KR100329040B1 - 금속간장벽층을갖춘백금-비함유강유전메모리셀및그제조방법 - Google Patents

금속간장벽층을갖춘백금-비함유강유전메모리셀및그제조방법 Download PDF

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Publication number
KR100329040B1
KR100329040B1 KR1019980705122A KR19980705122A KR100329040B1 KR 100329040 B1 KR100329040 B1 KR 100329040B1 KR 1019980705122 A KR1019980705122 A KR 1019980705122A KR 19980705122 A KR19980705122 A KR 19980705122A KR 100329040 B1 KR100329040 B1 KR 100329040B1
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South Korea
Prior art keywords
layer
perovskite
ferroelectric
substrate
barrier layer
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KR1019980705122A
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English (en)
Korean (ko)
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KR19990076992A (ko
Inventor
아닐 엠. 도테
라마무르티 라메쉬
Original Assignee
엔, 마이클 그로브
텔코디아 테크놀로지스, 인코포레이티드
제임스 에이. 폴로스, 3세
유니버시티 오브 매릴랜드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/696—Electrodes comprising multiple layers, e.g. comprising a barrier layer and a metal layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

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  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Physical Vapour Deposition (AREA)
KR1019980705122A 1996-01-03 1996-12-17 금속간장벽층을갖춘백금-비함유강유전메모리셀및그제조방법 Expired - Fee Related KR100329040B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/582545 1996-01-03
US8/582545 1996-01-03
US08/582,545 US5777356A (en) 1996-01-03 1996-01-03 Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same
PCT/US1996/020164 WO1997025745A1 (en) 1996-01-03 1996-12-17 Platinum-free ferroelectric memory cell with intermetallic barrier layer and method of making same

Publications (2)

Publication Number Publication Date
KR19990076992A KR19990076992A (ko) 1999-10-25
KR100329040B1 true KR100329040B1 (ko) 2002-06-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980705122A Expired - Fee Related KR100329040B1 (ko) 1996-01-03 1996-12-17 금속간장벽층을갖춘백금-비함유강유전메모리셀및그제조방법

Country Status (10)

Country Link
US (1) US5777356A (https=)
EP (1) EP0956595A1 (https=)
JP (1) JP3285036B2 (https=)
KR (1) KR100329040B1 (https=)
CA (1) CA2241676C (https=)
ID (1) ID19530A (https=)
IL (1) IL119889A (https=)
MY (1) MY121282A (https=)
TW (1) TW336318B (https=)
WO (1) WO1997025745A1 (https=)

