ID19530A - Sel memori feroelektrik bebas platinum dengan lapisan penghalang interlogam dan metoda pembuatannya - Google Patents
Sel memori feroelektrik bebas platinum dengan lapisan penghalang interlogam dan metoda pembuatannyaInfo
- Publication number
- ID19530A ID19530A IDP970005A ID970005A ID19530A ID 19530 A ID19530 A ID 19530A ID P970005 A IDP970005 A ID P970005A ID 970005 A ID970005 A ID 970005A ID 19530 A ID19530 A ID 19530A
- Authority
- ID
- Indonesia
- Prior art keywords
- interlogam
- feroelectric
- platinum
- free
- memory cells
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/582,545 US5777356A (en) | 1996-01-03 | 1996-01-03 | Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same |
Publications (1)
Publication Number | Publication Date |
---|---|
ID19530A true ID19530A (id) | 1998-07-16 |
Family
ID=24329555
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IDP970005A ID19530A (id) | 1996-01-03 | 1997-01-02 | Sel memori feroelektrik bebas platinum dengan lapisan penghalang interlogam dan metoda pembuatannya |
Country Status (10)
Country | Link |
---|---|
US (1) | US5777356A (id) |
EP (1) | EP0956595A1 (id) |
JP (1) | JP3285036B2 (id) |
KR (1) | KR100329040B1 (id) |
CA (1) | CA2241676C (id) |
ID (1) | ID19530A (id) |
IL (1) | IL119889A (id) |
MY (1) | MY121282A (id) |
TW (1) | TW336318B (id) |
WO (1) | WO1997025745A1 (id) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3585674B2 (ja) * | 1996-11-21 | 2004-11-04 | ローム株式会社 | 半導体記憶装置 |
WO1998057380A1 (en) * | 1997-06-09 | 1998-12-17 | Bell Communications Research, Inc. | Annealing of a crystalline perovskite ferroelectric cell and cells exhibiting improved barrier properties |
US6115281A (en) | 1997-06-09 | 2000-09-05 | Telcordia Technologies, Inc. | Methods and structures to cure the effects of hydrogen annealing on ferroelectric capacitors |
US6303952B1 (en) * | 1998-01-14 | 2001-10-16 | Texas Instruments Incorporated | Contact structure with an oxide silicidation barrier |
CA2343129A1 (en) * | 1998-09-24 | 2000-03-30 | University Of Maryland | Ferroelectric thin films of reduced tetragonality |
US6075264A (en) | 1999-01-25 | 2000-06-13 | Samsung Electronics Co., Ltd. | Structure of a ferroelectric memory cell and method of fabricating it |
US6194754B1 (en) * | 1999-03-05 | 2001-02-27 | Telcordia Technologies, Inc. | Amorphous barrier layer in a ferroelectric memory cell |
US6688729B1 (en) | 1999-06-04 | 2004-02-10 | Canon Kabushiki Kaisha | Liquid discharge head substrate, liquid discharge head, liquid discharge apparatus having these elements, manufacturing method of liquid discharge head, and driving method of the same |
US6518609B1 (en) * | 2000-08-31 | 2003-02-11 | University Of Maryland | Niobium or vanadium substituted strontium titanate barrier intermediate a silicon underlayer and a functional metal oxide film |
US6858862B2 (en) | 2001-06-29 | 2005-02-22 | Intel Corporation | Discrete polymer memory array and method of making same |
US6756620B2 (en) * | 2001-06-29 | 2004-06-29 | Intel Corporation | Low-voltage and interface damage-free polymer memory device |
US6624457B2 (en) | 2001-07-20 | 2003-09-23 | Intel Corporation | Stepped structure for a multi-rank, stacked polymer memory device and method of making same |
US6960479B2 (en) * | 2001-07-20 | 2005-11-01 | Intel Corporation | Stacked ferroelectric memory device and method of making same |
KR100561839B1 (ko) * | 2001-11-10 | 2006-03-16 | 삼성전자주식회사 | 강유전체 커패시터 및 그 제조방법 |
US6936301B2 (en) * | 2002-05-06 | 2005-08-30 | North Carolina State University | Methods of controlling oxygen partial pressure during annealing of a perovskite dielectric layer |
JP4422678B2 (ja) * | 2002-12-17 | 2010-02-24 | イブル・フォトニクス・インコーポレイテッド | 蒸着法を用いた強誘電性単結晶膜構造物の製造方法 |
