CA2256763A1 - Conductors for integrated circuits - Google Patents
Conductors for integrated circuits Download PDFInfo
- Publication number
- CA2256763A1 CA2256763A1 CA002256763A CA2256763A CA2256763A1 CA 2256763 A1 CA2256763 A1 CA 2256763A1 CA 002256763 A CA002256763 A CA 002256763A CA 2256763 A CA2256763 A CA 2256763A CA 2256763 A1 CA2256763 A1 CA 2256763A1
- Authority
- CA
- Canada
- Prior art keywords
- substrate
- conductor
- inductor
- trenches
- plates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000004020 conductor Substances 0.000 title claims description 51
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 239000002184 metal Substances 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 23
- 230000001965 increasing effect Effects 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 239000003989 dielectric material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000003071 parasitic effect Effects 0.000 abstract description 8
- 150000002739 metals Chemical class 0.000 abstract 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 6
- 238000002955 isolation Methods 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 238000011960 computer-aided design Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- MBYLVOKEDDQJDY-UHFFFAOYSA-N tris(2-aminoethyl)amine Chemical compound NCCN(CCN)CCN MBYLVOKEDDQJDY-UHFFFAOYSA-N 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Coils Or Transformers For Communication (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9602191-0 | 1996-05-31 | ||
| SE9602191A SE510443C2 (sv) | 1996-05-31 | 1996-05-31 | Induktorer för integrerade kretsar |
| PCT/SE1997/000954 WO1997045873A1 (en) | 1996-05-31 | 1997-05-30 | Conductors for integrated circuits |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2256763A1 true CA2256763A1 (en) | 1997-12-04 |
Family
ID=20402861
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002256763A Abandoned CA2256763A1 (en) | 1996-05-31 | 1997-05-30 | Conductors for integrated circuits |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP0902974A1 (zh) |
| JP (1) | JP2000511350A (zh) |
| KR (1) | KR100298480B1 (zh) |
| CN (1) | CN1220778A (zh) |
| AU (1) | AU3113097A (zh) |
| CA (1) | CA2256763A1 (zh) |
| SE (1) | SE510443C2 (zh) |
| WO (1) | WO1997045873A1 (zh) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1021828B1 (en) | 1997-07-11 | 2010-01-06 | Infineon Technologies AG | A process for manufacturing ic-components to be used at radio frequencies |
| KR19990055422A (ko) * | 1997-12-27 | 1999-07-15 | 정선종 | 실리콘 기판에서의 인덕터 장치 및 그 제조 방법 |
| JP3942264B2 (ja) * | 1998-03-11 | 2007-07-11 | 富士通株式会社 | 半導体基板上に形成されるインダクタンス素子 |
| DE19810825A1 (de) * | 1998-03-12 | 1999-09-16 | Siemens Ag | Integrierte elektronische Schaltungsanordnung und Verfahren zu ihrer Herstellung |
| EP0966040A1 (en) * | 1998-06-19 | 1999-12-22 | International Business Machines Corporation | Passive component above isolation trenches |
| KR20000011585A (ko) * | 1998-07-28 | 2000-02-25 | 윤덕용 | 반도체소자및그제조방법 |
| US6278186B1 (en) * | 1998-08-26 | 2001-08-21 | Intersil Corporation | Parasitic current barriers |
| DE19910983A1 (de) * | 1999-03-12 | 2000-09-21 | Bosch Gmbh Robert | Vorrichtung und Verfahren zur Bestimmung der lateralen Unterätzung einer strukturierten Oberflächenschicht |
| WO2001004953A1 (en) * | 1999-07-08 | 2001-01-18 | Korea Advanced Institute Of Science And Technology | Method for manufacturing a semiconductor device having a metal layer floating over a substrate |
| DE19944306B4 (de) * | 1999-09-15 | 2005-05-19 | Infineon Technologies Ag | Integrierte Halbleiterschaltung mit integrierter Spule und Verfahren zu deren Herstellung |
