN107170681B CN 107170681 B CN107170681 B CN 107170681B CN 201610120869 A CN201610120869 A CN 201610120869A CN 107170681 B CN107170681 B CN 107170681B
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vacuum tube
flash memory
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dielectric layer
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CN107170681A (zh
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肖德元
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Zing Semiconductor Corp
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Abstract

本发明提出了一种真空管闪存结构及其制造方法，在沟道中形成真空，并且采用氧化物‑氮化物‑氧化物组合结构作为栅介电层，其中，氮化物能够很好的束缚电荷，从而为栅极和真空之间提供绝缘阻挡作用。由于采用了氧化物‑氮化物‑氧化物组合结构作为栅介质层，能够使形成的器件具有更好的程序设计、擦除速度及储存时间，同样还能够提高优越的栅极控制能力及极小的栅极漏电流。

Description

真空管闪存结构之制造方法
技术领域
本发明涉及半导体制造领域，尤其涉及一种真空管闪存结构及其制造方法。
背景技术
真空管(Vacuum Tube)是一种电子器件，在电路中控制电子的流动。参与工作的电极被封装在一个真空的容器内(管壁大多为玻璃)，因而得名。在二十世纪中期前，因半导体尚未普及，基本上当时所有的电子器材均使用真空管，形成了当时对真空管的需求。但在半导体技术的发展普及和平民化下，真空管因成本高、不耐用、体积大、效能低等原因，最后被半导体取代了。但是可以在音响、微波炉及人造卫星的高频发射机看见真空管的身影。部份战斗机为防止核爆造成的电磁脉冲损坏，机上的电子设备亦采用真空管，真空管结构如图1所示，其包括栅极1、集极3、射极2及发热电阻丝5，电子4由射极2流向集极3。
早期的电子器件中真空管用来放大、开关或调节电信号。然而，随着半导体技术的发展，几十年以来，固态器件已经取代了真空管，例如金氧半场效晶体管(MOSFET)、双极接面晶体管(BJT)及二极管。
然而，真空管依然在音响系统和高功率无线电基站使用。这是由于真空管比固态器件的环境耐性更好，可以在高温及各种辐射环境中使用。真空原理上是优于固体载体的传输媒介。电子在真空的速度是理论上3×1010厘米/秒，但在半导体中的速度仅仅为5×107厘米/秒。因此真空管在某些需求中的表现远比固态器件优越。
发明内容
本发明的目的在于提供一种真空管闪存结构的制造方法，其是利用业界通用的半导体标准制程所制造，且具有更好的程序设计、擦除速度及储存时间，同样还能够提高优越的栅极控制性能及极小的栅极漏电流。
为达成上述目的，本发明的真空管闪存结构的制造方法包括提供一衬底；在所述衬底上依次形成介电层、源极层、第二介电层、栅极层和硬掩膜层；图案化处理所述第二介电层、栅极层和硬掩膜层形成栅极结构；修剪栅极结构中的第二介电层和栅极层，使剩余第二介电层和栅极层的宽度小于硬掩膜层；沉积栅介电层于整个衬底上并进行栅介电层侧壁子蚀刻；沉积漏极层；以及沉积层间介电层于整个衬底上并进行平坦化以在所述栅极中形成真空。
进一步的，本发明的真空管闪存结构的制造方法更包含在层间介电层进行平坦化后，采用高温退火对所述源极层和漏极层进行处理，使其变为圆柱形。
进一步的，其中所述高温退火使用的气体为He、N2、Ar或者H2。
进一步的，其中所述高温退火的温度范围是在600～1000℃之间。
进一步的，其中所述栅极中的真空内的气压范围是0.1torr～50torr。
进一步的，其中所述源极层和漏极层材质为Zr、V、Nb、Ta、Cr、Mo、W、Fe、Co、Pd、Cu、Al、Ga、In、Ti、TiN、TaN、C、及其组合。
进一步的，其中所述栅极层材质为Al、多晶硅(poly Si)、Cu、Ga、In、Ti、Ta、W、Co、Ti、Ta、TiN、TaN、及其组合。
进一步的，其中所述栅介电层材质为氧化硅、氧化氮化硅(oxynitride)、氮化硅、Al2O3、AlN、HfO。
进一步的，其中所述硬掩膜层的材质为氧化氮化硅(oxynitride)、氮化硅、氮化钛(TiN)。
附图说明
图1为现有技术中真空管的工作原理示意图；
图2为本发明一实施例中真空管闪存结构的立体结构示意图；
图3为本发明一实施例中的剖面示意图；
图4为本发明一实施例中的另一方向的剖面示意图；
图5为本发明一实施例中真空管闪存结构的制造方法的流程图；
图6至14为本发明一实施例中真空管闪存结构在制造过程中的剖面示意图。
具体实施方式
以下将结合示意图对本发明的真空管闪存结构及其制造方法进行更详细的描述，其中表示了本发明的较佳实施例，应该理解本领域技术人员可以修改在此描述的本发明，而仍然实现本发明的有利效果。因此，下列描述应当被理解为对于本领域技术人员的广泛知道，而并非作为对于本发明的限制。
为了清楚说明起见，本说明书并不描述实际实施例的全部特征。在下列描述中，不详细描述众所皆知的功能和结构，因为它们会使本发明由于不必要的细节而混乱。应当认为在任何实际实施例的开发中，必须做出大量实施细节以实现开发者的特定目标，例如按照有关系统或有关商业的限制，由一个实施例改变为另一个实施例。另外，应当认为这种开发工作可能是复杂和耗费时间的，但是对于本领域技术人员来说仅仅是简易的置换。
在下列段落中参照附图以举例方式更具体地描述本发明。根据下面说明和权利要求书，本发明的优点和特征将更清楚。需说明的是，附图均采用非常简化的形式且均使用非精准的比例，仅用以方便、明晰地辅助说明本发明实施例的目的。
请参考图2至图4，在本实施例中，提出了一种空管闪存结构，包括：衬底10、介电层20、源极层30、栅介电层40、栅极50、漏极70、硬掩膜层80和层间介电层(ILD)90，其中，所述介电层20形成在所述衬底10上，所述源极层30、栅介电层40、栅极50及漏极70形成在所述介电层20上，所述源极层30和漏极70分别位于所述栅极50的两侧，所述栅极50中设有真空通道60，暴露出两侧源极层30和漏极70，所述栅介电层40形成在所述真空中栅极50的侧壁上。
请参考图5，在本实施例的另一方面，还提出了一种真空管内存结构的制造方法，用于制备如上文所述的真空管闪存结构，包括步骤：
S100：提供衬底；
S200：在所述衬底上形成介电层；
S300：在所述介电上形成源极层；
S400：在所述源极层上形成第二介电层；
S500：在所述第二介电层上依序形成栅极层和硬掩膜层；
S600：图案化处理所述第二介电层、栅极层和硬掩膜层形成栅极图案；
S700：修剪栅极图案中的第二介电层、栅极层，使剩余的栅极层宽度小于硬掩膜层；
S800：沉积栅介电层于整个衬底上并进行栅介电质层侧壁子蚀刻；
S900：沉积漏极层；
S1000：沉积层间介电层于整个衬底上并进行平坦化制程；
S1100：进行高温退火以将所述源极层和漏极层形成圆柱状的源漏电极。
具体的，请参考图6，在衬底10上形成介电层20，其中，所述衬底10可以为硅衬底或绝缘体上硅(SOI)等一般衬底，介电层20通常为二氧化硅。
请参考图7，依序在所述介电层20上沉积形成源极层30、第二介电层35、栅极层50和硬掩膜层80。其中，所述源极层30的材质为Zr、V、Nb、Ta、Cr、Mo、W、Fe、Co、Pd、Cu、Al、Ga、In、Ti、TiN、TaN、或者C等材质。所述源极层30可以采用CVD或者PVD等制程形成。第二介电层35通常也为二氧化硅。栅极层50为金属栅极，可以采用CVD、MOCVD或PVD形成。在一实施例中，金属栅极的材质为Al、poly Si、Cu、Ga、In、Ti、Ta、W、Co、Ti、Ta、TiN、TaN等材质。所述硬掩膜层80的材质为氧化氮化硅(oxynitride)、氮化硅、氮化钛(TiN)等材质，可以采用CVD、MOCVD或ALD等制程形成。
请参考图8，图案化处理所述第二介电层35、栅极层50和硬掩膜层80，形成栅极结构31，具体的形成方式可以通过传统的微影和蚀刻制程进行。
请参考图9，使用选择性蚀刻修剪栅极结构31中的栅极层50和第二介电层35，使剩余的栅极层50a和第二介电层35a宽度小于硬掩膜层80。所述选择性蚀刻可以采用含氯(如BCl3，Cl2)电浆修剪栅极层50，采用BOE或DHF湿式蚀刻法修剪栅极结构31中的第二介电层35。
请参考图10，顺形沉积栅介电层40于整个衬底10上。所述栅介电层40的材质为氧化硅、氧化氮化硅(oxynitride)、氮化硅、Al2O3、AlN、HfO等材质，可以采用CVD、MOCVD或ALD等制程形成。
请参考图11，接着将衬底10上方表面裸露出来的栅介电层40蚀刻去掉以形成栅极侧壁。
请参考图12，沉积漏极层70于衬底10表面。所述漏极层70的材质为Zr、V、Nb、Ta、Cr、Mo、W、Fe、Co、Pd、Cu、Al、Ga、In、Ti、TiN、TaN、或者C等材质。所述漏极层70可以采用CVD、PVD或是溅镀等制程形成。因此，真空的栅极通道60由源极30、漏极70和栅极结构50进行密封而形成，真空内的气压范围是0.1torr～50torr。
请参考图13，沉积层间介电层90于衬底10表面。其中，所述层间介电层90通常也为二氧化硅，可以采用CVD、PECVD、HDP CVD等制程形成。
请参考图14，对沉积层间介电层90进行平坦化后再采用高温退火制程对所述源极30和漏极70进行处理，使其变为圆柱形，避免存在棱角，造成后续器件制程会在棱角处发生可靠性较差等问题，其中，所述平坦化可以使用化学机械研磨或是回蚀刻等制程，所述高温退火制程使用的气体为He、N2、Ar或者H2。所述高温退火制程的温度范围是600摄氏度～1000摄氏度，例如是800摄氏度。
综上，在本发明实施例提供的真空管闪存结构及其制造方法中，在沟道中形成真空，并且采用氧化物-氮化物-氧化物组合结构作为栅介电层，其中，氮化物能够很好的束缚电荷，从而为栅极和真空之间提供绝缘阻挡作用。由于采用了氧化物-氮化物-氧化物复合结构作为栅介质层，能够使形成的器件具有更好的程序设计、抹除速度及储存时间，同时还能够提高优越的栅极控制性能及极小的栅极漏电流。
上述仅为本发明的较佳实施例而已，并非用来限制本发明。任何所属技术领域的人士，在不脱离本发明的技术方案的范围内，对本发明揭露的技术方案和技术内容做任何形式的均等替换或修改等变动，均属于不脱离本发明的技术方案的内容，仍属于本发明的保护范围之内。
显然，本领域的技术人员可以对本发明进行各种修改和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明申请专利范围及其等同技术的范围之内，则本发明也意图包含这些修改和变型在内。

