CA2275640C - Methode et appareil pour l'obtention d'un monocristal - Google Patents
Methode et appareil pour l'obtention d'un monocristal Download PDFInfo
- Publication number
- CA2275640C CA2275640C CA002275640A CA2275640A CA2275640C CA 2275640 C CA2275640 C CA 2275640C CA 002275640 A CA002275640 A CA 002275640A CA 2275640 A CA2275640 A CA 2275640A CA 2275640 C CA2275640 C CA 2275640C
- Authority
- CA
- Canada
- Prior art keywords
- monocrystal
- raw material
- molten mass
- drop tube
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/08—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions in conditions of zero-gravity or low gravity
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/08—Germanium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/903—Dendrite or web or cage technique
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1016—Apparatus with means for treating single-crystal [e.g., heat treating]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Ce procédé consiste faire subir une surfusion à un matériau brut fondu, et à le laisser flotter à une gravité très faible, afin d'abaisser l'énergie libre d'une partie de la surface de ce matériau fondu, et donc de faire pousser un monocristal. Ce dispositif (31) de fabrication d'un monocristal possède un four du type à couche dorée (35), une chambre (33), un mécanisme (38) d'alimentation en matériau brut et de rétention, des tubes de descente (36, 37), une plaque tournante (39) et un bain de récupération (40). On fait fondre un matériau brut semi-conducteur (32a) puis on le fait chuter librement dans un vide, dans les tubes de descente (36, 37). Lors de la chute de la matière en fusion, une partie de la surface de chaque gouttelette (32b) sphérique, fondue et ayant subi une surfusion, est mise en contact avec la surface solide de la plaque tournante (39), afin de former un noyau cristallin, à partir duquel on fait pousser un monocristal pour obtenir un monocristal sphérique (32c), que l'on fait ensuite pénétrer dans le bain de récupération (40).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP1997/003844 WO1999022048A1 (fr) | 1997-10-23 | 1997-10-23 | Procede et dispositif de fabrication d'un monocristal |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2275640A1 CA2275640A1 (fr) | 1999-05-06 |
CA2275640C true CA2275640C (fr) | 2004-01-27 |
Family
ID=14181360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002275640A Expired - Fee Related CA2275640C (fr) | 1997-10-23 | 1997-10-23 | Methode et appareil pour l'obtention d'un monocristal |
Country Status (7)
Country | Link |
---|---|
US (1) | US6153007A (fr) |
EP (1) | EP0947613B1 (fr) |
JP (1) | JP3287579B2 (fr) |
AU (1) | AU727487B2 (fr) |
CA (1) | CA2275640C (fr) |
DE (1) | DE69723865T2 (fr) |
WO (1) | WO1999022048A1 (fr) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6264742B1 (en) | 1998-07-10 | 2001-07-24 | Ball Semiconductor Inc. | Single crystal processing by in-situ seed injection |
JP2000169279A (ja) * | 1998-12-10 | 2000-06-20 | Komatsu Electronic Metals Co Ltd | 球状半導体結晶製造方法及び製造装置 |
JP3087964B1 (ja) * | 1999-09-28 | 2000-09-18 | 工業技術院長 | 自由落下液滴の衝突凝固による高品質結晶材料の製造方法 |
JP3579316B2 (ja) * | 1999-10-19 | 2004-10-20 | 三洋電機株式会社 | 半導体装置の製造方法 |
US6355873B1 (en) | 2000-06-21 | 2002-03-12 | Ball Semiconductor, Inc. | Spherical shaped solar cell fabrication and panel assembly |
JP2002005745A (ja) * | 2000-06-26 | 2002-01-09 | Nec Corp | 温度測定装置、および温度測定方法 |
US7052659B1 (en) * | 2000-07-18 | 2006-05-30 | General Electric Company | Sequential high throughput screening method and system |
US6383287B1 (en) | 2000-09-28 | 2002-05-07 | Ball Semiconductor, Inc. | System and method for performing diffusion on a three-dimensional substrate |
US6706959B2 (en) * | 2000-11-24 | 2004-03-16 | Clean Venture 21 Corporation | Photovoltaic apparatus and mass-producing apparatus for mass-producing spherical semiconductor particles |
