ID19530A - Sel memori feroelektrik bebas platinum dengan lapisan penghalang interlogam dan metoda pembuatannya - Google Patents
Sel memori feroelektrik bebas platinum dengan lapisan penghalang interlogam dan metoda pembuatannyaInfo
- Publication number
- ID19530A ID19530A IDP970005A ID970005A ID19530A ID 19530 A ID19530 A ID 19530A ID P970005 A IDP970005 A ID P970005A ID 970005 A ID970005 A ID 970005A ID 19530 A ID19530 A ID 19530A
- Authority
- ID
- Indonesia
- Prior art keywords
- interlogam
- feroelectric
- platinum
- free
- memory cells
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/582,545 US5777356A (en) | 1996-01-03 | 1996-01-03 | Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same |
Publications (1)
Publication Number | Publication Date |
---|---|
ID19530A true ID19530A (id) | 1998-07-16 |
Family
ID=24329555
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IDP970005A ID19530A (id) | 1996-01-03 | 1997-01-02 | Sel memori feroelektrik bebas platinum dengan lapisan penghalang interlogam dan metoda pembuatannya |
Country Status (10)
Country | Link |
---|---|
US (1) | US5777356A (id) |
EP (1) | EP0956595A1 (id) |
JP (1) | JP3285036B2 (id) |
KR (1) | KR100329040B1 (id) |
CA (1) | CA2241676C (id) |
ID (1) | ID19530A (id) |
IL (1) | IL119889A (id) |
MY (1) | MY121282A (id) |
TW (1) | TW336318B (id) |
WO (1) | WO1997025745A1 (id) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3585674B2 (ja) * | 1996-11-21 | 2004-11-04 | ローム株式会社 | 半導体記憶装置 |
KR20010013595A (ko) * | 1997-06-09 | 2001-02-26 | 엔, 마이클 그로브 | 개선된 장벽 특성을 나타내는 결정 퍼로브스카이트강유전체 셀을 어닐링하는 방법 |
US6115281A (en) | 1997-06-09 | 2000-09-05 | Telcordia Technologies, Inc. | Methods and structures to cure the effects of hydrogen annealing on ferroelectric capacitors |
US6303952B1 (en) * | 1998-01-14 | 2001-10-16 | Texas Instruments Incorporated | Contact structure with an oxide silicidation barrier |
JP2002525876A (ja) * | 1998-09-24 | 2002-08-13 | テルコーディア テクノロジーズ インコーポレイテッド | 正方晶度の低い強誘電体薄膜 |
US6075264A (en) | 1999-01-25 | 2000-06-13 | Samsung Electronics Co., Ltd. | Structure of a ferroelectric memory cell and method of fabricating it |
US6194754B1 (en) * | 1999-03-05 | 2001-02-27 | Telcordia Technologies, Inc. | Amorphous barrier layer in a ferroelectric memory cell |
US6688729B1 (en) * | 1999-06-04 | 2004-02-10 | Canon Kabushiki Kaisha | Liquid discharge head substrate, liquid discharge head, liquid discharge apparatus having these elements, manufacturing method of liquid discharge head, and driving method of the same |
US6518609B1 (en) | 2000-08-31 | 2003-02-11 | University Of Maryland | Niobium or vanadium substituted strontium titanate barrier intermediate a silicon underlayer and a functional metal oxide film |
US6858862B2 (en) | 2001-06-29 | 2005-02-22 | Intel Corporation | Discrete polymer memory array and method of making same |
US6756620B2 (en) * | 2001-06-29 | 2004-06-29 | Intel Corporation | Low-voltage and interface damage-free polymer memory device |
US6960479B2 (en) * | 2001-07-20 | 2005-11-01 | Intel Corporation | Stacked ferroelectric memory device and method of making same |
US6624457B2 (en) | 2001-07-20 | 2003-09-23 | Intel Corporation | Stepped structure for a multi-rank, stacked polymer memory device and method of making same |
KR100561839B1 (ko) * | 2001-11-10 | 2006-03-16 | 삼성전자주식회사 | 강유전체 커패시터 및 그 제조방법 |
US6936301B2 (en) * | 2002-05-06 | 2005-08-30 | North Carolina State University | Methods of controlling oxygen partial pressure during annealing of a perovskite dielectric layer |
AU2003302958A1 (en) * | 2002-12-17 | 2004-07-09 | Eun, Jaehwan | Method for preparation of ferroelectric single crystal film structure using deposition method |
US7297602B2 (en) * | 2003-09-09 | 2007-11-20 | Sharp Laboratories Of America, Inc. | Conductive metal oxide gate ferroelectric memory transistor |
US7378286B2 (en) * | 2004-08-20 | 2008-05-27 | Sharp Laboratories Of America, Inc. | Semiconductive metal oxide thin film ferroelectric memory transistor |
US7696549B2 (en) * | 2005-08-04 | 2010-04-13 | University Of Maryland | Bismuth ferrite films and devices grown on silicon |
US20070029592A1 (en) * | 2005-08-04 | 2007-02-08 | Ramamoorthy Ramesh | Oriented bismuth ferrite films grown on silicon and devices formed thereby |
JP4996113B2 (ja) * | 2006-03-08 | 2012-08-08 | セイコーエプソン株式会社 | 強誘電体キャパシタ及び強誘電体メモリ |
JP2009158956A (ja) * | 2007-12-05 | 2009-07-16 | Rohm Co Ltd | 半導体装置及び半導体装置の製造方法 |