Claims (14)

1.一种真空管闪存结构的制造方法，其特征在于，包括步骤：
提供一衬底；
在所述衬底上依次形成介电层、源极层、第二介电层、栅极层和硬掩膜层；
图案化处理所述第二介电层、栅极层和硬掩膜层形成栅极结构；
修剪栅极结构中的第二介电层和栅极层，使剩余第二介电层和栅极层的宽度小于硬掩膜层；
沉积栅介电层于整个衬底上并进行栅介电层侧壁子蚀刻；
沉积漏极层；
沉积层间介电层于整个衬底上并进行平坦化以在所述栅极中形成真空。
2.如权利要求1所述的真空管闪存结构的制造方法，其特征在于，更包含在层间介电层进行平坦化后，采用高温退火对所述源极层和漏极层进行处理，使其变为圆柱形。
3.如权利要求2所述的真空管闪存结构的制造方法，其特征在于，所述高温退火使用的气体为He、N2、Ar或者H2。
4.如权利要求2所述的真空管闪存结构的制造方法，其特征在于，所述高温退火的温度范围是在600～1000℃之间。
5.如权利要求2所述的真空管闪存结构的制造方法，其特征在于，所述栅极中的真空内的气压范围是0.1torr～50torr。
6.如权利要求1所述的真空管闪存结构的制造方法，其特征在于，所述源极层和漏极层材质为Zr、V、Nb、Ta、Cr、Mo、W、Fe、Co、Pd、Cu、Al、Ga、In、Ti、TiN、TaN、及其组合。
7.如权利要求1所述的真空管闪存结构的制造方法，其特征在于，所述栅极层材质为Al、多晶硅、Cu、Ga、In,、Ti、Ta、W、Co、Ti、Ta、TiN、TaN、及其组合。
8.如权利要求1所述的真空管闪存结构的制造方法，其特征在于，所述栅介电层材质为氧化硅、氧化氮化硅、氮化硅、Al2O3、AlN、HfO。
9.如权利要求1所述的真空管闪存结构的制造方法，其特征在于，所述硬掩膜层的材质为氧化氮化硅、氮化硅、氮化钛。
10.一种真空管闪存结构，包括：
一衬底；
一介电层及一源极层于所述衬底之上；
一栅极结构于所述源极层之上，所述栅极结构包括栅极层和硬掩膜层，一栅介电层于所述栅极结构的侧壁以及一中空的真空通道，其中所述栅极结构中的所述栅极层的宽度小于所述硬掩膜层的宽度；以及
一漏极层于所述栅极结构之上并封闭所述真空通道。
11.如权利要求10所述的真空管闪存结构，其特征在于，所述源极层和漏极层材质为Zr、V、Nb、Ta、Cr、Mo、W、Fe、Co、Pd、Cu、Al、Ga、In、Ti、TiN、TaN、及其组合。
12.如权利要求10所述的真空管闪存结构，其特征在于，所述栅极层材质为Al、多晶硅、Cu、Ga、In、Ti、Ta、W、Co、Ti、Ta、TiN、TaN、及其组合。
13.如权利要求10所述的真空管闪存结构，其特征在于，所述栅介电层材质为氧化硅、氧化氮化硅、氮化硅、Al2O3、AlN、HfO。
14.如权利要求10所述的真空管闪存结构，其特征在于，所述硬掩膜层的材质为氧化氮化硅、氮化硅、氮化钛。
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