US6790561B2 (en) * | 2001-03-15 | 2004-09-14 | Wilson Greatbatch Ltd. | Process for fabricating continuously coated electrodes on a porous current collector and cell designs incorporating said electrodes |
US7001543B2 (en) * | 2001-10-23 | 2006-02-21 | Kyocera Corporation | Apparatus and method for manufacturing semiconductor grains |
US7189278B2 (en) * | 2002-04-18 | 2007-03-13 | Clean Venture 21 Corporation | Method and apparatus for producing semiconductor or metal particles |
US7198672B2 (en) | 2002-05-13 | 2007-04-03 | Josuke Nakata | Drop tube type granular crystal producing device |
JP4013226B2 (ja) * | 2004-01-29 | 2007-11-28 | 独立行政法人 宇宙航空研究開発機構 | 無容器凝固法によるバリウムチタン酸化物単結晶材料片の製造方法 |
ES2616177T3 (es) | 2004-03-12 | 2017-06-09 | Sphelar Power Corporation | Célula solar multicapa |
WO2005100893A1 (fr) * | 2004-03-31 | 2005-10-27 | Air Trick Inc. | Four à suspension électrostatique de type égouttage |
JP4789086B2 (ja) * | 2005-03-08 | 2011-10-05 | 独立行政法人 宇宙航空研究開発機構 | 無容器凝固法によるバリウチタン系酸化物ガラスの製造方法 |
US7323047B2 (en) | 2005-03-25 | 2008-01-29 | Kyocera Corporation | Method for manufacturing granular silicon crystal |
WO2006123403A1 (fr) * | 2005-05-17 | 2006-11-23 | Kyosemi Corporation | Appareil de production de cristal granulaire |
US20080029020A1 (en) * | 2006-07-28 | 2008-02-07 | Kyocera Corporation | Method and apparatus for producing granular crystal |
JP5163101B2 (ja) * | 2007-12-25 | 2013-03-13 | 信越半導体株式会社 | 単結晶製造装置および製造方法 |
US8535440B1 (en) * | 2010-04-12 | 2013-09-17 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method of promoting single crystal growth during melt growth of semiconductors |
JP6424301B2 (ja) * | 2014-02-24 | 2018-11-14 | 竹田 眞司 | 効率のいい太陽光発電装置の製造方法 |
US9725821B1 (en) | 2014-02-28 | 2017-08-08 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Cavity pull rod: device to promote single crystal growth from the melt |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4021323A (en) * | 1975-07-28 | 1977-05-03 | Texas Instruments Incorporated | Solar energy conversion |
US4389904A (en) * | 1981-03-23 | 1983-06-28 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method and apparatus for supercooling and solidifying substances |
JPS6212690A (ja) * | 1985-07-09 | 1987-01-21 | Matsushita Electric Ind Co Ltd | 結晶成長方法 |
DE3627810A1 (de) * | 1986-08-16 | 1988-02-18 | Battelle Institut E V | Verfahren und vorrichtung zur herstellung von einkristallen |
US4738831A (en) * | 1986-10-31 | 1988-04-19 | The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration | Method and apparatus for growing crystals |
JP2776859B2 (ja) * | 1989-01-11 | 1998-07-16 | 株式会社日立製作所 | 薄膜形成方法 |
JPH0369587A (ja) * | 1989-08-10 | 1991-03-25 | Hitachi Cable Ltd | 液相エピタキシャル成長装置 |
JP2655825B2 (ja) * | 1995-03-15 | 1997-09-24 | 科学技術庁金属材料技術研究所長 | 溶融試料の切り放し方法とその装置 |
-
1997
- 1997-10-23 US US09/331,502 patent/US6153007A/en not_active Expired - Fee Related
- 1997-10-23 JP JP51076799A patent/JP3287579B2/ja not_active Expired - Fee Related
- 1997-10-23 EP EP97909607A patent/EP0947613B1/fr not_active Expired - Lifetime
- 1997-10-23 DE DE69723865T patent/DE69723865T2/de not_active Expired - Fee Related
- 1997-10-23 WO PCT/JP1997/003844 patent/WO1999022048A1/fr active IP Right Grant
- 1997-10-23 CA CA002275640A patent/CA2275640C/fr not_active Expired - Fee Related
- 1997-10-23 AU AU47233/97A patent/AU727487B2/en not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
WO1999022048A1 (fr) | 1999-05-06 |
DE69723865D1 (de) | 2003-09-04 |
EP0947613A4 (fr) | 2000-01-12 |
US6153007A (en) | 2000-11-28 |
AU4723397A (en) | 1999-05-17 |
EP0947613B1 (fr) | 2003-07-30 |
AU727487B2 (en) | 2000-12-14 |
EP0947613A1 (fr) | 1999-10-06 |
DE69723865T2 (de) | 2004-04-22 |
JP3287579B2 (ja) | 2002-06-04 |
CA2275640A1 (fr) | 1999-05-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |