CA2241676C - Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same - Google Patents

Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same Download PDF

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Publication number
CA2241676C
CA2241676C CA002241676A CA2241676A CA2241676C CA 2241676 C CA2241676 C CA 2241676C CA 002241676 A CA002241676 A CA 002241676A CA 2241676 A CA2241676 A CA 2241676A CA 2241676 C CA2241676 C CA 2241676C
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CA
Canada
Prior art keywords
layer
ferroelectric
perovskite
substrate
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CA002241676A
Other languages
English (en)
French (fr)
Other versions
CA2241676A1 (en
Inventor
Anil M. Dhote
Ramamoorthy Ramesh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Maryland Baltimore
Iconectiv LLC
Original Assignee
Telcordia Technologies Inc
University of Maryland Baltimore
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telcordia Technologies Inc, University of Maryland Baltimore filed Critical Telcordia Technologies Inc
Publication of CA2241676A1 publication Critical patent/CA2241676A1/en
Application granted granted Critical
Publication of CA2241676C publication Critical patent/CA2241676C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Physical Vapour Deposition (AREA)
CA002241676A 1996-01-03 1996-12-17 Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same Expired - Fee Related CA2241676C (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/582,545 1996-01-03
US08/582,545 US5777356A (en) 1996-01-03 1996-01-03 Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same
PCT/US1996/020164 WO1997025745A1 (en) 1996-01-03 1996-12-17 Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same

Publications (2)

Publication Number Publication Date
CA2241676A1 CA2241676A1 (en) 1997-07-17
CA2241676C true CA2241676C (en) 2002-04-02

Family

ID=24329555

Family Applications (1)

Application Number Title Priority Date Filing Date
CA002241676A Expired - Fee Related CA2241676C (en) 1996-01-03 1996-12-17 Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same

Country Status (10)

Country Link
US (1) US5777356A (https=)
EP (1) EP0956595A1 (https=)
JP (1) JP3285036B2 (https=)
KR (1) KR100329040B1 (https=)
CA (1) CA2241676C (https=)
ID (1) ID19530A (https=)
IL (1) IL119889A (https=)
MY (1) MY121282A (https=)
TW (1) TW336318B (https=)
WO (1) WO1997025745A1 (https=)

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JP3585674B2 (ja) * 1996-11-21 2004-11-04 ローム株式会社 半導体記憶装置
CN1259227A (zh) * 1997-06-09 2000-07-05 特尔科迪亚技术股份有限公司 晶体钙钛矿铁电单元的退火和呈现阻挡层特性改善的单元
US6115281A (en) 1997-06-09 2000-09-05 Telcordia Technologies, Inc. Methods and structures to cure the effects of hydrogen annealing on ferroelectric capacitors
US6303952B1 (en) * 1998-01-14 2001-10-16 Texas Instruments Incorporated Contact structure with an oxide silicidation barrier
AU6161599A (en) * 1998-09-24 2000-04-10 Telcordia Technologies, Inc. Ferroelectric thin films of reduced tetragonality
US6075264A (en) * 1999-01-25 2000-06-13 Samsung Electronics Co., Ltd. Structure of a ferroelectric memory cell and method of fabricating it
US6194754B1 (en) * 1999-03-05 2001-02-27 Telcordia Technologies, Inc. Amorphous barrier layer in a ferroelectric memory cell
US6688729B1 (en) 1999-06-04 2004-02-10 Canon Kabushiki Kaisha Liquid discharge head substrate, liquid discharge head, liquid discharge apparatus having these elements, manufacturing method of liquid discharge head, and driving method of the same
US6518609B1 (en) * 2000-08-31 2003-02-11 University Of Maryland Niobium or vanadium substituted strontium titanate barrier intermediate a silicon underlayer and a functional metal oxide film
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6858862B2 (en) 2001-06-29 2005-02-22 Intel Corporation Discrete polymer memory array and method of making same
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
US6960479B2 (en) * 2001-07-20 2005-11-01 Intel Corporation Stacked ferroelectric memory device and method of making same
KR100561839B1 (ko) * 2001-11-10 2006-03-16 삼성전자주식회사 강유전체 커패시터 및 그 제조방법
US6936301B2 (en) * 2002-05-06 2005-08-30 North Carolina State University Methods of controlling oxygen partial pressure during annealing of a perovskite dielectric layer
WO2004055876A1 (en) * 2002-12-17 2004-07-01 Ibule Photonics Inc. Method for preparation of ferroelectric single crystal film structure using deposition method
US7297602B2 (en) * 2003-09-09 2007-11-20 Sharp Laboratories Of America, Inc. Conductive metal oxide gate ferroelectric memory transistor
US7378286B2 (en) * 2004-08-20 2008-05-27 Sharp Laboratories Of America, Inc. Semiconductive metal oxide thin film ferroelectric memory transistor
US7696549B2 (en) * 2005-08-04 2010-04-13 University Of Maryland Bismuth ferrite films and devices grown on silicon
US20070029592A1 (en) * 2005-08-04 2007-02-08 Ramamoorthy Ramesh Oriented bismuth ferrite films grown on silicon and devices formed thereby
JP4996113B2 (ja) * 2006-03-08 2012-08-08 セイコーエプソン株式会社 強誘電体キャパシタ及び強誘電体メモリ
US20100001371A1 (en) * 2007-12-05 2010-01-07 Rohm Co., Ltd. Semiconductor device having capacitor including a high dielectric film and manufacture method of the same
US20100135061A1 (en) * 2008-12-02 2010-06-03 Shaoping Li Non-Volatile Memory Cell with Ferroelectric Layer Configurations
US8026111B2 (en) * 2009-02-24 2011-09-27 Oracle America, Inc. Dielectric enhancements to chip-to-chip capacitive proximity communication
FR2993705B1 (fr) * 2012-07-20 2015-05-29 Thales Sa Dispositif comportant une pluralite de couches minces
US10861992B2 (en) 2016-11-25 2020-12-08 The Boeing Company Perovskite solar cells for space
US20180151301A1 (en) * 2016-11-25 2018-05-31 The Boeing Company Epitaxial perovskite materials for optoelectronics
US10937783B2 (en) * 2016-11-29 2021-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
WO2020210257A1 (en) 2019-04-08 2020-10-15 Kepler Computing Inc. Doped polar layers and semiconductor device incorporating same
US11482528B2 (en) 2019-12-27 2022-10-25 Kepler Computing Inc. Pillar capacitor and method of fabricating such
US11289497B2 (en) 2019-12-27 2022-03-29 Kepler Computing Inc. Integration method of ferroelectric memory array
US11430861B2 (en) 2019-12-27 2022-08-30 Kepler Computing Inc. Ferroelectric capacitor and method of patterning such
US11792998B1 (en) 2021-06-11 2023-10-17 Kepler Computing Inc. Process integration flow for embedded memory with multi-pocket masks for decoupling processing of memory areas from non-memory areas
WO2023079631A1 (ja) * 2021-11-04 2023-05-11 三菱電機株式会社 半導体装置及びその製造方法
US12200943B2 (en) 2022-03-11 2025-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device structure and manufacturing method thereof