US20100135061A1 (en) * | 2008-12-02 | 2010-06-03 | Shaoping Li | Non-Volatile Memory Cell with Ferroelectric Layer Configurations |
US8026111B2 (en) * | 2009-02-24 | 2011-09-27 | Oracle America, Inc. | Dielectric enhancements to chip-to-chip capacitive proximity communication |
FR2993705B1 (fr) * | 2012-07-20 | 2015-05-29 | Thales Sa | Dispositif comportant une pluralite de couches minces |
US10861992B2 (en) | 2016-11-25 | 2020-12-08 | The Boeing Company | Perovskite solar cells for space |
US20180151301A1 (en) * | 2016-11-25 | 2018-05-31 | The Boeing Company | Epitaxial perovskite materials for optoelectronics |
US10937783B2 (en) | 2016-11-29 | 2021-03-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US11398570B2 (en) | 2019-04-08 | 2022-07-26 | Kepler Computing Inc. | Doped polar layers and semiconductor device incorporating same |
US11482528B2 (en) | 2019-12-27 | 2022-10-25 | Kepler Computing Inc. | Pillar capacitor and method of fabricating such |
US11430861B2 (en) | 2019-12-27 | 2022-08-30 | Kepler Computing Inc. | Ferroelectric capacitor and method of patterning such |
US11289497B2 (en) | 2019-12-27 | 2022-03-29 | Kepler Computing Inc. | Integration method of ferroelectric memory array |
US11765909B1 (en) | 2021-06-11 | 2023-09-19 | Kepler Computing Inc. | Process integration flow for embedded memory enabled by decoupling processing of a memory area from a non-memory area |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4017890A (en) * | 1975-10-24 | 1977-04-12 | International Business Machines Corporation | Intermetallic compound layer in thin films for improved electromigration resistance |
US5051792A (en) * | 1987-10-20 | 1991-09-24 | Bell Communications Research, Inc. | Epitaxial intermetallic contact for compound for compound semiconductors |
US5075755A (en) * | 1987-10-20 | 1991-12-24 | Bell Communications Research, Inc. | Epitaxial intermetallic contact for compound semiconductors |
JP2847680B2 (ja) * | 1990-03-26 | 1999-01-20 | 株式会社村田製作所 | セラミック電子部品及びその製造方法 |
US5169485A (en) * | 1991-03-07 | 1992-12-08 | Bell Communications Research, Inc. | Method for the preparation of epitaxial ferromagnetic manganese aluminum magnetic memory element |
JPH0555514A (ja) * | 1991-08-28 | 1993-03-05 | Hitachi Ltd | 半導体装置およびその製造方法 |
JPH05283756A (ja) * | 1992-03-31 | 1993-10-29 | Murata Mfg Co Ltd | 強誘電体薄膜素子 |
US5187638A (en) * | 1992-07-27 | 1993-02-16 | Micron Technology, Inc. | Barrier layers for ferroelectric and pzt dielectric on silicon |
US5371699A (en) * | 1992-11-17 | 1994-12-06 | Ramtron International Corporation | Non-volatile ferroelectric memory with folded bit lines and method of making the same |
DE69431971T2 (de) * | 1993-03-25 | 2003-11-27 | Matsushita Electric Ind Co Ltd | Dünnschichtkondensator und Herstellungsverfahren |
US5479317A (en) * | 1994-10-05 | 1995-12-26 | Bell Communications Research, Inc. | Ferroelectric capacitor heterostructure and method of making same |
WO1997001854A1 (en) * | 1995-06-28 | 1997-01-16 | Bell Communication Research, Inc. | Barrier layer for ferroelectric capacitor integrated on silicon |
-
1996
- 1996-01-03 US US08/582,545 patent/US5777356A/en not_active Expired - Fee Related
- 1996-12-17 CA CA002241676A patent/CA2241676C/en not_active Expired - Fee Related
- 1996-12-17 WO PCT/US1996/020164 patent/WO1997025745A1/en not_active Application Discontinuation
- 1996-12-17 JP JP52522297A patent/JP3285036B2/ja not_active Expired - Fee Related
- 1996-12-17 KR KR1019980705122A patent/KR100329040B1/ko not_active IP Right Cessation
- 1996-12-17 EP EP96944449A patent/EP0956595A1/en not_active Withdrawn
- 1996-12-24 IL IL11988996A patent/IL119889A/xx not_active IP Right Cessation
-
1997
- 1997-01-02 ID IDP970005A patent/ID19530A/id unknown
- 1997-01-03 MY MYPI97000012A patent/MY121282A/en unknown
- 1997-01-08 TW TW086100136A patent/TW336318B/zh active
Also Published As
Publication number | Publication date |
---|---|
IL119889A (en) | 1999-12-31 |
EP0956595A4 (id) | 1999-11-17 |
IL119889A0 (en) | 1997-03-18 |
WO1997025745A1 (en) | 1997-07-17 |
US5777356A (en) | 1998-07-07 |
EP0956595A1 (en) | 1999-11-17 |
CA2241676A1 (en) | 1997-07-17 |
KR100329040B1 (ko) | 2002-06-20 |
CA2241676C (en) | 2002-04-02 |
KR19990076992A (ko) | 1999-10-25 |
JPH11508412A (ja) | 1999-07-21 |
JP3285036B2 (ja) | 2002-05-27 |
TW336318B (en) | 1998-07-11 |
MY121282A (en) | 2006-01-28 |
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