US7297602B2 (en) * | 2003-09-09 | 2007-11-20 | Sharp Laboratories Of America, Inc. | Conductive metal oxide gate ferroelectric memory transistor |
US7378286B2 (en) * | 2004-08-20 | 2008-05-27 | Sharp Laboratories Of America, Inc. | Semiconductive metal oxide thin film ferroelectric memory transistor |
US7696549B2 (en) * | 2005-08-04 | 2010-04-13 | University Of Maryland | Bismuth ferrite films and devices grown on silicon |
US20070029592A1 (en) * | 2005-08-04 | 2007-02-08 | Ramamoorthy Ramesh | Oriented bismuth ferrite films grown on silicon and devices formed thereby |
JP4996113B2 (ja) * | 2006-03-08 | 2012-08-08 | セイコーエプソン株式会社 | 強誘電体キャパシタ及び強誘電体メモリ |
US20100001371A1 (en) * | 2007-12-05 | 2010-01-07 | Rohm Co., Ltd. | Semiconductor device having capacitor including a high dielectric film and manufacture method of the same |
US20100135061A1 (en) * | 2008-12-02 | 2010-06-03 | Shaoping Li | Non-Volatile Memory Cell with Ferroelectric Layer Configurations |
US8026111B2 (en) * | 2009-02-24 | 2011-09-27 | Oracle America, Inc. | Dielectric enhancements to chip-to-chip capacitive proximity communication |
FR2993705B1 (fr) * | 2012-07-20 | 2015-05-29 | Thales Sa | Dispositif comportant une pluralite de couches minces |
US20180151301A1 (en) * | 2016-11-25 | 2018-05-31 | The Boeing Company | Epitaxial perovskite materials for optoelectronics |
US10861992B2 (en) | 2016-11-25 | 2020-12-08 | The Boeing Company | Perovskite solar cells for space |
US10937783B2 (en) | 2016-11-29 | 2021-03-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2020210263A1 (en) | 2019-04-08 | 2020-10-15 | Kepler Computing Inc. | Doped polar layers and semiconductor device incorporating same |
US11430861B2 (en) | 2019-12-27 | 2022-08-30 | Kepler Computing Inc. | Ferroelectric capacitor and method of patterning such |
US11482528B2 (en) | 2019-12-27 | 2022-10-25 | Kepler Computing Inc. | Pillar capacitor and method of fabricating such |
US11289497B2 (en) | 2019-12-27 | 2022-03-29 | Kepler Computing Inc. | Integration method of ferroelectric memory array |
US11785782B1 (en) | 2021-06-11 | 2023-10-10 | Kepler Computing Inc. | Embedded memory with encapsulation layer adjacent to a memory stack |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4017890A (en) * | 1975-10-24 | 1977-04-12 | International Business Machines Corporation | Intermetallic compound layer in thin films for improved electromigration resistance |
US5075755A (en) * | 1987-10-20 | 1991-12-24 | Bell Communications Research, Inc. | Epitaxial intermetallic contact for compound semiconductors |
US5051792A (en) * | 1987-10-20 | 1991-09-24 | Bell Communications Research, Inc. | Epitaxial intermetallic contact for compound for compound semiconductors |
JP2847680B2 (ja) * | 1990-03-26 | 1999-01-20 | 株式会社村田製作所 | セラミック電子部品及びその製造方法 |
US5169485A (en) * | 1991-03-07 | 1992-12-08 | Bell Communications Research, Inc. | Method for the preparation of epitaxial ferromagnetic manganese aluminum magnetic memory element |
JPH0555514A (ja) * | 1991-08-28 | 1993-03-05 | Hitachi Ltd | 半導体装置およびその製造方法 |
JPH05283756A (ja) * | 1992-03-31 | 1993-10-29 | Murata Mfg Co Ltd | 強誘電体薄膜素子 |
US5187638A (en) * | 1992-07-27 | 1993-02-16 | Micron Technology, Inc. | Barrier layers for ferroelectric and pzt dielectric on silicon |
US5371699A (en) * | 1992-11-17 | 1994-12-06 | Ramtron International Corporation | Non-volatile ferroelectric memory with folded bit lines and method of making the same |
EP0617439B1 (en) * | 1993-03-25 | 2003-01-08 | Matsushita Electric Industrial Co., Ltd. | Thin film capacitor and method of manufacturing the same |
US5479317A (en) * | 1994-10-05 | 1995-12-26 | Bell Communications Research, Inc. | Ferroelectric capacitor heterostructure and method of making same |