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US5051792A (en) * 1987-10-20 1991-09-24 Bell Communications Research, Inc. Epitaxial intermetallic contact for compound for compound semiconductors
US5075755A (en) * 1987-10-20 1991-12-24 Bell Communications Research, Inc. Epitaxial intermetallic contact for compound semiconductors
JP2847680B2 (ja) * 1990-03-26 1999-01-20 株式会社村田製作所 セラミック電子部品及びその製造方法
US5169485A (en) * 1991-03-07 1992-12-08 Bell Communications Research, Inc. Method for the preparation of epitaxial ferromagnetic manganese aluminum magnetic memory element
JPH0555514A (ja) * 1991-08-28 1993-03-05 Hitachi Ltd 半導体装置およびその製造方法
JPH05283756A (ja) * 1992-03-31 1993-10-29 Murata Mfg Co Ltd 強誘電体薄膜素子
US5187638A (en) * 1992-07-27 1993-02-16 Micron Technology, Inc. Barrier layers for ferroelectric and pzt dielectric on silicon
US5371699A (en) * 1992-11-17 1994-12-06 Ramtron International Corporation Non-volatile ferroelectric memory with folded bit lines and method of making the same
US5406445A (en) * 1993-03-25 1995-04-11 Matsushita Electric Industrial Co., Ltd. Thin film capacitor and method of manufacturing the same
US5479317A (en) * 1994-10-05 1995-12-26 Bell Communications Research, Inc. Ferroelectric capacitor heterostructure and method of making same
WO1997001854A1 (en) * 1995-06-28 1997-01-16 Bell Communication Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon

Also Published As

Publication number Publication date
IL119889A0 (en) 1997-03-18
ID19530A (id) 1998-07-16
CA2241676A1 (en) 1997-07-17
TW336318B (en) 1998-07-11
JPH11508412A (ja) 1999-07-21
EP0956595A4 (https=) 1999-11-17
MY121282A (en) 2006-01-28
KR100329040B1 (ko) 2002-06-20
WO1997025745A1 (en) 1997-07-17
IL119889A (en) 1999-12-31
KR19990076992A (ko) 1999-10-25
US5777356A (en) 1998-07-07
EP0956595A1 (en) 1999-11-17
JP3285036B2 (ja) 2002-05-27

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