CA2185981A1 - Process for preparing trichlorosilane - Google Patents
Process for preparing trichlorosilaneInfo
- Publication number
- CA2185981A1 CA2185981A1 CA002185981A CA2185981A CA2185981A1 CA 2185981 A1 CA2185981 A1 CA 2185981A1 CA 002185981 A CA002185981 A CA 002185981A CA 2185981 A CA2185981 A CA 2185981A CA 2185981 A1 CA2185981 A1 CA 2185981A1
- Authority
- CA
- Canada
- Prior art keywords
- reactor
- gas
- trichlorosilane
- reaction
- silicon particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 239000005052 trichlorosilane Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 4
- 239000011856 silicon-based particle Substances 0.000 claims abstract description 22
- 239000007789 gas Substances 0.000 claims abstract description 18
- 239000012495 reaction gas Substances 0.000 claims abstract description 18
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000001257 hydrogen Substances 0.000 claims abstract description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 230000005855 radiation Effects 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 22
- 238000006243 chemical reaction Methods 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000003054 catalyst Substances 0.000 claims description 6
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000004064 recycling Methods 0.000 claims 1
- 239000000047 product Substances 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
- C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
- C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10778—Purification
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19534922A DE19534922C1 (de) | 1995-09-21 | 1995-09-21 | Verfahren zur Herstellung von Trichlorsilan und Silicium |
| DE19534922.9 | 1995-09-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2185981A1 true CA2185981A1 (en) | 1997-03-22 |
Family
ID=7772678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002185981A Abandoned CA2185981A1 (en) | 1995-09-21 | 1996-09-19 | Process for preparing trichlorosilane |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2890253B2 (ja) |
| KR (1) | KR970015462A (ja) |
| CA (1) | CA2185981A1 (ja) |
| DE (1) | DE19534922C1 (ja) |
| IT (1) | IT1284881B1 (ja) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6007869A (en) * | 1997-08-14 | 1999-12-28 | Wacker-Chemie Gmbh | Process for preparing highly pure silicon granules |
| US9321653B2 (en) | 2010-02-18 | 2016-04-26 | Tokuyama Corporation | Process for producing trichlorosilane |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100333351B1 (ko) * | 2000-04-26 | 2002-04-19 | 박종섭 | 데이터 레벨 안정화 회로 |
| US7265235B2 (en) | 2002-04-17 | 2007-09-04 | Wacker Chemie Ag | Method for producing halosilanes by impinging microwave energy |
| EP2086985B1 (en) * | 2006-12-01 | 2013-02-27 | Prochimie International, LLC | Process for preparation of alkoxysilanes |
| JP4620694B2 (ja) * | 2007-01-31 | 2011-01-26 | 株式会社大阪チタニウムテクノロジーズ | 高純度トリクロロシランの製造方法 |
| DE102007041803A1 (de) * | 2007-08-30 | 2009-03-05 | Pv Silicon Forschungs Und Produktions Gmbh | Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab |
| JP4714196B2 (ja) | 2007-09-05 | 2011-06-29 | 信越化学工業株式会社 | トリクロロシランの製造方法および多結晶シリコンの製造方法 |
| KR101117290B1 (ko) * | 2009-04-20 | 2012-03-20 | 에이디알엠테크놀로지 주식회사 | 삼염화실란가스 제조용 반응장치 |
| JP6288626B2 (ja) * | 2014-08-28 | 2018-03-07 | 東亞合成株式会社 | トリクロロシランの製造方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1935895B2 (de) * | 1969-07-15 | 1971-06-03 | Deutsche Gold und Silber Scheide anstalt vormals Roessler, 6000 Frankfurt | Verfahren zur herstellung von silikochloroform |
| US4526769A (en) * | 1983-07-18 | 1985-07-02 | Motorola, Inc. | Trichlorosilane production process |
-
1995
- 1995-09-21 DE DE19534922A patent/DE19534922C1/de not_active Expired - Fee Related
-
1996
- 1996-08-27 IT IT96RM000596A patent/IT1284881B1/it active IP Right Grant
- 1996-09-13 KR KR1019960039747A patent/KR970015462A/ko not_active Application Discontinuation
- 1996-09-18 JP JP8246444A patent/JP2890253B2/ja not_active Expired - Lifetime
- 1996-09-19 CA CA002185981A patent/CA2185981A1/en not_active Abandoned
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6007869A (en) * | 1997-08-14 | 1999-12-28 | Wacker-Chemie Gmbh | Process for preparing highly pure silicon granules |
| US9321653B2 (en) | 2010-02-18 | 2016-04-26 | Tokuyama Corporation | Process for producing trichlorosilane |
Also Published As
| Publication number | Publication date |
|---|---|
| ITRM960596A0 (ja) | 1996-08-27 |
| DE19534922C1 (de) | 1997-02-20 |
| JP2890253B2 (ja) | 1999-05-10 |
| KR970015462A (ko) | 1997-04-28 |
| IT1284881B1 (it) | 1998-05-22 |
| ITRM960596A1 (it) | 1998-02-27 |
| JPH09118512A (ja) | 1997-05-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |
Effective date: 20000919 |
|
| FZDE | Discontinued |
Effective date: 20000919 |