EP0972309A4 (en) * | 1995-06-28 | 2000-01-19 | Telcordia Tech Inc | BARRIER LAYER FOR INTEGRATED FERROELECTRIC CAPACITOR ON SILICON |
-
1996
- 1996-01-03 US US08/582,545 patent/US5777356A/en not_active Expired - Fee Related
- 1996-12-17 EP EP96944449A patent/EP0956595A1/en not_active Withdrawn
- 1996-12-17 CA CA002241676A patent/CA2241676C/en not_active Expired - Fee Related
- 1996-12-17 JP JP52522297A patent/JP3285036B2/ja not_active Expired - Fee Related
- 1996-12-17 KR KR1019980705122A patent/KR100329040B1/ko not_active IP Right Cessation
- 1996-12-17 WO PCT/US1996/020164 patent/WO1997025745A1/en not_active Application Discontinuation
- 1996-12-24 IL IL11988996A patent/IL119889A/xx not_active IP Right Cessation
-
1997
- 1997-01-02 ID IDP970005A patent/ID19530A/id unknown
- 1997-01-03 MY MYPI97000012A patent/MY121282A/en unknown
- 1997-01-08 TW TW086100136A patent/TW336318B/zh active
Also Published As
Publication number | Publication date |
---|---|
JPH11508412A (ja) | 1999-07-21 |
WO1997025745A1 (en) | 1997-07-17 |
JP3285036B2 (ja) | 2002-05-27 |
MY121282A (en) | 2006-01-28 |
CA2241676A1 (en) | 1997-07-17 |
KR19990076992A (ko) | 1999-10-25 |
TW336318B (en) | 1998-07-11 |
CA2241676C (en) | 2002-04-02 |
IL119889A (en) | 1999-12-31 |
EP0956595A4 (id) | 1999-11-17 |
IL119889A0 (en) | 1997-03-18 |
EP0956595A1 (en) | 1999-11-17 |
US5777356A (en) | 1998-07-07 |
KR100329040B1 (ko) | 2002-06-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
ID19530A (id) | Sel memori feroelektrik bebas platinum dengan lapisan penghalang interlogam dan metoda pembuatannya | |
ID27669A (id) | Film biodegradabel dan metode pembuatannya | |
DE69524645D1 (de) | Speicherzelle mit programmierbarer Antischmelzsicherungstechnologie | |
ATE440897T1 (de) | Vernetzte leitfähige polymerkomposit-materialen und verfahren zu deren herstellung | |
ID21361A (id) | Baterai dan metode pembuatannya | |
DE59611290D1 (de) | Elektrisch programmierbare Speicherzellenanordnung und Verfahren zu deren Herstellung | |
DE69734183T8 (de) | Sonnenzelle und Herstellungsverfahren | |
DE69904145D1 (de) | Isolationsanordnung mit flansch und dessen herstellungsmethode | |
DE69926762D1 (de) | Zusammengesetzte dichtung mit doppelelastizitätsmodul und verfahren zu deren herstellung | |
DE948802T1 (de) | Selbststehende abstandhalterstruktur und herstellung- und installationsverfahren denselben | |
ID25741A (id) | Metoda dan sistem mendeteksi terminal klone | |
DE69821551D1 (de) | Folientastatur und deren Herstellungsmethoden | |
DE3861895D1 (de) | Vorgefertigtes bauelement mit integrierter waermedaemmung, insbesondere deckenelement und verfahren zu dessen herstellung. | |
NO974372D0 (no) | Brönnstyringssystemer med nettverk nede i brönnen | |
ID29186A (id) | Artikel komposit dan metode pembuatannya | |
NL194183B (nl) | EPROM-cel met gleuf-isolatie, en werkwijze voor het vervaardigen hiervan. | |
ID16351A (id) | Papan tanda mesin penjual dan metode pembuatannya | |
IT1288135B1 (it) | Blocco per struttura edilizia composita e struttura edilizia composita realizzata con detto blocco. | |
DE29723591U1 (de) | Dichtungselement im Dachbereich | |
NO307977B1 (no) | Bygningselement med fagverkstruktur, samt fremgangsmÕte for fremstilling av dette | |
DE59813243D1 (de) | Speicherzellenanordnung und verfahren zu deren herstellung | |
DE69838023D1 (de) | Nichtflüchtige Speicherstruktur und das entsprechende Herstellungsverfahren | |
DE29521509U1 (de) | Bauelement mit fotoelektrischen Zellen und damit ausgestattete Dacheindeckung | |
DE59204011D1 (de) | Elektretstruktur, herstellungsverfahren dafür und deren verwendung in einem elektroakustischen wandler. | |
DE29721813U1 (de) | Dichtungselement im Dachbereich |