| SG98398A1 (en) * | 2000-05-25 | 2003-09-19 | Inst Of Microelectronics | Integrated circuit inductor |
| FR2810451A1 (fr) * | 2000-06-20 | 2001-12-21 | Koninkl Philips Electronics Nv | Circuit integre incluant un element inductif de facteur de qualite eleve et presentant une grande compacite |
| KR20020014225A (ko) * | 2000-08-17 | 2002-02-25 | 박종섭 | 미세 인덕터와 중첩되는 트렌치 내에 절연막을 구비하는집적 소자 및 그 제조 방법 |
| DE10041084A1 (de) * | 2000-08-22 | 2002-03-14 | Infineon Technologies Ag | Verfahren zur Bildung eines dielektrischen Gebiets in einem Halbleitersubstrat |
| DE10041691A1 (de) * | 2000-08-24 | 2002-03-14 | Infineon Technologies Ag | Halbleiteranordnung |
| EP1213762A1 (fr) * | 2000-12-05 | 2002-06-12 | Koninklijke Philips Electronics N.V. | Dispositif d'isolation d'un élement électrique |
| WO2003054955A2 (de) | 2001-12-13 | 2003-07-03 | Austriamicrosystems Ag | Siliziumsubstrat mit einer isolierschicht mit teilgebieten und entsprechende anordnung |
| DE10163460B4 (de) * | 2001-12-21 | 2010-05-27 | Austriamicrosystems Ag | Siliziumsubstrat mit einer Isolierschicht und Anordnung mit einem Siliziumsubstrat mit einer Isolierschicht |
| DE102004022139B4 (de) * | 2004-05-05 | 2007-10-18 | Atmel Germany Gmbh | Verfahren zur Herstellung einer Spiralinduktivität auf einem Substrat und nach einem derartigen Verfahren hergestelltes Bauelement |
| JP3927565B2 (ja) * | 2004-06-25 | 2007-06-13 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 磁気コアを有するオンチップ・インダクタ |
| CN101149761B (zh) * | 2006-09-20 | 2012-02-08 | 爱斯泰克（上海）高频通讯技术有限公司 | 硅基螺旋电感器件等效电路双π非对称模型参数的提取方法 |
| CN102208405B (zh) * | 2010-08-24 | 2015-11-25 | 华东师范大学 | 平面螺旋电感 |
| CN102456612A (zh) * | 2010-10-27 | 2012-05-16 | 上海华虹Nec电子有限公司 | 半导体集成电感的制作方法及结构 |
| JP5699905B2 (ja) * | 2011-10-28 | 2015-04-15 | 株式会社デンソー | 半導体装置 |
| CN114823638A (zh) * | 2022-04-27 | 2022-07-29 | 电子科技大学 | 一种低寄生电容集成电感结构 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0377360A (ja) * | 1989-08-18 | 1991-04-02 | Mitsubishi Electric Corp | 半導体装置 |
| US5336921A (en) * | 1992-01-27 | 1994-08-09 | Motorola, Inc. | Vertical trench inductor |
| WO1994017558A1 (en) * | 1993-01-29 | 1994-08-04 | The Regents Of The University Of California | Monolithic passive component |
| WO1996002070A2 (en) * | 1994-07-12 | 1996-01-25 | National Semiconductor Corporation | Integrated circuit comprising a trench isolation structure and an oxygen barrier layer and method for forming the integrated circuit |
| US5446311A (en) * | 1994-09-16 | 1995-08-29 | International Business Machines Corporation | High-Q inductors in silicon technology without expensive metalization |
-
1996
- 1996-05-31 SE SE9602191A patent/SE510443C2/sv not_active IP Right Cessation
-
1997
- 1997-05-30 KR KR1019980708627A patent/KR100298480B1/ko not_active IP Right Cessation
- 1997-05-30 WO PCT/SE1997/000954 patent/WO1997045873A1/en not_active Application Discontinuation
- 1997-05-30 CA CA002256763A patent/CA2256763A1/en not_active Abandoned
- 1997-05-30 EP EP97926345A patent/EP0902974A1/en not_active Withdrawn
- 1997-05-30 JP JP09542247A patent/JP2000511350A/ja not_active Abandoned
- 1997-05-30 AU AU31130/97A patent/AU3113097A/en not_active Abandoned
- 1997-05-30 CN CN97195081A patent/CN1220778A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20000010660A (ko) | 2000-02-25 |
| KR100298480B1 (ko) | 2001-08-07 |
| JP2000511350A (ja) | 2000-08-29 |
| AU3113097A (en) | 1998-01-05 |
| SE9602191D0 (sv) | 1996-05-31 |
| SE9602191L (sv) | 1997-12-01 |
| WO1997045873A1 (en) | 1997-12-04 |
| SE510443C2 (sv) | 1999-05-25 |
| EP0902974A1 (en) | 1999-03-24 |
| CN1220778A (zh) | 1999-06-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EEER | Examination request | ||
| FZDE | Dead |