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CN1259227A (zh) * 1997-06-09 2000-07-05 特尔科迪亚技术股份有限公司 晶体钙钛矿铁电单元的退火和呈现阻挡层特性改善的单元
US6115281A (en) 1997-06-09 2000-09-05 Telcordia Technologies, Inc. Methods and structures to cure the effects of hydrogen annealing on ferroelectric capacitors
US6303952B1 (en) * 1998-01-14 2001-10-16 Texas Instruments Incorporated Contact structure with an oxide silicidation barrier
AU6161599A (en) * 1998-09-24 2000-04-10 Telcordia Technologies, Inc. Ferroelectric thin films of reduced tetragonality
US6075264A (en) * 1999-01-25 2000-06-13 Samsung Electronics Co., Ltd. Structure of a ferroelectric memory cell and method of fabricating it
US6194754B1 (en) * 1999-03-05 2001-02-27 Telcordia Technologies, Inc. Amorphous barrier layer in a ferroelectric memory cell
US6688729B1 (en) 1999-06-04 2004-02-10 Canon Kabushiki Kaisha Liquid discharge head substrate, liquid discharge head, liquid discharge apparatus having these elements, manufacturing method of liquid discharge head, and driving method of the same
US6518609B1 (en) * 2000-08-31 2003-02-11 University Of Maryland Niobium or vanadium substituted strontium titanate barrier intermediate a silicon underlayer and a functional metal oxide film
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6858862B2 (en) 2001-06-29 2005-02-22 Intel Corporation Discrete polymer memory array and method of making same
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
US6960479B2 (en) * 2001-07-20 2005-11-01 Intel Corporation Stacked ferroelectric memory device and method of making same
KR100561839B1 (ko) * 2001-11-10 2006-03-16 삼성전자주식회사 강유전체 커패시터 및 그 제조방법
US6936301B2 (en) * 2002-05-06 2005-08-30 North Carolina State University Methods of controlling oxygen partial pressure during annealing of a perovskite dielectric layer
WO2004055876A1 (en) * 2002-12-17 2004-07-01 Ibule Photonics Inc. Method for preparation of ferroelectric single crystal film structure using deposition method
US7297602B2 (en) * 2003-09-09 2007-11-20 Sharp Laboratories Of America, Inc. Conductive metal oxide gate ferroelectric memory transistor
US7378286B2 (en) * 2004-08-20 2008-05-27 Sharp Laboratories Of America, Inc. Semiconductive metal oxide thin film ferroelectric memory transistor
US7696549B2 (en) * 2005-08-04 2010-04-13 University Of Maryland Bismuth ferrite films and devices grown on silicon
US20070029592A1 (en) * 2005-08-04 2007-02-08 Ramamoorthy Ramesh Oriented bismuth ferrite films grown on silicon and devices formed thereby
JP4996113B2 (ja) * 2006-03-08 2012-08-08 セイコーエプソン株式会社 強誘電体キャパシタ及び強誘電体メモリ
US20100001371A1 (en) * 2007-12-05 2010-01-07 Rohm Co., Ltd. Semiconductor device having capacitor including a high dielectric film and manufacture method of the same
US20100135061A1 (en) * 2008-12-02 2010-06-03 Shaoping Li Non-Volatile Memory Cell with Ferroelectric Layer Configurations
US8026111B2 (en) * 2009-02-24 2011-09-27 Oracle America, Inc. Dielectric enhancements to chip-to-chip capacitive proximity communication
FR2993705B1 (fr) * 2012-07-20 2015-05-29 Thales Sa Dispositif comportant une pluralite de couches minces
US10861992B2 (en) 2016-11-25 2020-12-08 The Boeing Company Perovskite solar cells for space
US20180151301A1 (en) * 2016-11-25 2018-05-31 The Boeing Company Epitaxial perovskite materials for optoelectronics
US10937783B2 (en) * 2016-11-29 2021-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
WO2020210257A1 (en) 2019-04-08 2020-10-15 Kepler Computing Inc. Doped polar layers and semiconductor device incorporating same
US11482528B2 (en) 2019-12-27 2022-10-25 Kepler Computing Inc. Pillar capacitor and method of fabricating such
US11289497B2 (en) 2019-12-27 2022-03-29 Kepler Computing Inc. Integration method of ferroelectric memory array
US11430861B2 (en) 2019-12-27 2022-08-30 Kepler Computing Inc. Ferroelectric capacitor and method of patterning such
US11792998B1 (en) 2021-06-11 2023-10-17 Kepler Computing Inc. Process integration flow for embedded memory with multi-pocket masks for decoupling processing of memory areas from non-memory areas
WO2023079631A1 (ja) * 2021-11-04 2023-05-11 三菱電機株式会社 半導体装置及びその製造方法
US12200943B2 (en) 2022-03-11 2025-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Memory device structure and manufacturing method thereof

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US4017890A (en) * 1975-10-24 1977-04-12 International Business Machines Corporation Intermetallic compound layer in thin films for improved electromigration resistance
US5343353A (en) * 1991-08-28 1994-08-30 Hitachi, Ltd. Semiconductor device and process of producing the same
US5371699A (en) * 1992-11-17 1994-12-06 Ramtron International Corporation Non-volatile ferroelectric memory with folded bit lines and method of making the same

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US5075755A (en) * 1987-10-20 1991-12-24 Bell Communications Research, Inc. Epitaxial intermetallic contact for compound semiconductors
JP2847680B2 (ja) * 1990-03-26 1999-01-20 株式会社村田製作所 セラミック電子部品及びその製造方法
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US5187638A (en) * 1992-07-27 1993-02-16 Micron Technology, Inc. Barrier layers for ferroelectric and pzt dielectric on silicon
US5406445A (en) * 1993-03-25 1995-04-11 Matsushita Electric Industrial Co., Ltd. Thin film capacitor and method of manufacturing the same
US5479317A (en) * 1994-10-05 1995-12-26 Bell Communications Research, Inc. Ferroelectric capacitor heterostructure and method of making same
WO1997001854A1 (en) * 1995-06-28 1997-01-16 Bell Communication Research, Inc. Barrier layer for ferroelectric capacitor integrated on silicon

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US4017890A (en) * 1975-10-24 1977-04-12 International Business Machines Corporation Intermetallic compound layer in thin films for improved electromigration resistance
US5343353A (en) * 1991-08-28 1994-08-30 Hitachi, Ltd. Semiconductor device and process of producing the same
US5371699A (en) * 1992-11-17 1994-12-06 Ramtron International Corporation Non-volatile ferroelectric memory with folded bit lines and method of making the same

Also Published As

Publication number Publication date
IL119889A0 (en) 1997-03-18
ID19530A (id) 1998-07-16
CA2241676A1 (en) 1997-07-17
TW336318B (en) 1998-07-11
JPH11508412A (ja) 1999-07-21
EP0956595A4 (https=) 1999-11-17
MY121282A (en) 2006-01-28
WO1997025745A1 (en) 1997-07-17
IL119889A (en) 1999-12-31
KR19990076992A (ko) 1999-10-25
CA2241676C (en) 2002-04-02
US5777356A (en) 1998-07-07
EP0956595A1 (en) 1999-11-17
JP3285036B2 (ja) 2002-05-27

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